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Le Transistor Bipolaire A Heterojonction Si Sige Sous Contraintes Electromagnetiques Des Degradations Electriques A Lanalyse Structurale
Download Le Transistor Bipolaire A Heterojonction Si Sige Sous Contraintes Electromagnetiques Des Degradations Electriques A Lanalyse Structurale full books in PDF, epub, and Kindle. Read online Le Transistor Bipolaire A Heterojonction Si Sige Sous Contraintes Electromagnetiques Des Degradations Electriques A Lanalyse Structurale ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis Embedded Mechatronic Systems by : Abdelkhalak El Hami
Download or read book Embedded Mechatronic Systems written by Abdelkhalak El Hami and published by Elsevier. This book was released on 2019-11-26 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt: Mechatronics brings together computer science, mechanics and electronics. It enables us to improve the performances of embedded electronic systems by reducing their weight, volume, energy consumption and cost. Mechatronic equipment must operate without failure throughout ever-increasing service lives.The particularly severe conditions of use of embedded mechatronics cause failure mechanisms which are the source of breakdowns. Until now, these failure phenomena have not been looked at with enough depth to be able to be controlled. - Provides a statistical approach to design optimization through reliability - Presents an experimental approach for the characterization of the development of mechatronic systems in operating mode - Analyzes new tools that effect thermal, vibratory, humidity, electric and electromagnetic stresses
Book Synopsis Embedded Mechatronic Systems by : Abdelkhalak El Hami
Download or read book Embedded Mechatronic Systems written by Abdelkhalak El Hami and published by ISTE Press - Elsevier. This book was released on 2019-11-15 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt: Mechatronics brings together computer science, mechanics and electronics. It enables us to improve the performances of embedded electronic systems by reducing their weight, volume, energy consumption and cost. Mechatronic equipment must operate without failure throughout ever-increasing service lives.The particularly severe conditions of use of embedded mechatronics cause failure mechanisms which are the source of breakdowns. Until now, these failure phenomena have not been looked at with enough depth to be able to be controlled.
Book Synopsis Compound Semiconductor Transistors by : Sandip Tiwari
Download or read book Compound Semiconductor Transistors written by Sandip Tiwari and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1993 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis SiGe Heterojunction Bipolar Transistors by : Peter Ashburn
Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
Book Synopsis Fiabilité des Transistors Bipolaires à Hétérojonction sur substrat InP by : JEAN-CHRISTOPHE MARTIN
Download or read book Fiabilité des Transistors Bipolaires à Hétérojonction sur substrat InP written by JEAN-CHRISTOPHE MARTIN and published by . This book was released on 2010-07 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications by : Niccolò Rinaldi
Download or read book Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications written by Niccolò Rinaldi and published by CRC Press. This book was released on 2022-09-01 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becomingan ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000’s.Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration.Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Book Synopsis Design and Realization of Bipolar Transistors by : Peter Ashburn
Download or read book Design and Realization of Bipolar Transistors written by Peter Ashburn and published by . This book was released on 1988-08-18 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses new developments in the design and fabrication of bipolar transistors for high-speed digital circuits. Covers advances in silicon technology (such as polysilicon emitters and self-aligned fabrication techniques), gallium arsenide technology (such as extremely high-performance MSI circuits resulting from the development of GaAs/GaAlAs heterojunctions), and new applications of bipolar transistors (such as optoelectronic circuits). Also deals with optimization of bipolar devices and processes for high-speed, digital circuits by means of a quasi-analytical expression for the gate delay of an ECL logic gate. Includes case studies.
Author :National Aeronautics and Space Administration (NASA) Publisher :Createspace Independent Publishing Platform ISBN 13 :9781721575299 Total Pages :24 pages Book Rating :4.5/5 (752 download)
Book Synopsis Long-Term Reliability of High Speed Sige/Si Heterojunction Bipolar Transistors by : National Aeronautics and Space Administration (NASA)
Download or read book Long-Term Reliability of High Speed Sige/Si Heterojunction Bipolar Transistors written by National Aeronautics and Space Administration (NASA) and published by Createspace Independent Publishing Platform. This book was released on 2018-06-20 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt: Accelerated lifetime tests were performed on double-mesa structure Si/Si0.7Ge0.3/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175C-275C. Both single- and multiple finger transistors were tested. The single-finger transistors (with 5x20 micron sq m emitter area) have DC current gains approximately 40-50 and f(sub T) and f(sub MAX) of up to 22 GHz and 25 GHz, respectively. The multiple finger transistors (1.4 micron finger width, 9 emitter fingers with total emitter area of 403 micron sq m) have similar DC current gain but f(sub T) of 50 GHz. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REID has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of the devices at room temperature is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation. SiGe/Si based amplifier circuits were also subjected to lifetime testing and we extrapolate MTTF is approximately 1.1_10(exp 6) hours at 125iC junction temperature from the circuit lifetime data. Ponchak
