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Author : J. M. Poate
Publisher :
ISBN 13 :
Total Pages : 584 pages
Book Rating : 4.3/5 (91 download)
Download or read book Laser Annealing of Semiconductors written by J. M. Poate and published by . This book was released on 1982 with total page 584 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : J Poate
Publisher : Elsevier
ISBN 13 : 0323145426
Total Pages : 577 pages
Book Rating : 4.3/5 (231 download)
Download or read book Laser Annealing of Semiconductors written by J Poate and published by Elsevier. This book was released on 2012-12-02 with total page 577 pages. Available in PDF, EPUB and Kindle. Book excerpt: Laser Annealing of Semiconductors deals with the materials science of surfaces that have been subjected to ultrafast heating by intense laser or electron beams. This book is organized into 13 chapters that specifically tackle transient annealing of compound semiconductors. After briefly dealing with an overview of laser annealing, this book goes on discussing the concepts of solidification and crystallization pertinent to the field. These topics are followed by discussions on the main mechanisms of interaction of photon and electron beams with condensed matter; the calculation of thermophysical properties of crystalline materials; and high-speed crystal growth by laser annealing of ion-implanted silicon. The subsequent chapters describe the microstructural and topographical properties of annealed semiconductor layers and the epitaxy of ion-implanted silicon irradiated with a laser or electron beam single pulse. This text also explores the electronic and surface properties and the continuous-wave beam processing of semiconductors. The concluding chapters cover various reactions in metal-semiconductor systems, such as fast and laser-induced melting, solidification, mixing, and quenching. Laser-induced interactions in metal-semiconductor systems and the factors involved in control of the heat treatment process are also discussed in these chapters. Materials scientists and researchers and device engineers will find this book invaluable.
Author : Fuccio Cristiano
Publisher : Woodhead Publishing
ISBN 13 : 0128202564
Total Pages : 428 pages
Book Rating : 4.1/5 (282 download)
Download or read book Laser Annealing Processes in Semiconductor Technology written by Fuccio Cristiano and published by Woodhead Publishing. This book was released on 2021-04-21 with total page 428 pages. Available in PDF, EPUB and Kindle. Book excerpt: Laser Annealing Processes in Semiconductor Technology: Theory, Modeling and Applications in Nanoelectronics synthesizes the scientific and technological advances of laser annealing processes for current and emerging nanotechnologies. The book provides an overview of the laser-matter interactions of materials and recent advances in modeling of laser-related phenomena, with the bulk of the book focusing on current and emerging (beyond-CMOS) applications. Reviewed applications include laser annealing of CMOS, group IV semiconductors, superconducting materials, photonic materials, 2D materials. This comprehensive book is ideal for post-graduate students, new entrants, and experienced researchers in academia, research and development in materials science, physics and engineering. - Introduces the fundamentals of laser materials and device fabrication methods, including laser-matter interactions and laser-related phenomena - Addresses advances in physical modeling and in predictive simulations of laser annealing processes such as atomistic modeling and TCAD simulations - Reviews current and emerging applications of laser annealing processes such as CMOS technology and group IV semiconductors
Author :
Publisher : Academic Press
ISBN 13 : 0080864430
Total Pages : 335 pages
Book Rating : 4.0/5 (88 download)
Download or read book Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization written by and published by Academic Press. This book was released on 1997-06-12 with total page 335 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical, physical, and optical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Author : Fred Chernow
Publisher : Springer Science & Business Media
ISBN 13 : 1461341965
Total Pages : 733 pages
Book Rating : 4.4/5 (613 download)
Download or read book Ion Implantation in Semiconductors 1976 written by Fred Chernow and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 733 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Fifth International Conference on Ion Implantation took place in Boulder, Colorado between the 9th and 13th of August 1976. Papers were delivered by scientists and engineers from 15 countries, and the attendees represented 19 countries. As has become the custom at these conferences, the sessions were intense with the coffee breaks and evenings given to informal meetings among the participants. It was a time to renew old friendships, begin new ones, exchange ideas, personally question authors of papers that appeared in the literature since the last conference and find out what was generally happening in Ion Implantation. In recent years it has beome more difficult to get funding to travel to such meetings. To assist the participating authors financial aid was solicited from industry and the Office of Naval Research. We are most grateful for their positive response to our requests. The success of the conference was in part due to their generous contributions. The Program Committee had the unhappy task of the reviewing of more than 170 abstracts. The result of their labors was well worth their effort. Much thanks goes to them for molding the conference into an accurate representation of activities in the field. Behind the scenes in Boulder, local arrangements were handled ably by Graeme Eldridge. The difficulty of this task cannot be overemphasized. Our thanks to him for a job well done.
Author :
Publisher : Academic Press
ISBN 13 : 0080864422
Total Pages : 321 pages
Book Rating : 4.0/5 (88 download)
Download or read book Effect of Disorder and Defects in Ion-Implanted Semiconductors: Electrical and Physiochemical Characterization written by and published by Academic Press. This book was released on 1997-05-23 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing. Electrical and Physicochemical Characterization focuses on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical and physico-chemical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Author : J. S. Williams
Publisher : Academic Press
ISBN 13 : 1483220648
Total Pages : 432 pages
Book Rating : 4.4/5 (832 download)
Download or read book Ion Implantation and Beam Processing written by J. S. Williams and published by Academic Press. This book was released on 2014-06-28 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable.
Author :
Publisher :
ISBN 13 :
Total Pages : 1346 pages
Book Rating : 4.:/5 (31 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1985 with total page 1346 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Peter A. Barnes
Publisher :
ISBN 13 :
Total Pages : 552 pages
Book Rating : 4.:/5 (318 download)
Download or read book Semiconductor Characterization Techniques written by Peter A. Barnes and published by . This book was released on 1978 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Mark Mentzer
Publisher : CRC Press
ISBN 13 : 9780824782023
Total Pages : 336 pages
Book Rating : 4.7/5 (82 download)
Download or read book Principles of Optical Circuit Engineering written by Mark Mentzer and published by CRC Press. This book was released on 1990-07-18 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: Examines the devices, physical phenomena, and component technologies that facilitate diverse optical systems functions. Considers production and commercial aspects of microelectronic communication, computing, signal processing, and sensing systems. Presents design guidelines for optical circuits. Di
Author :
Publisher :
ISBN 13 :
Total Pages : 760 pages
Book Rating : 4.:/5 (3 download)
Download or read book Energy Research Abstracts written by and published by . This book was released on 1986 with total page 760 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Peter Wellmann
Publisher : John Wiley & Sons
ISBN 13 : 3527346716
Total Pages : 743 pages
Book Rating : 4.5/5 (273 download)
Download or read book Wide Bandgap Semiconductors for Power Electronics written by Peter Wellmann and published by John Wiley & Sons. This book was released on 2022-01-10 with total page 743 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developments Links the high potential of wide bandgap semiconductors with the technological implementation capabilities Offers a unique combination of academic and industrial perspectives Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.
Author : Carl Wilmsen
Publisher : Springer Science & Business Media
ISBN 13 : 1468448358
Total Pages : 472 pages
Book Rating : 4.4/5 (684 download)
Download or read book Physics and Chemistry of III-V Compound Semiconductor Interfaces written by Carl Wilmsen and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
Author :
Publisher : Academic Press
ISBN 13 : 0080860206
Total Pages : 671 pages
Book Rating : 4.0/5 (88 download)
Download or read book Laser Ablation and Desorption written by and published by Academic Press. This book was released on 1997-12-10 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume introduces the subject of laser ablation and desorption to scientists and engineers. It covers fundamental experimental and theoretical tools, models, and techniques, and introduces the most important applications. Clearly written and organized in a straightforward manner, Laser Ablation and Desorption lead the reader straight through the fundamentals of laser-surface interactions. Each chapter is self-contained and includes references to other chapters as necessary, so that readers may begin with the topic of greatest interest and follow the references to other aspects of the subject contained within the book.Key Features* Provides up-to-date information about one of the most active fields in physics today* Written and edited by major figures in the field of laser ablation and desorption* Represents the most comprehensive treatment of the state-of-the-art available
Author :
Publisher :
ISBN 13 :
Total Pages : 834 pages
Book Rating : 4.:/5 (334 download)
Download or read book Research in Progress written by and published by . This book was released on 1978 with total page 834 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Norbert H. Nickel
Publisher : Academic Press
ISBN 13 : 0080540945
Total Pages : 215 pages
Book Rating : 4.0/5 (85 download)
Download or read book Laser Crystallization of Silicon - Fundamentals to Devices written by Norbert H. Nickel and published by Academic Press. This book was released on 2003-12-12 with total page 215 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book on the Laser Crystallization of Silicon reviews the latest experimental and theoretical studies in the field. It has been written by recognised global authorities and covers the most recent phenomena related to the laser crystallization process and the properties of the resulting polycrystalline silicon. Reflecting the truly interdisciplinary nature of the field that the series covers, this volume will continue to be of great interest to physicists, chemists, materials scientists and device engineers in modern industry. - Valuable applications for industry, particularly in the fabrication of thin-film electronics - Each chapter has been peer reviewed - An important and timely contribution to the semiconductor literature
Author : Young Suh Song
Publisher : Springer Nature
ISBN 13 : 9819966493
Total Pages : 930 pages
Book Rating : 4.8/5 (199 download)
Download or read book Handbook of Emerging Materials for Semiconductor Industry written by Young Suh Song and published by Springer Nature. This book was released on with total page 930 pages. Available in PDF, EPUB and Kindle. Book excerpt:
