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Author : Richard Albert Gassman
Publisher :
ISBN 13 :
Total Pages : 150 pages
Book Rating : 4.:/5 (12 download)
Download or read book Isothermal Annealing Study of Neutron Transmutation Doped Silicon:gallium written by Richard Albert Gassman and published by . This book was released on 1983 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Thomas William Gregg
Publisher :
ISBN 13 :
Total Pages : 112 pages
Book Rating : 4.:/5 (142 download)
Download or read book An Infrared Annealing Study of Neutron Transmutation Doped Silicon: Gallium written by Thomas William Gregg and published by . This book was released on 1985 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jeffrey B. Watson
Publisher :
ISBN 13 :
Total Pages : 136 pages
Book Rating : 4.:/5 (957 download)
Download or read book An Annealing Study of Neutron Transmutation Doped Silicon: Boron written by Jeffrey B. Watson and published by . This book was released on 1982 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Wade H. Shafer
Publisher : Springer
ISBN 13 :
Total Pages : 328 pages
Book Rating : 4.F/5 ( download)
Download or read book Masters Theses in the Pure and Applied Sciences written by Wade H. Shafer and published by Springer. This book was released on 1985-03 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1 957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volumes were handled by an interna tional publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 28 (thesis year 1 983) a total of 10,661 theses titles from 26 Canadian and 197 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this important annual reference work. While Volume 28 reports theses submitted in-1983, on occasion, certain univer sities do report theses submitted in previous years but not reported at the time.
Author :
Publisher :
ISBN 13 :
Total Pages : 58 pages
Book Rating : 4.:/5 (227 download)
Download or read book A Study of Defects in Neutron Transmutation Doped Silicon: Gallium by Hall Effect Analysis written by and published by . This book was released on 1984 with total page 58 pages. Available in PDF, EPUB and Kindle. Book excerpt: Temperature-dependent Hall effect analysis has been used to study neutron transmutation doped, p-type silicon conventionally doped with gallium. Moderate temperature anneals of the irradiated material produced three shallow acceptor levels. The first, at 0.57 ev., was detected after prolonged anneals at 525 C and has been identified as the Ga-X level, a substitutional gallium-substitutional carbon complex. The other two levels appeared after anneals at 600 C.
Author : Tianming Philip Roan
Publisher :
ISBN 13 :
Total Pages : 106 pages
Book Rating : 4.:/5 (211 download)
Download or read book An Infrared Annealing Study of Float Zone Neutron Transmutation Doped Silicon written by Tianming Philip Roan and published by . This book was released on 1988 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 984 pages
Book Rating : 4.:/5 (31 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1985 with total page 984 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Ewan Macelwee Lawson
Publisher :
ISBN 13 : 9780642598691
Total Pages : 8 pages
Book Rating : 4.5/5 (986 download)
Download or read book Rapid Thermal Annealing of Neutron Transmutation Doped Silicon written by Ewan Macelwee Lawson and published by . This book was released on 1987 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 922 pages
Book Rating : 4.3/5 (91 download)
Download or read book Physics Briefs written by and published by . This book was released on 1985 with total page 922 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Sorab K. Ghandhi
Publisher : John Wiley & Sons
ISBN 13 : 0471580058
Total Pages : 870 pages
Book Rating : 4.4/5 (715 download)
Download or read book VLSI Fabrication Principles written by Sorab K. Ghandhi and published by John Wiley & Sons. This book was released on 1994-03-31 with total page 870 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fully updated with the latest technologies, this edition covers thefundamental principles underlying fabrication processes forsemiconductor devices along with integrated circuits made fromsilicon and gallium arsenide. Stresses fabrication criteria forsuch circuits as CMOS, bipolar, MOS, FET, etc. These diversetechnologies are introduced separately and then consolidated intocomplete circuits. An Instructor's Manual presenting detailed solutions to all theproblems in the book is available from the Wiley editorialdepartment.
Author : B. W. Williams
Publisher : Palgrave
ISBN 13 : 9780333396629
Total Pages : 337 pages
Book Rating : 4.3/5 (966 download)
Download or read book Power Electronics written by B. W. Williams and published by Palgrave. This book was released on 1987 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 1668 pages
Book Rating : 4.3/5 (91 download)
Download or read book Chemical Abstracts written by and published by . This book was released on 1994-03-07 with total page 1668 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : J. R. Bird
Publisher : Academic Press
ISBN 13 :
Total Pages : 748 pages
Book Rating : 4.:/5 (45 download)
Download or read book Ion Beams for Materials Analysis written by J. R. Bird and published by Academic Press. This book was released on 1989 with total page 748 pages. Available in PDF, EPUB and Kindle. Book excerpt: The use of ion beams for materials analysis involves many different ion-atom interaction processes which previously have largely been considered in separate reviews and texts. A list of books and conference proceedings is given in Table 2. This book is divided into three parts, the first which treats all ion beam techniques and their applications in such diverse fields as materials science, thin film and semiconductor technology, surface science, geology, biology, medicine, environmental science, archaeology and so on.
Author : Magnus Willander
Publisher : Springer
ISBN 13 : 9781461285083
Total Pages : 0 pages
Book Rating : 4.2/5 (85 download)
Download or read book High Temperature Electronics written by Magnus Willander and published by Springer. This book was released on 2011-09-17 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: There is a growing demand for electronic signal processing at elevated temperatures. A number of approaches have been used to develop this capability. Silicon circuits could be developed and fabricated with an appropriate technology to cover increased temperature ranges. In a search for semiconductors with a wider energy gap to avoid leakage currents at high operating temperatures, one developed compound semiconductors such as GaAIAs on GaAs substrates. Efforts to use GaN are also useful, although difficult due to the lack of a suitable substrate material for lattice-matched epitaxial growth. Other work concerns electronic compo nent and circuit developments with SiC. Preliminary results have proved interesting. This book attempts to present the possibilities of such circuitry. Some of the solutions obtained so far are directly usable for the many applications where high environmental temperatures exist. Other concepts, particularly the more demanding ones, such as operation above 500 °C, still need much more researching. This also concerns estimates of device lifetimes for con tinuous high temperature operation. This book may help the potential user of such circuitry to find a suitable solution. It should also stimulate more research groups to enter this demanding effort. And finally, it should stimulate a broad awareness of the need and the solutions for this type of electronics. That is why Part One is devoted to high temperature applications.
Author :
Publisher : Elsevier
ISBN 13 : 0080541003
Total Pages : 514 pages
Book Rating : 4.0/5 (85 download)
Download or read book Silicon Epitaxy written by and published by Elsevier. This book was released on 2001-09-26 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
Author : Oriol Rius-Ayra
Publisher : MDPI
ISBN 13 : 3036510109
Total Pages : 90 pages
Book Rating : 4.0/5 (365 download)
Download or read book Surface Modification of Metals and Alloys written by Oriol Rius-Ayra and published by MDPI. This book was released on 2021-08-31 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the past four decades, there has been increased attention given to the research of fluid mechanics due to its wide application in industry and phycology. Major advances in the modeling of key topics such Newtonian and non-Newtonian fluids and thin film flows have been made and finally published in the Special Issue of coatings. This is an attempt to edit the Special Issue into a book. Although this book is not a formal textbook, it will definitely be useful for university teachers, research students, industrial researchers and in overcoming the difficulties occurring in the said topic, while dealing with the nonlinear governing equations. For such types of equations, it is often more difficult to find an analytical solution or even a numerical one. This book has successfully handled this challenging job with the latest techniques. In addition, the findings of the simulation are logically realistic and meet the standard of sufficient scientific value.
Author : Charles P. Marsden
Publisher :
ISBN 13 :
Total Pages : 472 pages
Book Rating : 4.3/5 (91 download)
Download or read book Silicon Device Processing written by Charles P. Marsden and published by . This book was released on 1970 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of the Symposium was to provide an opportunity for engineers and applied scientists actively engaged in the silicon device technology field to discuss the most advanced measurement methods for process control and materials characterization.The basic theme of the meeting was to stress the interdependence of measurements techniques, facilities, and materials as they relate to the overall problems of improving and advancing silicon device sciences and technologies.(Author).
