Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Download International Electron Devices Meeting 1998 full books in PDF, epub, and Kindle. Read online International Electron Devices Meeting 1998 ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Download or read book International Electron Devices Meeting, 1998 written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 : 9780780347762
Total Pages : 1046 pages
Book Rating : 4.3/5 (477 download)
Download or read book International Electron Devices Meeting, 1998, San Francisco, December 6-9, 1998 written by and published by . This book was released on 1998 with total page 1046 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 : 9780780347762
Total Pages : pages
Book Rating : 4.3/5 (477 download)
Download or read book International Electron Devices Meeting 1998 written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : IEEE Electron Devices Society
Publisher : Institute of Electrical & Electronics Engineers(IEEE)
ISBN 13 : 9780780347779
Total Pages : 980 pages
Book Rating : 4.3/5 (477 download)
Download or read book Electron Devices Meeting (IEDM), 1998 International written by IEEE Electron Devices Society and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1999 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tended by the world's foremost experts in electron devices, this conference considers all the various types of electron devices available, including electron tubes, solid-state devices, & power devices. Also detailed are displays, sensors, processing, high voltage devices, & quantum & vacuum electronics. Partial Contents: CMOS Devices & Reliability; Detectors, Sensors & Displays; Integrated Circuits; Modeling & Simulation; Quantum Electronics & Compound Semiconductor Devices; Solid State Devices
Author : IEEE Electron Devices Society
Publisher : Institute of Electrical & Electronics Engineers(IEEE)
ISBN 13 : 9780780347748
Total Pages : 980 pages
Book Rating : 4.3/5 (477 download)
Download or read book 1998 International Electron Devices Meeting written by IEEE Electron Devices Society and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1999 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt: Attended by the world's foremost experts in electron devices, this conference considers all the various types of electron devices available, including electron tubes, solid-state devices, & power devices. Also detailed are displays, sensors, processing, high voltage devices, & quantum & vacuum electronics. Partial Contents: CMOS Devices & Reliability; Detectors, Sensors & Displays; Integrated Circuits; Modeling & Simulation; Quantum Electronics & Compound Semiconductor Devices; Solid State Devices
Author : Wai-Kai Chen
Publisher : CRC Press
ISBN 13 : 0203011503
Total Pages : 400 pages
Book Rating : 4.2/5 (3 download)
Download or read book VLSI Technology written by Wai-Kai Chen and published by CRC Press. This book was released on 2003-03-19 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: As their name implies, VLSI systems involve the integration of various component systems. While all of these components systems are rooted in semiconductor manufacturing, they involve a broad range of technologies. This volume of the Principles and Applications of Engineering series examines the technologies associated with VLSI systems, including
Author : Wai-Kai Chen
Publisher : CRC Press
ISBN 13 : 9781420049671
Total Pages : 1788 pages
Book Rating : 4.0/5 (496 download)
Download or read book The VLSI Handbook written by Wai-Kai Chen and published by CRC Press. This book was released on 2019-07-17 with total page 1788 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the years, the fundamentals of VLSI technology have evolved to include a wide range of topics and a broad range of practices. To encompass such a vast amount of knowledge, The VLSI Handbook focuses on the key concepts, models, and equations that enable the electrical engineer to analyze, design, and predict the behavior of very large-scale integrated circuits. It provides the most up-to-date information on IC technology you can find. Using frequent examples, the Handbook stresses the fundamental theory behind professional applications. Focusing not only on the traditional design methods, it contains all relevant sources of information and tools to assist you in performing your job. This includes software, databases, standards, seminars, conferences and more. The VLSI Handbook answers all your needs in one comprehensive volume at a level that will enlighten and refresh the knowledge of experienced engineers and educate the novice. This one-source reference keeps you current on new techniques and procedures and serves as a review for standard practice. It will be your first choice when looking for a solution.
Author : Arokia Nathan
Publisher : John Wiley & Sons
ISBN 13 : 1394202466
Total Pages : 469 pages
Book Rating : 4.3/5 (942 download)
Download or read book 75th Anniversary of the Transistor written by Arokia Nathan and published by John Wiley & Sons. This book was released on 2023-07-11 with total page 469 pages. Available in PDF, EPUB and Kindle. Book excerpt: 75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects the transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments. Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights: Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry Large scale integration, Moore's Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories — SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989) Image sensors (1986), including charge-coupled devices, and related microsensor applications With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.
Author : Samar K. Saha
Publisher : CRC Press
ISBN 13 : 0429998090
Total Pages : 318 pages
Book Rating : 4.4/5 (299 download)
Download or read book FinFET Devices for VLSI Circuits and Systems written by Samar K. Saha and published by CRC Press. This book was released on 2020-07-15 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt: To surmount the continuous scaling challenges of MOSFET devices, FinFETs have emerged as the real alternative for use as the next generation device for IC fabrication technology. The objective of this book is to provide the basic theory and operating principles of FinFET devices and technology, an overview of FinFET device architecture and manufacturing processes, and detailed formulation of FinFET electrostatic and dynamic device characteristics for IC design and manufacturing. Thus, this book caters to practicing engineers transitioning to FinFET technology and prepares the next generation of device engineers and academic experts on mainstream device technology at the nanometer-nodes.
Author : Henry Radamson
Publisher : Woodhead Publishing
ISBN 13 : 0081021402
Total Pages : 280 pages
Book Rating : 4.0/5 (81 download)
Download or read book CMOS Past, Present and Future written by Henry Radamson and published by Woodhead Publishing. This book was released on 2018-04-03 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS Past, Present and Future provides insight from the basics, to the state-of-the-art of CMOS processing and electrical characterization, including the integration of Group IV semiconductors-based photonics. The book goes into the pitfalls and opportunities associated with the use of hetero-epitaxy on silicon with strain engineering and the integration of photonics and high-mobility channels on a silicon platform. It begins with the basic definitions and equations, but extends to present technologies and challenges, creating a roadmap on the origins of the technology and its evolution to the present, along with a vision for future trends. The book examines the challenges and opportunities that materials beyond silicon provide, including a close look at high-k materials and metal gate, strain engineering, channel material and mobility, and contacts. The book's key approach is on characterizations, device processing and electrical measurements. Addresses challenges and opportunities for the use of CMOS Covers the latest methods of strain engineering, materials integration to increase mobility, nano-scaled transistor processing, and integration of CMOS with photonic components Provides a look at the evolution of CMOS technology, including the origins of the technology, current status and future possibilities
Author : Balwinder Raj
Publisher : CRC Press
ISBN 13 : 1000637506
Total Pages : 259 pages
Book Rating : 4.0/5 (6 download)
Download or read book Nanoscale Semiconductors written by Balwinder Raj and published by CRC Press. This book was released on 2022-08-30 with total page 259 pages. Available in PDF, EPUB and Kindle. Book excerpt: This reference text discusses conduction mechanism, structure construction, operation, performance evaluation and applications of nanoscale semiconductor materials and devices in VLSI circuits design. The text explains nano materials, devices, analysis of its design parameters to meet the sub-nano-regime challenges for CMOS devices. It discusses important topics including memory design and testing, fin field-effect transistor (FinFET), tunnel field-effect transistor (TFET) for sensors design, carbon nanotube field-effect transistor (CNTFET) for memory design, nanowire and nanoribbons, nano devices based low-power-circuit design, and microelectromechanical systems (MEMS) design. The book discusses nanoscale semiconductor materials, device models, and circuit design covers nanoscale semiconductor device structures and modeling discusses novel nano-semiconductor devices such as FinFET, CNTFET, and Nanowire covers power dissipation and reduction techniques Discussing innovative nanoscale semiconductor device structures and modeling, this text will be useful for graduate students, and academic researchers in diverse areas such as electrical engineering, electronics and communication engineering, nanoscience, and nanotechnology. It covers nano devices based low-power-circuit design, nanoscale devices based digital VLSI circuits, and novel devices based analog VLSI circuits design.
Author : D. Nirmal
Publisher : CRC Press
ISBN 13 : 0429862539
Total Pages : 430 pages
Book Rating : 4.4/5 (298 download)
Download or read book Handbook for III-V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author : David Chinnery
Publisher : Springer Science & Business Media
ISBN 13 : 0306478234
Total Pages : 422 pages
Book Rating : 4.3/5 (64 download)
Download or read book Closing the Gap Between ASIC & Custom written by David Chinnery and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt: by Kurt Keutzer Those looking for a quick overview of the book should fast-forward to the Introduction in Chapter 1. What follows is a personal account of the creation of this book. The challenge from Earl Killian, formerly an architect of the MIPS processors and at that time Chief Architect at Tensilica, was to explain the significant performance gap between ASICs and custom circuits designed in the same process generation. The relevance of the challenge was amplified shortly thereafter by Andy Bechtolsheim, founder of Sun Microsystems and ubiquitous investor in the EDA industry. At a dinner talk at the 1999 International Symposium on Physical Design, Andy stated that the greatest near-term opportunity in CAD was to develop tools to bring the performance of ASIC circuits closer to that of custom designs. There seemed to be some synchronicity that two individuals so different in concern and character would be pre-occupied with the same problem. Intrigued by Earl and Andy’s comments, the game was afoot. Earl Killian and other veterans of microprocessor design were helpful with clues as to the sources of the performance discrepancy: layout, circuit design, clocking methodology, and dynamic logic. I soon realized that I needed help in tracking down clues. Only at a wonderful institution like the University of California at Berkeley could I so easily commandeer an ab- bodied graduate student like David Chinnery with a knowledge of architecture, circuits, computer-aided design and algorithms.
Author : Marin Alexe
Publisher : Springer Science & Business Media
ISBN 13 : 3662108275
Total Pages : 510 pages
Book Rating : 4.6/5 (621 download)
Download or read book Wafer Bonding written by Marin Alexe and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.
Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1420066919
Total Pages : 472 pages
Book Rating : 4.4/5 (2 download)
Download or read book Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.
Author : David J Dumin
Publisher : World Scientific
ISBN 13 : 981448945X
Total Pages : 281 pages
Book Rating : 4.8/5 (144 download)
Download or read book Oxide Reliability: A Summary Of Silicon Oxide Wearout, Breakdown, And Reliability written by David J Dumin and published by World Scientific. This book was released on 2002-01-18 with total page 281 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents in summary the state of our knowledge of oxide reliability. The articles have been written by experts who are among the most knowledgeable in the field. The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can be used as an introduction for new engineers interested in oxide reliability, besides being a reference for engineers already engaged in the field.
Author : Eitan N. Shauly
Publisher : CRC Press
ISBN 13 : 1000631354
Total Pages : 831 pages
Book Rating : 4.0/5 (6 download)
Download or read book Design Rules in a Semiconductor Foundry written by Eitan N. Shauly and published by CRC Press. This book was released on 2022-11-30 with total page 831 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nowadays over 50% of integrated circuits are fabricated at wafer foundries. This book presents a foundry-integrated perspective of the field and is a comprehensive and up-to-date manual designed to serve process, device, layout, and design engineers. It comprises chapters carefully selected to cover topics relevant for them to deal with their work. The book provides an insight into the different types of design rules (DRs) and considerations for setting new DRs. It discusses isolation, gate patterning, S/D contacts, metal lines, MOL, air gaps, and so on. It explains in detail the layout rules needed to support advanced planarization processes, different types of dummies, and related utilities as well as presents a large set of guidelines and layout-aware modeling for RF CMOS and analog modules. It also discusses the layout DRs for different mobility enhancement techniques and their related modeling, listing many of the dedicated rules for static random-access memory (SRAM), embedded polyfuse (ePF), and LogicNVM. The book also provides the setting and calibration of the process parameters set and describes the 28~20 nm planar MOSFET process flow for low-power and high-performance mobile applications in a step-by-step manner. It includes FEOL and BEOL physical and environmental tests for qualifications together with automotive qualification and design for automotive (DfA). Written for the professionals, the book belongs to the bookshelf of microelectronic discipline experts.
