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Inp Based Npn And Pnp Heterojunction Bipolar Transistor Design Technology And Characterization For Enhanced High Frequency Power Amplification
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Book Synopsis InP-based NPN and PNP Heterojunction Bipolar Transistor Design, Technology, and Characterization for Enhanced High-frequency Power Amplification by : Donald James Sawdai
Download or read book InP-based NPN and PNP Heterojunction Bipolar Transistor Design, Technology, and Characterization for Enhanced High-frequency Power Amplification written by Donald James Sawdai and published by . This book was released on 1999 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis InP-based Materials and Heterostructure Devices, and the Applications in Monolithic Integrated NPN and PNP HBT Circuits by : Delong Cui
Download or read book InP-based Materials and Heterostructure Devices, and the Applications in Monolithic Integrated NPN and PNP HBT Circuits written by Delong Cui and published by . This book was released on 2001 with total page 658 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2000 with total page 856 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Low-frequency Noise-reliability Correlation and Noise, Power Characteristics of GaAs HBTs and High-speed Integrated Circuits by : Saeed Mohammadi
Download or read book Low-frequency Noise-reliability Correlation and Noise, Power Characteristics of GaAs HBTs and High-speed Integrated Circuits written by Saeed Mohammadi and published by . This book was released on 2000 with total page 410 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Thermionic Emission Diffusion Model of InP-based Pnp Heterojunction Bipolar Transistor with Non-uniform Base Doping by :
Download or read book Thermionic Emission Diffusion Model of InP-based Pnp Heterojunction Bipolar Transistor with Non-uniform Base Doping written by and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past few years, GaAs and InP and, more recently, GaN based Npn and Pnp Heterojunction Bipolar Transistors (HBTs) have been grown and their performance has been evaluated in great details due to their potential applications in microwave, millimeter-wave, optoelectronics and high-speed applications. This model includes the physics of hole thermionic-emission-diffusion injection at the emitter-base heterojunction and transport of holes across a linearly doped base, a calculation of the recombination currents in the base current including the effects of linear base doping, and a comparison of the effects of linear and uniform doping on current gain and base transit time. Our simulations show that the use of non-uniform doping in the base of Pnp HBTs helps increasing the DC current gain by as much as a factor of 4. Simultaneously, we show that the base transit time, which is the major component to the overall delay time, is reduced by factor of 2. This should help increasing the unit current gain frequency and high frequency performance of Pnp HBTs.
Book Synopsis Current Trends In Heterojunction Bipolar Transistors by : M F Chang
Download or read book Current Trends In Heterojunction Bipolar Transistors written by M F Chang and published by World Scientific. This book was released on 1996-01-29 with total page 437 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
Book Synopsis American Doctoral Dissertations by :
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1999 with total page 848 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis InP-based Heterojunction Bipolar Transistor Technology for High Speed Devices and Circuits by : John Charles Cowles (Jr.)
Download or read book InP-based Heterojunction Bipolar Transistor Technology for High Speed Devices and Circuits written by John Charles Cowles (Jr.) and published by . This book was released on 1994 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Fabrication and Characterization of InP-based Heterojunction Bipolar Transistors by : James C. Vlcek
Download or read book The Fabrication and Characterization of InP-based Heterojunction Bipolar Transistors written by James C. Vlcek and published by . This book was released on 1985 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Negative Differential Resistance Devices and Their Circuit Applications by : Cheng-Hui Lin
Download or read book Negative Differential Resistance Devices and Their Circuit Applications written by Cheng-Hui Lin and published by . This book was released on 2001 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis High-Frequency Bipolar Transistors by : Michael Reisch
Download or read book High-Frequency Bipolar Transistors written by Michael Reisch and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.
Book Synopsis Design of Millimeter-wave Power Amplifiers Using InP Heterojunction Bipolar Transistors by : Tomás O'Sullivan
Download or read book Design of Millimeter-wave Power Amplifiers Using InP Heterojunction Bipolar Transistors written by Tomás O'Sullivan and published by . This book was released on 2009 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt: The focus of this dissertation is on the development of high power, monolithically integrated amplifiers for millimeter-wave wireless communication systems utilizing InP DHBT devices. Due to the ever increasing bandwidth requirements of wireless communications systems, the large amount of spectrum available at millimeter-wave frequencies is making these frequency bands increasingly more relevant. This spurs the need for the development of the various circuit and system building blocks required for implementation of reliable communications systems taking advantage of these wide-band channels. The challenges posed in the development of millimeter-wave power amplifier design range from device model development, to circuit design aspects and also compact power combiner design. The large signal nature of power amplifier operation requires device models, which accurately capture the nonlinear and heating effects of the devices used in the power amplifier design. Techniques for the measurement and model extraction of InP DHBT devices for millimeter-wave applications are discussed in detail. As part of the design of a compact millimeter-wave power amplifier, the optimum design of thermal ballasting networks and cascode termination impedances are described. Design tradeoffs in the choice of load resistance for the design are also explained. Using these techniques, a compact power amplifier operating at 72GHz was designed exhibiting 20.6dBm output power and 13.9% PAE. Finally, the design of a novel planar radial power splitter and combiner architecture is described. Transmission lines, vertical transitions and microstrip crossovers required for the implementation of this structure are explained in detail. Using this structure a high power amplifier is designed with a center frequency of 72GHz. This amplifier demonstrates an output power of 24.6dBm along with a PAE of 8.9%.
Book Synopsis InP-based Heterojunction Bipolar Transistors for High Speed and RF Power Applications by : Changhyun Yi
Download or read book InP-based Heterojunction Bipolar Transistors for High Speed and RF Power Applications written by Changhyun Yi and published by . This book was released on 2002 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Simulation, Design, and Fabrication of InP-based Pnp Heterojunction Bipolar Transistors by : Suman Datta
Download or read book Simulation, Design, and Fabrication of InP-based Pnp Heterojunction Bipolar Transistors written by Suman Datta and published by . This book was released on 1999 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Physics-based compact modeling and parameter extraction for InP heterojunction bipolar transistors with special emphasis on material-specific physical effects and geometry scaling by : Tobias Nardmann
Download or read book Physics-based compact modeling and parameter extraction for InP heterojunction bipolar transistors with special emphasis on material-specific physical effects and geometry scaling written by Tobias Nardmann and published by BoD – Books on Demand. This book was released on 2017-08-28 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: The trend in modern electronics towards ever higher frequencies of operation and complexity as well as power efficiency requires a whole palette of different technologies to be available to circuit designers for various applications. While MOSFETs dominate the digital world, they have apparently reached their top analogue performance around the 65nm node. Emerging technologies such as CNTFETs offer excellent properties such as very high linearity and speed in theory, but have yet to deliver on those promises in practice. Heterojunction bipolar transistors (HBTs), on the other hand, offer a number of key advantages over competing technologies: A very high transconductance and therefore a relatively low impact of a load impedance on the transistor operation, a high transit frequency and maximum frequency of oscillation at a comparatively relaxed feature size and favorable noise characteristics. Like all semiconductor devices, HBTs can be fabricated in diferent semiconductor materials. The most common are SiGe HBTs, which even today reach values above (ft; fmax) = (300; 500) GHz and are projected to eventually reach the THz range. However, HBTs fabricated in III-V materials offer a versatile alternative. Depending on the materials that are used, III-V HBTs can be the fastest available bipolar transistors (competing only with HEMTs, also fabricated in III-V materials, for the title of fastest available transistors overall), offer very high breakdown voltages and therefore excellent power-handling capability, show good linearity or low noise figures at high frequencies. Typical applications for III-V HBTs include handset PAs, high-effciency and high-speed amplifiers as well as high-speed oscillators . Overall, III-V-based HBTs and especially InP HBTs are excellent candidates for future high-speed communication circuits. The goal of this work is to include important effects occurring in III-V materials in a compact model for circuit design in a physical, yet intuitive way in order to aid deployment of III-V HBTs in prototypes and products. Additionally, the parameter extraction procedure for the compact model is described and analyzed in detail so an accurate, physics-based parameter set can be obtained. Finally, the agreement of the model with measurements is demonstrated for three different III-V HBT processes.
Book Synopsis SiGe Heterojunction Bipolar Transistors by : Peter Ashburn
Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
Book Synopsis High-speed InP Heterojunction Bipolar Transistors and Integrated Circuits in Transferred Substrate Technology by : Tomas Krämer
Download or read book High-speed InP Heterojunction Bipolar Transistors and Integrated Circuits in Transferred Substrate Technology written by Tomas Krämer and published by . This book was released on 2010 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt:
