Indium Nitride Growth By Metal Organic Vapor Phase Epitaxy

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Metalorganic Vapor Phase Epitaxy (MOVPE)

Author : Stuart Irvine
Publisher : John Wiley & Sons
ISBN 13 : 1119313015
Total Pages : 582 pages
Book Rating : 4.1/5 (193 download)

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Book Synopsis Metalorganic Vapor Phase Epitaxy (MOVPE) by : Stuart Irvine

Download or read book Metalorganic Vapor Phase Epitaxy (MOVPE) written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Optoelectronic Devices

Author : M Razeghi
Publisher : Elsevier
ISBN 13 : 9780080444260
Total Pages : 602 pages
Book Rating : 4.4/5 (442 download)

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Book Synopsis Optoelectronic Devices by : M Razeghi

Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides

Handbook of Crystal Growth

Author : Tom Kuech
Publisher : Elsevier
ISBN 13 : 0444633057
Total Pages : 1384 pages
Book Rating : 4.4/5 (446 download)

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Book Synopsis Handbook of Crystal Growth by : Tom Kuech

Download or read book Handbook of Crystal Growth written by Tom Kuech and published by Elsevier. This book was released on 2014-11-02 with total page 1384 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume IIIA Basic TechniquesHandbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures.Volume IIIB Materials, Processes, and TechnologyHandbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials.Volume IIIA Basic Techniques - Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. - Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth - Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology - Describes atomic level epitaxial deposition and other low temperature growth techniques - Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials - Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials

Indium Nitride and Related Alloys

Author : Timothy David Veal
Publisher : CRC Press
ISBN 13 : 1439859612
Total Pages : 707 pages
Book Rating : 4.4/5 (398 download)

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Book Synopsis Indium Nitride and Related Alloys by : Timothy David Veal

Download or read book Indium Nitride and Related Alloys written by Timothy David Veal and published by CRC Press. This book was released on 2011-06-03 with total page 707 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the present state of knowledge in indium nitride (InN) research. It elucidates and clarifies the often confusing and contradictory scientific literature to provide valuable and rigorous insight into the structural, optical, and electronic properties of this quickly emerging semiconductor material and its related alloys. Drawing from both theoretical and experimental perspectives, it provides a thorough review of all data since 2001 when the band gap of InN was identified as 0.7 eV. The superior transport and optical properties of InN and its alloys offer tremendous potential for a wide range of device applications, including high-efficiency solar cells and chemical sensors. Indeed, the now established narrow band gap nature of InN means that the InGaN alloys cover the entire solar spectrum and InAlN alloys span from the infrared to the ultraviolet. However, with unsolved problems including high free electron density, difficulty in characterizing p-type doping, and the lack of a lattice-matched substrate, indium nitride remains perhaps the least understood III-V semiconductor. Covering the epitaxial growth, experimental characterization, theoretical understanding, and device potential of this semiconductor and its alloys, this book is essential reading for both established researchers and those new to the field.

Technology of Gallium Nitride Crystal Growth

Author : Dirk Ehrentraut
Publisher : Springer Science & Business Media
ISBN 13 : 3642048307
Total Pages : 337 pages
Book Rating : 4.6/5 (42 download)

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Book Synopsis Technology of Gallium Nitride Crystal Growth by : Dirk Ehrentraut

Download or read book Technology of Gallium Nitride Crystal Growth written by Dirk Ehrentraut and published by Springer Science & Business Media. This book was released on 2010-06-14 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.

Organometallic Vapor-Phase Epitaxy

Author : Gerald B. Stringfellow
Publisher : Elsevier
ISBN 13 : 0323139175
Total Pages : 417 pages
Book Rating : 4.3/5 (231 download)

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Book Synopsis Organometallic Vapor-Phase Epitaxy by : Gerald B. Stringfellow

Download or read book Organometallic Vapor-Phase Epitaxy written by Gerald B. Stringfellow and published by Elsevier. This book was released on 2012-12-02 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the special structures required for device applications. In addition, a comprehensive summary detailing the OMVPE results observed to date in a wide range of III-V and II-VI semiconductors is provided. This includes a comparison of results obtained through the use of other epitaxial techniques such as molecular beam epitaxy (MBE), liquid-phase epitaxy (LPE), and vapor phase epitaxy using halide transport.

Iii-Nitride Devices and Nanoengineering

Author : Zhe Chuan Feng
Publisher : Imperial College Press
ISBN 13 : 1848162243
Total Pages : 477 pages
Book Rating : 4.8/5 (481 download)

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Book Synopsis Iii-Nitride Devices and Nanoengineering by : Zhe Chuan Feng

Download or read book Iii-Nitride Devices and Nanoengineering written by Zhe Chuan Feng and published by Imperial College Press. This book was released on 2008 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt: Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.

Comprehensive Semiconductor Science and Technology

Author :
Publisher : Newnes
ISBN 13 : 0080932282
Total Pages : 3572 pages
Book Rating : 4.0/5 (89 download)

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Book Synopsis Comprehensive Semiconductor Science and Technology by :

Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

15th European Workshop on Metalorganic Vapour Phase Epitaxy (EWMOVPE XV)

Author :
Publisher : Forschungszentrum Jülich
ISBN 13 : 3893368701
Total Pages : 415 pages
Book Rating : 4.8/5 (933 download)

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Book Synopsis 15th European Workshop on Metalorganic Vapour Phase Epitaxy (EWMOVPE XV) by :

Download or read book 15th European Workshop on Metalorganic Vapour Phase Epitaxy (EWMOVPE XV) written by and published by Forschungszentrum Jülich. This book was released on 2013 with total page 415 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Dilute Nitride Semiconductors

Author : Mohamed Henini
Publisher : Elsevier
ISBN 13 : 0080455999
Total Pages : 648 pages
Book Rating : 4.0/5 (84 download)

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Book Synopsis Dilute Nitride Semiconductors by : Mohamed Henini

Download or read book Dilute Nitride Semiconductors written by Mohamed Henini and published by Elsevier. This book was released on 2004-12-15 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: - This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. - It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. - Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 μm and 1.55 μm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics - Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field - Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas - Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community

Handbook of GaN Semiconductor Materials and Devices

Author : Wengang (Wayne) Bi
Publisher : CRC Press
ISBN 13 : 1351648055
Total Pages : 775 pages
Book Rating : 4.3/5 (516 download)

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Book Synopsis Handbook of GaN Semiconductor Materials and Devices by : Wengang (Wayne) Bi

Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 775 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.

Proceedings of the Third Symposium on III-V Nitride Materials and Processes

Author : T. D. Moustakas
Publisher : The Electrochemical Society
ISBN 13 : 9781566772129
Total Pages : 246 pages
Book Rating : 4.7/5 (721 download)

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Book Synopsis Proceedings of the Third Symposium on III-V Nitride Materials and Processes by : T. D. Moustakas

Download or read book Proceedings of the Third Symposium on III-V Nitride Materials and Processes written by T. D. Moustakas and published by The Electrochemical Society. This book was released on 1999 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Advances in III-V Semiconductor Nanowires and Nanodevices

Author : Jianye Li
Publisher : Bentham Science Publishers
ISBN 13 : 1608050521
Total Pages : 186 pages
Book Rating : 4.6/5 (8 download)

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Book Synopsis Advances in III-V Semiconductor Nanowires and Nanodevices by : Jianye Li

Download or read book Advances in III-V Semiconductor Nanowires and Nanodevices written by Jianye Li and published by Bentham Science Publishers. This book was released on 2011-09-09 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires have been of great scientific and technological interest fo"

One-Dimensional Nanostructures

Author : Tianyou Zhai
Publisher : John Wiley & Sons
ISBN 13 : 1118310365
Total Pages : 857 pages
Book Rating : 4.1/5 (183 download)

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Book Synopsis One-Dimensional Nanostructures by : Tianyou Zhai

Download or read book One-Dimensional Nanostructures written by Tianyou Zhai and published by John Wiley & Sons. This book was released on 2012-10-19 with total page 857 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reviews the latest research breakthroughs and applications Since the discovery of carbon nanotubes in 1991, one-dimensional nanostructures have been at the forefront of nanotechnology research, promising to provide the building blocks for a new generation of nanoscale electronic and optoelectronic devices. With contributions from 68 leading international experts, this book reviews both the underlying principles as well as the latest discoveries and applications in the field, presenting the state of the technology. Readers will find expert coverage of all major classes of one-dimensional nanostructures, including carbon nanotubes, semiconductor nanowires, organic molecule nanostructures, polymer nanofibers, peptide nanostructures, and supramolecular nanostructures. Moreover, the book offers unique insights into the future of one-dimensional nanostructures, with expert forecasts of new research breakthroughs and applications. One-Dimensional Nanostructures collects and analyzes a wealth of key research findings and applications, with detailed coverage of: Synthesis Properties Energy applications Photonics and optoelectronics applications Sensing, plasmonics, electronics, and biosciences applications Practical case studies demonstrate how the latest applications work. Tables throughout the book summarize key information, and diagrams enable readers to grasp complex concepts and designs. References at the end of each chapter serve as a gateway to the literature in the field. With its clear explanations of the underlying principles of one-dimensional nanostructures, this book is ideal for students, researchers, and academics in chemistry, physics, materials science, and engineering. Moreover, One-Dimensional Nanostructures will help readers advance their own investigations in order to develop the next generation of applications.

Epitaxial Growth of III-Nitride Compounds

Author : Takashi Matsuoka
Publisher : Springer
ISBN 13 : 3319766414
Total Pages : 228 pages
Book Rating : 4.3/5 (197 download)

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Book Synopsis Epitaxial Growth of III-Nitride Compounds by : Takashi Matsuoka

Download or read book Epitaxial Growth of III-Nitride Compounds written by Takashi Matsuoka and published by Springer. This book was released on 2018-04-17 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.

Japanese Journal of Applied Physics

Author :
Publisher :
ISBN 13 :
Total Pages : 1198 pages
Book Rating : 4.:/5 (321 download)

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Book Synopsis Japanese Journal of Applied Physics by :

Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 2003 with total page 1198 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Controlled Growth of GaN Columns and 3D Core-Shell LEDs by MOVPE

Author : Xue Wang
Publisher : Cuvillier Verlag
ISBN 13 : 3736980000
Total Pages : 186 pages
Book Rating : 4.7/5 (369 download)

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Book Synopsis Controlled Growth of GaN Columns and 3D Core-Shell LEDs by MOVPE by : Xue Wang

Download or read book Controlled Growth of GaN Columns and 3D Core-Shell LEDs by MOVPE written by Xue Wang and published by Cuvillier Verlag. This book was released on 2015-06-11 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN three-dimensional columnar core-shell LEDs are considered to be one of the promising candidates for prospective solid state lighting. In comparison to conventional planar layer LEDs, columnar core-shell LEDs have many advantages. For instance, in a columnar GaN coreshell LED structure the InGaN/GaN MQW wraps around the column, therefore the light emitting area can be enormously increased. This is the main driving force behind the intense investigation of nanowire and micro-columnar LEDs. In addition, because of the increased area of the MQW, the internal quantum efficiency may be improved by a reduction of the local carrier density, mitigating the efficiency droop. Besides, due to the reduced influence of thermal and lattice mismatch between the substrate and columns, dislocation-free GaN column arrays can be achieved on large area substrates. The main contribution of the present work is the controlled growth of GaN columns and core-shell LEDs by metal-organic vapor-phase expitaxy. The growth conditions which lead to vertical growth of N-polar and Ga-polar GaN columns are systematically investigated. The causes of the vertical growth are explained by surface processes under appropriate conditions for both polarities. Quantitative discussions of growth kinetics of GaN columns are an important feature in this work. The difficulties and the strategies of the MQW and p-GaN shell growth on high aspect ratio GaN columns are presented in detail.