Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Imperfections And Active Centers In Semiconductors
Download Imperfections And Active Centers In Semiconductors full books in PDF, epub, and Kindle. Read online Imperfections And Active Centers In Semiconductors ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis Imperfections and Active Centres in Semiconductors by : R. G. Rhodes
Download or read book Imperfections and Active Centres in Semiconductors written by R. G. Rhodes and published by Elsevier. This book was released on 2014-05-12 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt: Imperfections and Active Centres in Semiconductors discusses principles of semiconduction theory in terms of the band model, and electrical properties as regards chemical or physical defects in the lattice structures. The book reviews the fundamental concepts of semiconductor crystals, semiconduction, silicon, and the atomic lattice of germanium. The Frenkel defect accounts for displaced atoms in the lattice that move into spaces between normal atom positions. The text describes dislocations or line defects, the motion and generation of dislocations, as well as the geometry of the dislocations in the diamond. Honrstra (1958), who shows the geometry of the dislocation structures through a diagram, also describes the geometry of more complicated types of dislocation in the diamond lattice. The book explains X-ray diffraction and crystal imperfections in which the amount of X-radiation reflected from a crystal specimen depends on the perfection or on the atomic structure of the reflecting planes. The electron microscope can reveal more detail in higher resolution, for example, the actual arrangement of the molecules around an edge dislocation has been exposed in a platinum phthalocyanine crystal. The book also describes the fabrication of semiconductor devices where the crystals are cut with an abrasive saw and then ground with fine abrasive. The text can be used by physicists, engineers, or technologists in the allied fields of solid state physics and materials engineering.
Book Synopsis Imperfections and Active Centers in Semiconductors by : R.G. Rhodes
Download or read book Imperfections and Active Centers in Semiconductors written by R.G. Rhodes and published by Franklin Book Company. This book was released on 1964 with total page 373 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Imperfections and Active Centres in Semiconductors by : Robert G. Rhodes
Download or read book Imperfections and Active Centres in Semiconductors written by Robert G. Rhodes and published by . This book was released on 1964 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Imperfections and Active Centres in Semiconductors by : R. G. Rhodes
Download or read book Imperfections and Active Centres in Semiconductors written by R. G. Rhodes and published by . This book was released on 1964 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Color Centers in Semiconductors for Quantum Applications by : Joel Davidsson
Download or read book Color Centers in Semiconductors for Quantum Applications written by Joel Davidsson and published by Linköping University Electronic Press. This book was released on 2021-02-08 with total page 72 pages. Available in PDF, EPUB and Kindle. Book excerpt: Point defects in semiconductors have been and will continue to be relevant for applications. Shallow defects realize transistors, which power the modern age of information, and in the not-too-distant future, deep-level defects could provide the foundation for a revolution in quantum information processing. Deep-level defects (in particular color centers) are also of interest for other applications such as a single photon emitter, especially one that emits at 1550 nm, which is the optimal frequency for long-range communication via fiber optics. First-principle calculations can predict the energies and optical properties of point defects. I performed extensive convergence tests for magneto-optical properties, such as zero phonon lines, hyperfine coupling parameters, and zero-field splitting for the four different configurations of the divacancy in 4H-SiC. Comparing the converged results with experimental measurements, a clear identification of the different configurations was made. With this approach, I also identified all configurations for the silicon vacancy in 4H-SiC as well as the divacancy and silicon vacancy in 6H-SiC. The same method was further used to identify two additional configurations belonging to the divacancy present in a 3C stacking fault inclusion in 4H-SiC. I extended the calculated properties to include the transition dipole moment which provides the polarization, intensity, and lifetime of the zero phonon lines. When calculating the transition dipole moment, I show that it is crucial to include the self-consistent change of the electronic orbitals in the excited state due to the geometry relaxation. I tested the method on the divacancy in 4H-SiC, further strengthening the previous identification and providing accurate photoluminescence intensities and lifetimes. Finding stable point defects with the right properties for a given application is a challenging task. Due to the vast number of possible point defects present in bulk semiconductor materials, I designed and implemented a collection of automatic workflows to systematically investigate any point defects. This collection is called ADAQ (Automatic Defect Analysis and Qualification) and automates every step of the theoretical process, from creating defects to predicting their properties. Using ADAQ, I screened about 8000 intrinsic point defect clusters in 4H-SiC. This thesis presents an overview of the formation energy and the most relevant optical properties for these single and double point defects. These results show great promise for finding new color centers suitable for various quantum applications.
Book Synopsis Point and Extended Defects in Semiconductors by : Giorgio Benedek
Download or read book Point and Extended Defects in Semiconductors written by Giorgio Benedek and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.
Book Synopsis D(X) Centres and other Metastable Defects in Semiconductors, Proceedings of the INT Symposium, Mauterndorf, Austria, 18-22 February 1991 by : W. Jantsch
Download or read book D(X) Centres and other Metastable Defects in Semiconductors, Proceedings of the INT Symposium, Mauterndorf, Austria, 18-22 February 1991 written by W. Jantsch and published by CRC Press. This book was released on 2020-11-25 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the first reports on metastable defects in III-V and II-VI compound semiconductors appeared in the late 1960s, the number of reports on defects with metastable states has been growing at an ever increasing rate. D(X)-center and other metastability defects cause many technical problems that are exacerbated by the uncertainty and controversy surrounding the mechanisms that cause them. A lively mix of theoretical and experimental discussions, D(X)-Centres and other Metastable Defects in Semiconductors presents a timely investigation of these systems. The book discusses topics such as, the validity of negative or positive U models, as well as alternative views that challenge existing ideas. The richness and precision of experimental data now emerging in the field is chronicled as are new investigative techniques. Based on an INT symposium, this book provides a successful forum where an extraordinary variety of ideas, including new perspectives, are examined critically.
Book Synopsis Defects and Diffusion in Semiconductors by : David J. Fisher
Download or read book Defects and Diffusion in Semiconductors written by David J. Fisher and published by Trans Tech Publications Ltd. This book was released on 2002-11-11 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This fifth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period of mid-2001 to mid-2002. The scope of this coverage again includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics" series. However, the invited papers this time deal exclusively with staple semiconducting materials: including work on interstitial clusters, intrinsic point defects, and {113} defects in silicon; defect states in InAs quantum dots and defect generation at ZnSe/GaAs interfaces. There are also papers treating a wide range of general themes: such as tracer diffusion in a concentrated lattice gas, defect luminescence in layered chalcogenide semiconductors, defect formation after laser thermal processing, redistribution of point defects in an inhomogeneous temperature field, and very general mathematical techniques for determining basic diffusion parameters.
Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Expert contributors Reviews of the most important recent literature Clear illustrations A broad view, including examination of defects in different semiconductors
Book Synopsis Semiconductor Silicon Crystal Technology by : Fumio Shimura
Download or read book Semiconductor Silicon Crystal Technology written by Fumio Shimura and published by Elsevier. This book was released on 2012-12-02 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Silicon Crystal Technology provides information pertinent to silicon, which is the dominant material in the semiconductor industry. This book discusses the technology of integrated circuits (ICs) in electronic materials manufacturer. Comprised of eight chapters, this book provides an overview of the basic science, silicon materials, IC device fabrication processes, and their interaction for enhancing both the processes and materials. This text then proceeds with a discussion of the atomic structure and bonding mechanisms in order to understand the nature and formation of crystal structures, which are the fundamentals of material science. Other chapters consider the technological crystallography and classify natural crystal morphologies based on observation. The final chapter deals with the interrelationships among silicon material characteristics, circuit design, and IC fabrication in order to ensure the fabrication of very-large-scale-integration/ultra-large-scale-integration circuits. This book is a valuable resource for graduate students, physicists, engineers, materials scientists, and professionals involved in semiconductor industry.
Book Synopsis Deep Centers in Semiconductors by : Sokrates T. Pantelides
Download or read book Deep Centers in Semiconductors written by Sokrates T. Pantelides and published by CRC Press. This book was released on 1992-11-30 with total page 952 pages. Available in PDF, EPUB and Kindle. Book excerpt: Examines several key semiconductor deep centers, all carefully chosen to illustrate a variety of essential concepts. A deep center is a lattice defect or impurity that causes very localized bound states and energies deep in the band gap. For each deep center chosen, a scientist instrumental in its development discusses the theoretical and experimental techniques used to understand that center. The second edition contains four new sections treating recent developments, including a chapter on hydrogen in crystalline semiconductors. Annotation copyright by Book News, Inc., Portland, OR
Book Synopsis Defects and Diffusion in Semiconductors XIII by : David J. Fisher
Download or read book Defects and Diffusion in Semiconductors XIII written by David J. Fisher and published by Trans Tech Publications Ltd. This book was released on 2011-07-04 with total page 199 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thirteenth volume in the series covering the latest results in the field includes abstracts of papers which have appeared since the publication of Annual Retrospective XII (Volumes 303-304). As well as the over 300 semiconductor-related abstracts, the issue includes the original papers: Effect of KCl Addition upon the Photocatalytic Activity of Zinc Sulphide (D.Vaya, A.Jain, S.Lodha, V.K.Sharma, S.C.Ameta), Localized Vibrational Mode in Manganese-Doped Zinc Sulphide and Cadmium Sulphide Nanoparticles (M.Ragam, N.Sankar, K.Ramachandran), The Effect of a Light Impurity on the Electronic Structure of Dislocations in NiAl (L.Chen, Z.Qiu), Analysis of Finite Element Discretisation Schemes for Multi-Phase Darcy Flow (D.P.Adhikary, A.H.Wilkins), Theoretical Investigations of the Defect Structure for Ni3+ in ZnO (Z.H.Zhang, S.Y.Wu, S.X.Zhang).
Book Synopsis Semiconductor Devices and Integrated Electronics by : A. G. Milnes
Download or read book Semiconductor Devices and Integrated Electronics written by A. G. Milnes and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 1014 pages. Available in PDF, EPUB and Kindle. Book excerpt: For some time there has been a need for a semiconductor device book that carries diode and transistor theory beyond an introductory level and yet has space to touch on a wider range of semiconductor device principles and applica tions. Such topics are covered in specialized monographs numbering many hun dreds, but the voluminous nature of this literature limits access for students. This book is the outcome of attempts to develop a broad course on devices and integrated electronics for university students at about senior-year level. The edu cational prerequisites are an introductory course in semiconductor junction and transistor concepts, and a course on analog and digital circuits that has intro duced the concepts of rectification, amplification, oscillators, modulation and logic and SWitching circuits. The book should also be of value to professional engineers and physicists because of both, the information included and the de tailed guide to the literature given by the references. The aim has been to bring some measure of order into the subject area examined and to provide a basic structure from which teachers may develop themes that are of most interest to students and themselves. Semiconductor devices and integrated circuits are reviewed and fundamental factors that control power levels, frequency, speed, size and cost are discussed. The text also briefly mentions how devices are used and presents circuits and comments on representative applications. Thus, the book seeks a balance be tween the extremes of device physics and circuit design.
Book Synopsis Lectures on Solid State Physics by : Georg Busch
Download or read book Lectures on Solid State Physics written by Georg Busch and published by Elsevier. This book was released on 2013-10-22 with total page 555 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lectures on Solid State Physics is a compilation of lectures concerned with various branches of solid state physics. It aims to develop basic physical ideas that lead to a better understanding of phenomena and effects. Comprised of 11 chapters, this book discusses several topics on solid state physics: structure of solids; interference effects in crystals; lattice dynamics; perfect and imperfect crystals; electrons and electron theory of metals; semiconductors; electrical contact effects; transport phenomena, and magnetism. Students, physics graduates, electrical engineers, chemists, and metallurgists will find this book invaluable.
Book Synopsis The Formation of Structural Imperfections in Semiconductor Silicon by : V. I. Talanin
Download or read book The Formation of Structural Imperfections in Semiconductor Silicon written by V. I. Talanin and published by Cambridge Scholars Publishing. This book was released on 2018-12-14 with total page 281 pages. Available in PDF, EPUB and Kindle. Book excerpt: Today, it is difficult to imagine all spheres of human activity without personal computers, solid-state electronic devices, micro- and nanoelectronics, photoconverters, and mobile communication devices. The basic material of modern electronics and for all of these industries is semiconductor silicon. Its properties and applications are determined by defects in its crystal structure. However, until now, there has been no complete and reliable description of the creation and transformation of such a defective structure. This book solves this mystery through two different approaches to semiconductor silicon: the classical and the probabilistic. This book brings together, for the first time, all existing experimental and theoretical information on the internal structure of semiconductor silicon. It will appeal to a wide range of readers, from materials scientists and practical engineers to students.
Book Synopsis Imperfections and Impurities in Semiconductor Silicon by : K. V. Ravi
Download or read book Imperfections and Impurities in Semiconductor Silicon written by K. V. Ravi and published by John Wiley & Sons. This book was released on 1981 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis VLSI Fabrication Principles by : Sorab K. Ghandhi
Download or read book VLSI Fabrication Principles written by Sorab K. Ghandhi and published by John Wiley & Sons. This book was released on 1994-03-31 with total page 870 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fully updated with the latest technologies, this edition covers thefundamental principles underlying fabrication processes forsemiconductor devices along with integrated circuits made fromsilicon and gallium arsenide. Stresses fabrication criteria forsuch circuits as CMOS, bipolar, MOS, FET, etc. These diversetechnologies are introduced separately and then consolidated intocomplete circuits. An Instructor's Manual presenting detailed solutions to all theproblems in the book is available from the Wiley editorialdepartment.
