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Author : Song Stone Shi
Publisher :
ISBN 13 :
Total Pages : 121 pages
Book Rating : 4.:/5 (391 download)
Download or read book Hydrogen Passivation of Native Oxides in GaAs-based III-V Devices written by Song Stone Shi and published by . This book was released on 1997 with total page 121 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 38 pages
Book Rating : 4.:/5 (227 download)
Download or read book III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices (On Silicon). Oxide-Defined Semiconductor Quantum Well Lasers and Optoelectrnic Devices: A1-Based III-V Native Oxides written by and published by . This book was released on 1992 with total page 38 pages. Available in PDF, EPUB and Kindle. Book excerpt: Measurements of the hole density in heavily carbon-doped GaAs and A1x, Gal-xAs as a function of the annealing temperature are presented. It is shown that the hole density increases and the hole mobility decreases after annealing at low temperatures (T 550 deg C). However, higher annealing temperatures (T 600 deg C) result in a reduction of the hole concentration reaching a maximum carrier concentration of = 5 x 1019 cm-3. These changes observed in the electrical properties can be explained by two mechanisms: (1) the passivation of carbon acceptors by hydrogen incorporated during growth; and (2) the change in the lattice site location of carbon atoms, which is dependent on the total carbon concentration.
Author : S. J. Pearton
Publisher :
ISBN 13 :
Total Pages : 560 pages
Book Rating : 4.3/5 (91 download)
Download or read book Hydrogen in Compound Semiconductors written by S. J. Pearton and published by . This book was released on 1994 with total page 560 pages. Available in PDF, EPUB and Kindle. Book excerpt: State-of-the-art reviews on all the major areas of interest are brought together in this book, namely the role of hydrogen during epitaxial growth, its entry into the material during processing, its subsequent diffusivity and bonding with dopants, other impurities or defects, its effect on device performance and reliability and positive uses for hydrogen in passivating surfaces.
Author : H. Hasegawa
Publisher :
ISBN 13 :
Total Pages : 328 pages
Book Rating : 4.3/5 (91 download)
Download or read book Compound Semiconductor Surface Passivation and Novel Device Processing: Volume 573 written by H. Hasegawa and published by . This book was released on 1999-07-13 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound semiconductors, such as GaAs and InP, typically have relatively high surface recombination velocities compared to silicon, and are subject to disruption of the surface during device processing. These two themes formed the basis for the April 1999 symposium. The 34 papers are divided into five broad topics areas: fundamentals of surfaces and their passivation, novel approaches for surface passivation and device processing, the structural, transport and optical properties of oxides, compound semiconductor surface passivation and novel device processing, and electronic devices and processing. Annotation copyrighted by Book News, Inc., Portland, OR
Author :
Publisher :
ISBN 13 :
Total Pages : 2540 pages
Book Rating : 4.3/5 (91 download)
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Michael Brian Ives
Publisher : The Electrochemical Society
ISBN 13 : 9781566773041
Total Pages : 1000 pages
Book Rating : 4.7/5 (73 download)
Download or read book Passivity of Metals and Semiconductors written by Michael Brian Ives and published by The Electrochemical Society. This book was released on 2001 with total page 1000 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : S. A. Ringel
Publisher :
ISBN 13 :
Total Pages : 338 pages
Book Rating : 4.3/5 (91 download)
Download or read book III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics: Volume 535 written by S. A. Ringel and published by . This book was released on 1999-08-11 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the proceedings of two symposia - 'Integration of Dissimilar Materials in Micro- and Optoelectronics' and 'III-V and SiGe Group IV Device/IC Processing Challenges for Commercial Applications'. The publication stems from the desire to achieve new levels of device functionality and higher levels of performance via integration of devices based on dissimilar semiconductors, where the constraint of lattice-matching on the breadth of attainable devices can be reduced. It covers fundamental topics germane to integration of a wide range of dissimilar materials spanning wide-bandgap III-V nitrides, III-V/Si integration, II-VI and II-VI/III-V compounds, heterovalent structures, oxides, photonic bandgap structures and others. Topics such as compliancy, dislocation control, selective area growth, bonding methodologies, etc. are featured. It also addresses processing issues in the manufacturing of III-V and Si-based heterostructures for commercial products. Here, the success enjoyed by silicon germanium technology is contrasted by the promise of silicon-carbon alloys which have opportunities and challenges for the new generation of process developers.
Author : Kompa, Günter
Publisher : kassel university press GmbH
ISBN 13 : 3862195414
Total Pages : 762 pages
Book Rating : 4.8/5 (621 download)
Download or read book Basic Properties of III-V Devices – Understanding Mysterious Trapping Phenomena written by Kompa, Günter and published by kassel university press GmbH. This book was released on 2014 with total page 762 pages. Available in PDF, EPUB and Kindle. Book excerpt: Trapping effects in III-V devices pose a great challenge to any microwave device modeler. Understanding their physical origins is of prime importance to create physics-related reliable device models. The treatment of trapping phenomena is commonly beyond the classical higher-education level of communication engineers. This book provides any basic material needed to understand trapping effects occurring primarily in GaAs and GaN power HEMT devices. As the text material covers interdisciplinary topics such as crystal defects and localized charges, trap centers and trap dynamics, deep-level transient spectroscopy, and trap centers in passivation layers, the book will be of interest to graduate students of electrical engineering, communication engineering, and physics as well as materials, device, and circuit engineers in research and industry.
Author : Hari Singh Nalwa
Publisher : Elsevier
ISBN 13 : 0080533825
Total Pages : 1915 pages
Book Rating : 4.0/5 (85 download)
Download or read book Handbook of Surfaces and Interfaces of Materials, Five-Volume Set written by Hari Singh Nalwa and published by Elsevier. This book was released on 2001-10-26 with total page 1915 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook brings together, under a single cover, all aspects of the chemistry, physics, and engineering of surfaces and interfaces of materials currently studied in academic and industrial research. It covers different experimental and theoretical aspects of surfaces and interfaces, their physical properties, and spectroscopic techniques that have been applied to a wide class of inorganic, organic, polymer, and biological materials. The diversified technological areas of surface science reflect the explosion of scientific information on surfaces and interfaces of materials and their spectroscopic characterization. The large volume of experimental data on chemistry, physics, and engineering aspects of materials surfaces and interfaces remains scattered in so many different periodicals, therefore this handbook compilation is needed.The information presented in this multivolume reference draws on two decades of pioneering research on the surfaces and interfaces of materials to offer a complete perspective on the topic. These five volumes-Surface and Interface Phenomena; Surface Characterization and Properties; Nanostructures, Micelles, and Colloids; Thin Films and Layers; Biointerfaces and Applications-provide multidisciplinary review chapters and summarize the current status of the field covering important scientific and technological developments made over past decades in surfaces and interfaces of materials and spectroscopic techniques with contributions from internationally recognized experts from all over the world. Fully cross-referenced, this book has clear, precise, and wide appeal as an essential reference source long due for the scientific community. The complete reference on the topic of surfaces and interfaces of materialsThe information presented in this multivolume reference draws on two decades of pioneering researchProvides multidisciplinary review chapters and summarizes the current status of the fieldCovers important scientific and technological developments made over past decades in surfaces and interfaces of materials and spectroscopic techniquesContributions from internationally recognized experts from all over the world
Author : Cammy R Abernathy
Publisher : World Scientific
ISBN 13 : 981450159X
Total Pages : 565 pages
Book Rating : 4.8/5 (145 download)
Download or read book Topics In Growth And Device Processing Of Iii-v Semiconductors written by Cammy R Abernathy and published by World Scientific. This book was released on 1996-11-09 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.
Author : Serge Oktyabrsky
Publisher : Springer Science & Business Media
ISBN 13 : 1441915478
Total Pages : 451 pages
Book Rating : 4.4/5 (419 download)
Download or read book Fundamentals of III-V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Author :
Publisher : The Electrochemical Society
ISBN 13 : 9781566774260
Total Pages : 574 pages
Book Rating : 4.7/5 (742 download)
Download or read book Microelectronics Technology and Devices written by and published by The Electrochemical Society. This book was released on 2005 with total page 574 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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Publisher :
ISBN 13 :
Total Pages : 15 pages
Book Rating : 4.:/5 (227 download)
Download or read book Passivation of III-V Compound Semiconductor Based Devices written by and published by . This book was released on 1993 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt: Our results indicate that excellent passivation of SiNx/GaAs and SiNx/InP interfaces can be achieved using both liquid and gaseous sulfur treatments of the surface. It is important to note that the S-treated surfaces are stable in the presence of an 'soft' ECR plasma and are amenable to the environment of SiNx growth. Annealing appears to be a crucial step in achieving lower defect densities at the SiNx/III-V interfaces. A significant reduction in the interfacial defect density leads to unpinning of the Fermi-level at the interfaces. This permits fabrication of superior metal-semiconductor (both Schottky and ohmic) junctions and metal-insulator-semiconductor FETs. Furthermore, reduction of defects at the interface also reduces the surface recombination velocity, thus improving the performance of minority carrier based devices. We have demonstrated that such is indeed the case by passivating AlGaAs/GaAs based heterojunction bipolar transistors and surface-emitting lasers.
Author : Albert G. Baca
Publisher : IET
ISBN 13 : 9780863413537
Total Pages : 372 pages
Book Rating : 4.4/5 (135 download)
Download or read book Fabrication of GaAs Devices written by Albert G. Baca and published by IET. This book was released on 2005-09 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.
Author : H. Schlötterer
Publisher : Elsevier
ISBN 13 : 0444596755
Total Pages : 542 pages
Book Rating : 4.4/5 (445 download)
Download or read book Materials for Optoelectronic Devices, OEICs and Photonics written by H. Schlötterer and published by Elsevier. This book was released on 1991-10-08 with total page 542 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of the contributions in this volume is to give a current overview on the basic properties and applications of semiconductor and nonlinear optical materials for optoelectronics and integrated optics. They provide a cross-linkage between different materials (III-V, II-VI, Si-Ge, glasses, etc.), various sample dimensions (from bulk crystals to quantum dots), and a range of techniques for growth (LPE to MOMBE) and for processing (from surface passivation to ion beams). Major growth techniques and materials are discussed, including the sophisticated technologies required to exploit the exciting properties of low dimensional semiconductors. These proceedings will prove an invaluable guide to the current state of optoelectronic and nonlinear optical materials development, as well as indicating trends and also future markets for optoelectronic devices.
Author : Vikram Kumar
Publisher : Allied Publishers
ISBN 13 : 9780819445001
Total Pages : 748 pages
Book Rating : 4.4/5 (45 download)
Download or read book Physics of Semiconductor Devices written by Vikram Kumar and published by Allied Publishers. This book was released on 2002 with total page 748 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 422 pages
Book Rating : 4.3/5 (91 download)
Download or read book Journal of the Institution of Electronics and Telecommunication Engineers written by and published by . This book was released on 1992 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt:
