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High Temperature And High Gain Gallium Nitride Silicon Carbide Heterojunction Bipolar Transistors
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Book Synopsis High Temperature and High Gain Gallium Nitride/silicon Carbide Heterojunction Bipolar Transistors by : Shih-shun Chang
Download or read book High Temperature and High Gain Gallium Nitride/silicon Carbide Heterojunction Bipolar Transistors written by Shih-shun Chang and published by . This book was released on 1996 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design and Fabrication of Gallium Nitride/silicon Carbide Heterojunction Bipolar Transistors by : Hong Wu
Download or read book Design and Fabrication of Gallium Nitride/silicon Carbide Heterojunction Bipolar Transistors written by Hong Wu and published by . This book was released on 2003 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Nitride and Silicon Carbide Power Technologies by : K. Shenai
Download or read book Gallium Nitride and Silicon Carbide Power Technologies written by K. Shenai and published by The Electrochemical Society. This book was released on 2011 with total page 361 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Nitride And Silicon Carbide Power Devices by : B Jayant Baliga
Download or read book Gallium Nitride And Silicon Carbide Power Devices written by B Jayant Baliga and published by World Scientific Publishing Company. This book was released on 2016-12-12 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.
Book Synopsis High Temperature Heterojunction Bipolar Transistors by :
Download or read book High Temperature Heterojunction Bipolar Transistors written by and published by . This book was released on 1994 with total page 27 pages. Available in PDF, EPUB and Kindle. Book excerpt: The program objective was to develop deposition conditions for wide bandgap nitride semiconductors consistent with the requirements for either bipolar junction transistors or field effect transistors that can function at high speed in environments having elevated temperatures. The fundamental material for these studies was gallium nitride. We proceeded to define crystal growth parameters for preparing epitaxial thin films of InGa(1-x)N alloys which feature smaller bandgaps than GaN. To grow the nitride alloys, we used a modified metalorganic chemical vapor deposition (MOCVD) reactor which provided activated nitrogen generated as an electron cyclotron resonance microwave plasma. Samples were successfully prepared with compositions throughout the alloy series, viz, with bandgaps ranging from 1.9 eV (InN) to 3.4 eV (GaN). The films were transparent with specular surfaces, and X-ray diffraction studies showed the GaN was single crystalline with the c-axis perpendicular to the substrate. The nitride alloys varied in color from deep red to yellow. We believe that is the first report of preparing InGa(1-x)N alloys in a plasma assisted MOCVD reactor. Because we can vary the bandgap of In(x)Ga(1-x)N as desired, we can control the potential barrier between the base and emitter in a heterojunction bipolar transistor, or the spacer and the channel in a high electron mobility field effect transistor. Bipolar junction transistor, High temperature, ECR Plasma, Nitride MOCVD.
Book Synopsis SiGe Heterojunction Bipolar Transistors by : Peter Ashburn
Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
Book Synopsis GaN-based Materials and Devices by : Michael Shur
Download or read book GaN-based Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2004 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
Book Synopsis A Study of Aluminium Gallium Nitride/gallium Nitride Polarization Barriers, Aluminium Gallium Nitride/silicon Carbide Heterojunction Bipolar Transistors and Polarization-based Ohmic Contacts by : Choudhury Jayant Praharaj
Download or read book A Study of Aluminium Gallium Nitride/gallium Nitride Polarization Barriers, Aluminium Gallium Nitride/silicon Carbide Heterojunction Bipolar Transistors and Polarization-based Ohmic Contacts written by Choudhury Jayant Praharaj and published by . This book was released on 2004 with total page 115 pages. Available in PDF, EPUB and Kindle. Book excerpt: Three perpendicular-transport structures using wide band-gap semiconductors were studied. A 50 A thick Aluminium Gallium Nitride polarization barrier showed rectifying characteristics as predicted by theory. Heterojunction Bipolar Transistors using n-Gallium Nitride/p-Silicon Carbide emitter and n-Aluminium Gallium Nitride/p-Gallium Nitride/p-Silicon Carbide emitter, and Silicon Carbide collector, were fabricated and characterized for current gain. The Heterojunction Bipolar Transistor with n-Gallium Nitride/p-Silicon Carbide emitter showed no modulation of output current with input current due to small unrecombined electron currents and large collector-base leakage currents. The Heterojunction Bipolar Transistor with n-Aluminium Gallium Nitride/p-Gallium Nitride/p-Silicon Carbide emitter had a current gain of 0.02. Ohmic contacts to p-type Gallium Nitride using Indium Gallium Nitride cap layers and to p-type Aluminium Gallium Nitride using Gallium Nitride cap layers were designed. Large improvements in ohmic contact resistances were predicted over ohmic contacts to bulk p-type nitride materials in the absence of cap layers.
Book Synopsis Ballistic Missile Defense Organization by : Pat Hartary
Download or read book Ballistic Missile Defense Organization written by Pat Hartary and published by DIANE Publishing. This book was released on 1999-06 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt: Highlights 50 of Ballistic Missile Defense Organization's (BMDO) best success stories emerging from technology transfer in the past year. Covers technologies such as: communications and displays, computer hardware and software, manufacturing, materials, medicine, optics, sensors, and dual-use technologies. Also discusses the program's integrated efforts to support BMDO-funded technologies at various stages of development through the following approaches: making industry aware of BMDO-funded innovations, guiding researchers in the commercialization process, leveraging coop. relationships; and testing innovative models to commercialize BMDO-funded technology.
Book Synopsis Exploratory Development of SiC Bipolar Transistors and GaN Heterojunction Bipolar Transistors for High-Power Switching Applications by :
Download or read book Exploratory Development of SiC Bipolar Transistors and GaN Heterojunction Bipolar Transistors for High-Power Switching Applications written by and published by . This book was released on 2003 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt: Homojunction bipolar transistors (BJTs) have been designed, fabricated, and characterized in 4H-SiC Devices optimized for high current gain have betas as high as 55, a new record for SiC BJTs. Devices optimized for blocking voltage exhibit blocking voltages of 3,200 V, again a new record for SiC BJTs. For the high-gain devices, the critical parameter is the base doping, which must be high enough to prevent punchthrough, while low enough to achieve a high emitter injection efficiency. The optimum value in these devices is a doping of about 1xl0(17) cm(3) at a base thickness of 1 micron. Another critical parameter is the lateral spacing between the edge of the emitter and the implanted P+ region used to form the base contact.
Book Synopsis Current Trends In Heterojunction Bipolar Transistors by : M F Chang
Download or read book Current Trends In Heterojunction Bipolar Transistors written by M F Chang and published by World Scientific. This book was released on 1996-01-29 with total page 437 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
Book Synopsis Material and Device Studies for the Development of Gallium Nitride Heterojunction Bipolar Transistors by Molecular Beam Epitaxy by : Wei Li
Download or read book Material and Device Studies for the Development of Gallium Nitride Heterojunction Bipolar Transistors by Molecular Beam Epitaxy written by Wei Li and published by . This book was released on 2008 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: Due to its unique physical properties, gallium nitride (GaN) is under intense investigation for the development of transistors for high power, high frequency and high temperature applications. The majority of existing literature addresses field effect transistors. This dissertation addresses a wide spectrum of materials and device studies required for the development of GaN-based heterojunction bipolar transistors (HBTs). The investigated structure has the emitter region based on n-Al x Ga 1-x N alloys, while the base and collector were based on p-In y Ga 1-y N and n-GaN, respectively. The growth and doping of the various layers of the transistor structure, on sapphire substrate, GaN-templates and free standing GaN substrates are addressed. Particular emphasis was placed on the p-type doping of the AlGaN and InGaN alloys with magnesium, both doping of bulk films as well as superlattices. The experimental results were compared with theoretical predictions of a self-consistent solution to the one-dimensional poisson and schrodinger equations. A hole concentration for p-InGaN of 9x10 18 CM -3 was obtained, which is the highest value published. The device aspect of this research addressed issues related to the development of novel methods of selective growth by molecular beam epitaxy (MBE) of the emitter onto the base. This was found to be necessary to avoid damage of the base during mesa etching. The final product of this research was the fabrication and DC characterization of HBT devices. This included various lithography, metallization, etching and annealing steps. The devices were evaluated under common base and common emitter configurations and the best result obtained was a room temperature gain of 59.
Book Synopsis Silicon-germanium Heterojunction Bipolar Transistors by : John D. Cressler
Download or read book Silicon-germanium Heterojunction Bipolar Transistors written by John D. Cressler and published by Artech House. This book was released on 2003 with total page 590 pages. Available in PDF, EPUB and Kindle. Book excerpt: This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.
Book Synopsis A Study of Aluminum Gallium Nitride/gallium Nitride Polarization Barriers, Aluminum Gallium Nitride/silicon Carbide Heterojunction Bipolar Transistors and Polarization-based Ohmic Contacts by : Choudhury Jayant Praharaj
Download or read book A Study of Aluminum Gallium Nitride/gallium Nitride Polarization Barriers, Aluminum Gallium Nitride/silicon Carbide Heterojunction Bipolar Transistors and Polarization-based Ohmic Contacts written by Choudhury Jayant Praharaj and published by . This book was released on 2004 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ultra-Fast Silicon Bipolar Technology by : Ludwig Treitinger
Download or read book Ultra-Fast Silicon Bipolar Technology written by Ludwig Treitinger and published by Springer Science & Business Media. This book was released on 2013-03-13 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. The strong world wide competition in fabricating metal-oxide-semiconductor field-effect of develop transistor (MOSFET) memories has accelerated the pace ments in semiconductor technology. Bipolar transistors play a major role due to their high-speed performance. Delay times of about 20 ps per gate have already been achieved. Because of this rapid technologi cal progress, it is difficult to predict the future with any certainty. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference. Its aim was to sum marize the most recent developments and to discuss the future of bip olar transistors. This book is based on that session but also includes contributions by other participants, such that a broad range of up-to is presented. Several conclusions can be drawn from date information this information: the first and most important is the very large poten tial for future progress still existing in this field. This progress is char acterized by the drive towards higher speed and lower power con sumption required for complex single-chip systems, as well as by sev eral concrete technological implementations for fulfilling these dem is that a large part of this potential can be ands. The second conclusion realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication.
Book Synopsis Demonstration and Modeling of a Nitride-based Heterojunction Bipolar Transistor Using Nanomembrane Transfer by : Clincy Cheung
Download or read book Demonstration and Modeling of a Nitride-based Heterojunction Bipolar Transistor Using Nanomembrane Transfer written by Clincy Cheung and published by . This book was released on 2023 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heterojunction bipolar transistors (HBT) are sought as a building block for implementation of modern broadband electronics, defense applications, and other mm-wave electronic systems demanding in high-speed and high-power performance. The push for greater frequency performance, higher power densities and reliability have pushed research towards wide-bandgap materials such as Gallium Nitride (GaN) given its superior intrinsic material properties, providing for higher breakdown voltage, and enabling higher power performance. However, GaN faces a fundamental limitation with p-type doping, limiting its adoption in RF power electronics. Attempts at a wide bandgap HBT to-date has exclusively relied on epitaxial growth using metal-organic chemical vapor deposition or molecular beam epitaxy (MBE) to fabricate a GaN-based transistor; however, none have yielded a device with both sufficient current gain and transition frequency - both key measures of performance in a bipolar transistor. Alternative materials for the different HBT layers have been considered but are limited by significant lattice mismatch. To bypass p-type GaN limitations and improve the base-collector junction with minimal interface trap density, a nanomembrane interlayer device transfer is proposed as an alternative for fabrication of an HBT. There are two aims in this dissertation: to demonstrate an experimental HBT with a sufficient current gain above 20 and demonstrate using computer-aided modeling that sufficient frequency performance can be achieved - both to demonstrate that a wide-bandgap HBT is both possible and worth further exploration for RF electronics. In Chapter 1, the landscape of research into wide-bandgap bipolar transistors is presented. In Chapter 2, multiple methods of integration for different diode pairs within the HBT are evaluated for probability of success in the overall device, where a GaAs-GaN base-collector diode is demonstrated to have the best performance using nanomembrane layer transfer. Additionally, an MBE-grown AlGaAs-GaAs film stack was transferred and demonstrated an emitter-base structure can be transferred with no degradation in performance. In Chapter 3, fabrication of the HBT is demonstrated using the best methods selected from Chapter 2, where a AlGaAs-GaAs-GaN HBT was demonstrated to have a current gain greater than 70. In Chapter 4, technology computer-aided design simulations were developed to validate the DC results shown in Chapter 2 and 3, and simulated transition frequencies of at least 60 GHz for the experimental structure fabricated in Chapter 3. Finally, in Chapter 5, next steps are outlined for exploration beyond this initial proof-of-concept device. Taken altogether, this dissertation serves to demonstrate a device structure with the potential to vastly exceed existing solutions that can be applied to a vast array of wide-bandgap materials without being limited by its p-type analogues, enabling performance for a wide array of applications in the next generations of electronics.
Book Synopsis High-Frequency Bipolar Transistors by : Michael Reisch
Download or read book High-Frequency Bipolar Transistors written by Michael Reisch and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.
