High Speed Sige Hbt Bicmos Circuits For Communication And Radar Transceivers

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High-speed SiGe HBT BiCMOS Circuits for Communication and Radar Transceivers

Author : Wei-Min Kuo
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (89 download)

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Book Synopsis High-speed SiGe HBT BiCMOS Circuits for Communication and Radar Transceivers by : Wei-Min Kuo

Download or read book High-speed SiGe HBT BiCMOS Circuits for Communication and Radar Transceivers written by Wei-Min Kuo and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation explores high-speed silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) bipolar complementary metal oxide semiconductor (BiCMOS) circuits for next-generation ground- and space-based millimeter-wave (MMW>= 30 GHz) communication front-ends and X-band (8 to 12 GHz) radar (radio detection and ranging) modules. The requirements of next-generation transceivers, for both radar and communication applications, are low power, small size, light weight, low cost, high performance, and high reliability. For this purpose, the high-speed circuits that satisfy the demanding specifications of next-generation transceivers are implemented in SiGe HBT BiCMOS technology, and the device-circuit interactions of SiGe HBTs to transceiver building blocks for performance optimization and radiation tolerance are investigated. For X-band radar module components, the dissertation covers: (1) The design of an ultra-low-noise X-band SiGe HBT low-noise-amplifier (LNA). (2) The design of low-loss shunt and series/shunt X-band Si CMOS single-pole double-throw (SPDT) switches. (3) The design of a low-power X-band SiGe HBT LNA for near-space radar applications. For MMW communication front-end circuits, the dissertation covers: (4) The design of an inductorless SiGe HBT ring oscillator for MMW operation. (5) The study of emitter scaling and device biasing on MMW SiGe HBT voltage-controlled oscillator (VCO) performance. (6) The study of proton radiation on MMW SiGe HBT transceiver building blocks.

Fabrication of SiGe HBT BiCMOS Technology

Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1351834789
Total Pages : 321 pages
Book Rating : 4.3/5 (518 download)

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Book Synopsis Fabrication of SiGe HBT BiCMOS Technology by : John D. Cressler

Download or read book Fabrication of SiGe HBT BiCMOS Technology written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBT BiCMOS technology is the obvious groundbreaker of the Si heterostructures application space. To date virtually every major player in the communications electronics market either has SiGe up and running in-house or is using someone else’s SiGe fab as foundry for their designers. Key to this success lies in successful integration of the SiGe HBT and Si CMOS, with no loss of performance from either device. Filled with contributions from leading experts, Fabrication of SiGe HBT BiCMOS Technologies brings together a complete discussion of these topics into a single resource. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume examines the design, fabrication, and application of silicon heterostructure transistors. A novel aspect of this book the inclusion of numerous snapshot views of the industrial state-of-the-art for SiGe HBT BiCMOS technology. It has been carefully designed to provide a useful basis of comparison for the current status and future course of the global industry. In addition to the copious technical material and the numerous references contained in each chapter, the book includes easy-to-reference appendices on the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

High-speed Integrated Circuit Technology

Author : Mark J. W. Rodwell
Publisher : World Scientific
ISBN 13 : 9789812810014
Total Pages : 374 pages
Book Rating : 4.8/5 (1 download)

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Book Synopsis High-speed Integrated Circuit Technology by : Mark J. W. Rodwell

Download or read book High-speed Integrated Circuit Technology written by Mark J. W. Rodwell and published by World Scientific. This book was released on 2001 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the state of the art of very high speed digital integrated circuits. Commercial applications are in fiber optic transmission systems operating at 10, 40, and 100 Gb/s, while the military application is ADCs and DACs for microwave radar. The book contains detailed descriptions of the design, fabrication, and performance of wideband Si/SiGe-, GaAs-, and InP-based bipolar transistors. The analysis, design, and performance of high speed CMOS, silicon bipolar, and III-V digital ICs are presented in detail, with emphasis on application in optical fiber transmission and mixed signal ICs. The underlying physics and circuit design of rapid single flux quantum (RSFQ) superconducting logic circuits are reviewed, and there is extensive coverage of recent integrated circuit results in this technology. Contents: Preface (M J W Rodwell); High-Speed and High-Data-Bandwidth Transmitter and Receiver for Multi-Channel Serial Data Communication with CMOS Technology (M Fukaishi et al.); High-Performance Si and SiGe Bipolar Technologies and Circuits (M Wurzer et al.); Self-Aligned Si BJT/SiGe HBT Technology and Its Application to High-Speed Circuits (K Washio); Small-Scale InGaP/GaAs Heterojunction Bipolar Transistors for High-Speed and Low-Power Integrated-Circuit Applications (T Oka et al.); Prospects of InP-Based IC Technologies for 100-Gbit/S-Class Lightwave Communications Systems (T Enoki et al.); Scaling of InGaAs/InAlAs HBTs for High Speed Mixed-Signal and mm-Wave ICs (M J W Rodwell); Progress Toward 100 GHz Logic in InP HBT IC Technology (C H Fields et al.); Cantilevered Base InP DHBT for High Speed Digital Applications (A L Gutierrez-Aitken et al.); RSFQ Technology: Physics and Devices (P Bunyk et al.); RSFQ Technology: Circuits and Systems (D K Brock). Readership: Researchers, industrialists and academics in electrical and electronic engineering.

High-speed Serial Circuits Using SiGe HBT BiCMOS Technology

Author : Ryan Clarke
Publisher :
ISBN 13 :
Total Pages : 380 pages
Book Rating : 4.:/5 (115 download)

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Book Synopsis High-speed Serial Circuits Using SiGe HBT BiCMOS Technology by : Ryan Clarke

Download or read book High-speed Serial Circuits Using SiGe HBT BiCMOS Technology written by Ryan Clarke and published by . This book was released on 2015 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fabrication of SiGe HBT BiCMOS Technology

Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1420066897
Total Pages : 258 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Fabrication of SiGe HBT BiCMOS Technology by : John D. Cressler

Download or read book Fabrication of SiGe HBT BiCMOS Technology written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBT BiCMOS technology is the obvious groundbreaker of the Si heterostructures application space. To date virtually every major player in the communications electronics market either has SiGe up and running in-house or is using someone else’s SiGe fab as foundry for their designers. Key to this success lies in successful integration of the SiGe HBT and Si CMOS, with no loss of performance from either device. Filled with contributions from leading experts, Fabrication of SiGe HBT BiCMOS Technologies brings together a complete discussion of these topics into a single resource. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume examines the design, fabrication, and application of silicon heterostructure transistors. A novel aspect of this book the inclusion of numerous snapshot views of the industrial state-of-the-art for SiGe HBT BiCMOS technology. It has been carefully designed to provide a useful basis of comparison for the current status and future course of the global industry. In addition to the copious technical material and the numerous references contained in each chapter, the book includes easy-to-reference appendices on the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

Design of High-speed SiGe HBT BiCMOS Circuits for Extreme Environment Applications

Author : Ramkumar Krithivasan
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (15 download)

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Book Synopsis Design of High-speed SiGe HBT BiCMOS Circuits for Extreme Environment Applications by : Ramkumar Krithivasan

Download or read book Design of High-speed SiGe HBT BiCMOS Circuits for Extreme Environment Applications written by Ramkumar Krithivasan and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this work is to investigate the suitability of applying silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) bipolar complementary metal oxide semiconductor (BiCMOS) technology to extreme environments and to design high-speed circuits in this technology to demonstrate their reliable operation under these conditions. This research focuses on exploring techniques for hardening SiGe HBT digital logic for single event upset (SEU) based on principles of radiation hardening by design (RHBD) as well as on the cryogenic characterization of SiGe HBTs and designing broadband amplifiers for operation at cryogenic temperatures. Representative circuits ranging from shift registers featuring multiple architectures to broadband analog circuits have been implemented in various generations of this technology to enable this effort.

Design of High-speed Communication Circuits

Author : Ramesh Harjani
Publisher : World Scientific
ISBN 13 : 9812774580
Total Pages : 233 pages
Book Rating : 4.8/5 (127 download)

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Book Synopsis Design of High-speed Communication Circuits by : Ramesh Harjani

Download or read book Design of High-speed Communication Circuits written by Ramesh Harjani and published by World Scientific. This book was released on 2006 with total page 233 pages. Available in PDF, EPUB and Kindle. Book excerpt: MOS technology has rapidly become the de facto standard for mixed-signal integrated circuit design due to the high levels of integration possible as device geometries shrink to nanometer scales. The reduction in feature size means that the number of transistor and clock speeds have increased significantly. In fact, current day microprocessors contain hundreds of millions of transistors operating at multiple gigahertz. Furthermore, this reduction in feature size also has a significant impact on mixed-signal circuits. Due to the higher levels of integration, the majority of ASICs possesses some analog components. It has now become nearly mandatory to integrate both analog and digital circuits on the same substrate due to cost and power constraints. This book presents some of the newer problems and opportunities offered by the small device geometries and the high levels of integration that is now possible. The aim of this book is to summarize some of the most critical aspects of high-speed analog/RF communications circuits. Attention is focused on the impact of scaling, substrate noise, data converters, RF and wireless communication circuits and wireline communication circuits, including high-speed I/O. Contents: Achieving Analog Accuracy in Nanometer CMOS (M P Flynn et al.); Self-Induced Noise in Integrated Circuits (R Gharpurey & S Naraghi); High-Speed Oversampling Analog-to-Digital Converters (A Gharbiya et al.); Designing LC VCOs Using Capacitive Degeneration Techniques (B Jung & R Harjani); Fully Integrated Frequency Synthesizers: A Tutorial (S T Moon et al.); Recent Advances and Design Trends in CMOS Radio Frequency Integrated Circuits (D J Allstot et al.); Equalizers for High-Speed Serial Links (P K Hanumolu et al.); Low-Power, Parallel Interface with Continuous-Time Adaptive Passive Equalizer and Crosstalk Cancellation (C P Yue et al.). Readership: Technologists, scientists, and engineers in the field of high-speed communication circuits. It can also be used as a textbook for graduate and advanced undergraduate courses.

State-of-the-Art of Millimeter-Wave Silicon Technology

Author : Jaco du Preez
Publisher : Springer Nature
ISBN 13 : 3031146557
Total Pages : 165 pages
Book Rating : 4.0/5 (311 download)

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Book Synopsis State-of-the-Art of Millimeter-Wave Silicon Technology by : Jaco du Preez

Download or read book State-of-the-Art of Millimeter-Wave Silicon Technology written by Jaco du Preez and published by Springer Nature. This book was released on 2022-09-20 with total page 165 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book examines the critical differences between current and next-generation Si technologies (CMOS, BiCMOS and SiC) and technology platforms (e.g. system-on-chip) in mm-wave wireless applications. We provide a basic overview of the two technologies from a technical standpoint, followed by a review of the state-of-the-art of several key building blocks in wireless systems. The influences of system requirements on the choice of semiconductor technology are vital to understanding the merits of CMOS and BiCMOS devices – e.g., output power, battery life, adjacent channel interference, cost restrictions, and so forth. These requirements, in turn, affect component-level design and performance metrics of oscillators, mixers, power and low-noise amplifiers, as well as phase-locked loops and data converters. Finally, the book offers a peek into the next generation of wireless technologies such as THz -band systems and future 6G applications.

High-Frequency Integrated Circuits

Author : Sorin Voinigescu
Publisher : Cambridge University Press
ISBN 13 : 110731061X
Total Pages : 921 pages
Book Rating : 4.1/5 (73 download)

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Book Synopsis High-Frequency Integrated Circuits by : Sorin Voinigescu

Download or read book High-Frequency Integrated Circuits written by Sorin Voinigescu and published by Cambridge University Press. This book was released on 2013-02-28 with total page 921 pages. Available in PDF, EPUB and Kindle. Book excerpt: A transistor-level, design-intensive overview of high speed and high frequency monolithic integrated circuits for wireless and broadband systems from 2 GHz to 200 GHz, this comprehensive text covers high-speed, RF, mm-wave and optical fiber circuits using nanoscale CMOS, SiGe BiCMOS and III-V technologies. Step-by-step design methodologies, end-of-chapter problems and practical simulation and design projects are provided, making this an ideal resource for senior undergraduate and graduate courses in circuit design. With an emphasis on device-circuit topology interaction and optimization, it gives circuit designers and students alike an in-depth understanding of device structures and process limitations affecting circuit performance.

Scaling And Integration Of High-speed Electronics And Optomechanical Systems

Author : Magnus Willander
Publisher : World Scientific
ISBN 13 : 9813225416
Total Pages : 150 pages
Book Rating : 4.8/5 (132 download)

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Book Synopsis Scaling And Integration Of High-speed Electronics And Optomechanical Systems by : Magnus Willander

Download or read book Scaling And Integration Of High-speed Electronics And Optomechanical Systems written by Magnus Willander and published by World Scientific. This book was released on 2017-04-17 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt: Coined as the third revolution in electronics is under way; Manufacturing is going digital, driven by computing revolution, powered by MOS technology, in particular, by the CMOS technology and its development.In this book, the scaling challenges for CMOS: SiGe BiCMOS, THz and niche technology are covered; the first article looks at scaling challenges for CMOS from an industrial point of view (review of the latest innovations); the second article focuses on SiGe BiCMOS technologies (deals with high-speed up to the THz-region), and the third article reports on circuits associated with source/drain integration in 14 nm and beyond FinFET technology nodes. Followed by the last two articles on niche applications for emerging technologies: one deals with carbon nanotube network and plasmonics for the THz region carbon, while the other reviews the recent developments in integrated on-chip nano-optomechanical systems.

Silicon Heterostructure Handbook

Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1420026585
Total Pages : 1248 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Silicon Heterostructure Handbook by : John D. Cressler

Download or read book Silicon Heterostructure Handbook written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 1248 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.

Silicon Germanium

Author : Raminderpal Singh
Publisher : John Wiley & Sons
ISBN 13 : 0471660914
Total Pages : 368 pages
Book Rating : 4.4/5 (716 download)

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Book Synopsis Silicon Germanium by : Raminderpal Singh

Download or read book Silicon Germanium written by Raminderpal Singh and published by John Wiley & Sons. This book was released on 2004-03-15 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: "An excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications." -Ron Wilson, EETimes "SiGe technology has demonstrated the ability to provide excellent high-performance characteristics with very low noise, at high power gain, and with excellent linearity. This book is a comprehensive review of the technology and of the design methods that go with it." -Alberto Sangiovanni-Vincentelli Professor, University of California, Berkeley Cofounder, Chief Technology Officer, Member of Board Cadence Design Systems Inc. Filled with in-depth insights and expert advice, Silicon Germanium covers all the key aspects of this technology and its applications. Beginning with a brief introduction to and historical perspective of IBM's SiGe technology, this comprehensive guide quickly moves on to: * Detail many of IBM's SiGe technology development programs * Explore IBM's approach to device modeling and characterization-including predictive TCAD modeling * Discuss IBM's design automation and signal integrity knowledge and implementation methodologies * Illustrate design applications in a variety of IBM's SiGe technologies * Highlight details of highly integrated SiGe BiCMOS system-on-chip (SOC) design Written for RF/analog and mixed-signal designers, CAD designers, semiconductor students, and foundry process engineers worldwide, Silicon Germanium provides detailed insight into the modeling and design automation requirements for leading-edge RF/analog and mixed-signal products, and illustrates in-depth applications that can be implemented using IBM's advanced SiGe process technologies and design kits. "This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure-the process development, device modeling, and tool development." -Ron Wilson Silicon Engineering Editor, EETimes "This book chronicles the development of SiGe in detail, provides an in-depth look at the modeling and design automation requirements for making advanced applications using SiGe possible, and illustrates such applications as implemented using IBM's process technologies and design methods." -John Kelly Senior Vice President and Group Executive, Technology Group, IBM

Design, Test and Interface of CMOS and BiCmos Opto-electronic Transceivers

Author : Amitava Bhaduri
Publisher :
ISBN 13 :
Total Pages : 214 pages
Book Rating : 4.:/5 (513 download)

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Book Synopsis Design, Test and Interface of CMOS and BiCmos Opto-electronic Transceivers by : Amitava Bhaduri

Download or read book Design, Test and Interface of CMOS and BiCmos Opto-electronic Transceivers written by Amitava Bhaduri and published by . This book was released on 2002 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications

Author : Niccolò Rinaldi
Publisher : CRC Press
ISBN 13 : 1000794407
Total Pages : 377 pages
Book Rating : 4.0/5 (7 download)

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Book Synopsis Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications by : Niccolò Rinaldi

Download or read book Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications written by Niccolò Rinaldi and published by CRC Press. This book was released on 2022-09-01 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becomingan ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000’s.Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration.Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.

SiGe, Ge, and Related Compounds 6: Materials, Processing, and Devices

Author : D. Harame
Publisher : The Electrochemical Society
ISBN 13 : 1607685434
Total Pages : 1042 pages
Book Rating : 4.6/5 (76 download)

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Book Synopsis SiGe, Ge, and Related Compounds 6: Materials, Processing, and Devices by : D. Harame

Download or read book SiGe, Ge, and Related Compounds 6: Materials, Processing, and Devices written by D. Harame and published by The Electrochemical Society. This book was released on with total page 1042 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Low-voltage and Low-power Silicon Germanium BiCMOS Topologies for 80-100 Gigabit-per-second Serial Communication

Author : Timothy Osborne Dickson
Publisher :
ISBN 13 : 9780494279403
Total Pages : 398 pages
Book Rating : 4.2/5 (794 download)

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Book Synopsis Low-voltage and Low-power Silicon Germanium BiCMOS Topologies for 80-100 Gigabit-per-second Serial Communication by : Timothy Osborne Dickson

Download or read book Low-voltage and Low-power Silicon Germanium BiCMOS Topologies for 80-100 Gigabit-per-second Serial Communication written by Timothy Osborne Dickson and published by . This book was released on 2007 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt: The new concepts presented in this thesis enable the design of highly-integrated broadband circuits in a 130-nm SiGe BiCMOS technology with 150-GHz fT SiGe HBT. The first single-chip pseudo-random binary sequence generator with a pattern length of 231 - 1 is reported and achieves a maximum output data rate of 80 Gb/s. Additionally, the first 86-Gb/s serial transmitter is presented, which operates from a 2.5-V supply voltage and consumes less power (1.36 W) than any 40-Gb/s serial transmitter reported to date. This thesis focuses on new design challenges which arise in the design of next-generation wireline circuits operating at data rates of 80--100 Gb/s. Methodologies for low-power high-speed logic are described. A new low-voltage BiCMOS current-mode logic family is introduced, which allows for more than a 20% reduction in power consumption in high-speed building blocks. This logic family, based on a MOS-HBT cascode topology with common-source nMOS and common-base SiGe HBT, takes full advantage of the best features of both devices to achieve low-voltage, high-speed operation. Algorithmic design methodologies for MOS and BiCMOS high-speed logic circuits are presented based on the invariance of characteristic current densities in nanoscale MOSFETs, resulting in robust designs which can be ported between foundries and even across technology nodes. Further reduction in building block power consumption can be achieved by trading of bias current for inductive peaking. For the first time, monolithic spiral inductors and transformers are demonstrated for use at mm-wave frequencies. Broadband inductor models along with a model extraction methodology based on measured or simulated y-parameters is described for the first time. Low-noise broadband input stages are compared theoretically and experimentally to determine the best topology to improve sensitivity in Ethernet or backplane receivers. It is proven that the transimpedance input stage yields the best noise performance, highest bandwidth, best input matching, and lowest power consumption than more conventional emitter-follower-inverter or Cherry-Hooper input stages, making it an ideal topology for use in broadband receivers.

Implementation of Multiple HBT Variants in 0.18 Micron Silicon Germanide BiCMOS Technology

Author : Rebecca Shun Ying Au
Publisher :
ISBN 13 : 9780494404270
Total Pages : 178 pages
Book Rating : 4.4/5 (42 download)

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Book Synopsis Implementation of Multiple HBT Variants in 0.18 Micron Silicon Germanide BiCMOS Technology by : Rebecca Shun Ying Au

Download or read book Implementation of Multiple HBT Variants in 0.18 Micron Silicon Germanide BiCMOS Technology written by Rebecca Shun Ying Au and published by . This book was released on 2006 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt: The SiGe BiCMOS technology is the cost-effective solution for high-speed communications applications due to its RF/analog properties and CMOS compatibility. The main challenge with the optimization of SiGe HBT is to achieve both high speed and high breakdown performance simultaneously. This thesis investigates the optimization of the collector profile to attain multiple variants of SiGe HBTs, namely high speed, standard and high voltage devices, in one BiCMOS technology. Using process and device simulations, the device performance is enhanced by base and collector profile optimization to minimize base transit time and collector delay. Variants of SiGe HBTs with multiple cutoff frequencies and breakdown voltages are achieved by proper choice of collector doping concentration using selectively-implanted collectors (SIC). Three SiGe npn transistors with fT/BVCEO values of 80GHz/2V, 60GHz/2.9V and 40GHz/4.8V are successfully fabricated in standard 0.18 mum CMOS technology by an industrial foundry, with minimal extra process complexity.