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High Performance Indium Phosphide Based Electronic Devices Grown By Chemical Beam Epitaxy
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Book Synopsis High Performance Indium Phosphide Based Electronic Devices Grown by Chemical Beam Epitaxy by : Gordon Orvis Munns
Download or read book High Performance Indium Phosphide Based Electronic Devices Grown by Chemical Beam Epitaxy written by Gordon Orvis Munns and published by . This book was released on 1996 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Development of Metalorganic Molecular Beam Epitaxy for the Growth of Indium(0.53) Gallium(0.47) Arsenic/indium Phosphide Heterojunction Bipolar Transistors and Quantum Well Optoelectronic Devices by : Steven Lee Jackson
Download or read book Development of Metalorganic Molecular Beam Epitaxy for the Growth of Indium(0.53) Gallium(0.47) Arsenic/indium Phosphide Heterojunction Bipolar Transistors and Quantum Well Optoelectronic Devices written by Steven Lee Jackson and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Metalorganic molecular beam epitaxy (MOMBE) offers several potential advantages over molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) for the development of high-speed/reliability C-doped In$\rm\sb{0.53}Ga\sb{0.47}$As/InP heterojunction bipolar transistors (HBTs). Improvements in reproducibility of alloy composition and layer thickness for $\rm In\sb xGa\sb{1-x}As$ and InP, which are afforded by MOMBE relative to MBE, offer clear advantages for manufacturing. The potential for reduction of the H passivation of C acceptors and substrate temperature sensitivity of the alloy composition, using CCl$\sb4$ as the C source, offers advantages relative to MOCVD. However, the lack of an efficient gaseous n-type dopant source limits the potential for scalability of MOMBE. This thesis describes recent work on the development of MOMBE for the growth of C-doped $\rm In\sb{0.53}Ga\sb{0.47}As/InP$ HBTs. Issues relevant to obtaining abrupt heterointerfaces, the development of a new gaseous Si dopant source, SiBr$\sb4$, and the sources of H passivation of C acceptors in C-doped $\rm In\sb{0.53}Ga\sb{0.47}As$ have been investigated. The use of a common Ta-baffled hydride cracker for the dissociation of AsH$\sb3$ and PH$\sb3$ at 950$\sp\circ$C was found to result in the generation of As$\sb2$, P$\sb2$, and H$\sb2$. However, severe group V memory effects were observed for P and As. Significantly faster switching was obtained, by using separate open Ta tube crackers. Single and multiple quantum well $\rm In\sb{0.53}Ga\sb{0.47}As/InP$ heterostructures containing quantum wells as narrow as 10 A exhibit intense photoluminescence and ninth order satellite peaks in resolution x-ray diffraction rocking curves. SiBr$\sb4$ has been demonstrated as an extremely efficient gaseous Si doping source which is compatible with MOMBE. Net electron concentrations of n = $\rm2.3\times10\sp{20}\ cm\sp{-3}$ have been obtained in InP grown at 450$\sp\circ$C without morphology degradation. Specific contact resistances of $\rm\rho\sb c=6\times10\sp{-8}\ \Omega$-cm$\sp{2}$ have been obtained by using nonalloyed Ti/Pt/Au contacts directly to these heavily-doped InP layers. $\rm In\sb{0.53}Ga\sb{0.47}As/InP$ HBTs using InP contact layers with comparably low specific contact resistances have been demonstrated. A blue shift in the photoluminescence peak energy of approximately 265 meV is observed for InP layers doped to n = $\rm7\times10\sp{19}\ cm\sp{-3}.$ Carbon doping of $\rm In\sb{0.53}Ga\sb{0.47}As$ in gas source molecular beam epitaxy and MOMBE using CCl$\sb4$ has been investigated. Net hole concentrations of p = $\rm1.8\times10\sp{20}\ cm\sp{-3}$ have been obtained with negligible H passivation for hole concentrations as high as p = $\rm8\times10\sp{19}\ cm\sp{-3}$. The degree of H passivation was found to be highly dependent on the AsH$\sb3$ cracking temperature with an enhanced effect at substrate temperatures ${
Book Synopsis First International Conference on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices by : Rajendra Singh
Download or read book First International Conference on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices written by Rajendra Singh and published by . This book was released on 1989 with total page 672 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Chemical Beam Epitaxial Growth of Indium Phosphide Using Alternative, Safer Phosphorus Sources by : Chungwoo Kim
Download or read book Chemical Beam Epitaxial Growth of Indium Phosphide Using Alternative, Safer Phosphorus Sources written by Chungwoo Kim and published by . This book was released on 1995 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis THE APPLICATION OF CHEMICAL BEAM EPITAXY TO INDIUM PHOSPHIDE BASED MATERIALS AND DEVICES (INDIUM PHOSPHIDE). by : MARC EISENZWEIG SHERWIN
Download or read book THE APPLICATION OF CHEMICAL BEAM EPITAXY TO INDIUM PHOSPHIDE BASED MATERIALS AND DEVICES (INDIUM PHOSPHIDE). written by MARC EISENZWEIG SHERWIN and published by . This book was released on 1992 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: TriMethylAmine Alane (TMAA), showed acceptable levels of carbon and oxygen, validating the usefulness of the novel TMAA precursor.
Book Synopsis Optoelectronic Integrated Circuit Design and Device Modeling by : Jianjun Gao
Download or read book Optoelectronic Integrated Circuit Design and Device Modeling written by Jianjun Gao and published by John Wiley & Sons. This book was released on 2011-09-19 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: In Optoelectronic Integrated Circuit Design and Device Modeling, Professor Jianjun Gao introduces the fundamentals and modeling techniques of optoelectronic devices used in high-speed optical transmission systems. Gao covers electronic circuit elements such as FET, HBT, MOSFET, as well as design techniques for advanced optical transmitter and receiver front-end circuits. The book includes an overview of optical communication systems and computer-aided optoelectronic IC design before going over the basic concept of laser diodes. This is followed by modeling and parameter extraction techniques of lasers and photodiodes. Gao covers high-speed electronic semiconductor devices, optical transmitter design, and optical receiver design in the final three chapters. Addresses a gap within the rapidly growing area of transmitter and receiver modeling in OEICs Explains diode physics before device modeling, helping readers understand their equivalent circuit models Provides comprehensive explanations for E/O and O/E conversions done with laser and photodiodes Covers an extensive range of devices for high-speed applications Accessible for students new to microwaves Presentation slides available for instructor use This book is primarily aimed at practicing engineers, researchers, and post-graduates in the areas of RF, microwaves, IC design, photonics and lasers, and solid state devices. The book is also a strong supplement for senior undergraduates taking courses in RF and microwaves. Lecture materials for instructors available at www.wiley.com/go/gao
Book Synopsis Investigation of Solution Epitaxial Growth and High-Field Electronic Properties of Indium Phosphide by : Lester F. Eastman
Download or read book Investigation of Solution Epitaxial Growth and High-Field Electronic Properties of Indium Phosphide written by Lester F. Eastman and published by . This book was released on 1975 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: This investigation covers an effort directed at the problem of obtaining Indium phosphide, by liquid phase epitaxy, for use in high-electric-field applications such as in microwave electron devices. It covers the area of determining the growth rate, the area of obtaining high purity, the area of alloyed contacts, and the determination of high-field properties. It is concluded that multiple-layer InP can be grown predictably and repeatably by liquid phase epitaxy using a multiple-well boat with the substrate on the bottom of the melt. It is also concluded that the density of total ionized impurities is the major remaining problem preventing the use of liquid phase epitaxial InP in microwave device applications. It also appears that carbon, as well as silicon, may contribute substantially to this impurity density.
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 1904 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Research in Progress written by and published by . This book was released on 1978 with total page 834 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Minerals Yearbook written by and published by . This book was released on 1994 with total page 998 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Minerals Yearbook by : United States. Bureau of Mines
Download or read book Minerals Yearbook written by United States. Bureau of Mines and published by . This book was released on 1994 with total page 988 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis International Conference on Indium Phosphide and Related Materials by :
Download or read book International Conference on Indium Phosphide and Related Materials written by and published by . This book was released on 2000 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Second International Conference, Indium Phosphide and Related Materials, April 23-25, 1990, Radisson Hotel Denver, Denver, Colorado by :
Download or read book Second International Conference, Indium Phosphide and Related Materials, April 23-25, 1990, Radisson Hotel Denver, Denver, Colorado written by and published by . This book was released on 1990 with total page 474 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Signal written by and published by . This book was released on 1990 with total page 1010 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book MEMS written by Mohamed Gad-el-Hak and published by CRC Press. This book was released on 2005-11-29 with total page 678 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thoroughly revised and updated, the new edition of the best-selling MEMS Handbook is now presented as a three-volume set that offers state-of-the-art coverage of microelectromechanical systems. Through chapters contributed by top experts and pioneers in the field, MEMS: Design and Fabrication presents a comprehensive look at the materials, procedures, tools, and techniques of MEMS fabrication. New chapters in this edition examine the materials and fabrication of polymer microsystems and optical diagnostics for investigating the entrance length in microchannels. Rigorous yet accessible, this volume provides the practical knowledge needed for work in cutting-edge MEMS applications.