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High Frequency Algan Gan Hemts Fabrication And Noise Characterization
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Book Synopsis High-frequency AlGaN/GaN HEMTs Fabrication and Noise Characterization by : Alexei Vasilievich Vertiatchikh
Download or read book High-frequency AlGaN/GaN HEMTs Fabrication and Noise Characterization written by Alexei Vasilievich Vertiatchikh and published by . This book was released on 2004 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance by : Robert F Davis
Download or read book Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance written by Robert F Davis and published by World Scientific. This book was released on 2004-05-07 with total page 295 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
Book Synopsis Wide Bandgap Based Devices by : Farid Medjdoub
Download or read book Wide Bandgap Based Devices written by Farid Medjdoub and published by MDPI. This book was released on 2021-05-26 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices
Book Synopsis Handbook for III-V High Electron Mobility Transistor Technologies by : D. Nirmal
Download or read book Handbook for III-V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Book Synopsis Microelectronics, Circuits and Systems by : Abhijit Biswas
Download or read book Microelectronics, Circuits and Systems written by Abhijit Biswas and published by Springer Nature. This book was released on 2023-06-26 with total page 568 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the proceedings of the 8th International Conference on Microelectronics, Circuits, and Systems (Micro2021) having design and developments of devices, micro- and nanotechnologies, and electronic appliances. This book includes the latest developments and emerging research topics in material sciences, devices, microelectronics, circuits, nanotechnology, system design and testing, simulation, sensors, photovoltaics, optoelectronics, and its different applications. This book is of great attraction to researchers and professionals working in electronics, microelectronics, electrical, and computer engineering.
Book Synopsis Handbook for III-V High Electron Mobility Transistor Technologies by : D. Nirmal
Download or read book Handbook for III-V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Book Synopsis GaN-based Materials and Devices by : Michael Shur
Download or read book GaN-based Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2004 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
Book Synopsis Power GaN Devices by : Matteo Meneghini
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Book Synopsis Nitride Semiconductor Devices by : Joachim Piprek
Download or read book Nitride Semiconductor Devices written by Joachim Piprek and published by John Wiley & Sons. This book was released on 2007-04-09 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium nitride and its related compounds enable the fabrication of highly efficient light-emitting diodes and lasers for a broad spectrum of wavelengths, ranging from red through yellow and green to blue and ultraviolet. Since the breakthrough demonstration of blue laser diodes by Shuji Nakamura in 1995, this field has experienced tremendous growth worldwide. Various applications can be seen in our everyday life, from green traffic lights to full-color outdoor displays to high-definition DVD players. In recent years, nitride device modeling and simulation has gained importance and advanced software tools are emerging. Similar developments occurred in the past with other semiconductors such as silicon, where computer simulation is now an integral part of device development and fabrication. This book presents a review of modern device concepts and models, written by leading researchers in the field. It is intended for scientists and device engineers who are interested in employing computer simulation for nitride device design and analysis.
Book Synopsis Microwave Circuit Design Using Linear and Nonlinear Techniques by : George D. Vendelin
Download or read book Microwave Circuit Design Using Linear and Nonlinear Techniques written by George D. Vendelin and published by John Wiley & Sons. This book was released on 2005-10-03 with total page 1080 pages. Available in PDF, EPUB and Kindle. Book excerpt: The ultimate handbook on microwave circuit design with CAD. Full of tips and insights from seasoned industry veterans, Microwave Circuit Design offers practical, proven advice on improving the design quality of microwave passive and active circuits-while cutting costs and time. Covering all levels of microwave circuit design from the elementary to the very advanced, the book systematically presents computer-aided methods for linear and nonlinear designs used in the design and manufacture of microwave amplifiers, oscillators, and mixers. Using the newest CAD tools, the book shows how to design transistor and diode circuits, and also details CAD's usefulness in microwave integrated circuit (MIC) and monolithic microwave integrated circuit (MMIC) technology. Applications of nonlinear SPICE programs, now available for microwave CAD, are described. State-of-the-art coverage includes microwave transistors (HEMTs, MODFETs, MESFETs, HBTs, and more), high-power amplifier design, oscillator design including feedback topologies, phase noise and examples, and more. The techniques presented are illustrated with several MMIC designs, including a wideband amplifier, a low-noise amplifier, and an MMIC mixer. This unique, one-stop handbook also features a major case study of an actual anticollision radar transceiver, which is compared in detail against CAD predictions; examples of actual circuit designs with photographs of completed circuits; and tables of design formulae.
Book Synopsis Advances in Energy and Control Systems by : Afzal Sikander
Download or read book Advances in Energy and Control Systems written by Afzal Sikander and published by Springer Nature. This book was released on with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Failure Analysis written by Marius Bazu and published by John Wiley & Sons. This book was released on 2011-03-08 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Failure analysis is the preferred method to investigate product or process reliability and to ensure optimum performance of electrical components and systems. The physics-of-failure approach is the only internationally accepted solution for continuously improving the reliability of materials, devices and processes. The models have been developed from the physical and chemical phenomena that are responsible for degradation or failure of electronic components and materials and now replace popular distribution models for failure mechanisms such as Weibull or lognormal. Reliability engineers need practical orientation around the complex procedures involved in failure analysis. This guide acts as a tool for all advanced techniques, their benefits and vital aspects of their use in a reliability programme. Using twelve complex case studies, the authors explain why failure analysis should be used with electronic components, when implementation is appropriate and methods for its successful use. Inside you will find detailed coverage on: a synergistic approach to failure modes and mechanisms, along with reliability physics and the failure analysis of materials, emphasizing the vital importance of cooperation between a product development team involved the reasons why failure analysis is an important tool for improving yield and reliability by corrective actions the design stage, highlighting the ‘concurrent engineering' approach and DfR (Design for Reliability) failure analysis during fabrication, covering reliability monitoring, process monitors and package reliability reliability resting after fabrication, including reliability assessment at this stage and corrective actions a large variety of methods, such as electrical methods, thermal methods, optical methods, electron microscopy, mechanical methods, X-Ray methods, spectroscopic, acoustical, and laser methods new challenges in reliability testing, such as its use in microsystems and nanostructures This practical yet comprehensive reference is useful for manufacturers and engineers involved in the design, fabrication and testing of electronic components, devices, ICs and electronic systems, as well as for users of components in complex systems wanting to discover the roots of the reliability flaws for their products.
Book Synopsis Electrical and Electronic Devices, Circuits, and Materials by : Suman Lata Tripathi
Download or read book Electrical and Electronic Devices, Circuits, and Materials written by Suman Lata Tripathi and published by John Wiley & Sons. This book was released on 2021-03-24 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: The increasing demand for electronic devices for private and industrial purposes lead designers and researchers to explore new electronic devices and circuits that can perform several tasks efficiently with low IC area and low power consumption. In addition, the increasing demand for portable devices intensifies the call from industry to design sensor elements, an efficient storage cell, and large capacity memory elements. Several industry-related issues have also forced a redesign of basic electronic components for certain specific applications. The researchers, designers, and students working in the area of electronic devices, circuits, and materials sometimesneed standard examples with certain specifications. This breakthrough work presents this knowledge of standard electronic device and circuit design analysis, including advanced technologies and materials. This outstanding new volume presents the basic concepts and fundamentals behind devices, circuits, and systems. It is a valuable reference for the veteran engineer and a learning tool for the student, the practicing engineer, or an engineer from another field crossing over into electrical engineering. It is a must-have for any library.
Book Synopsis Advanced Gate Stacks for High-Mobility Semiconductors by : Athanasios Dimoulas
Download or read book Advanced Gate Stacks for High-Mobility Semiconductors written by Athanasios Dimoulas and published by Springer Science & Business Media. This book was released on 2008-01-01 with total page 397 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
Book Synopsis Ohmic Contacts to Semiconductors by : Electrochemical Society
Download or read book Ohmic Contacts to Semiconductors written by Electrochemical Society and published by . This book was released on 1969 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Compound Semiconductors 2001 by : Y Arakawa
Download or read book Compound Semiconductors 2001 written by Y Arakawa and published by CRC Press. This book was released on 2002-09-30 with total page 888 pages. Available in PDF, EPUB and Kindle. Book excerpt: An international perspective on recent research, Compound Semiconductors 2001 provides an overview of important developments in III-V compound semiconductors, such as GaAs, InP, and GaN; II-VI compounds, such as ZnSe and CdTe; and IV-IV compounds, such as SiC and SiGe. The book contains 139 papers arranged in chapters on electronic devices, optical
Book Synopsis State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50) -and- Processes at the Semiconductor Solution Interface 3 by : A. G. Baca
Download or read book State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50) -and- Processes at the Semiconductor Solution Interface 3 written by A. G. Baca and published by The Electrochemical Society. This book was released on 2009-05 with total page 447 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions contain the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and other related topics, as well as the most recent developments in processes at the semiconductor/solution interface including etching, oxidation, passivation, film growth, electrochemical and photoelectrochemical processes, electroluminescence, photoluminescence, and other related topics.
