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Author : Michael James Werner
Publisher :
ISBN 13 :
Total Pages : 514 pages
Book Rating : 4.:/5 (7 download)
Download or read book Heterostructure Bipolar Transistors by Molecular Beam Epitaxy written by Michael James Werner and published by . This book was released on 1988 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : B. Khamsehpour
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (643 download)
Download or read book Heterojunction Bipolar Transistors by Molecular Beam Epitaxy written by B. Khamsehpour and published by . This book was released on 1987 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Bruce Robert Hancock
Publisher :
ISBN 13 :
Total Pages : 182 pages
Book Rating : 4.:/5 (819 download)
Download or read book Development of Inverted (Al,Ga) as Heterojunction Bipolar Transistors by Molecular Beam Epitaxy written by Bruce Robert Hancock and published by . This book was released on 1985 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Taeyoung Won
Publisher :
ISBN 13 :
Total Pages : 284 pages
Book Rating : 4.:/5 (214 download)
Download or read book An Investigation of Heterojunction Bipolar Transistors by Molecular Beam Epitaxy written by Taeyoung Won and published by . This book was released on 1989 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Described in this thesis are the growth, characterization, and modeling of heterojunction bipolar transistors (HBTs). The superior high current handling capacity and high operation frequency of heterojunction bipolar transistors have attracted a great deal of interest in millimeter-wave and high-speed digital applications. This thesis details the performance of InAlAs/InGaAs and AlGaAs/GaAs-on-Si HBTs investigated with state-of-the-art results. Carrier transport across the heterointerface, the current conduction mechanism in the base, and related device parameters of the experimental results are emphasized. A theoretical model that relates output characteristics of heterojunction bipolar transistors to the device structure and material properties is developed and presented with an introduction of the junction velocity concept across the heterointerface. A fairly close agreement between experimental results and theoretical calculation of output characteristics is demonstrated. The InAlAs/InGaAs and AlGaAs/GaAs-on-Si heterojunction bipolar transistors exhibited excellent device performance with the best dc current gains, in MBE grown devices, for both n-p-n and p-n-p structures to date. These results indicate the potential of heterojunction bipolar transistors in realizing high-speed, high-power microwave and millimeter-wave integrated circuits and fast digital switching circuits.
Author : Chi-chih Liao
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (774 download)
Download or read book Antimonide-based Field-effect Transistors and Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy written by Chi-chih Liao and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: For the development of novel high-speed devices, the epitaxial growth of antimonide-based compounds and devices, including field effect transistors (FETs) and hetero-junction bipolar transistors (HBTs), was explored using gas-source molecular beam epitaxy (MBE). The first and second parts of the dissertation detail the growth of InAsSb and InGaSb as the channel materials for n- and p-type FETs, respectively. Both compounds were grown metamorphically on InP substrates with a composite AlSb/AlAs0.5Sb0.5 buffer layer, which was proved to be effective in enhancing the epitaxial quality. By optimizing the growth conditions, the intrinsic carrier mobilities of n-type InAsSb and p-type pseudomorphic InGaSb quantum wells could reach 18000 and 600 cm2/V-s at room temperature, respectively. InAsSb FET showed a high transconductance of 350 mS/mm, which indicated the high potential in the high-speed applications. The third part of the dissertation describes the modification of the emitter-base junction of ultra-fast type-II GaAsSb-based HBTs in order to eliminate the carrier blocking and enhance the current gain. InAlP was used to replace the InP emitter and form a type-I emitter-base junction. Results for large devices show that this modification could improve DC current gain from 80 to 120. The results indicate that type-I/II InAlP/GaAsSb HBTs are promising to achieve better radio-frequency (RF) performance with higher current driving capability.
Author : Ludwig Treitinger
Publisher : Springer Science & Business Media
ISBN 13 : 3642743609
Total Pages : 171 pages
Book Rating : 4.6/5 (427 download)
Download or read book Ultra-Fast Silicon Bipolar Technology written by Ludwig Treitinger and published by Springer Science & Business Media. This book was released on 2013-03-13 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. The strong world wide competition in fabricating metal-oxide-semiconductor field-effect of develop transistor (MOSFET) memories has accelerated the pace ments in semiconductor technology. Bipolar transistors play a major role due to their high-speed performance. Delay times of about 20 ps per gate have already been achieved. Because of this rapid technologi cal progress, it is difficult to predict the future with any certainty. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference. Its aim was to sum marize the most recent developments and to discuss the future of bip olar transistors. This book is based on that session but also includes contributions by other participants, such that a broad range of up-to is presented. Several conclusions can be drawn from date information this information: the first and most important is the very large poten tial for future progress still existing in this field. This progress is char acterized by the drive towards higher speed and lower power con sumption required for complex single-chip systems, as well as by sev eral concrete technological implementations for fulfilling these dem is that a large part of this potential can be ands. The second conclusion realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication.
Author : M. F. Chang
Publisher : World Scientific
ISBN 13 : 9789810220976
Total Pages : 448 pages
Book Rating : 4.2/5 (29 download)
Download or read book Current Trends in Heterojunction Bipolar Transistors written by M. F. Chang and published by World Scientific. This book was released on 1996 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
Author : Hao-Chung Kuo
Publisher :
ISBN 13 :
Total Pages : 190 pages
Book Rating : 4.:/5 (436 download)
Download or read book InP/InGaAs Heterojunction Bipolar Transistors and Field Effect Transistors Grown by Gas-source Molecular Beam Epitaxy written by Hao-Chung Kuo and published by . This book was released on 1999 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Dennis W. Scott
Publisher :
ISBN 13 : 9781303426995
Total Pages : 137 pages
Book Rating : 4.4/5 (269 download)
Download or read book Indium Phosphide Heterojunction Bipolar Transistors with Emitter Regrowth by Molecular Beam Epitaxy written by Dennis W. Scott and published by . This book was released on 2013 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first small-area regrown emitter InP HBT with emitter contact area wider than the 0.7 x 8 μm2 base-emitter junction demonstrated 160 GHz peak fô and simultaneous 140 GHz fmax. Further studies into the base-collector template surface preparation process produced an improved regrowth surface with near-epitaxial smoothness. A simplified, abrupt InP emitter regrowth onto this surface produces regrowth similar to what is observed for growth onto epi-ready InP substrates. The improved regrown emitter HBT with 0.7 x 8 μm2 InP emitter area is used to demonstrate a simultaneous 183 GHz fô and 165 GHz fmax.
Author : Steven Lee Jackson
Publisher :
ISBN 13 :
Total Pages : 188 pages
Book Rating : 4.:/5 (33 download)
Download or read book Development of Metalorganic Molecular Beam Epitaxy for the Growth of In0̳.̳5̳3̳Ga0̳.̳4̳7̳As/InP Heterojunction Bipolar Transistors and Quantum Well Optoelectronic Devices written by Steven Lee Jackson and published by . This book was released on 1994 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Pui Leng Lam
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (643 download)
Download or read book InGaAs-InAIAs N-P-N Double Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy written by Pui Leng Lam and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Wai Lee
Publisher :
ISBN 13 :
Total Pages : 316 pages
Book Rating : 4.:/5 (151 download)
Download or read book The Fabrication of InGaAs/InAlAs/InP Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy written by Wai Lee and published by . This book was released on 1986 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : G. I. Hobson
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (643 download)
Download or read book Molecular Beam Epitaxial Growth of GaAs and GaAsySb1-y for Heterojunction Bipolar Transistors written by G. I. Hobson and published by . This book was released on 1990 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Wei Li
Publisher :
ISBN 13 :
Total Pages : 432 pages
Book Rating : 4.:/5 (441 download)
Download or read book Material and Device Studies for the Development of Gallium Nitride Heterojunction Bipolar Transistors by Molecular Beam Epitaxy written by Wei Li and published by . This book was released on 2008 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: Due to its unique physical properties, gallium nitride (GaN) is under intense investigation for the development of transistors for high power, high frequency and high temperature applications. The majority of existing literature addresses field effect transistors. This dissertation addresses a wide spectrum of materials and device studies required for the development of GaN-based heterojunction bipolar transistors (HBTs). The investigated structure has the emitter region based on n-Al x Ga 1-x N alloys, while the base and collector were based on p-In y Ga 1-y N and n-GaN, respectively. The growth and doping of the various layers of the transistor structure, on sapphire substrate, GaN-templates and free standing GaN substrates are addressed. Particular emphasis was placed on the p-type doping of the AlGaN and InGaN alloys with magnesium, both doping of bulk films as well as superlattices. The experimental results were compared with theoretical predictions of a self-consistent solution to the one-dimensional poisson and schrodinger equations. A hole concentration for p-InGaN of 9x10 18 CM -3 was obtained, which is the highest value published. The device aspect of this research addressed issues related to the development of novel methods of selective growth by molecular beam epitaxy (MBE) of the emitter onto the base. This was found to be necessary to avoid damage of the base during mesa etching. The final product of this research was the fabrication and DC characterization of HBT devices. This included various lithography, metallization, etching and annealing steps. The devices were evaluated under common base and common emitter configurations and the best result obtained was a room temperature gain of 59.
Author : Nein-Yi Li
Publisher :
ISBN 13 :
Total Pages : 446 pages
Book Rating : 4.:/5 (318 download)
Download or read book Chemical Beam Epitaxial Regrowth, Etching, and Doping of III-V Compounds Using Novel Gas Sources for Applications of Heterojunction Bipolar Transistors written by Nein-Yi Li and published by . This book was released on 1997 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : John Orton
Publisher : OUP Oxford
ISBN 13 : 0191061166
Total Pages : 529 pages
Book Rating : 4.1/5 (91 download)
Download or read book Molecular Beam Epitaxy written by John Orton and published by OUP Oxford. This book was released on 2015-06-25 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early âhome-madeâ variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called âlow-dimensional structuresâ (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
Author :
Publisher :
ISBN 13 :
Total Pages : 87 pages
Book Rating : 4.:/5 (266 download)
Download or read book Альманах цеха поетов written by and published by . This book was released on 1921 with total page 87 pages. Available in PDF, EPUB and Kindle. Book excerpt:
