Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Download Hafnium Oxide Gate Dielectrics For Deeply Scaled Mosfets full books in PDF, epub, and Kindle. Read online Hafnium Oxide Gate Dielectrics For Deeply Scaled Mosfets ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Author : Zhihong Zhang
Publisher :
ISBN 13 :
Total Pages : 378 pages
Book Rating : 4.:/5 (319 download)
Download or read book Hafnium Oxide Gate Dielectrics for Deeply Scaled MOSFETs written by Zhihong Zhang and published by . This book was released on 2005 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Alexander Nichau
Publisher : Forschungszentrum Jülich
ISBN 13 : 3893368981
Total Pages : 199 pages
Book Rating : 4.8/5 (933 download)
Download or read book Characterization, integration and reliability of HfO2 and LaLuO3 high-κ/metal gate stacks for CMOS applications written by Alexander Nichau and published by Forschungszentrum Jülich. This book was released on 2014-04-03 with total page 199 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Tiezhong Ma
Publisher :
ISBN 13 :
Total Pages : 354 pages
Book Rating : 4.:/5 (319 download)
Download or read book The Fabrication and Characterization of MOSFETs with Titanium Dioxide and Hafnium Dioxide as Gate Dielectrics written by Tiezhong Ma and published by . This book was released on 2001 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Fred Roozeboom
Publisher : The Electrochemical Society
ISBN 13 : 9781566773966
Total Pages : 488 pages
Book Rating : 4.7/5 (739 download)
Download or read book Advanced Short-time Thermal Processing for Si-based CMOS Devices written by Fred Roozeboom and published by The Electrochemical Society. This book was released on 2003 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Fang Chen
Publisher :
ISBN 13 :
Total Pages : 406 pages
Book Rating : 4.:/5 (319 download)
Download or read book HfO2 Based Gate Dielectrics for Nanoscale MOSFETs written by Fang Chen and published by . This book was released on 2004 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Cor L. Claeys
Publisher : The Electrochemical Society
ISBN 13 : 9781566773089
Total Pages : 636 pages
Book Rating : 4.7/5 (73 download)
Download or read book ULSI Process Integration II written by Cor L. Claeys and published by The Electrochemical Society. This book was released on 2001 with total page 636 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Ban Wong
Publisher : John Wiley & Sons
ISBN 13 : 0471678864
Total Pages : 413 pages
Book Rating : 4.4/5 (716 download)
Download or read book Nano-CMOS Circuit and Physical Design written by Ban Wong and published by John Wiley & Sons. This book was released on 2005-04-08 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: Based on the authors' expansive collection of notes taken over the years, Nano-CMOS Circuit and Physical Design bridges the gap between physical and circuit design and fabrication processing, manufacturability, and yield. This innovative book covers: process technology, including sub-wavelength optical lithography; impact of process scaling on circuit and physical implementation and low power with leaky transistors; and DFM, yield, and the impact of physical implementation.
Author : S. Kar
Publisher : The Electrochemical Society
ISBN 13 : 1566776511
Total Pages : 550 pages
Book Rating : 4.5/5 (667 download)
Download or read book Physics and Technology of High-k Gate Dielectrics 6 written by S. Kar and published by The Electrochemical Society. This book was released on 2008-10 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: The issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, novel and still higher permittivity dielectric materials, CMOS processing with high-K layers, metals for gate electrodes, interface issues, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Author :
Publisher :
ISBN 13 :
Total Pages : 810 pages
Book Rating : 4.F/5 ( download)
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2009 with total page 810 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jacopo Franco
Publisher : Springer Science & Business Media
ISBN 13 : 9400776632
Total Pages : 203 pages
Book Rating : 4.4/5 (7 download)
Download or read book Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications written by Jacopo Franco and published by Springer Science & Business Media. This book was released on 2013-10-19 with total page 203 pages. Available in PDF, EPUB and Kindle. Book excerpt: Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finFET) devices. We propose a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack. The improved reliability properties here discussed strongly support (Si)Ge technology as a clear frontrunner for future CMOS technology nodes.
Author : Niladri Pratap Maity
Publisher : CRC Press
ISBN 13 : 1000527441
Total Pages : 248 pages
Book Rating : 4.0/5 (5 download)
Download or read book High-k Gate Dielectric Materials written by Niladri Pratap Maity and published by CRC Press. This book was released on 2020-12-18 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.
Author : Elie Maricau
Publisher : Springer Science & Business Media
ISBN 13 : 1461461634
Total Pages : 208 pages
Book Rating : 4.4/5 (614 download)
Download or read book Analog IC Reliability in Nanometer CMOS written by Elie Maricau and published by Springer Science & Business Media. This book was released on 2013-01-11 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on modeling, simulation and analysis of analog circuit aging. First, all important nanometer CMOS physical effects resulting in circuit unreliability are reviewed. Then, transistor aging compact models for circuit simulation are discussed and several methods for efficient circuit reliability simulation are explained and compared. Ultimately, the impact of transistor aging on analog circuits is studied. Aging-resilient and aging-immune circuits are identified and the impact of technology scaling is discussed. The models and simulation techniques described in the book are intended as an aid for device engineers, circuit designers and the EDA community to understand and to mitigate the impact of aging effects on nanometer CMOS ICs.
Author : Howard Huff
Publisher : Springer Science & Business Media
ISBN 13 : 3540745599
Total Pages : 364 pages
Book Rating : 4.5/5 (47 download)
Download or read book Into The Nano Era written by Howard Huff and published by Springer Science & Business Media. This book was released on 2008-09-14 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt: Even as we tentatively enter the nanotechnology era, we are now encountering the 50th anniversary of the invention of the IC. Will silicon continue to be the pre-eminent material and will Moore’s Law continue unabated, albeit in a broader economic venue, in the nanotechnology era? This monograph addresses these issues by a re-examination of the scientific and technological foundations of the micro-electronics era. It also features two visionary articles of Nobel laureates.
Author : Kalyan Biswas
Publisher : John Wiley & Sons
ISBN 13 : 1394188943
Total Pages : 340 pages
Book Rating : 4.3/5 (941 download)
Download or read book Advanced Nanoscale MOSFET Architectures written by Kalyan Biswas and published by John Wiley & Sons. This book was released on 2024-07-03 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal–oxide–semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology. The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs. Additional topics covered include: High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon–germanium (SiGe) FinFET and its challenges and future perspectives TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.
Author : Samares Kar
Publisher : The Electrochemical Society
ISBN 13 : 9781566774055
Total Pages : 512 pages
Book Rating : 4.7/5 (74 download)
Download or read book Physics and Technology of High-k Gate Dielectrics II written by Samares Kar and published by The Electrochemical Society. This book was released on 2004 with total page 512 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This volume is the proceedings of The Second International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues ... and was held during [the] 204th Meeting [of the Electrochemical Society] ..."--P. v.
Author : Simon Deleonibus
Publisher : CRC Press
ISBN 13 : 1351721771
Total Pages : 256 pages
Book Rating : 4.3/5 (517 download)
Download or read book Integrated Nanodevice and Nanosystem Fabrication written by Simon Deleonibus and published by CRC Press. This book was released on 2017-11-22 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its invention, the integrated circuit has necessitated new process modules and numerous architectural changes to improve application performances, power consumption, and cost reduction. Silicon CMOS is now well established to offer the integration of several tens of billions of devices on a chip or in a system. At present, there are important challenges in the introduction of heterogeneous co-integration of materials and devices with the silicon CMOS 2D- and 3D-based platforms. New fabrication techniques allowing strong energy and variability efficiency come in as possible players to improve the various figures of merit of fabrication technology. Integrated Nanodevice and Nanosystem Fabrication: Breakthroughs and Alternatives is the second volume in the Pan Stanford Series on Intelligent Nanosystems. The book contains 8 chapters and is divided into two parts, the first of which reports breakthrough materials and techniques such as single ion implantation in silicon and diamond, graphene and 2D materials, nanofabrication using scanning probe microscopes, while the second tackles the scaling and architectural aspects of silicon devices through HiK scaling for nanoCMOS, nanoscale epitaxial growth of group IV semiconductors, design for variability co-optimization in SOI FinFETs, and nanowires for CMOS and diversifications.
Author : D. Misra
Publisher : The Electrochemical Society
ISBN 13 : 1607688182
Total Pages : 411 pages
Book Rating : 4.6/5 (76 download)
Download or read book Semiconductors, Dielectrics, and Metals for Nanoelectronics 15: In Memory of Samares Kar written by D. Misra and published by The Electrochemical Society. This book was released on with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt:
