Growth of Single Crystalline Cubic Silicon Carbide on Porous Silicon by Chemical Vapor Deposition

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ISBN 13 :
Total Pages : 180 pages
Book Rating : 4.:/5 (841 download)

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Book Synopsis Growth of Single Crystalline Cubic Silicon Carbide on Porous Silicon by Chemical Vapor Deposition by : Kalyan Raju Cherukuvada

Download or read book Growth of Single Crystalline Cubic Silicon Carbide on Porous Silicon by Chemical Vapor Deposition written by Kalyan Raju Cherukuvada and published by . This book was released on 2004 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: Single crystalline 3C-SiC layers were grown on a porous Si seed using a single gas source, trimethylsilane. The method is environmentally friendly, utilizes a non-toxic gas, and is economical. Conversion of porous Si into SiC was also attempted using methane but the process did not lead to the formation of continuous layers. The porous Si layers were made by anodizing p-type Si (100) wafers in a mixture of hydrofluoric acid and ethanol. The SiC was grown in a UHV system that was converted into a low pressure CVD reactor and was fitted with a RF heating stage capable of heating the samples up to 1200 [superscript]oC. The formation of stoichiometric SiC was confirmed by Energy Dispersive Spectrometry (EDS) while the crystal structure was examined by X-ray diffraction. Atomic force microscopy (AFM) showed the formation of rough surfaces for thin SiC layers and large flat terraces for thick SiC layers. X-ray diffraction indicates the formation of fully relaxed single crystalline 3C-SIC (100) on Si (100) wafers. And it also suggests the presence of dominating SiC (100) crystal orientations within the layer.

Growth of Single Crystalline Silicon Carbide on Aluminum Nitride by Chemical Vapor Deposition

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ISBN 13 :
Total Pages : 154 pages
Book Rating : 4.:/5 (841 download)

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Book Synopsis Growth of Single Crystalline Silicon Carbide on Aluminum Nitride by Chemical Vapor Deposition by : Payam Shoghi

Download or read book Growth of Single Crystalline Silicon Carbide on Aluminum Nitride by Chemical Vapor Deposition written by Payam Shoghi and published by . This book was released on 2008 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: Crystalline layers of SiC were grown on A1N substrate using chemical vapor deposition (CVD) from a single gas source; Trimethylsilane as well as a combination of ethylene (C[subscript]2H[subscript]4), silane (SiH[subscript]4), and hydrogen (H[subscript]2) gas. The growth was conducted at temperatures ranging from 1100 to 1350[degrees]C and pressures ranging from 0.09 torr to l.86 torr. The study was conducted on AlN grown on sapphire as well as on polycrystalline AlN substrates. The CVD growth system, which was made by OSEMI, was designed to operate in wide range of pressures (10[superscript]-8 to atmospheric) and temperatures (room temperature to -2000[degrees]C) using RF heating. The system is integrated with a molecular beam epitaxy (MBE) unit to enable direct transfer of A1N layers, grown by MBE, into the CVD system. X-ray measurements, carried out using PANalytical X'Pert X-ray diffraction system demonstrated growth of single crystalline SiC while surface morphology was examined using Scanning Electron Microscopy (SEM) and Atomic Force Microscope (AFM), qualitative measure of the layers' stoichiometry was carried out using Energy Dispersive X-ray examination using conventional EDAX. The formation of single crystalline 3C-SiC was confirmed by X-ray diffraction. Atomic force microscopy (AFM) showed an increase in the roughness of the morphology for thick cubic SiC on A1N on Sapphire substrate. SEM and EDAX measurements showed the thickness of the SiC thin film and the ratio of Si and C atoms in the film.

Growth of Single Crystal Silicon Carbide by Halide Chemical Vapor Deposition

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ISBN 13 :
Total Pages : pages
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Book Synopsis Growth of Single Crystal Silicon Carbide by Halide Chemical Vapor Deposition by : Mark A. Fanton

Download or read book Growth of Single Crystal Silicon Carbide by Halide Chemical Vapor Deposition written by Mark A. Fanton and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Epitaxial Growth and Optoelectronic Characterization of Cubic Silicon Carbide Deposited Using Chemical Vapor Deposition on Porous Silicon

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ISBN 13 :
Total Pages : 406 pages
Book Rating : 4.:/5 (841 download)

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Book Synopsis Epitaxial Growth and Optoelectronic Characterization of Cubic Silicon Carbide Deposited Using Chemical Vapor Deposition on Porous Silicon by : Frederick Paul Vaccaro

Download or read book Epitaxial Growth and Optoelectronic Characterization of Cubic Silicon Carbide Deposited Using Chemical Vapor Deposition on Porous Silicon written by Frederick Paul Vaccaro and published by . This book was released on 1999 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: Cubic silicon carbide is a promising material for applications in high-power, high-frequency, high-temperature, and high-speed electronic devices. Fourier Transform Infrared Spectroscopy (FTIR), Secondary Ion Mass Spectrometry (SIMS), X-Ray Diffraction (XRD) and Atomic Force Microscopy (AFM) evaluations performed on thin films grown heteroepitaxially on porous (i.e. anodized) silicon using a new chemical vapor deposition (CVD) method employing trimethylsilane confirmed that the thin films were stoichiometric, cubic silicon carbide (3C-SiC). Conclusions were drawn on the basis of comparisons with published standards as well as with results generated on reference materials. SIMS profiles revealed the growth rates at approximately 1150̊C to vary from 2.1 to 4.0 Å/min. depending upon the slight variations in the CVD process trimethylsilane gas pressure. AFM evaluations revealed that the deposition mode at short deposition times was homo-oriented island nucleation and growth but that the 3C-SiC thin films evolved into continuous terraced layers at longer deposition times. Heterojunction (pn) junction diodes, fabricated from CVD and chemical vapor converted (CVC) porous silicon specimens, displayed world record breakdown voltages as high as 140 volts and 150 volts respectively. Historically, heterojunction (pn) junction diodes fabricated from 3C-SiC thin film specimens deposited on non-anodized displayed breakdown voltages below 10 to 20 volts.

Silicon Carbide Nanostructures

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Publisher : Springer
ISBN 13 : 3319087266
Total Pages : 336 pages
Book Rating : 4.3/5 (19 download)

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Book Synopsis Silicon Carbide Nanostructures by : Jiyang Fan

Download or read book Silicon Carbide Nanostructures written by Jiyang Fan and published by Springer. This book was released on 2014-07-26 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together the most up-to-date information on the fabrication techniques, properties, and potential applications of low dimensional silicon carbide (SiC) nanostructures such as nanocrystallites, nanowires, nanotubes, and nanostructured films. It also summarizes the tremendous achievements acquired during the past three decades involving structural, electronic, and optical properties of bulk silicon carbide crystals. SiC nanostructures exhibit a range of fascinating and industrially important properties, such as diverse polytypes, stability of interband and defect-related green to blue luminescence, inertness to chemical surroundings, and good biocompatibility. These properties have generated an increasing interest in the materials, which have great potential in a variety of applications across the fields of nanoelectronics, optoelectronics, electron field emission, sensing, quantum information, energy conversion and storage, biomedical engineering, and medicine. SiC is also a most promising substitute for silicon in high power, high temperature, and high frequency microelectronic devices. Recent breakthrough pertaining to the synthesis of ultra-high quality SiC single-crystals will bring the materials closer to real applications. Silicon Carbide Nanostructures: Fabrication, Structure, and Properties provides a unique reference book for researchers and graduate students in this emerging field. It is intended for materials scientists, physicists, chemists, and engineers in microelectronics, optoelectronics, and biomedical engineering.

Fabrication and Testing of Gas Sensors Based on Porous Silicon and Porous Silicon Carbide (3C-SiC)

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ISBN 13 :
Total Pages : 138 pages
Book Rating : 4.:/5 (841 download)

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Book Synopsis Fabrication and Testing of Gas Sensors Based on Porous Silicon and Porous Silicon Carbide (3C-SiC) by : Dong Thanh Lieu

Download or read book Fabrication and Testing of Gas Sensors Based on Porous Silicon and Porous Silicon Carbide (3C-SiC) written by Dong Thanh Lieu and published by . This book was released on 2000 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: Single crystalline cubic silicon carbide (3C-SiC) is one of the promising materials that can be used for high-power, high-frequency, and high-temperature devices. Thus, preparation of high quality single crystalline cubic silicon carbide and reproducible fabricated electronic devices based on 3C-SiC will have important technological impacts. In this thesis, we have developed a method for the fabrication of heterojunction Schottky diode gas sensors based on porous silicon and silicon carbide. Due to the large surface area of the porous layer, the adsorb gas species modify the I-V behavior of the Schottky diode or the silicon/silicon carbide heterojunction. It was found that the I-V behavior of the Schottky diodes strongly depends on the type of gases used. It was shown that a shift in the breakdown voltage ranging from I0V to 40V could be obtained depending on the structure of the gas sensor and the types of gas used. The porous silicon was made by anodization of p-type silicon using a mixture of hydrofluoric acid and ethanol. Chemical vapor deposition (CVD) was used to grow silicon carbide. Fourier Transform Infrared Spectroscopy (FTIR) and Secondary Ion Mass Spectrometry (SIMS) were used to verify the existence and stoichiometry of SiC in the prepared samples. X-Ray Diffraction and Transmission Electron Microscopy (TEM) were used to verify the crystalline structure of resulting SiC. Atomic Force Microscopy (AFM) tests were used to view the surface morphology of resulting samples.

Silicon Carbide Ceramics—1

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Publisher : Springer Science & Business Media
ISBN 13 : 9781851665600
Total Pages : 320 pages
Book Rating : 4.6/5 (656 download)

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Book Synopsis Silicon Carbide Ceramics—1 by : S. Somiya

Download or read book Silicon Carbide Ceramics—1 written by S. Somiya and published by Springer Science & Business Media. This book was released on 1991-08-31 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discovered by Edward G. Acheson about 1890, silicon carbide is one of the oldest materials and also a new material. It occurs naturally in meteorites, but in very small amounts and is not in a useable state as an industrial material. For industrial require ments, large amounts of silicon carbide must be synthesized by solid state reactions at high temperatures. Silicon carbide has been used for grinding and as an abrasive material since its discovery. During World War II, silicon carbide was used as a heating element; however, it was difficult to obtain high density sintered silicon carbide bodies. In 1974, S. Prochazka reported that the addition of small amounts of boron compounds and carbide were effective in the sintering process to obtain high density. It was then possible to produce high density sintered bodies by pressureless sintering methods in ordinary atmosphere. Since this development, silicon carbide has received great attention as one of the high temperature structural ceramic materials. Since the 1970s, many research papers have appeared which report studies of silicon carbide and silicon nitride for structural ceramics.

Cubic Silicon Carbide (3C SiC): Growth and Properties of Single Crystals and Polycrystalline Layers Prepared by Thermal Decomposition of Methyltrichlorosilance in Hydrogen

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ISBN 13 :
Total Pages : 21 pages
Book Rating : 4.:/5 (455 download)

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Book Synopsis Cubic Silicon Carbide (3C SiC): Growth and Properties of Single Crystals and Polycrystalline Layers Prepared by Thermal Decomposition of Methyltrichlorosilance in Hydrogen by : Stanislov Gorin

Download or read book Cubic Silicon Carbide (3C SiC): Growth and Properties of Single Crystals and Polycrystalline Layers Prepared by Thermal Decomposition of Methyltrichlorosilance in Hydrogen written by Stanislov Gorin and published by . This book was released on 1994 with total page 21 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report results from a contract tasking Russian Academy of Sciences as follows: Investigate the process of growing cubic silicon carbide from the vapor phase in the form of single crystals and polycrystalline layers that can be used for the production of various semiconducting devices and passive elements.

Growth of 3C-SiC on (111)Si Using Hot-wall Chemical Vapor Deposition

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (66 download)

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Book Synopsis Growth of 3C-SiC on (111)Si Using Hot-wall Chemical Vapor Deposition by : Christopher Locke

Download or read book Growth of 3C-SiC on (111)Si Using Hot-wall Chemical Vapor Deposition written by Christopher Locke and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: The heteroepitaxial growth of cubic silicon carbide أ-سىأ) َُ(١١١) ٱىىٌك َُ(سى) ٱ�قٱفْٰمٰٱ، �ىف ف وىُْ“فَُٰ ٌو-ُٰ�ف ٌٌكومىٍكف ٌ�ف ُِْلمٱُِىىٰ َُ(أضؤ) مْفك،ُْٰ وفٱ قمم َفكوىم�مل. ا�ُْوٰ �فٱ كلَُ�كمٰل �ٱىهَ ف �ٰ ُٱمٰ ِكُِْمٱٱ: نىٱْ ٰوٰم سى ٱ�قٱفْٰمٰ ٱ�نْفكم ىٱ ك�َُممْٰل ُٰسىأ �ىف ف كفقْىَُ“فىٰ َُكُِْمٱٱ فلَ ٱمكلَُ وٰم ه�ُْوٰ نُ ٣أ-سىأ ىٱ مِنْمٍُْل َُوٰم ىىَىٰف ٌكفقْىَُ“مل فٌ”م.ْ ؤ�ىْهَ كفقْىَُ“فىٰ،َُ وٰم ٱ�نْفكم نُ وٰم سى ىٱ ك�َُممْٰل ُٰ٣أ-سىأ، �وىكو ومٱٌِ ُٰىٍىَىٍ“م وٰم ٱمْٰٱٱ ى َوٰم ه�ُْىهَ ك”ْٱفٰ.ٌ ذفُِْمَ (أ٣ب٨) فلَ ٱىفٌمَ (سىب٤)، لى�ٌمٰل ى َو”لهُْم َ(ب٢)، �ممْ �ٱمل فٱ وٰم كفقْ َُفلَ ٱىىٌك َُٱ�ُكْم، مْٱمِكىٰ�م”ٌ. ء لمٱُِىىٰ َُفْمٰ نُ ف٬ُِِْىفٍمٰ”ٌ ١٠ �ơ/ٍو �فٱ مٱفٰقىٌٱومل ل�ىْهَ وٰم ىىَىٰف ٌكُِْمٱٱ ف ٰف مٰمٍِفْ�ٰمْ نُ �١٣٨٠ ℗ʻأ. شوم ىُِٰىٍ“مل كُِْمٱٱ لُِْ�كمل نىٱٌٍ �ىوٰ ظ-فْ” كُْىًهَ ك��ْم ن�-ٌٌ�ىلوٰ ف ٰوفنٌ-فٍ٬ى�ٍ ٍ(ئطبح) �ف�ٌمٱ نُ ٢١٩ فكْٱمك، �وىكو ىٱ ٱىهىَنىكف”ٌَٰ قممٰٰ ْوٰف َف”َ وُٰم ْ�ِقىٌٱومل مْٱ�ٱٌٰ ى َوٰم ىٌمٰفْ�ٰمْ. دكَم وٰىٱ كُِْمٱٱ �فٱ لم�ممٌُِل ف �ٌُم ْمٰمٍِفْ�ٰمْ كُِْمٱٱ �فٱ لم�ممٌُِل ف ٰف ٱ�ٌُم ْه�ُْوٰ فْمٰ نُ �٢ �ơ/ٍو ف ٰ١٢٢٥ ℗ʻأ. شوم ك”ْٱفٰ ٌ�ّفىٌ”ٰ �فٱ ىنَمىْ ُْف ٰوٰم مْل�كمل مٰمٍِفْ�ٰمْ ق� ٰوٰىٱ مَ� كُِْمٱٱ ف�ٌٌُٱ ن ُْوٰم ه�ُْوٰ نُ ٣أ-سىأ(١١١) نىٱٌٍ َُ٬ُىلم مْمٌفٱم فٌ”مٱْ ن ُْحإحس فىٌِِكفىٰٱَُ. ة َفللىىٰ،َُ ن ُْممٌكىَُْٰك لم�ىكم فىٌِِكفىٰٱَُ، ف �ٌُم ْمٰمٍِفْ�ٰمْ كُِْمٱٱ مْل�كمٱ وٰم هممَفْىٰ َُنُ لمنمكٱٰ كف�ٱمل ق” وٰم مَف”ٌْ ٨ ٪ ىٍٱفٍكٰو ى َوٰم كمُننىكىم َٰنُ وٰمفٍْ ٌم٬فِٱَى َُ(أشإ) قم�ٰمم َ٣أ-سىأ فلَ سى. ئىفَ”ٌٌ ف مَ� كُِْمٱٱ �ٱىهَ ف ”ٌُِ-سى ٱممل فٌ”م ْلمٱُِىمٰل َُف َ٬ُىلم-كفُمٰل سى �فنم ْ�فٱ �ٱمل ُٰن ٍُْ٣أ-سىأ نىٱٌٍ ن ُْحإحس فىٌِِكفىٰٱَُ. شوم مْٱ�ٱٌٰ ىلَىكفمٰل ىىَىٰف”ٌٌ وٰف ٰوٰم نىٱٌٍ فٍ” م�م َقم كٍَُُ”ْٱفٰىٌٌمَ (قفٱمل َُظ-فْ” م�ف�ٌفىٰ)َُ ق� ٰفٌمٰ ْففَ”ٌٱىٱ مِنْمٍُْل �ٱىهَ شإح ىلَىكفمٰل وٰم” �ممْ وىهو”ٌ-لُْممْل ”ٌُِك”ْٱفٰىٌٌمَ نىٱٌٍ. شوم ه�ُْ َ٣أ-سىأ نىٱٌٍ �ممْ ففَ”ٌ“مل �ٱىهَ ف �فىْم”ٰ نُ كوففْكمٰىْ“فىٰ َُمٰكوىَ�ّمٱ. شوم وٰىكمًَٱٱ نُ وٰم نىٱٌٍ �فٱ فٱٱمٱٱمل وٰ�ُْهو ئ�ُىْم ْشفْٱَن ٍُْىنَفْمْل (ئشةز) ٱمِكٱُْٰك”ُِ، فلَ كنَُىمٍْل (ى َوٰم كفٱم نُ ه�ُْوٰ َُ”ٌُِ-سى ٱممل فٌ”مٱْ) ق” كٱُْٱ-ٱمكىٰ َُٱكفىََهَ ممٌك َُْٰىٍكٱُْك”ُِ (سإح). شوم سإح كٱُْٱ-ٱمكىٰٱَُ �ممْ فٱٌ ُ�ٱمل ُٰى�َمٱىٰهفمٰ وٰم ٣أ-سىأ/٬ُىلم ىمَٰنْفكم. شوم ٱ�نْفكم وٍُِْهٌُُ” نُ وٰم نىٱٌٍ �فٱ ىٱَمِكمٰل �ىف خفٍُٱْ”ً ىمَٰنْممْكَم ىُِٰكف ٌىٍكٱُْك”ُِ، فىٍُٰك نكُْم ىٍكٱُْك”ُِ (ءئح)، فلَ سإح. شوم ك”ْٱفٰىٌٌمَ �ّفىٌ”ٰ نُ وٰم نىٱٌٍ �فٱ لممٰىٍْمَل وٰ�ُْهو ظ-فْ” لىننفْكىٰ َُ(ظزؤ).

Silicon Carbide, 1968

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ISBN 13 :
Total Pages : 394 pages
Book Rating : 4.:/5 (321 download)

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Book Synopsis Silicon Carbide, 1968 by : Heinz K. Henisch

Download or read book Silicon Carbide, 1968 written by Heinz K. Henisch and published by . This book was released on 1969 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Springer Handbook of Crystal Growth

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Publisher : Springer Science & Business Media
ISBN 13 : 3540747613
Total Pages : 1823 pages
Book Rating : 4.5/5 (47 download)

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Book Synopsis Springer Handbook of Crystal Growth by : Govindhan Dhanaraj

Download or read book Springer Handbook of Crystal Growth written by Govindhan Dhanaraj and published by Springer Science & Business Media. This book was released on 2010-10-20 with total page 1823 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.

Silicon Carbide, III-nitrides and Related Materials

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ISBN 13 :
Total Pages : 758 pages
Book Rating : 4.X/5 (6 download)

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Book Synopsis Silicon Carbide, III-nitrides and Related Materials by :

Download or read book Silicon Carbide, III-nitrides and Related Materials written by and published by . This book was released on 1998 with total page 758 pages. Available in PDF, EPUB and Kindle. Book excerpt: This two-volume set documents the present understanding of many topics of interest, such as the growth of bulk crystals, the growth of epitaxial layers, theoretical modelling, the characterization of as-grown material, the development of suitable processes and of electronic devices which can operate under extreme conditions and exhibit outstanding properties. PART 1: 1. SiC BULK GROWTH. 2. SiC EPITAXY. 2.1 Homoepitaxial Growth. 2.2 Heteroepitaxial Growth. 3. THEORY. 4. CHARACTERISATION OF SiC. 4.1 Surfaces and Interfaces. 4.2 Structural Characterisation. 4.3 Optical Characterisation. 4.4 Electrical Characterisation. 4.5 Magnetic Resonance Characterisation. 4.6 Thermal and Mechanical Properties. 5. MEASUREMENT TECHNIQUES. PART 2: 6. PROCESSING OF SiC. 6.1 Doping and Implantation. 6.2 Contacts and Etching. 6.3 Dielectrics. 6.4 Micromachining. 7. SiC DEVICES. 7.1 Surveys. 7.2 Unipolar Devices. 7.3 Bipolar Devices. 7.4 Sensors. 8. GROWTH OF III-NITRIDES. 9. CHARACTERISATION OF III-NITRIDES. 9.1 Structural Characterisation. 9.2 Optical Characterisation. 9.3 Electrical Characterisation. 10. PROCESSING OF III-NITRIDES. 11. III-NITRIDE DEVICES. 12. RELATED MATERIALS.

A Surface Science Investigation of Silicon Carbide

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ISBN 13 :
Total Pages : 150 pages
Book Rating : 4.:/5 (873 download)

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Book Synopsis A Surface Science Investigation of Silicon Carbide by :

Download or read book A Surface Science Investigation of Silicon Carbide written by and published by . This book was released on 1991 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Vapor Growth and Characterization of Single Crystal Silicon Carbide

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ISBN 13 :
Total Pages : 146 pages
Book Rating : 4.:/5 (625 download)

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Book Synopsis Vapor Growth and Characterization of Single Crystal Silicon Carbide by : Feng Liu

Download or read book Vapor Growth and Characterization of Single Crystal Silicon Carbide written by Feng Liu and published by . This book was released on 2004 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:

The Growth of SiC Crystals from Vapor by the Bridgman-Stockbarger Method

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ISBN 13 :
Total Pages : 40 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis The Growth of SiC Crystals from Vapor by the Bridgman-Stockbarger Method by : Juris Smiltens

Download or read book The Growth of SiC Crystals from Vapor by the Bridgman-Stockbarger Method written by Juris Smiltens and published by . This book was released on 1974 with total page 40 pages. Available in PDF, EPUB and Kindle. Book excerpt: From the dissociation curve (P vs. T), an equation for the rate of raising the pressure P of the binary vapor for obtaining the required linear growth rate of the crystal of c centimeters per hour is derived. It is shown that the rate is nearly proportional to P. Modifications of the furnace since the last report (Mat. Res. Bull. 4, S85, 1969) are described. Justification for the use of helium as the inert ambient gas is given. Two techniques are used: (1) growing with constant temperature of the crucible point and (2) growing with constant pressure of the sublimation bottle. To date, only polycrystalline boules consisting of large grains have been obtained. It is believed, however, that with certain technological improvements the methods that are developed here will ultimately yield single crystal boules. As a by-product, small cubic crystals, about one mm in the largest dimension, with good quality faces (cube and octahedron) have been obtained.

Growth, Processing and Characterization of Beta-silicon Carbide Single Crystals

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ISBN 13 :
Total Pages : 49 pages
Book Rating : 4.:/5 (227 download)

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Book Synopsis Growth, Processing and Characterization of Beta-silicon Carbide Single Crystals by : Robert W. Bartlett

Download or read book Growth, Processing and Characterization of Beta-silicon Carbide Single Crystals written by Robert W. Bartlett and published by . This book was released on 1967 with total page 49 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial vapor deposition of beta-silicon carbide on (111) beta-silicon carbide platelets and diborane doping were used to grow p-type layers on n-type substrates. Etching and thin film metallizing procedures were developed for silicon carbide, a chlorine-oxygen gas etch at 900 degrees C being used. Specific surface characteristics of solution-grown crystals, epitaxial crystals, and crystals etched in various fluids were correlated with crystal polarity. (Author).

A Surface Science Investigation of Silicon Carbide

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ISBN 13 :
Total Pages : 316 pages
Book Rating : 4.:/5 (33 download)

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Book Synopsis A Surface Science Investigation of Silicon Carbide by : James Michael Powers

Download or read book A Surface Science Investigation of Silicon Carbide written by James Michael Powers and published by . This book was released on 1991 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt: