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Growth Of Large Aluminum Nitride Single Crystals With Thermal Gradient Control
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Book Synopsis Growth of Large Aluminum Nitride Single Crystals with Thermal-gradient Control by :
Download or read book Growth of Large Aluminum Nitride Single Crystals with Thermal-gradient Control written by and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
Book Synopsis The Single Crystal Synthesis and Some Properties of Aluminum Nitride by : Cortland O. Dugger
Download or read book The Single Crystal Synthesis and Some Properties of Aluminum Nitride written by Cortland O. Dugger and published by . This book was released on 1975 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt: This final report, which covers the period from March 1972 to 30 June 1975, discusses some conditions for the synthesis of aluminum nitride (AIN) single crystals from solution. The solvent systems used are unique and novel. The average sized, water-white, bipyramidal AIN single crystals reproducibly grown from solution only were 1.1 mm long X 0.3 mm wide. The average sized, AIN single crystals grown from a combined solution-vapor reaction technique were 4mm long X 3 mm wide X 2mm thick. The in-house quantitative evaluation of the crystals was restricted to Laue patterns and emission spectrometry only. In Appendices A, B, C, and D, general discussions of solution growth, other AIN growth methods, some properties of AIN, and a very brief discussion of the newly emerging surface acoustic wave (SAW) device technology and why the use of AIN is considered a good electro-acoutic material in SAW devices are presented. (Author).
Book Synopsis Bulk Crystal Growth, Characterization and Thermodynamic Analysis of Aluminum Nitride and Related Nitrides by : Li Du
Download or read book Bulk Crystal Growth, Characterization and Thermodynamic Analysis of Aluminum Nitride and Related Nitrides written by Li Du and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The sublimation recondensation crystal growth of aluminum nitride, titanium nitride, and yttrium nitride were explored experimentally and theoretically. Single crystals of these nitrides are potentially suitable as substrates for AlGaInN epitaxial layers, which are employed in ultraviolet optoelectronics including UV light-emitting diodes and laser diodes, and high power high frequency electronic device applications. A thermodynamic analysis was applied to the sublimation crystal growth of aluminum nitride to predict impurities transport (oxygen, carbon, and hydrogen) and to study the aspects of impurities incorporation for different growth conditions. A source purification procedure was established to minimize the impurity concentration and avoid degradation of the crystal's properties. More than 98% of the oxygen, 99.9% of hydrogen and 90% of carbon originally in the source was removed. The AlN crystal growth process was explored in two ways: self-seeded growth with spontaneous nucleation directly on the crucible lid or foil, and seeded growth on SiC and AlN. The oxygen concentration was 2 ~ 4 x 1018cm-3, as measured by secondary ion mass spectroscopy in the crystals produced by self-seeded growth. Crystals grown from AlN seeds have visible grain size expansion. The initial AlN growth on SiC at a low temperature range (1400°C ~1600°C) was examined to understand the factors controlling nucleation. Crystals were obtained from c-plane on-axis and off-axis, Si-face and C-face, as well as m-plane SiC seeds. In all cases, crystal growth was fastest perpendicular to the c-axis. The growth rate dependence on temperature and pressure was determined for TiN and YN crystals, and their activation energies were 775.8±29.8kJ/mol and 467.1±21.7kJ/mol respectively. The orientation relationship of TiN (001) [2 parallel vertical lines] W (001) with TiN [100] [2 parallel vertical lines] W [110], a 45° angle between TiN [100] and W [100], was seen for TiN crystals deposited on both (001) textured tungsten and randomly orientated tungsten. Xray diffraction confirmed that the YN crystals were rock-salt structure, with a lattice constant of 4.88[A with a circle above it]. Cubic yttria was detected in YN sample from the oxidation upon its exposed to air for limited time by XRD, while non-cubic yttria was detected in YN sample for exposures more than one hour by Raman spectra.
Book Synopsis Simulation of Transport Phenomena in Aluminum Nitride Single-Crystal Growth by :
Download or read book Simulation of Transport Phenomena in Aluminum Nitride Single-Crystal Growth written by and published by . This book was released on 2002 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: The goal of this project is to apply advanced computer-aided modeling techniques for simulating coupled radiation transfer present in the bulk growth of aluminum nitride (AlN) single-crystals. Producing and marketing high-quality single-crystals of AlN is currently the focus of Crystal IS, Inc., which is engaged in building a new generation of substrates for electronic and optical-electronic devices. Modeling and simulation of this company's proprietary innovative processing of AlN can substantially improve the understanding of physical phenomena, assist design, and reduce the cost and time of research activities. This collaborative work supported the goals of Crystal IS, Inc. in process scale-up and fundamental analysis with promising computational tools.
Book Synopsis Semiconductors: Silicon Carbide and Related Materials by : Min Lu
Download or read book Semiconductors: Silicon Carbide and Related Materials written by Min Lu and published by Trans Tech Publications Ltd. This book was released on 2019-05-17 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt: Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) Selected, peer reviewed papers from the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018), July 9-12, 2018, Beijing, China
Book Synopsis Proceedings of the ASME Heat Transfer Division by :
Download or read book Proceedings of the ASME Heat Transfer Division written by and published by . This book was released on 2002 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 2240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Sublimation Growth of ALN Bulk Crystals and High-speed CVD Growth of SiC Epilayers, and Their Characterization by :
Download or read book Sublimation Growth of ALN Bulk Crystals and High-speed CVD Growth of SiC Epilayers, and Their Characterization written by and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The effects of process conditions on the material's properties were investigated for the sublimation growth of aluminum nitride and the epitaxial growth of silicon carbide. Since the mid 1990's, these semiconductors have made new types of high power electronics and short wavelength optoelectronics that were never before feasible. The sublimation growth of AlN crystals on SiC seeds was carried out to produce high quality AlN bulk crystals. Si-face, 3.5 ° off-axis 6H-SiC (0001) and 8 ° off-axis 4H-SiC (0001) wafers were used as the substrates. An investigation of the initial growth demonstrated 1800 0́3 1850°C was the optimum temperature for AlN growth. By optimizing the temperature gradient, large area AlN layer was deposited. Consecutive growths and continuous growth were performed to enlarge the crystal thickness. Single-crystalline AlN layers, each with a thickness of 2 mm and a diameter of 20 mm, were produced. X-ray diffraction confirmed the grown AlN had good crystal quality. Approximately 3 -- 6 at% of Si and 5 -- 8 at% of C were detected in the crystals by x-ray photoelectron spectroscopy, which came from the decomposition of SiC seeds and the degradation of the graphite components in the furnace. Molten KOH/NaOH etching revealed the dislocation density decreased from 108 cm-2 to 106 cm-2 as the AlN layer thickness increased from 30 [micro milligram] to 2 mm. Epitaxial growth of SiC was carried out in a chemical vapor deposition system. High-quality 6H-SiC and 4H-SiC homoepitaxial films were produced at growth rates up to 80 [micro milligram]/hr by using a novel single precursor, methyltrichlorosilane (MTS). Inclusions of 3C-SiC were circumvented by employing 8° mis-orientated substrates. Adjusting the H2/Ar flow ratio in the carrier gas effectively changed the C/Si ratio in the gas phase due to the reaction between H2 and the graphite heater; thereby, influencing surface roughness and dislocation density. Low H2/Ar ratios of 0.1 and 0.125 produced smooth surfaces without step-bunching. Higher H2/Ar ratios of 0.2 and 0.33 enhanced the conversion of basal plane dislocations into threading edge dislocations, and reduced the density of basal plane dislocations to approximately 600 cm-2.
Book Synopsis Silicon Carbide — 1968 by : H. K. Henisch
Download or read book Silicon Carbide — 1968 written by H. K. Henisch and published by Elsevier. This book was released on 2013-10-22 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide — 1968 presents the proceedings of the International Conference on Silicon Carbide held in University Park, Pennsylvania on October 20-23, 1968. The book covers papers about the perspectives on silicon carbide; several problems in the development of silicon carbide semiconductors, such as the control of crystal structure and analysis. The thermal properties of beta-silicon carbide from 20 to 2000 degrees and the influence of impurities on the growth of silicon carbide crystals in chemical reactions and by recrystallization are also discussed. The book then presents papers about silicon carbide single crystal growth using the Norton process; the principles of solution and traveling solvent growth of silicon carbide; the growth of silicon carbide from cobalt-silicon solutions; and the growth of silicon carbide from vapor by the Bridgman-Stockbarger method. Papers about the growth of crystals and epitaxial layers of beta silicon carbide; the heteroepitaxy of beta-silicon carbide employing liquid metals; some aspects of disorder in silicon carbide; and the dependence of physical properties on polytype structure are also considered. The book describes topics about the optical properties of polytypes of silicon carbide as well as the phase stability of silicon carbide against nitrogen. Other papers about the physical and electronic properties of silicon carbide are also discussed in the book. People involved in semiconductor industries will find the book helpful.
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1974 with total page 538 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Synthesis of High Purity Gallium Nitride Powders and Growth and Characterization of Aluminum Nitride and Gallium Nitride Bulk Single Crystals by : Cengiz Mustafa Balkas
Download or read book Synthesis of High Purity Gallium Nitride Powders and Growth and Characterization of Aluminum Nitride and Gallium Nitride Bulk Single Crystals written by Cengiz Mustafa Balkas and published by . This book was released on 1997 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Comprehensive Semiconductor Science and Technology by :
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Book Synopsis III-Nitride Semiconductors and Their Modern Devices by : Bernard Gil
Download or read book III-Nitride Semiconductors and Their Modern Devices written by Bernard Gil and published by Semiconductor Science and Tech. This book was released on 2013-08-22 with total page 661 pages. Available in PDF, EPUB and Kindle. Book excerpt: All recent developments of nitrides and of their technology are gathered here in a single book, with chapters written by world leaders in the field.
Book Synopsis Crystal Growth Technology by : Hans J. Scheel
Download or read book Crystal Growth Technology written by Hans J. Scheel and published by John Wiley & Sons. This book was released on 2005-12-13 with total page 694 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume deals with the technologies of crystal fabrication, of crystal machining, and of epilayer production and is the first book on industrial and scientific aspects of crystal and layer production. The major industrial crystals are treated: Si, GaAs, GaP, InP, CdTe, sapphire, oxide and halide scintillator crystals, crystals for optical, piezoelectric and microwave applications and more. Contains 29 contributions from leading crystal technologists covering the following topics: * General aspects of crystal growth technology * Silicon * Compound semiconductors * Oxides and halides * Crystal machining * Epitaxy and layer deposition Scientific and technological problems of production and machining of industrial crystals are discussed by top experts, most of them from the major growth industries and crystal growth centers. In addition, it will be useful for the users of crystals, for teachers and graduate students in materials sciences, in electronic and other functional materials, chemical and metallurgical engineering, micro-and optoelectronics including nanotechnology, mechanical engineering and precision-machining, microtechnology, and in solid-state sciences.
Book Synopsis Publications by : United States. National Bureau of Standards
Download or read book Publications written by United States. National Bureau of Standards and published by . This book was released on 1991 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Publications of the National Institute of Standards and Technology ... Catalog by : National Institute of Standards and Technology (U.S.)
Download or read book Publications of the National Institute of Standards and Technology ... Catalog written by National Institute of Standards and Technology (U.S.) and published by . This book was released on 1991 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt:
