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Growth And Characterization Of Metalorganic Chemical Vapor Deposition Ingan
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Book Synopsis Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII) by : F. Ren
Download or read book Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII) written by F. Ren and published by The Electrochemical Society. This book was released on 1995 with total page 524 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Handbook of GaN Semiconductor Materials and Devices by : Wengang (Wayne) Bi
Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 775 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.
Download or read book Epitaxy written by Miao Zhong and published by BoD – Books on Demand. This book was released on 2018-03-07 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt: The edited volume "Epitaxy" is a collection of reviewed and relevant research chapters, offering a comprehensive overview of recent developments in the field of materials science. The book comprises single chapters authored by various researchers and edited by an expert active in this research area. All chapters are complete in themselves but are united under a common research study topic. This publication aims at providing a thorough overview of the latest research efforts by international authors in the field of materials science as well as opening new possible research paths for further developments.
Book Synopsis State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics IV by : R. F. Kopf
Download or read book State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics IV written by R. F. Kopf and published by The Electrochemical Society. This book was released on 2003 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Non-Equilibrium Dynamics of Semiconductors and Nanostructures by : Kong-Thon Tsen
Download or read book Non-Equilibrium Dynamics of Semiconductors and Nanostructures written by Kong-Thon Tsen and published by CRC Press. This book was released on 2018-10-03 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt: The advent of the femto-second laser has enabled us to observe phenomena at the atomic timescale. One area to reap enormous benefits from this ability is ultrafast dynamics. Collecting the works of leading experts from around the globe, Non-Equilibrium Dynamics of Semiconductors and Nanostructures surveys recent developments in a variety of areas in ultrafast dynamics. In eight authoritative chapters illustrated by more than 150 figures, this book spans a broad range of new techniques and advances. It begins with a review of spin dynamics in a high-mobility two-dimensional electron gas, followed by the generation, propagation, and nonlinear properties of high-amplitude, ultrashort strain solitons in solids. The discussion then turns to nonlinear optical properties of nanoscale artificial dielectrics, optical properties of GaN self-assembled quantum dots, and optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based semiconductors. Rounding out the presentation, the book examines ultrafast non-equilibrium electron dynamics in metal nanoparticles, monochromatic acoustic phonons in GaAs, and electromagnetically induced transparency in semiconductor quantum wells. With its pedagogical approach and practical, up-to-date coverage, Non-Equilibrium Dynamics of Semiconductors and Nanostructures allows you to easily put the material into practice, whether you are a seasoned researcher or new to the field.
Book Synopsis Metalorganic Vapor Phase Epitaxy (MOVPE) by : Stuart Irvine
Download or read book Metalorganic Vapor Phase Epitaxy (MOVPE) written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-08-27 with total page 586 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Book Synopsis III-Nitride Semiconductors and their Modern Devices by : Bernard Gil
Download or read book III-Nitride Semiconductors and their Modern Devices written by Bernard Gil and published by OUP Oxford. This book was released on 2013-08-22 with total page 661 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial activity relating to GaN, with GaN now ranking at the second position (after Si) among all semiconductors. This is mainly thanks to LEDs, but also to the emergence of lasers and high power and high frequency electronics. GaN-related research activities are also diversifying, ranging from advanced optical sources and single electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters. All recent developments of nitrides and of their technology are gathered here in a single volume, with chapters written by world leaders in the field. This third book of the series edited by B. Gil is complementary to the preceding two, and is expected to offer a modern vision of nitrides and of their devices to a large audience of readers.
Book Synopsis Nitrides with Nonpolar Surfaces by : Tanya Paskova
Download or read book Nitrides with Nonpolar Surfaces written by Tanya Paskova and published by John Wiley & Sons. This book was released on 2008-09-08 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first monograph to discuss in detail the current stage of development of nonpolar nitrides, with specific emphasis on the three main topics of crystal growth, properties and device studies. World-class researchers summarize their own recent achievements in their respective fields of expertise, covering both nonpolar and semipolar nitride materials. The bulk of the discussion in each chapter is related to the physical properties of the material obtained by the respective technique, in particular, defect density and properties of the defects in nonpolar nitrides. In addiiton, the optical and vibrational properties are also addressed in several chapters, as is progress in heterostructures, quantum wells and dots based on the AlGaN/GaN and the InGaN/GaN systems. Finally, an outlook of the application areas of the differently grown materials is presented in most chapters, together with the capabilities and limitations of the respective growth approaches used.
Book Synopsis Low-dimensional Nitride Semiconductors by : Bernard Gil
Download or read book Low-dimensional Nitride Semiconductors written by Bernard Gil and published by . This book was released on 2002 with total page 494 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optoelectronics and electronics of the years to come are likely to change dramatically. Most of the outdoor lighting systems will be replaced by light-emitting diodes that operate in the whole visible part of the electromagnatic spectrum. Transistors operating at high frequency and with high power are under development and likely to hit the market very rapidly. Compact solid-state lasers that operate in the near-ultraviolet range are going to be utilized for such widely used applications as read-write tasks in printer and CD drives. Ultraviolet detectors will be used at a wide scale for many application, ranging from flame detectors to medical instruments. This book concerns itself with the questions why nitride semiconductors are so promising over such a wide range of applications, what the current issues are in the research laboratories, and what the prospects of new electronic devices are in the dawn of the twenty-first century.
Book Synopsis Rare Earth and Transition Metal Doping of Semiconductor Materials by : Volkmar Dierolf
Download or read book Rare Earth and Transition Metal Doping of Semiconductor Materials written by Volkmar Dierolf and published by Woodhead Publishing. This book was released on 2016-01-23 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron's electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. - Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices - Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics - Details the properties of semiconductors for spintronics
Download or read book III-Nitride Electronic Devices written by and published by Academic Press. This book was released on 2019-10-18 with total page 542 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. - Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas – RF and power electronics - Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies - Written by a panel of academic and industry experts in each field
Book Synopsis III-Nitride Based Light Emitting Diodes and Applications by : Tae-Yeon Seong
Download or read book III-Nitride Based Light Emitting Diodes and Applications written by Tae-Yeon Seong and published by Springer Science & Business Media. This book was released on 2014-07-08 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on the substrates used, such as sapphire, Si, etc. In addition, efficiency droop, growth on different orientations and polarization are also important. Chip processing and packaging technologies are key issues. This book presents a comprehensive review of contemporary LED issues. Given the interest and importance of future research in nitride semiconducting materials and solid state lighting applications, the contents are very timely. The book is composed of chapters written by leading researchers in III-nitride semiconducting materials and device technology. This book will be of interest to scientists and engineers working on LEDs for lighting applications. Postgraduate researchers working on LEDs will also benefit from the issues this book provides.
Book Synopsis Power GaN Devices by : Matteo Meneghini
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Book Synopsis Mechanical Stress on the Nanoscale by : Margrit Hanbücken
Download or read book Mechanical Stress on the Nanoscale written by Margrit Hanbücken and published by John Wiley & Sons. This book was released on 2011-12-07 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bringing together experts from the various disciplines involved, this first comprehensive overview of the current level of stress engineering on the nanoscale is unique in combining the theoretical fundamentals with simulation methods, model systems and characterization techniques. Essential reading for researchers in microelectronics, optoelectronics, sensing, and photonics.
Book Synopsis Iii-nitride Devices And Nanoengineering by : Zhe Chuan Feng
Download or read book Iii-nitride Devices And Nanoengineering written by Zhe Chuan Feng and published by World Scientific. This book was released on 2008-08-19 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt: Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field./a
Book Synopsis Optoelectronic Nanodevices by : Minas M. Stylianakis
Download or read book Optoelectronic Nanodevices written by Minas M. Stylianakis and published by MDPI. This book was released on 2020-04-15 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last decade, novel graphene related materials (GRMs), perovskites, as well as metal oxides and other metal nanostructures have received the interest of the scientific community. Due to their extraordinary physical, optical, thermal, and electrical properties, which are correlated with their 2D ultrathin atomic layer structure, large interlayer distance, ease of functionalization, and bandgap tunability, these nanomaterials have been applied in the development or the improvement of innovative optoelectronic applications, as well as the expansion of theoretical studies and simulations in the fast-growing fields of energy (photovoltaics, energy storage, fuel cells, hydrogen storage, catalysis, etc.), electronics, photonics, spintronics, and sensing devices. The continuous nanostructure-based applications development has provided the ability to significantly improve existing products and to explore the design of materials and devices with novel functionalities. This book demonstrates some of the most recent trends and advances in the interdisciplinary field of optoelectronics. Most articles focus on light emitting diodes (LEDs) and solar cells (SCs), including organic, inorganic, and hybrid configurations, whereas the rest address photodetectors, transistors, and other well-known dynamic optoelectronic devices. In this context, this exceptional collection of articles is directed at a broad scientific audience of chemists, materials scientists, physicists, and engineers, with the goals of highlighting the potential of innovative optoelectronic applications incorporating nanostructures and inspiring their realization.
Book Synopsis The Physics of Semiconductor Devices by : R. K. Sharma
Download or read book The Physics of Semiconductor Devices written by R. K. Sharma and published by Springer. This book was released on 2019-01-31 with total page 1260 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.
