Growth and Characterization of III-V Semiconductors for Device Applications

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Publisher : Createspace Independent Publishing Platform
ISBN 13 : 9781721216017
Total Pages : 32 pages
Book Rating : 4.2/5 (16 download)

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Book Synopsis Growth and Characterization of III-V Semiconductors for Device Applications by : National Aeronautics and Space Administration (NASA)

Download or read book Growth and Characterization of III-V Semiconductors for Device Applications written by National Aeronautics and Space Administration (NASA) and published by Createspace Independent Publishing Platform. This book was released on 2018-06-16 with total page 32 pages. Available in PDF, EPUB and Kindle. Book excerpt: The research goal was to achieve a fundamental understanding of the physical processes occurring at the surfaces and interfaces of epitaxially grown InGaAs/GaAs (100) heterostructures. This will facilitate the development of quantum well devices for infrared optical applications and provide quantitative descriptions of key phenomena which impact their performance. Devices impacted include high-speed laser diodes and modulators for fiber optic communications at 1.55 micron wavelengths and intersub-band lasers for longer infrared wavelengths. The phenomenon of interest studied was the migration of indium in InGaAs structures. This work centered on the molecular beam epitaxy reactor and characterization apparatus donated to CAU by AT&T Bell Laboratories. The material characterization tool employed was secondary ion mass spectrometry. The training of graduate and undergraduate students was an integral part of this program. The graduate students received a thorough exposure to state-of-the-art techniques and equipment for semiconductor materials analysis as part of the Master''s degree requirement in physics. The undergraduates were exposed to a minority scientist who has an excellent track record in this area. They also had the opportunity to explore surface physics as a career option. The results of the scientific work was published in a refereed journal and several talks were presented professional conferences and academic seminars. Williams, Michael D. Glenn Research Center

III–V Semiconductors

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 3642676111
Total Pages : 171 pages
Book Rating : 4.6/5 (426 download)

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Book Synopsis III–V Semiconductors by : Herbert C. Freyhardt

Download or read book III–V Semiconductors written by Herbert C. Freyhardt and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: Springer-Verlag, Berlin Heidelberg, in conjunction with Springer-Verlag New York, is pleased to announce a new series: CRYSTALS Growth, Properties, and Applications The series presents critical reviews of recent developments in the field of crystal growth, properties, and applications. A substantial portion of the new series will be devoted to the theory, mechanisms, and techniques of crystal growth. Occasionally, clear, concise, complete, and tested instructions for growing crystals will be published, particularly in the case of methods and procedures that promise to have general applicability. Responding to the ever-increasing need for crystal substances in research and industry, appropriate space will be devoted to methods of crystal characterization and analysis in the broadest sense, even though reproducible results may be expected only when structures, microstructures, and composition are really known. Relations among procedures, properties, and the morphology of crystals will also be treated with reference to specific aspects of their practical application. In this way the series will bridge the gaps between the needs of research and industry, the pos sibilities and limitations of crystal growth, and the properties of crystals. Reports on the broad spectrum of new applications - in electronics, laser tech nology, and nonlinear optics, to name only a few - will be of interest not only to industry and technology, but to wider areas of applied physics as well and to solid state physics in particular. In response to the growing interest in and importance of organic crystals and polymers, they will also be treated.

III-V Semiconductor Materials and Devices

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Publisher : Elsevier
ISBN 13 : 0444596356
Total Pages : 740 pages
Book Rating : 4.4/5 (445 download)

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Book Synopsis III-V Semiconductor Materials and Devices by : R.J. Malik

Download or read book III-V Semiconductor Materials and Devices written by R.J. Malik and published by Elsevier. This book was released on 2012-12-02 with total page 740 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.

Growth and Characterization of III-V Semiconductors with Rare Earth Impurities for Optoelectronic Devices

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Publisher :
ISBN 13 :
Total Pages : 3 pages
Book Rating : 4.:/5 (227 download)

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Book Synopsis Growth and Characterization of III-V Semiconductors with Rare Earth Impurities for Optoelectronic Devices by :

Download or read book Growth and Characterization of III-V Semiconductors with Rare Earth Impurities for Optoelectronic Devices written by and published by . This book was released on 1993 with total page 3 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Topics in Growth and Device Processing of III-V Semiconductors

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Author :
Publisher : World Scientific
ISBN 13 : 9789810218843
Total Pages : 568 pages
Book Rating : 4.2/5 (188 download)

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Book Synopsis Topics in Growth and Device Processing of III-V Semiconductors by : S. J. Pearton

Download or read book Topics in Growth and Device Processing of III-V Semiconductors written by S. J. Pearton and published by World Scientific. This book was released on 1996 with total page 568 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.

Characterization in Compound Semiconductor Processing

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Author :
Publisher : Momentum Press
ISBN 13 : 1606500430
Total Pages : 217 pages
Book Rating : 4.6/5 (65 download)

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Book Synopsis Characterization in Compound Semiconductor Processing by : Gary E. McGuire

Download or read book Characterization in Compound Semiconductor Processing written by Gary E. McGuire and published by Momentum Press. This book was released on 2010-01-01 with total page 217 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound semiconductors such as Gallium Arsenide, Gallium Aluminum Arsenide, and Indium Phosphide are often difficult to characterize and present a variety of challenges from substrate preparation, to epitaxial growth to dielectric film deposition to dopant introduction. This book reviews the common classes of compound semiconductors, their physical, optical and electrical properties and the various types of methods used for characterizing them when analyzing for defects and application problems. The book features: -- Characterization of III-V Thin Films for Electronic and Optical applications -- Characterization of Dielectric Insulating Film layers -- A Special case study on Deep Level Transient Spectroscopy on GaAs -- Concise summaries of major characterization technologies for compound semiconductor materials, including Auger Electron Spectroscopy, Ballistic Electron Emission Microscopy, Energy-Dispersive X-Ray Spectroscopy, Neutron Activation Analysis and Raman Spectroscopy

Dilute III-V Nitride Semiconductors and Material Systems

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 3540745297
Total Pages : 607 pages
Book Rating : 4.5/5 (47 download)

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Book Synopsis Dilute III-V Nitride Semiconductors and Material Systems by : Ayse Erol

Download or read book Dilute III-V Nitride Semiconductors and Material Systems written by Ayse Erol and published by Springer Science & Business Media. This book was released on 2008-01-12 with total page 607 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.

III–V Semiconductors

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Publisher : Springer
ISBN 13 : 9783540099574
Total Pages : 166 pages
Book Rating : 4.0/5 (995 download)

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Book Synopsis III–V Semiconductors by : Herbert C. Freyhardt

Download or read book III–V Semiconductors written by Herbert C. Freyhardt and published by Springer. This book was released on 1980-06-01 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt: Springer-Verlag, Berlin Heidelberg, in conjunction with Springer-Verlag New York, is pleased to announce a new series: CRYSTALS Growth, Properties, and Applications The series presents critical reviews of recent developments in the field of crystal growth, properties, and applications. A substantial portion of the new series will be devoted to the theory, mechanisms, and techniques of crystal growth. Occasionally, clear, concise, complete, and tested instructions for growing crystals will be published, particularly in the case of methods and procedures that promise to have general applicability. Responding to the ever-increasing need for crystal substances in research and industry, appropriate space will be devoted to methods of crystal characterization and analysis in the broadest sense, even though reproducible results may be expected only when structures, microstructures, and composition are really known. Relations among procedures, properties, and the morphology of crystals will also be treated with reference to specific aspects of their practical application. In this way the series will bridge the gaps between the needs of research and industry, the pos sibilities and limitations of crystal growth, and the properties of crystals. Reports on the broad spectrum of new applications - in electronics, laser tech nology, and nonlinear optics, to name only a few - will be of interest not only to industry and technology, but to wider areas of applied physics as well and to solid state physics in particular. In response to the growing interest in and importance of organic crystals and polymers, they will also be treated.

III-V Compound Semiconductors

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Author :
Publisher : CRC Press
ISBN 13 : 1439815232
Total Pages : 588 pages
Book Rating : 4.4/5 (398 download)

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Book Synopsis III-V Compound Semiconductors by : Tingkai Li

Download or read book III-V Compound Semiconductors written by Tingkai Li and published by CRC Press. This book was released on 2016-04-19 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more

Growth and Characterization of III-V Compound Semiconductors

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Publisher :
ISBN 13 :
Total Pages : 74 pages
Book Rating : 4.:/5 (376 download)

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Book Synopsis Growth and Characterization of III-V Compound Semiconductors by : Jeremy M. Milikow

Download or read book Growth and Characterization of III-V Compound Semiconductors written by Jeremy M. Milikow and published by . This book was released on 1997 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Synthesis and Characterization of Highly-mismatched III-V Semiconductors by Gas-source Molecular Beam Epitaxy

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Publisher :
ISBN 13 :
Total Pages : 300 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis Synthesis and Characterization of Highly-mismatched III-V Semiconductors by Gas-source Molecular Beam Epitaxy by : Tsung-Pei Chin

Download or read book Synthesis and Characterization of Highly-mismatched III-V Semiconductors by Gas-source Molecular Beam Epitaxy written by Tsung-Pei Chin and published by . This book was released on 1993 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt:

III-V Nitride Semiconductors

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Publisher : CRC Press
ISBN 13 : 1000723771
Total Pages : 718 pages
Book Rating : 4.0/5 (7 download)

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Book Synopsis III-V Nitride Semiconductors by : Edward T. Yu

Download or read book III-V Nitride Semiconductors written by Edward T. Yu and published by CRC Press. This book was released on 2022-10-30 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt: The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.

Vapor Crystal Growth and Characterization

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Author :
Publisher : Springer Nature
ISBN 13 : 303039655X
Total Pages : 226 pages
Book Rating : 4.0/5 (33 download)

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Book Synopsis Vapor Crystal Growth and Characterization by : Ching-Hua Su

Download or read book Vapor Crystal Growth and Characterization written by Ching-Hua Su and published by Springer Nature. This book was released on 2020-01-14 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book describes developments in the crystal growth of bulk II-VI semiconductor materials. A fundamental, systematic, and in-depth study of the physical vapor transport (PVT) growth process is the key to producing high-quality single crystals of semiconductors. As such, the book offers a comprehensive overview of the extensive studies on ZnSe and related II-VI wide bandgap compound semiconductors, such as CdS, CdTe, ZnTe, ZnSeTe and ZnSeS. Further, it shows the detailed steps for the growth of bulk crystals enabling optical devices which can operate in the visible spectrum for applications such as blue light emitting diodes, lasers for optical displays and in the mid-IR wavelength range, high density recording, and military communications. The book then discusses the advantages of crystallization from vapor compared to the conventional melt growth: lower processing temperatures, the purification process associated with PVT, and the improved surface morphology of the grown crystals, as well as the necessary drawbacks to the PVT process, such as the low and inconsistent growth rates and the low yield of single crystals. By presenting in-situ measurements of transport rate, partial pressures and interferometry, as well as visual observations, the book provides detailed insights into in the kinetics during the PVT process. This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors.

Compound Semiconductors 2001

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Publisher : CRC Press
ISBN 13 : 9780750308564
Total Pages : 908 pages
Book Rating : 4.3/5 (85 download)

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Book Synopsis Compound Semiconductors 2001 by : Y Arakawa

Download or read book Compound Semiconductors 2001 written by Y Arakawa and published by CRC Press. This book was released on 2002-09-30 with total page 908 pages. Available in PDF, EPUB and Kindle. Book excerpt: An international perspective on recent research, Compound Semiconductors 2001 provides an overview of important developments in III-V compound semiconductors, such as GaAs, InP, and GaN; II-VI compounds, such as ZnSe and CdTe; and IV-IV compounds, such as SiC and SiGe. The book contains 139 papers arranged in chapters on electronic devices, optical devices, magnetic materials, novel systems, quantum transport, optical characterization, quantum nanostructures, and material growth and characterization. The content encompasses the development of optical and electronic devices based on nitride semiconductors as well as the steady advances in traditional topics like III-V-based electronic and optical devices, growth and processing, and characterization. The book also includes novel research trends in quantum structures, such as quantum wires and dots, and spintronics, which are very promising for future developments in nanotechnology. As the primary forum for research into these materials and their device applications, this resource is an essential reference for researchers working on compound semiconductors in semiconductor physics, device physics, materials science, chemistry, and electronic and electrical engineering.

Physical Properties of III-V Semiconductor Compounds

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Author :
Publisher : John Wiley & Sons
ISBN 13 : 9780471573296
Total Pages : 342 pages
Book Rating : 4.5/5 (732 download)

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Book Synopsis Physical Properties of III-V Semiconductor Compounds by : Sadao Adachi

Download or read book Physical Properties of III-V Semiconductor Compounds written by Sadao Adachi and published by John Wiley & Sons. This book was released on 1992-11-10 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.

Dilute III-V Nitride Semiconductors and Material Systems

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Author :
Publisher : Springer
ISBN 13 : 9783540842996
Total Pages : 592 pages
Book Rating : 4.8/5 (429 download)

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Book Synopsis Dilute III-V Nitride Semiconductors and Material Systems by : Ayse Erol

Download or read book Dilute III-V Nitride Semiconductors and Material Systems written by Ayse Erol and published by Springer. This book was released on 2009-09-02 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.

Advances in Semiconductor Nanostructures

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Publisher : Elsevier
ISBN 13 : 0128105135
Total Pages : 553 pages
Book Rating : 4.1/5 (281 download)

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Book Synopsis Advances in Semiconductor Nanostructures by : Alexander V. Latyshev

Download or read book Advances in Semiconductor Nanostructures written by Alexander V. Latyshev and published by Elsevier. This book was released on 2016-11-10 with total page 553 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research. Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures Covers recent developments in the field from all over the world Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries