Growth And Characterization Of Iii V Compound Semiconductor Nanostructures By Metalorganic Chemical Vapor Deposition

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Growth and Characterization of III-V Compound Semiconductor Nanostructures by Metalorganic Chemical Vapor Deposition

Author : Ryan S. Dowdy
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (774 download)

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Book Synopsis Growth and Characterization of III-V Compound Semiconductor Nanostructures by Metalorganic Chemical Vapor Deposition by : Ryan S. Dowdy

Download or read book Growth and Characterization of III-V Compound Semiconductor Nanostructures by Metalorganic Chemical Vapor Deposition written by Ryan S. Dowdy and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Planar 110 GaAs nanowires and quantum dots grown by atmospheric MOCVD have been introduced to non-standard growth conditions such as incorporating Zn and growing them on free-standing suspended films and on 10° off-cut substrates. Zn doped nanowires exhibited periodic notching along the axis of the wire that is dependent on Zn/Ga gas phase molar ratios. Planar nanowires grown on suspended thin films give insight into the mobility of the seed particle and change in growth direction. Nanowires that were grown on the off-cut sample exhibit anti-parallel growth direction changes. Quantum dots are grown on suspended thin films and show preferential growth at certain temperatures. Envisioned nanowire applications include twin-plane superlattices, axial pn-junctions, nanowire lasers, and the modulation of nanowire growth direction against an impeding barrier and varying substrate conditions.

The Growth and Characterization of III-V Compound Semiconductor Materials by Metalorganic Chemical Vapor Deposition and Laser Photochemical Vapor Deposition

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Author : Pamela Kay York
Publisher :
ISBN 13 :
Total Pages : 268 pages
Book Rating : 4.:/5 (227 download)

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Book Synopsis The Growth and Characterization of III-V Compound Semiconductor Materials by Metalorganic Chemical Vapor Deposition and Laser Photochemical Vapor Deposition by : Pamela Kay York

Download or read book The Growth and Characterization of III-V Compound Semiconductor Materials by Metalorganic Chemical Vapor Deposition and Laser Photochemical Vapor Deposition written by Pamela Kay York and published by . This book was released on 1990 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control

Author : Kevin P. Bassett
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (774 download)

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Book Synopsis Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control by : Kevin P. Bassett

Download or read book Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control written by Kevin P. Bassett and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Metalorganic chemical vapor deposition is examined as a technique for growing compound semiconductor structures. Material analysis techniques for characterizing the quality and properties of compound semiconductor material are explained and data from recent commissioning work on a newly installed reactor at the University of Illinois is presented.

Characterization of III-V Compound Semiconductor Heterostructures Grown by Metalorganic Chemical Vapor Deposition

Author : Jongryoul Kim
Publisher :
ISBN 13 :
Total Pages : 254 pages
Book Rating : 4.:/5 (261 download)

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Book Synopsis Characterization of III-V Compound Semiconductor Heterostructures Grown by Metalorganic Chemical Vapor Deposition by : Jongryoul Kim

Download or read book Characterization of III-V Compound Semiconductor Heterostructures Grown by Metalorganic Chemical Vapor Deposition written by Jongryoul Kim and published by . This book was released on 1991 with total page 254 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-V compound semiconductor materials have had much attention because of their application to high speed electronic and optoelectronic devices. For achieving these purposes, it is required to produce high quality samples with uniform layer thickness, no defects, and abrupt interfaces. For this metalorganic chemical vapor deposition (MOCVD) is one of the most important growth methods. In this study, transmission electron microscopy (TEM) was used for the characterization of epilayer structures grown by the MOCVD technique. High resolution electron microscopy (HREM), the two beam technique and the convergent beam technique (CBED) were used. Cross sectional, plan view and cleavage samples using the ion milling or chemical etching method were used for TEM sample preparation. Tetragonal distortion occurs in the strained layer superlattice (SLS). Misfit dislocations are found above a certain layer thickness (critical thickness) and the critical thickness is related to the total strain state in SLS. Composition measurements of In$sb{rm 1-x}$Ga$sb{rm x}$As in SLS using TEM has restrictions because of the misfit strain and the similarity of atomic scattering factors of Ga and In. But a low In concentration layer can be determined from the (002) dark field intensity ratio. The interface quality of heterostructures can be distinguished by 5 beam, 9 beam or more conditions at a (100) zone axis. Digital vector pattern recognition was found to be a powerful tool for quantization of interface quality.

Growth and Characterization of III-V Semiconductors by Metalorganic Chemical Vapor Deposition Using Low Toxicity Tertiarybutylarsine and Tertiarybutylphosphine Precursors

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Author : Michael Patrick Mack
Publisher :
ISBN 13 :
Total Pages : 252 pages
Book Rating : 4.:/5 (81 download)

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Book Synopsis Growth and Characterization of III-V Semiconductors by Metalorganic Chemical Vapor Deposition Using Low Toxicity Tertiarybutylarsine and Tertiarybutylphosphine Precursors by : Michael Patrick Mack

Download or read book Growth and Characterization of III-V Semiconductors by Metalorganic Chemical Vapor Deposition Using Low Toxicity Tertiarybutylarsine and Tertiarybutylphosphine Precursors written by Michael Patrick Mack and published by . This book was released on 1993 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt:

CVD of Compound Semiconductors

Author : Anthony C. Jones
Publisher : Wiley-VCH
ISBN 13 :
Total Pages : 360 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis CVD of Compound Semiconductors by : Anthony C. Jones

Download or read book CVD of Compound Semiconductors written by Anthony C. Jones and published by Wiley-VCH. This book was released on 1997 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical growth methods of electronic materials are the keystone of microelectronic device processing. This text details the deposition methods available for different materials aiming to make the chemistry of deposition accessible to the materials scientist.

III-nitride

Author : Zhe Chuan Feng
Publisher : Imperial College Press
ISBN 13 : 1860949037
Total Pages : 442 pages
Book Rating : 4.8/5 (69 download)

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Book Synopsis III-nitride by : Zhe Chuan Feng

Download or read book III-nitride written by Zhe Chuan Feng and published by Imperial College Press. This book was released on 2006 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride semiconductor materials OCo (Al, In, Ga)N OCo are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals. Sample Chapter(s). Chapter 1: Hydride Vapor Phase Epitaxy of Group III Nitride Materials (540 KB). Contents: Hydride Vapor Phase Epitaxy of Group III Nitride Materials (V Dmitriev & A Usikov); Planar MOVPE Technology for Epitaxy of III-Nitride Materials (M Dauelsberg et al.); Close-Coupled Showerhead MOCVD Technology for the Epitaxy of GaN and Related Materials (E J Thrush & A R Boyd); Molecular Beam Epitaxy for III-N Materials (H Tang & J Webb); Growth and Properties of Nonpolar GaN Films and Heterostructures (Y J Sun & O Brandt); Indium-Nitride Growth by High-Pressure CVD: Real-Time and Ex-Situ Characterization (N Dietz); A New Look on InN (L-W Tu et al.); Growth and Optical/Electrical Properties of Al x Ga 1-x N Alloys in the Full Composition Range (F Yun); Optical Investigation of InGaN/GaN Quantum Well Structures Grown by MOCVD (T Wang); Clustering Nanostructures and Optical Characteristics in InGaN/GaN Quantum-Well Structures with Silicon Doping (Y-C Cheng et al.); III-Nitrides Micro- and Nano-Structures (H M Ng & A Chowdhury); New Developments in Dilute Nitride Semiconductor Research (W Shan et al.). Readership: Scientists; material growers and evaluators; device design, processing engineers; postgraduate and graduate students in electrical & electronic engineering and materials engineering.

Metalorganic Vapor Phase Epitaxy (MOVPE)

Author : Stuart Irvine
Publisher : John Wiley & Sons
ISBN 13 : 111931304X
Total Pages : 584 pages
Book Rating : 4.1/5 (193 download)

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Book Synopsis Metalorganic Vapor Phase Epitaxy (MOVPE) by : Stuart Irvine

Download or read book Metalorganic Vapor Phase Epitaxy (MOVPE) written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-08-27 with total page 584 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Metal-organic Chemical Vapor Deposition Growth and Characterization of Gallium Nitride Nanostructures

Author : Jie Su
Publisher :
ISBN 13 :
Total Pages : 356 pages
Book Rating : 4.:/5 (617 download)

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Book Synopsis Metal-organic Chemical Vapor Deposition Growth and Characterization of Gallium Nitride Nanostructures by : Jie Su

Download or read book Metal-organic Chemical Vapor Deposition Growth and Characterization of Gallium Nitride Nanostructures written by Jie Su and published by . This book was released on 2005 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Advances in Semiconductor Nanostructures

Author : Alexander V. Latyshev
Publisher : Elsevier
ISBN 13 : 0128105135
Total Pages : 553 pages
Book Rating : 4.1/5 (281 download)

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Book Synopsis Advances in Semiconductor Nanostructures by : Alexander V. Latyshev

Download or read book Advances in Semiconductor Nanostructures written by Alexander V. Latyshev and published by Elsevier. This book was released on 2016-11-10 with total page 553 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research. Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures Covers recent developments in the field from all over the world Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries

Atomic Layer Epitaxy of III-V Compound Semiconductors by Thermal and Laser-Assisted Metalorganic Chemical Vapor Deposition

Author : Steven P. DenBaars
Publisher :
ISBN 13 :
Total Pages : 251 pages
Book Rating : 4.:/5 (227 download)

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Book Synopsis Atomic Layer Epitaxy of III-V Compound Semiconductors by Thermal and Laser-Assisted Metalorganic Chemical Vapor Deposition by : Steven P. DenBaars

Download or read book Atomic Layer Epitaxy of III-V Compound Semiconductors by Thermal and Laser-Assisted Metalorganic Chemical Vapor Deposition written by Steven P. DenBaars and published by . This book was released on 1988 with total page 251 pages. Available in PDF, EPUB and Kindle. Book excerpt: Atomic Layer Epitaxy (ALE) is a promising variation of conventional vapor phase epitaxy which achieves uniform growth of ultra-thin epitaxial layers by a self-limiting monolayer by monolayer deposition process. By developing a new regime of metalorganic chemical vapor deposition (MOCVD) growth, in which saturated surface reactions control the growth, it is possible to alternately deposit monolayers of column III and column V elements so that only one monolayer of the III-V compound semiconductor is deposited in every cycle of the deposition. In this thesis, ALE growth of single crystal GaAs, as well as AlAs and GaAs/AlGaAs heterostructures and devices is demonstrated. We have been able to grow extremely uniform ultra-thin epitaxial layers and quantum wells (QWs) with thickness variations of less than one monolayer per cm over an entire sample in an optimized reactor using ALE. The observed dependence of the growth rate on temperature and trimethylgallium flux is modeled by first order adsorption kinetics utilizing measured reaction rate constants. The low temperature photoluminescence (PL) of ALE grown GaAs QW's exhibit narrow line intrinsic luminescence with linewidths comparable to the best reported values by conventional MOCVD. (jhd).

Growth and Characterization of Semiconductor Nanostructures for Nanoelectronics

Author : Jiebin Zhong
Publisher :
ISBN 13 :
Total Pages : 131 pages
Book Rating : 4.:/5 (81 download)

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Book Synopsis Growth and Characterization of Semiconductor Nanostructures for Nanoelectronics by : Jiebin Zhong

Download or read book Growth and Characterization of Semiconductor Nanostructures for Nanoelectronics written by Jiebin Zhong and published by . This book was released on 2011 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt: Our findings provide an in-depth understanding of semiconductor NW growth via chemical vapor deposition, and the first basis for further investigations on how to achieve controlled growth of individual and arrayed NWs, and novel device applications for switching and computation based on future development of nanoscale specific integrated circuits--NASICs.

Fabrication and Characterization of III-V Compound Semiconductor Nanostructures

Author : Marlene Zander
Publisher :
ISBN 13 :
Total Pages : 114 pages
Book Rating : 4.:/5 (855 download)

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Book Synopsis Fabrication and Characterization of III-V Compound Semiconductor Nanostructures by : Marlene Zander

Download or read book Fabrication and Characterization of III-V Compound Semiconductor Nanostructures written by Marlene Zander and published by . This book was released on 2012 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Growth and Characterization of Group III-Nitride Materials on (0001) Sapphire by Metalorganic Chemical Vapor Deposition

Author : Junko T. Kobayashi
Publisher :
ISBN 13 :
Total Pages : 232 pages
Book Rating : 4.:/5 (428 download)

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Book Synopsis Growth and Characterization of Group III-Nitride Materials on (0001) Sapphire by Metalorganic Chemical Vapor Deposition by : Junko T. Kobayashi

Download or read book Growth and Characterization of Group III-Nitride Materials on (0001) Sapphire by Metalorganic Chemical Vapor Deposition written by Junko T. Kobayashi and published by . This book was released on 1998 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Epitaxial Growth of Indium-based Compound Semiconductors by Metalorganic Chemical Vapor Deposition

Author : Jyh-Chia Chen
Publisher :
ISBN 13 :
Total Pages : 165 pages
Book Rating : 4.:/5 (256 download)

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Book Synopsis Epitaxial Growth of Indium-based Compound Semiconductors by Metalorganic Chemical Vapor Deposition by : Jyh-Chia Chen

Download or read book Epitaxial Growth of Indium-based Compound Semiconductors by Metalorganic Chemical Vapor Deposition written by Jyh-Chia Chen and published by . This book was released on 1989 with total page 165 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Two-dimensional Materials

Author : Pramoda Kumar Nayak
Publisher : BoD – Books on Demand
ISBN 13 : 9535125540
Total Pages : 282 pages
Book Rating : 4.5/5 (351 download)

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Book Synopsis Two-dimensional Materials by : Pramoda Kumar Nayak

Download or read book Two-dimensional Materials written by Pramoda Kumar Nayak and published by BoD – Books on Demand. This book was released on 2016-08-31 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: There are only a few discoveries and new technologies in materials science that have the potential to dramatically alter and revolutionize our material world. Discovery of two-dimensional (2D) materials, the thinnest form of materials to ever occur in nature, is one of them. After isolation of graphene from graphite in 2004, a whole other class of atomically thin materials, dominated by surface effects and showing completely unexpected and extraordinary properties, has been created. This book provides a comprehensive view and state-of-the-art knowledge about 2D materials such as graphene, hexagonal boron nitride (h-BN), transition metal dichalcogenides (TMD) and so on. It consists of 11 chapters contributed by a team of experts in this exciting field and provides latest synthesis techniques of 2D materials, characterization and their potential applications in energy conservation, electronics, optoelectronics and biotechnology.

Heteroepitaxial Growth of 3-5 Semiconductor Compounds by Metal-Organic Chemical Vapor Deposition for Device Applications

Author : National Aeronautics and Space Adm Nasa
Publisher : Independently Published
ISBN 13 : 9781792631511
Total Pages : 28 pages
Book Rating : 4.6/5 (315 download)

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Book Synopsis Heteroepitaxial Growth of 3-5 Semiconductor Compounds by Metal-Organic Chemical Vapor Deposition for Device Applications by : National Aeronautics and Space Adm Nasa

Download or read book Heteroepitaxial Growth of 3-5 Semiconductor Compounds by Metal-Organic Chemical Vapor Deposition for Device Applications written by National Aeronautics and Space Adm Nasa and published by Independently Published. This book was released on 2018-12-29 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this research is to design, install and operate a metal-organic chemical vapor deposition system which is to be used for the epitaxial growth of 3-5 semiconductor binary compounds, and ternary and quaternary alloys. The long-term goal is to utilize this vapor phase deposition in conjunction with existing current controlled liquid phase epitaxy facilities to perform hybrid growth sequences for fabricating integrated optoelectronic devices. Collis, Ward J. and Abul-Fadl, Ali NASA-CR-182346, NAS 1.26:182346 NAG1-403...