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Growth And Characterization Of Epitaxial Ge On As Passivated 211si By Chemical Vapor Deposition For Hgcdte Based Infrared Detector Applications
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Book Synopsis Growth and Characterization of Epitaxial Ge on As-passivated (211)Si by Chemical Vapor Deposition for HgCdTe Based Infrared Detector Applications by : Shashidhar S. Shintri
Download or read book Growth and Characterization of Epitaxial Ge on As-passivated (211)Si by Chemical Vapor Deposition for HgCdTe Based Infrared Detector Applications written by Shashidhar S. Shintri and published by . This book was released on 2011 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Epitaxial Ge/Il-V Heterostructures by : Yu Bai (Ph.D.)
Download or read book Epitaxial Ge/Il-V Heterostructures written by Yu Bai (Ph.D.) and published by . This book was released on 2011 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial Ge thin films are being investigated for many important roles in next generation microelectronics. Metal-oxide-semiconductor field effect transistors (MOSFETs) utilizing Ge channels have demonstrated dramatic performance enhancements over Si based technology. Theoretical studies have predicted that tensile strain enhances both electron and hole mobilities of Ge to levels much greater than those in unstrained or compressively-strained Ge and Si. Additionally, high enough levels of tensile strain have been postulated to alter the band structure of Ge to make Ge a direct-band-gap semiconductor. We investigated the physics and fabrication of Ge/III-V compound heterostructures, where the III-V compound material could serve as a tensile-strain-inducing template for subsequent Ge epitaxy. Through experimentation and the use of characterization techniques such as transmission electron microscopy (TEM), photoluminescence (PL), secondary ion mass spectrometry (SIMS) and spreading resistance analysis (SRA), we established correlations between the initial III-V compound surface stoichiometry and the structural, optical, and electronic properties of Ge thin films deposited on GaAs and AlAs templates. We determined that the highest structural quality Ge epitaxy initiates via a bond and exchange mechanism with the surface group III element atoms, whereas group V element atoms do not bond as effectively with Ge and thin film deposition processes that rely on Ge-group V binding processes lead to 'pitting' in Ge thin films. With the developed understanding of the growth mechanisms, we successfully fabricated high quality tensile-strained Ge thin films and quantum dots on InxGaixAs templates. Tensile strain levels as high as 0.58% in Ge thin films and 1.37% in Ge quantum dots were achieved. However, the film deposition methods that facilitated the highest structural quality also led to unintentional doping characteristics that affected the electrical and optical properties of the tensile-strained Ge epitaxial structures. Nevertheless, we designed processing sequences that led to the first demonstration of room temperature, Ge direct band gap luminescence from Ge/III-V compound heterostructures. We parlayed our advancements in Ge/Ill-V compound heterostructure fabrication to demonstrate a novel process for the fabrication of GaAs-on-Insulator (GaAsOI). The combination of GaAs/Ge/GaAs heterostructure establishment, room temperature oxide-oxide bonding methods, and XeF2-based sacrificial etching of Ge, led to the successful fabrication of GaAsOI on a small scale. We tested the implementation of our process on a full wafer scale and determined the process was kinetically limited by the lateral Ge etch process. We adapted the Deal-Grove oxidation model to establish a model to understand the relationships between lateral etch rate, lateral etch distance, release layer thickness, channel displacements, and the radius of curvature of the donor wafer. Our Ge/III-V compound heterostructure research advanced the understanding and stateof- the-art processing of such structures. We established methods and elucidated challenges for future research targeted toward demonstrating novel Ge-based devices and advanced large-diameter engineered substrates.
Book Synopsis Structural Characterization of Epitaxial Layers for Infrared Detectors by :
Download or read book Structural Characterization of Epitaxial Layers for Infrared Detectors written by and published by . This book was released on 1995 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt: UHV/CVD is a growth technique highly suitable for deposition of Ge(x)Si(1-x) heterostructures for long-wavelength infrared detectors. We have used transmission electron microscopy to determine favorable conditions for the growth of these structures. Multiple quantum well structures can be grown with excellent quality without any evidence of nonplanar growth while heterojunction internal photoemission structures incorporated thicker Ge(x)Si(1-x) layers do exhibit nonplanar growth. A modest decrease in growth temperature to 550 deg C is sufficient to solve the problem. jg p.1.
Book Synopsis Hot-wall Low Pressure Chemical Vapor Deposition Growth and Characterization of GaN and Epitaxial AlN on Si (111) by : Karen Heinselman
Download or read book Hot-wall Low Pressure Chemical Vapor Deposition Growth and Characterization of GaN and Epitaxial AlN on Si (111) written by Karen Heinselman and published by . This book was released on 2016 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: The physical and electronic properties of aluminum nitride (AlN) have made it attractive for a wide variety of applications, including bulk and surface acoustic wave (B/SAW) resonators and thin film dielectric coatings. Due to its wide band gap of 6.2 eV, AlN is a good insulator. The chemical durability of AlN makes it appealing for extreme environmental conditions. Its thermal expansion coefficient is similar to those of other semiconductor materials such as Si and SiC, making it appropriate for use in high temperature applications as well. In this work, we demonstrate the growth of AlN and GaN thin films using hotwall low pressure chemical vapor deposition (LPCVD) in order to obtain epitaxial AlN growth with a parallelizable, inexpensive method (relative to the current epitaxial growth method, molecular beam epitaxy). This dissertation demonstrates the growth of aluminum nitride thin films (between 70 nm and 1 [MICRO SIGN]m in thickness) on Si (111) substrates using hot-wall low pressure chemical vapor deposition (LPCVD) at 1000 ? C and 2 torr. Prior to growth, the substrates were pretreated in situ with dichlorosilane cleaning step, the parameters of which were varied to optimize the c-axis alignment of the grown thin film AlN. In addition, nucleation time for the aluminum precursor, trimethylaluminum (TMAl) was varied and optimized. X-ray diffraction (XRD) was performed on the samples for characterization. With the optimal nucleation time and dichlorosilane pretreatment, the 2[theta]-[omega] FWHM of the resulting AlN film was 1160 arcsec, and the FWHM of the [omega] rocking curve was 1.6? . These optimal parameters exhibited epitaxial AlN peaks aligned with the Si (111) substrate when characterized using a tilted phi scan XRD technique. Transmission electron microscopy (TEM) provides a second epitaxial alignment confirmation. Backside etching of the Si (111) substrate to create freestanding AlN thin film drums is demonstrated. This access to the back side of the AlN thin films allows the fabrication of future bulk acoustic wave (BAW) resonator devices and testing the piezoelectric response of these materials. For alternate applications, GaN was grown on AlN buffer layers on Si (111) substrates using hot-wall LPCVD. The resulting film was c-axis aligned, with an XRD FWHM of 1420 arcsec for the GaN (001) 2[theta]-[omega] peak, and the FWHM of the rocking curve was 3.8? . Capacitance-voltage data on the grown GaN on AlN indicate n-type films with residual electron concentrations of roughly 1017 cm[-]3 .
Book Synopsis Epitaxial Growth of Ge on In0.51Ga0.49P/GaAs (100) Substrate by Ultra-high Vacuum Chemical Vapor Deposition by :
Download or read book Epitaxial Growth of Ge on In0.51Ga0.49P/GaAs (100) Substrate by Ultra-high Vacuum Chemical Vapor Deposition written by and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth of HgCdTe epitaxial layers by metal organic chemical vapor deposition by : Toshio Kanno
Download or read book Growth of HgCdTe epitaxial layers by metal organic chemical vapor deposition written by Toshio Kanno and published by . This book was released on 1991 with total page 18 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Crystallographic and electrical characterization of epitaxial GE[subscript x]Si[subscript 1-x]/Si and in-situ doped films grown by remote plasma chemical vapor deposition by : Rong-Zhen Qian
Download or read book Crystallographic and electrical characterization of epitaxial GE[subscript x]Si[subscript 1-x]/Si and in-situ doped films grown by remote plasma chemical vapor deposition written by Rong-Zhen Qian and published by . This book was released on 1993 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Metalorganic Chemical Vapor Deposition of II-VI Semiconductors for Surface Passivation of HgCdTe IR Detectors by : Sneha Banerjee
Download or read book Metalorganic Chemical Vapor Deposition of II-VI Semiconductors for Surface Passivation of HgCdTe IR Detectors written by Sneha Banerjee and published by . This book was released on 2016 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Epitaxial Growth and Characterization of Si(1-x)Ge(x) Materials and Devices by : Pallab Bhattacharya
Download or read book Epitaxial Growth and Characterization of Si(1-x)Ge(x) Materials and Devices written by Pallab Bhattacharya and published by . This book was released on 1997 with total page 38 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objectives of this project were the understanding of heteroepitaxial growth of SiGe/Si, dislocation control for highly mismatched layers, and the application of such heterostructures to high speed microelectronics and optoelectronics. A new technique of dislocation control, using a low-temperature Si buffer layer, has been identified. SiGe/Si heterostructure FETs have been fabricated, using this technique. Heterostructure bipolar transistors have been utilized to realize the first SiGe-based integrated photoreceivers. The electro-optic coefficients in SiGe/Si quantum wells have also been measured. Modulators, whose operation principle is based on the small conduction band offset, in this heterostructure, has been demonstrated theoretically and experimentally, for the first time. Theoretical work, involving a charge control study of the interfacial effects in p-MOSFETs.
Book Synopsis Characterization of HgCdTe/CdZnTe Epitaxial Materials for Infrared Detectors by : Changzhen Wang
Download or read book Characterization of HgCdTe/CdZnTe Epitaxial Materials for Infrared Detectors written by Changzhen Wang and published by . This book was released on 2007 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization and reduction of defects in epitaxial Si and Si[subscript 1-x] Ge[subscript x]/Si films grown by remote plasma-enhanced chemical vapor deposition by : David Stephen Kinosky
Download or read book Characterization and reduction of defects in epitaxial Si and Si[subscript 1-x] Ge[subscript x]/Si films grown by remote plasma-enhanced chemical vapor deposition written by David Stephen Kinosky and published by . This book was released on 1993 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Epitaxial Growth of Ge on Si by Magnetron Sputtering by : Ziheng Liu
Download or read book Epitaxial Growth of Ge on Si by Magnetron Sputtering written by Ziheng Liu and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial growth of Ge on Si has received considerable attention for its compatibility with Si process flow and the scarcity of Ge compared with Si. Applications that drive the efforts for integrating Ge with Si include high mobility channel in metal-oxide-semiconductor field-effect transistors, infrared photodetector in Si-based optical devices, and template for III-V growth to fabricate high-efficiency solar cells. Epitaxy Ge on Si can be used as a virtual Ge substrate for fabrication of III-V solar cells, which has advantages of superior mechanical properties and low cost over Ge wafers. This work investigates the epitaxial growth of Ge on Si using magnetron sputtering, which is an environment-friendly, inexpensive, high throughput, and simple deposition technique. The effects of substrate temperature on the properties of Ge are analyzed. A novel method to epitaxially grow Ge on Si by magnetron sputtering at low temperature is developed using one-step aluminum-assisted crystallization. By applying an in-situ low temperature (50-150°C) heat treatment in between Al and Ge sputter depositions, the epitaxial growth of Ge on Si is achieved. This method significantly lowers the required temperature for and therefore the cost of epitaxial growth of Ge on Si.
Book Synopsis CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications by :
Download or read book CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications written by and published by Elsevier. This book was released on 2009-11-11 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: Almost thirty years after the remarkable monograph of K. Zanio and the numerous conferences and articles dedicated since that time to CdTe and CdZnTe, after all the significant progresses in that field and the increasing interest in these materials for several extremely attractive industrial applications, such as nuclear detectors and solar cells, the edition of a new enriched and updated monograph dedicated to these two very topical II-VI semiconductor compounds, covering all their most prominent, modern and fundamental aspects, seemed very relevant and useful. Detailed coverage of the main topics associated with the very topical II-VI semiconductor compound CdTe and its alloy CZT Review of the CdTe recent developments Fundamental background of many topics clearly introduced and exposed
Book Synopsis Chemical Vapor Deposition of Metastable Germanium Based Semiconductors for Optoelectronic Applications by : Charutha Lasitha Senaratne
Download or read book Chemical Vapor Deposition of Metastable Germanium Based Semiconductors for Optoelectronic Applications written by Charutha Lasitha Senaratne and published by . This book was released on 2016 with total page 253 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optoelectronic and microelectronic applications of germanium-based materials have received considerable research interest in recent years. A novel method for Ge on Si heteroepitaxy required for such applications was developed via molecular epitaxy of Ge5H12. Next, As(GeH3)3, As(SiH3)3, SbD3, S(GeH3)2 and S(SiH3)2 molecular sources were utilized in degenerate n-type doping of Ge. The epitaxial Ge films produced in this work incorporate donor atoms at concentrations above the thermodynamic equilibrium limits. The donors are nearly fully activated, and led to films with lowest resistivity values thus far reported. Band engineering of Ge was achieved by alloying with Sn. Epitaxy of the alloy layers was conducted on virtual Ge substrates, and made use of the germanium hydrides Ge2H6 and Ge3H8, and the Sn source SnD4. These films exhibit stronger emission than equivalent material deposited directly on Si, and the contributions from the direct and indirect edges can be separated. The indirect-direct crossover composition for Ge1-ySny alloys was determined by photoluminescence (PL). By n-type doping of the Ge1-ySny alloys via P(GeH3)3, P(SiH3)3 and As(SiH3)3, it was possible to enhance photoexcited emission by more than an order-of-magnitude.The above techniques for deposition of direct gap Ge1-ySny alloys and doping of Ge were combined with p-type doping methods for Ge1-ySny using B2H6 to fabricate pin heterostructure diodes with active layer compositions up to y=0.137. These represent the first direct gap light emitting diodes made from group IV materials. The effect of the single defected n-i interface in a n-Ge/i-Ge1-ySny/p-Ge1-zSnz architecture on electroluminescence (EL) was studied. This led to lattice engineering of the n-type contact layer to produce diodes of n-Ge1-xSnx/i-Ge1-ySny/p-Ge1-zSnz architecture which are devoid of interface defects and therefore exhibit more efficient EL than the previous design. Finally, n-Ge1-ySny/p-Ge1-zSnz pn junction devices were synthesized with varying composition and doping parameters to investigate the effect of these properties on EL.
Book Synopsis Low-temperature Hetero-epitaxial Growth of Ge on Si by High Density Plasma Chemical Vapor Deposition by :
Download or read book Low-temperature Hetero-epitaxial Growth of Ge on Si by High Density Plasma Chemical Vapor Deposition written by and published by . This book was released on 2006 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Characterization of Epitaxial Layers of Ge on Si Substrates by :
Download or read book Growth and Characterization of Epitaxial Layers of Ge on Si Substrates written by and published by . This book was released on 1987 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin single crystalline layers of Ge with atomically sharp boundaries have been formed epitaxially on (100) Si substrates. This was done by 74Ge ion implantation into Si followed by steam oxidation. Using both Rutherford backscattering spectroscopy (RBS) and transmission electron microscopy (TEM), we have found that a Ge layer forms as a result of Ge segregated at the moving SiO2 interface during steam oxidation. For a SiO2 layer that has swept through the implanted region, essentially all of the Ge is snow-ploughed and no Ge is lost to the oxide layer. The Ge layers and its two bounding interfaces, i.e., Ge/SiO2 and Ge/Si, have been characterized as a function of the implantation dose and energy. The thickness of the Ge layer formed is dependent on the implantation dose. Thicknesses from a fraction of a monolayer to greater than 50 monolayers of Ge can be formed on Si by this mechanism. Initially the Ge layer forms a coherent interface with the underlying Si with no misfit dislocations, and misfit dislocations only appear as the thickness of the film is increased.
Book Synopsis Addition of Ge to the H-Si-C Chemical System During SiC Epitaxy by : Kassem Alassaad
Download or read book Addition of Ge to the H-Si-C Chemical System During SiC Epitaxy written by Kassem Alassaad and published by . This book was released on 2014 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work, addition of GeH4 gas to the classical SiH4+C3H8 precursor system is reported for the epitaxial growth of SiC by chemical vapor deposition. The main objective of this fundamental study is to explore the influence of Ge presence within SiC lattice or at its surface on the overall growth mechanism and the grown layer quality and properties. Epitaxial growth was performed either on high off axis (8 and 4°) or low off-axis (1° and on-axis) 4H-SiC substrate in the temperature range 1450-1600°C. On high off-axis seeds, we discussed the impact of Ge atoms on the homoepitaxial layer quality from surface morphological and structural point of view. Ge incorporation mechanism in these layers as a function of growth parameters was also investigated. The Ge incorporation can be controlled from 1x1016 - 7x1018 at.cm-3. Moreover, a clear link between n-type doping and Ge incorporation was found. Electrical characterizations of these layers show an improvement of electron mobility and conductivity of 4H-SiC material while the performances of Schottky contacts were not negatively impacted. On low off-axis seeds, GeH4 was added to the gas phase only during the surface preparation step, i.e. before starting the SiC growth. It was found that there is a conditions window (temperature and GeH4 flux) for which heteroepitaxial 3C-SiC twin free layers can be grown. Interpretation of the results allowed proposing a mechanism leading to twin boundary elimination. It involves a transient homoepitaxial growth step, favored by the presence of liquid Ge at the surface, followed by 3C nucleation when large terraces are formed by step faceting. Electrical characteristics of the twin free 3C-SiC layers were studied using conductive atomic force microscopy (c-AFM).
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