Gap Heteroepitaxy On Si100

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GaP Heteroepitaxy on Si(100)

Author : Henning Döscher
Publisher : Springer Science & Business Media
ISBN 13 : 3319028804
Total Pages : 155 pages
Book Rating : 4.3/5 (19 download)

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Book Synopsis GaP Heteroepitaxy on Si(100) by : Henning Döscher

Download or read book GaP Heteroepitaxy on Si(100) written by Henning Döscher and published by Springer Science & Business Media. This book was released on 2013-11-29 with total page 155 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroepitaxial growth surface provides quantitative optical in situ access to one of the most notorious defect mechanisms, even in the vapor phase ambient common for compound semiconductor technology. Precise control over the surface structure of the Si(100) substrates prior to III-V nucleation prevents the formation of antiphase domains. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration.

Gap Heteroepitaxy on Si(100)

Author : Henning Doscher
Publisher :
ISBN 13 : 9783319028811
Total Pages : 160 pages
Book Rating : 4.0/5 (288 download)

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Book Synopsis Gap Heteroepitaxy on Si(100) by : Henning Doscher

Download or read book Gap Heteroepitaxy on Si(100) written by Henning Doscher and published by . This book was released on 2013-12-31 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Metalorganic Vapor Phase Epitaxy (MOVPE)

Author : Stuart Irvine
Publisher : John Wiley & Sons
ISBN 13 : 1119313031
Total Pages : 907 pages
Book Rating : 4.1/5 (193 download)

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Book Synopsis Metalorganic Vapor Phase Epitaxy (MOVPE) by : Stuart Irvine

Download or read book Metalorganic Vapor Phase Epitaxy (MOVPE) written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-09-04 with total page 907 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Physics and Technology of Semiconductor Thin Film-Based Active Elements and Devices

Author : Halyna Khlyap
Publisher : Bentham Science Publishers
ISBN 13 : 1608050211
Total Pages : 134 pages
Book Rating : 4.6/5 (8 download)

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Book Synopsis Physics and Technology of Semiconductor Thin Film-Based Active Elements and Devices by : Halyna Khlyap

Download or read book Physics and Technology of Semiconductor Thin Film-Based Active Elements and Devices written by Halyna Khlyap and published by Bentham Science Publishers. This book was released on 2009-04-03 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This well organized reference book covers the newest and most important practically applicable results in thin film-based semiconductor (A2B6-A4B6 and chalcogenide) sensors, heterojunction-based active elements and other devices. This book is written for "

Semiconductor Nanodevices

Author : David Ritchie
Publisher : Elsevier
ISBN 13 : 0128220848
Total Pages : 500 pages
Book Rating : 4.1/5 (282 download)

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Book Synopsis Semiconductor Nanodevices by : David Ritchie

Download or read book Semiconductor Nanodevices written by David Ritchie and published by Elsevier. This book was released on 2021-10-24 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Nanodevices: Physics, Technology and Applications explores recent advances in the field. The behaviour of these devices is controlled by regions of nanoscale dimensions which typically determine the local density of electronic states and lead to the observation of a range of quantum effects with significant potential for exploitation. The book opens with an introduction describing the development of this research field over the past few decades which contrasts quantum-controlled devices to conventional nanoscale electronic devices where an emphasis has often been placed on minimising quantum effects. This introduction is followed by seven chapters describing electrical nanodevices and five chapters describing opto-electronic nanodevices; individual chapters review important recent advances. These chapters include specific fabrication details for the structures and devices described as well as a discussion of the physics made accessible. It is an important reference source for physicists, materials scientists and engineers who want to learn more about how semiconductor-based nanodevices are being developed for both science and potential industrial applications. The section on electrical devices includes chapters describing the study of electron correlation effects using transport in quantum point contacts and tunnelling between one-dimensional wires; the high-frequency pumping of single electrons; thermal effects in quantum dots; the use of silicon quantum dot devices for qubits and quantum computing; transport in topological insulator nanoribbons and a comprehensive discussion of noise in electrical nanodevices. The optical device section describes the use of self-assembled III-V semiconductor nanostructures embedded in devices for a range of applications, including quantum dots for single and entangled photon sources, quantum dots and nanowires in lasers and quantum dots in solar cells. Explores the major industrial applications of semiconductor nanodevices Explains fabrication techniques for the production of semiconductor nanodevices Assesses the challenges for the mass production of semiconductor nanodevices

Silicon Molecular Beam Epitaxy

Author : E. Kasper
Publisher : CRC Press
ISBN 13 : 1351093525
Total Pages : 411 pages
Book Rating : 4.3/5 (51 download)

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Book Synopsis Silicon Molecular Beam Epitaxy by : E. Kasper

Download or read book Silicon Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.

Issues in Extreme Conditions Technology Research and Application: 2011 Edition

Author :
Publisher : ScholarlyEditions
ISBN 13 : 1464965684
Total Pages : 673 pages
Book Rating : 4.4/5 (649 download)

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Book Synopsis Issues in Extreme Conditions Technology Research and Application: 2011 Edition by :

Download or read book Issues in Extreme Conditions Technology Research and Application: 2011 Edition written by and published by ScholarlyEditions. This book was released on 2012-01-09 with total page 673 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues in Extreme Conditions Technology Research and Application: 2011 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about Extreme Conditions Technology Research and Application. The editors have built Issues in Extreme Conditions Technology Research and Application: 2011 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Extreme Conditions Technology Research and Application in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in Extreme Conditions Technology Research and Application: 2011 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.

Heteroepitaxy of Semiconductors

Author : John E. Ayers
Publisher : CRC Press
ISBN 13 : 1482254360
Total Pages : 660 pages
Book Rating : 4.4/5 (822 download)

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Book Synopsis Heteroepitaxy of Semiconductors by : John E. Ayers

Download or read book Heteroepitaxy of Semiconductors written by John E. Ayers and published by CRC Press. This book was released on 2016-10-03 with total page 660 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.

The Physics of Semiconductor Devices

Author : Rajendra Singh
Publisher : Springer Nature
ISBN 13 : 9819715717
Total Pages : 406 pages
Book Rating : 4.8/5 (197 download)

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Book Synopsis The Physics of Semiconductor Devices by : Rajendra Singh

Download or read book The Physics of Semiconductor Devices written by Rajendra Singh and published by Springer Nature. This book was released on with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Japanese Journal of Applied Physics

Author :
Publisher :
ISBN 13 :
Total Pages : 1140 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Japanese Journal of Applied Physics by :

Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 2007 with total page 1140 pages. Available in PDF, EPUB and Kindle. Book excerpt:

JJAP

Author :
Publisher :
ISBN 13 :
Total Pages : 1092 pages
Book Rating : 4.X/5 (2 download)

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Book Synopsis JJAP by :

Download or read book JJAP written by and published by . This book was released on 1994 with total page 1092 pages. Available in PDF, EPUB and Kindle. Book excerpt:

In Situ Real-Time Characterization of Thin Films

Author : Orlando Auciello
Publisher : John Wiley & Sons
ISBN 13 : 9780471241416
Total Pages : 282 pages
Book Rating : 4.2/5 (414 download)

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Book Synopsis In Situ Real-Time Characterization of Thin Films by : Orlando Auciello

Download or read book In Situ Real-Time Characterization of Thin Films written by Orlando Auciello and published by John Wiley & Sons. This book was released on 2001 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: An in-depth look at the state of the art of in situ real-time monitoring and analysis of thin films With thin film deposition becoming increasingly critical in the production of advanced electronic and optical devices, scientists and engineers working in this area are looking for in situ, real-time, structure-specific analytical tools for characterizing phenomena occurring at surfaces and interfaces during thin film growth. This volume brings together contributed chapters from experts in the field, covering proven methods for in situ real-time analysis of technologically important materials such as multicomponent oxides in different environments. Background information and extensive references to the current literature are also provided. Readers will gain a thorough understanding of the growth processes and become acquainted with both emerging and more established methods that can be adapted for in situ characterization. Methods and their most useful applications include: * Low-energy time-of-flight ion scattering and direct recoil spectroscopy (TOF-ISRAS) for studying multicomponent oxide film growth processes * Reflection high-energy electron diffraction (RHEED) for determining the nature of chemical reactions at film surfaces * Spectrometric ellipsometry (SE) for use in the analysis of semiconductors and other multicomponent materials * Reflectance spectroscopy and transmission electron microscopy for monitoring epitaxial growth processes * X-ray fluorescence spectroscopy for studying surface and interface structures * And other cost-effective techniques for industrial application

Thin Films: Heteroepitaxial Systems

Author : Amy W K Liu
Publisher : World Scientific
ISBN 13 : 9814496405
Total Pages : 706 pages
Book Rating : 4.8/5 (144 download)

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Book Synopsis Thin Films: Heteroepitaxial Systems by : Amy W K Liu

Download or read book Thin Films: Heteroepitaxial Systems written by Amy W K Liu and published by World Scientific. This book was released on 1999-06-01 with total page 706 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heteroepitaxial films are commonplace among today's electronic and photonic devices. The realization of new and better devices relies on the refinement of epitaxial techniques and improved understanding of the physics underlying epitaxial growth. This book provides an up-to-date report on a wide range of materials systems. The first half reviews metallic and dielectric thin films, including chapters on metals, rare earths, metal-oxide layers, fluorides, and high-Tc superconductors. The second half covers semiconductor systems, reviewing developments in group-IV, arsenide, phosphide, antimonide, nitride, II-VI and IV-VI heteroepitaxy. Topics important to several systems are covered in chapters on atomic processes, ordering and growth dynamics.

Dissertation Abstracts International

Author :
Publisher :
ISBN 13 :
Total Pages : 790 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Dissertation Abstracts International by :

Download or read book Dissertation Abstracts International written by and published by . This book was released on 2006 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Controlling Si(111) and Si(100) Surfaces for Subsequent GaP Heteroepitaxy in CVD Ambient

Author : Agnieszka Paszuk
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (137 download)

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Book Synopsis Controlling Si(111) and Si(100) Surfaces for Subsequent GaP Heteroepitaxy in CVD Ambient by : Agnieszka Paszuk

Download or read book Controlling Si(111) and Si(100) Surfaces for Subsequent GaP Heteroepitaxy in CVD Ambient written by Agnieszka Paszuk and published by . This book was released on 2017 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Die Integration von III-V-Unterzellen auf einem kostengünstigen aktiven Si-Substrat hat das Potential, Mehrfach-Solarzellen mit einem hohen Konversionswirkungsgrad zu ermöglichen. Das Wachstum von III-V-Materialien mit niedriger Defektdichte auf Si ist schwierig aufgrund der unterschiedlichen Kristallstrukturen. Dank der geringen Gitterfehlanpassung kann eine GaP Nukleationsschicht, die auf dem Si Substrat aufgewachsen wird, den Übergang von Si zu anderen III-V Materialien erleichtern. Solche pseudomorphen GaP/Si-Quasisubstrate ermöglichen die anschließende Integration planarer oder Nanodraht (ND)-basierter III-V-Strukturen. Die planaren Strukturen werden für gewöhnlich in [100]-Orientierung gewachsen, wohingegen ND-Strukturen bevorzugt entlang der [111]-Richtung wachsen. Die vorliegende Arbeit untersucht die Präparation der Si Unterzelle und der pseudomorphen GaP/Si Quasisubstrate mittels metallorganischer chemischer Gasphasenabscheidung (MOCVD). Auf der Si(100) Oberfläche verursachen Einfachstufen beim heteroepitaktischen Wachstum von III-V-Schichten die Entstehung von Antiphasendomänen, wohingegen bei Si(111)-Substraten die Kontrolle der Polarität der GaP-Schichten entscheidend ist, um das senkrechte Wachstum von ND zu erreichen. MOCVD-Wachstumsprozesse sind sehr komplex aufgrund der Anwesenheit von metallorganischen Ausgangsstoffen, des Prozessgases (H2), welches einen starken Einfluss auf die Stufenformation des Si hat, und wegen des allgegenwertigen Wechselspiels zwischen energetischen und kinetischen Prozessen. Um die präzise Präparation der Si-Oberfläche kontrollieren zu können verwenden wir in situ Reflexions-Anisotropie-Spektroskopie (RAS) und korrelieren Signale, welche an entscheidenden Prozessschritten auftreten, mit Ultrahochvakuum (UHV)-basierten Oberflächen-empfindlichen Methoden. Beide Si-Oberflächen wechselwirken stark mit dem H2-Prozessgas, was zu einer Terminierung der Oberflächen mit Monohydrid führt. Der Kollektor in Si(100) und Si(111) wird durch Tempern unter TBP oder TBAs Precursor gebildet, welches zu einer Diffusion von P oder As in Si führt. Nach der Kollektor-Bildung weiteres Tempern in H2 ist notwendig, um für die GaP Nukleation wieder eine glatte Oberfläche (epiready) zu generieren. Um GaP(111) mit B-Typ-Polarität zu erzielen, was für vertikales III-V ND-Wachstum notwendig ist, ist eine Modifizierung der H-terminierten Si-Oberfläche nötig. Durch eine gezielte Terminierung der Si-Oberfläche mit As oder H2 lässt sich die Polarität des GaP-Films kontrollieren. Im Falle von Si(100) 6° kann mittels in situ RAS die Dimer-Ausrichtung der Majoritätsdomäne auf der Oberfläche in Abhängigkeit der As-Quelle (Asx oder TBAs) und der Abkühlprozedur kontrolliert werden. Dies erlaubt die gezielte Einstellung der Untergitterausrichtung der nachfolgend gewachsenen, eindomänigen GaP/Si(100)-Schicht. Somit können sowohl für planare als auch für ND-basierte photovoltaische Mehrfachabsorber-Strukturen geeignete GaP/Si Quasisubstrate mit wohldefinierten Grenzflächen und einem p-n-Übergang im Si kontrolliert in der MOCVD präpariert werden.

Crystal Properties and Preparation

Author :
Publisher :
ISBN 13 :
Total Pages : 1018 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Crystal Properties and Preparation by :

Download or read book Crystal Properties and Preparation written by and published by . This book was released on 1986 with total page 1018 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Molecular Beam Epitaxy and Heterostructures

Author : L.L. Chang
Publisher : Springer Science & Business Media
ISBN 13 : 940095073X
Total Pages : 718 pages
Book Rating : 4.4/5 (9 download)

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Book Synopsis Molecular Beam Epitaxy and Heterostructures by : L.L. Chang

Download or read book Molecular Beam Epitaxy and Heterostructures written by L.L. Chang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt: The NATO Advanced Study Institute on "Molecular Beam Epitaxy (MBE) and Heterostructures" was held at the Ettore Majorana Center for Scientific Culture, Erice, Italy, on March 7-19, 1983, the second course of the International School of Solid-State Device Re search. This volume contains the lectures presented at the Institute. Throughout the history of semiconductor development, the coupling between processing techniques and device structures for both scientific investigations and technological applications has time and again been demonstrated. Newly conceived ideas usually demand the ultimate in existing techniques, which often leads to process innova tions. The emergence of a process, on the other hand, invariably creates opportunities for device improvement and invention. This intimate relationship between the two has most recently been witnessed in MBE and heterostructures, the subject of this Institute. This volume is divided into several sections. Chapter 1 serves as an introduction by providing a perspective of the subject. This is followed by two sections, each containing four chapters, Chapters 2-5 addressing the principles of the MBE process and Chapters 6-9 describ ing its use in the growth of a variety of semiconductors and heteros tructures. The next two sections, Chapters to-II and Chapters 12-15, treat the theory and the electronic properties of the heterostructures, respectively. The focus is on energy quantization of the two dimensional electron system. Chapters 16-17 are devoted to device structures, including both field-effect transistors and lasers and detec tors.