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Gan And Related Materials Ii
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Book Synopsis GaN and Related Materials II by : Stephen J. Pearton
Download or read book GaN and Related Materials II written by Stephen J. Pearton and published by CRC Press. This book was released on 2000-10-31 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first GaN and Related Materials covered topics such as a historical survey of past research, optical electrical and microstructural characterization, theory of defects, bulk crystal growth, and performance of electronic and photonic devices. This new volume updates old research where warranted and explores new areas such as UV detectors, microwave electronics, and Er-doping. This unique follow-up features contributions from leading experts that cover the full spectrum of growth.
Book Synopsis GaN and Related Materials II by : Stephen J. Pearton
Download or read book GaN and Related Materials II written by Stephen J. Pearton and published by CRC Press. This book was released on 2000-10-31 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first GaN and Related Materials covered topics such as a historical survey of past research, optical electrical and microstructural characterization, theory of defects, bulk crystal growth, and performance of electronic and photonic devices. This new volume updates old research where warranted and explores new areas such as UV detectors, microw
Book Synopsis GaN and Related Materials by : Stephen J. Pearton
Download or read book GaN and Related Materials written by Stephen J. Pearton and published by CRC Press. This book was released on 2021-10-08 with total page 553 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.
Book Synopsis Oxide and Nitride Semiconductors by : Takafumi Yao
Download or read book Oxide and Nitride Semiconductors written by Takafumi Yao and published by Springer Science & Business Media. This book was released on 2009-03-20 with total page 525 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a unique book devoted to the important class of both oxide and nitride semiconductors. It covers processing, properties and applications of ZnO and GaN. The aim of this book is to provide the fundamental and technological issues for both ZnO and GaN.
Book Synopsis GaN and Related Materials by : Stephen J. Pearton
Download or read book GaN and Related Materials written by Stephen J. Pearton and published by CRC Press. This book was released on 1997-10-29 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.
Book Synopsis Silicon-Germanium Carbon Alloys by : S. Pantellides
Download or read book Silicon-Germanium Carbon Alloys written by S. Pantellides and published by CRC Press. This book was released on 2002-07-26 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor. Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers. Bandgaps can be changed, strains can be tuned, and properties can be tailored. This is catnip to the materials scientist. The wide array of techniques applied here to the SiGeC system bear testimony to the ingenious approaches now available for mastering the complexities of new materials
Book Synopsis GaN and Related Materials for Device Applications by : Stephen J. Pearton
Download or read book GaN and Related Materials for Device Applications written by Stephen J. Pearton and published by . This book was released on 1997 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance by : Robert F Davis
Download or read book Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance written by Robert F Davis and published by World Scientific. This book was released on 2004-05-07 with total page 295 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
Book Synopsis Handbook of Zinc Oxide and Related Materials by : Zhe Chuan Feng
Download or read book Handbook of Zinc Oxide and Related Materials written by Zhe Chuan Feng and published by Taylor & Francis. This book was released on 2012-09-26 with total page 447 pages. Available in PDF, EPUB and Kindle. Book excerpt: Through their application in energy-efficient and environmentally friendly devices, zinc oxide (ZnO) and related classes of wide gap semiconductors, including GaN and SiC, are revolutionizing numerous areas, from lighting, energy conversion, photovoltaics, and communications to biotechnology, imaging, and medicine. With an emphasis on engineering a
Book Synopsis Semiconductor Quantum Well Intermixing by : J. T. Lie
Download or read book Semiconductor Quantum Well Intermixing written by J. T. Lie and published by CRC Press. This book was released on 2000-01-18 with total page 712 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Quantum Well Intermixing is an international collection of research results dealing with several aspects of the diffused quantum well (DFQW), ranging from Physics to materials and device applications. The material covered is the basic interdiffusion mechanisms of both cation and anion groups as well as the properties of band structure
Download or read book GaN and Related Alloys written by and published by . This book was released on 2004 with total page 872 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis GaN, AIN, InN and Related Materials: Volume 892 by : Martin Kuball
Download or read book GaN, AIN, InN and Related Materials: Volume 892 written by Martin Kuball and published by . This book was released on 2006-03-27 with total page 896 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Book Synopsis Gallium Nitride by : Kiera Olivia Peak
Download or read book Gallium Nitride written by Kiera Olivia Peak and published by Nova Science Publishers. This book was released on 2014 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium nitride (GaN), a member of the family of III-V semiconductor compounds, has been investigated intensively and have found extensive applications. Recent development has suggested that GaN may be used as an excellent host material for light-emitting devices (LEDs) that operate in the blue and ultraviolet region, due to its wide and direct band gap. Nano-materials often present novel properties that are different from the corresponding bulk materials due to their unique structures, high specific surface area and quantum confinement effects. This book discusses several topics on the structure, thermal properties and applications of GaN. Some of these topics include the effects of radiation damage in GaN and and related materials; low-dimensional GaN; structural and dielectric properties of the GaN and silica nanoparticles investigated by molecular dynamics; and GaN bulk and nanostructures for spintronic application.
Book Synopsis Power GaN Devices by : Matteo Meneghini
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Book Synopsis GaN and ZnO-based Materials and Devices by : Stephen Pearton
Download or read book GaN and ZnO-based Materials and Devices written by Stephen Pearton and published by Springer Science & Business Media. This book was released on 2012-01-14 with total page 497 pages. Available in PDF, EPUB and Kindle. Book excerpt: The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.
Book Synopsis Gallium Nitride and Related Materials II: Volume 468 by : C. R. Abernathy
Download or read book Gallium Nitride and Related Materials II: Volume 468 written by C. R. Abernathy and published by Materials Research Society. This book was released on 1997-08-13 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book from MRS dedicated to III-Nitrides, focuses on developments in AlN, GaN, InN and their alloys that are now finding application in short-wavelength lasers (~400nm, cw at room temperature) and high-power electronics (2.8W/mm at GHz). Experts from fields including crystal growth, condensed matter theory, source chemistry, device processing and device design come together in the volume to address issues of both scientific and technological relevance. And while much of the book reports on advances in material preparation and the understanding of defect issues, similar advances in material and device processing are also reported. Topics include: growth and doping; substrates and substrate effects; characterization; processing and device performance and design.
Book Synopsis Properties of Advanced Semiconductor Materials by : Michael E. Levinshtein
Download or read book Properties of Advanced Semiconductor Materials written by Michael E. Levinshtein and published by John Wiley & Sons. This book was released on 2001-02-21 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material. * Reviews traditional semiconductor materials as well as new, advanced semiconductors. * Essential authoritative handbook on the properties of semiconductor materials.
