Author : Qingyun Xie (S.M.)
Publisher :
ISBN 13 :
Total Pages : 88 pages
Book Rating : 4.:/5 (119 download)
Book Synopsis Gallium Nitride Electronics for Cryogenic and High Frequency Applications by : Qingyun Xie (S.M.)
Download or read book Gallium Nitride Electronics for Cryogenic and High Frequency Applications written by Qingyun Xie (S.M.) and published by . This book was released on 2020 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt: Cryogenic and high frequency electronics have received renewed attention due to their application in the control and readout electronics of quantum computing systems, among others. The potential of AlGaN/GaN HEMTs for cryogenic high frequency application was explored. The performance of AlGaN/GaN HEMTs with both conventional gate material (Ni/Au) and superconducting gate material (NbN) was studied at cryogenic temperature. Furthermore, in order to study device-circuit interaction of the devices, a simulation framework bridging the device-level and circuit-level was developed. The framework was tested on two device concepts, namely GaN p-channel FETs for complementary logic application and the vertical fin transistor for high power RF application.