Fundamentals Of Iii V Semiconductor Mosfets

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Fundamentals of III-V Semiconductor MOSFETs

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Author : Serge Oktyabrsky
Publisher : Springer Science & Business Media
ISBN 13 : 1441915478
Total Pages : 451 pages
Book Rating : 4.4/5 (419 download)

Book Synopsis Fundamentals of III-V Semiconductor MOSFETs by : Serge Oktyabrsky

Download or read book Fundamentals of III-V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

III–V Compound Semiconductors and Devices

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Author : Keh Yung Cheng
Publisher : Springer Nature
ISBN 13 : 3030519031
Total Pages : 537 pages
Book Rating : 4.0/5 (35 download)

Book Synopsis III–V Compound Semiconductors and Devices by : Keh Yung Cheng

Download or read book III–V Compound Semiconductors and Devices written by Keh Yung Cheng and published by Springer Nature. This book was released on 2020-11-08 with total page 537 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.

The Development of III-V Semiconductor MOSFETs for Future CMOS Applications

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Author : Andrew M. Greene
Publisher :
ISBN 13 :
Total Pages : 179 pages
Book Rating : 4.:/5 (944 download)

Book Synopsis The Development of III-V Semiconductor MOSFETs for Future CMOS Applications by : Andrew M. Greene

Download or read book The Development of III-V Semiconductor MOSFETs for Future CMOS Applications written by Andrew M. Greene and published by . This book was released on 2015 with total page 179 pages. Available in PDF, EPUB and Kindle. Book excerpt:

III-V Integrated Circuit Fabrication Technology

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Author : Shiban Tiku
Publisher : CRC Press
ISBN 13 : 9814669318
Total Pages : 706 pages
Book Rating : 4.8/5 (146 download)

Book Synopsis III-V Integrated Circuit Fabrication Technology by : Shiban Tiku

Download or read book III-V Integrated Circuit Fabrication Technology written by Shiban Tiku and published by CRC Press. This book was released on 2016-04-27 with total page 706 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs processing has reached a mature stage. New semiconductor compounds are emerging that will dominate future materials and device research, although the processing techniques used for GaAs will still remain relevant. This book covers all aspects of the current state of the art of III-V processing, with emphasis on HBTs. It is aimed at practicing

Fundamentals of Tunnel Field-Effect Transistors

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Author : Sneh Saurabh
Publisher : CRC Press
ISBN 13 : 1315350262
Total Pages : 216 pages
Book Rating : 4.3/5 (153 download)

Book Synopsis Fundamentals of Tunnel Field-Effect Transistors by : Sneh Saurabh

Download or read book Fundamentals of Tunnel Field-Effect Transistors written by Sneh Saurabh and published by CRC Press. This book was released on 2016-10-26 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last decade, there has been a great deal of interest in TFETs. To the best authors’ knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator.

Handbook for III-V High Electron Mobility Transistor Technologies

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Author : D. Nirmal
Publisher : CRC Press
ISBN 13 : 0429862539
Total Pages : 430 pages
Book Rating : 4.4/5 (298 download)

Book Synopsis Handbook for III-V High Electron Mobility Transistor Technologies by : D. Nirmal

Download or read book Handbook for III-V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Fundamentals Of Nanotransistors

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Author : Mark S Lundstrom
Publisher : World Scientific Publishing Company
ISBN 13 : 981457175X
Total Pages : 389 pages
Book Rating : 4.8/5 (145 download)

Book Synopsis Fundamentals Of Nanotransistors by : Mark S Lundstrom

Download or read book Fundamentals Of Nanotransistors written by Mark S Lundstrom and published by World Scientific Publishing Company. This book was released on 2017-07-11 with total page 389 pages. Available in PDF, EPUB and Kindle. Book excerpt: The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, “bottom-up approach” that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.

Modeling and Simulation in Engineering

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Author : Jan Valdman
Publisher : BoD – Books on Demand
ISBN 13 : 1839682493
Total Pages : 242 pages
Book Rating : 4.8/5 (396 download)

Book Synopsis Modeling and Simulation in Engineering by : Jan Valdman

Download or read book Modeling and Simulation in Engineering written by Jan Valdman and published by BoD – Books on Demand. This book was released on 2020-12-09 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: The general aim of this book is to present selected chapters of the following types: chapters with more focus on modeling with some necessary simulation details and chapters with less focus on modeling but with more simulation details. This book contains eleven chapters divided into two sections: Modeling in Continuum Mechanics and Modeling in Electronics and Engineering. We hope our book entitled "Modeling and Simulation in Engineering - Selected Problems" will serve as a useful reference to students, scientists, and engineers.

Innovative Applications of Nanowires for Circuit Design

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Author : Raj, Balwinder
Publisher : IGI Global
ISBN 13 : 1799864693
Total Pages : 263 pages
Book Rating : 4.7/5 (998 download)

Book Synopsis Innovative Applications of Nanowires for Circuit Design by : Raj, Balwinder

Download or read book Innovative Applications of Nanowires for Circuit Design written by Raj, Balwinder and published by IGI Global. This book was released on 2020-11-20 with total page 263 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanowires are an important sector of circuit design whose applications in very-large-scale integration design (VLSI) have huge impacts for bringing revolutionary advancements in nanoscale devices, circuits, and systems due to improved electronic properties of the nanowires. Nanowires are potential devices for VLSI circuits and system applications and are highly preferred in novel nanoscale devices due to their high mobility and high-driving capacity. Although the knowledge and resources for the fabrication of nanowires is currently limited, it is predicted that, with the advancement of technology, conventional fabrication flow can be used for nanoscale devices, specifically nanowires. Innovative Applications of Nanowires for Circuit Design provides relevant theoretical frameworks that include device physics, modeling, circuit design, and the latest developments in experimental fabrication in the field of nanotechnology. The book covers advanced modeling concepts of nanowires along with their role as a key enabler for innovation in GLSI devices, circuits, and systems. While highlighting topics such as design, simulation, types and applications, and performance analysis of nanowires, this book is ideally intended for engineers, practitioners, stakeholders, academicians, researchers, and students interested in electronics engineering, nanoscience, and nanotechnology.

Fundamentals of III-V Devices

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Author : Liu
Publisher : Wiley-Interscience
ISBN 13 : 9780471362760
Total Pages : 64 pages
Book Rating : 4.3/5 (627 download)

Book Synopsis Fundamentals of III-V Devices by : Liu

Download or read book Fundamentals of III-V Devices written by Liu and published by Wiley-Interscience. This book was released on 1999-10-14 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt: A systematic, accessible introduction to III-V semiconductor devices With this handy book, readers seeking to understand semiconductor devices based on III-V materials no longer have to wade through difficult review chapters focusing on a single, novel aspect of the technology. Well-known industry expert William Liu presents here a systematic, comprehensive treatment at an introductory level. Without assuming even a basic course in device physics, he covers the dc and high-frequency operations of all major III-V devices-heterojunction bipolar transistors (HBTs), metal-semiconductor field-effect transistors (MESFETs), and the heterojunction field-effect transistors (HFETs), which include the high electron mobility transistors (HEMTs). An excellent introduction for researchers and circuit designers working on wireless communications equipment, Fundamentals of III-V Devices offers a variety of features, including: * An introductory chapter on the basic properties, growth process, and device physics of III-V materials * Coverage of both dc and high-frequency models, integrating aspects of device physics and circuit design * A discussion of transistor fabrication and device comparison * 55 worked-out examples illustrating design considerations for a given application * 215 figures and end-of-chapter practice problems * Appendices listing parameters for various materials and transistor types

New Advances in Semiconductors

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Author : Alberto Adriano Cavalheiro
Publisher : BoD – Books on Demand
ISBN 13 : 1803556811
Total Pages : 129 pages
Book Rating : 4.8/5 (35 download)

Book Synopsis New Advances in Semiconductors by : Alberto Adriano Cavalheiro

Download or read book New Advances in Semiconductors written by Alberto Adriano Cavalheiro and published by BoD – Books on Demand. This book was released on 2022-06-15 with total page 129 pages. Available in PDF, EPUB and Kindle. Book excerpt: New Advances in Semiconductors brings together contributions from important researchers around the world on semiconductor materials and their applications. It includes seven chapters in two sections: “Calculations and Simulations in Semiconductors” and “Semiconductor Materials.” The world will emerge different after the social and economic reorganizations caused by the COVID-19 pandemic and will be even more dependent on semiconductors than ever before. New Advances in Semiconductors is a book that brings together the contributions of important researchers around the world and is able to give an idea about the different characteristics of semiconductor materials and their applications. There is a section dedicated to theory, calculations and logic and another dedicated to the development and characterization of semiconductor materials of great future interest. I really hope that this book will help to spread knowledge about this research field to other researchers and students working in this area or even to those interested in starting their more advanced studies.

Devices for Integrated Circuits

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Author : H. Craig Casey
Publisher : John Wiley & Sons
ISBN 13 : 0471171344
Total Pages : 549 pages
Book Rating : 4.4/5 (711 download)

Book Synopsis Devices for Integrated Circuits by : H. Craig Casey

Download or read book Devices for Integrated Circuits written by H. Craig Casey and published by John Wiley & Sons. This book was released on 1998-12-14 with total page 549 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book develops the device physics of the Si and III-V compound semiconductor devices used in integrated circuits. Important equations are derived from basic physical concepts. The physics of these devices are related to the parameters used in SPICE. Terminology is intended to prepare students for reading technical journals on semiconductor devices. This text is suitable for first-year graduate students and seniors in Electrical Engineering; graduate students in Material Science and Chemical Engineering, interested in semiconductor materials; Computer Science students interested in custom VLSI design; and professionals in the semiconductor industry.

ICICCT 2019 – System Reliability, Quality Control, Safety, Maintenance and Management

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Author : Vinit Kumar Gunjan
Publisher : Springer
ISBN 13 : 9811384614
Total Pages : 874 pages
Book Rating : 4.8/5 (113 download)

Book Synopsis ICICCT 2019 – System Reliability, Quality Control, Safety, Maintenance and Management by : Vinit Kumar Gunjan

Download or read book ICICCT 2019 – System Reliability, Quality Control, Safety, Maintenance and Management written by Vinit Kumar Gunjan and published by Springer. This book was released on 2019-06-27 with total page 874 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses reliability applications for power systems, renewable energy and smart grids and highlights trends in reliable communication, fault-tolerant systems, VLSI system design and embedded systems. Further, it includes chapters on software reliability and other computer engineering and software management-related disciplines, and also examines areas such as big data analytics and ubiquitous computing. Outlining novel, innovative concepts in applied areas of reliability in electrical, electronics and computer engineering disciplines, it is a valuable resource for researchers and practitioners of reliability theory in circuit-based engineering domains.

Bismuth-Containing Compounds

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Author : Handong Li
Publisher : Springer Science & Business Media
ISBN 13 : 146148121X
Total Pages : 383 pages
Book Rating : 4.4/5 (614 download)

Book Synopsis Bismuth-Containing Compounds by : Handong Li

Download or read book Bismuth-Containing Compounds written by Handong Li and published by Springer Science & Business Media. This book was released on 2013-10-10 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bismuth-containing compounds comprise a relatively unexplored materials system that is expected to offer many unique and desirable optoelectronic, thermoelectric, and electronic properties for innovative device applications. This book serves as a platform for knowledge sharing and dissemination of the latest advances in novel areas of bismuth-containing compounds for materials and devices, and provides a comprehensive introduction to those new to this growing field. Coverage of bismides includes theoretical considerations, epitaxial growth, characterization, and materials properties (optical, electrical, and structural). In addition to the well-studied area of highly mismatched Bi-alloys, the book covers emerging topics such as topological insulators and ferroelectric materials. Built upon fundamental science, the book is intended to stimulate interest in developing new classes of semiconductor and thermoelectric materials that exploit the properties of Bismuth. Application areas for bismide materials include laser diodes for optical communications, DVD systems, light-emitting diodes, solar cells, transistors, quantum well lasers, and spintronic devices.

III-V Compound Semiconductor Native Oxide Mosfets With Focus on Interface Studies

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Author :
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (946 download)

Book Synopsis III-V Compound Semiconductor Native Oxide Mosfets With Focus on Interface Studies by :

Download or read book III-V Compound Semiconductor Native Oxide Mosfets With Focus on Interface Studies written by and published by . This book was released on 2001 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The application of Al-bearing III-V compound semiconductor native oxides ton Ga As-based metal oxide semiconductor (MOS) electronic devices has been explored. An insulated-gate buried-channel high electron mobility transistor (HEMT) using an AlGaAs native oxide and modulation-doped InGaAs channel has been demonstrated. InAlP native oxides have been shown to have superior electrical properties compared to those of AlGaAs, with insulating quality comparable to that of SiO2 on Si. We have demonstrated the formation of an inversion layer in heterostructure MOS capacitors employing an InAlP native oxide gate insulator. Transmission electron microscopy has been used to examine the oxide/semiconductor interface region. The use of a thin InGaP oxidation barrier layer is shown to improve native oxide uniformity and electrical quality. The InAlP oxide is found to be sufficiently dense to 'cap' and suppress the oxidation of GaAs. X-ray absorption fine-structure spectroscopy (XAFS) and x-ray reflectivity techniques were applied to III-V native oxides using a beamline at the Argonne National Laboratory Advanced Photon Source. Residual As atoms in oxidized AlGaAs films have been found to be coordinated with oxygen in the form of amorphous As oxides. The density profiles of thin surface-oxidized AlGaAs films are obtained by applying a model-independent fitting method to x-ray reflectivity data.

Proceedings of the 2nd International Conference on Electronic Engineering and Renewable Energy Systems

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Author : Bekkay Hajji
Publisher : Springer Nature
ISBN 13 : 9811562598
Total Pages : 858 pages
Book Rating : 4.8/5 (115 download)

Book Synopsis Proceedings of the 2nd International Conference on Electronic Engineering and Renewable Energy Systems by : Bekkay Hajji

Download or read book Proceedings of the 2nd International Conference on Electronic Engineering and Renewable Energy Systems written by Bekkay Hajji and published by Springer Nature. This book was released on 2020-08-14 with total page 858 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book includes papers presented at the Second International Conference on Electronic Engineering and Renewable Energy (ICEERE 2020), which focus on the application of artificial intelligence techniques, emerging technology and the Internet of things in electrical and renewable energy systems, including hybrid systems, micro-grids, networking, smart health applications, smart grid, mechatronics and electric vehicles. It particularly focuses on new renewable energy technologies for agricultural and rural areas to promote the development of the Euro-Mediterranean region. Given its scope, the book is of interest to graduate students, researchers and practicing engineers working in the fields of electronic engineering and renewable energy.

Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing

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Author : D. Misra
Publisher : The Electrochemical Society
ISBN 13 : 1607687127
Total Pages : 365 pages
Book Rating : 4.6/5 (76 download)

Book Synopsis Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing by : D. Misra

Download or read book Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing written by D. Misra and published by The Electrochemical Society. This book was released on with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: