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Foundations Of Ohmic Contact Formation On Aluminum Gallium Nitride Gallium Nitride Heterostructures
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Book Synopsis Foundations of Ohmic Contact Formation on Aluminum Gallium Nitride/gallium Nitride Heterostructures by : Fitih Mustefa Mohammed
Download or read book Foundations of Ohmic Contact Formation on Aluminum Gallium Nitride/gallium Nitride Heterostructures written by Fitih Mustefa Mohammed and published by . This book was released on 2007 with total page 271 pages. Available in PDF, EPUB and Kindle. Book excerpt: Aluminum gallium nitride (AlGaN)/gallium nitride (GaN) high electron mobility transistors (HEMTs) have tremendous potential for application in high frequencies, high temperatures and microwave and mm power amplifications. Fabrication of Ohmic contacts for such devices that meet the stringent low-resistance, high thermal stability and smooth surface morphology requirements has been challenging. In the cases where Ohmic behavior can be achieved, a full scientific understanding of the mechanism(s) through which Ohmic behavior is achieved, as well as the effects of metal interlayer thicknesses, surface preparation, annealing ambient, and interfacial reaction products, is yet to emerge. A such, the focus of this work centers on the investigation of design, processing and materials' issues in the development and optimization of stable Ohmic contacts to AlGaN/GaN heterostructure epilayers in order to begin to address some of these issues. Multilayer Ohmic contact schemes are designed, fabricated and characterized. Design of contact schemes is tailored to enable the identification of the roles constituent components play in achieving Ohmic behavior. The understanding gained from such students has allowed for controlling and optimization of interfacial and intermetallic reactions, and enabled the fabrication of low-resistance contacts with large processing window and high-temperature thermal stability. The outcome of this work lays the foundation for not only the design and fabrication of Ohmic contacts with excellent properties, but also the understanding of Ohmic contact formation mechanisms on AlGaN/GaN heterostructures.
Book Synopsis Ohmic Contacts to the Wide Band Gap Semiconductor Gallium Nitride and to Aluminum Gallium Nitride/gallium Nitride Heterostructures by : Michael Lee Schuette
Download or read book Ohmic Contacts to the Wide Band Gap Semiconductor Gallium Nitride and to Aluminum Gallium Nitride/gallium Nitride Heterostructures written by Michael Lee Schuette and published by . This book was released on 2005 with total page 128 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: To meet temperature and process latitude requirements for ohmic contacts to n-GaN and to AlGaN/GaN heterostructures, a low-temperature copper germanide ohmic contact with a wide processing window was designed and applied to moderately-doped n-GaN achieving [rho]c = 1.1 x 10−5 [omega] cm2 (and Rc x W = 0.26 [omega] mm) and AlGaN/GaN heterostructures achieving [rho]c = 1.6 x 10−4 [omega] cm2 (and Rc X W = 3.6 [omega] mm). It was determined that SiCl4 RIE at low self-bias smooths the n-GaN surface while at high bias the roughness increases only slightly. Core level analysis showed that ion bombardment of n-GaN reduced surface oxidation and increased the concentration of N vacancies at the surface, both of which correlated well with [rho]c's measured via I-V. Auger depth profiling showed that after annealing, both N and Ga diffused out of the GaN and Ge and Cu diffused in. The change in Ge in-diffusion due to annealing, when compared to the as-deposited contact, was greater than that of Cu. The Auger and X-ray photoemission data support the assertion that the ohmic behavior of the copper germanide ohmic contact on n-GaN is due to electron tunneling, which is enhanced by a heavily doped interfacial region created by VN and Ge on VGa, both of which serve as donors in n-GaN. The physical mechanism which provides ohmic contact to AlGaN/GaN heterostructure is similar to that of the n-GaN case with respect to the contamination removal, nitrogen vacancy creation, and germanium occupation of gallium vacancies. However, it is important that the AlGaN layer not be etched such that the source of carriers from this layer for use in the 2DEG channel is depleted. Comments addressing future work that should be done to improve this contact system and allow its use for self-aligned high-electron mobility transistors (HEMTs) are made.
Book Synopsis A Study of Aluminum Gallium Nitride/gallium Nitride Polarization Barriers, Aluminum Gallium Nitride/silicon Carbide Heterojunction Bipolar Transistors and Polarization-based Ohmic Contacts by : Choudhury Jayant Praharaj
Download or read book A Study of Aluminum Gallium Nitride/gallium Nitride Polarization Barriers, Aluminum Gallium Nitride/silicon Carbide Heterojunction Bipolar Transistors and Polarization-based Ohmic Contacts written by Choudhury Jayant Praharaj and published by . This book was released on 2004 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design and Fabrication of Aluminum Gallium Nitride by : Kenneth Kanin Chu
Download or read book Design and Fabrication of Aluminum Gallium Nitride written by Kenneth Kanin Chu and published by . This book was released on 2000 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ohmic Contacts to N-type Aluminum Gallium Arsenide (Al[subscript X]Gá́[subscript X]As, O[lesser Than Or Equal To]x[lesser Than Or Equal To]0.3) Utilizing Limited Solid-phase Reactions by : Eric David Marshall
Download or read book Ohmic Contacts to N-type Aluminum Gallium Arsenide (Al[subscript X]Gá́[subscript X]As, O[lesser Than Or Equal To]x[lesser Than Or Equal To]0.3) Utilizing Limited Solid-phase Reactions written by Eric David Marshall and published by . This book was released on 1989 with total page 590 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication, Performance and Degradation Mechanism of Aluminium [i.e. Aluminum] Gallium Nitride/gallium Nitride Heterostructure Field Effect Transistors by : Hyungtak Kim
Download or read book Fabrication, Performance and Degradation Mechanism of Aluminium [i.e. Aluminum] Gallium Nitride/gallium Nitride Heterostructure Field Effect Transistors written by Hyungtak Kim and published by . This book was released on 2003 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Development and Characterization of Ohmic and Schottky Contacts for Gallium Nitride and Aluminum Gallium Nitride Devices by :
Download or read book Development and Characterization of Ohmic and Schottky Contacts for Gallium Nitride and Aluminum Gallium Nitride Devices written by and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ohmic Contacts to Semiconductors by : Electrochemical Society
Download or read book Ohmic Contacts to Semiconductors written by Electrochemical Society and published by . This book was released on 1969 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Metal Contacts to P-type Gallium Nitride by : Sujit Pillai
Download or read book Metal Contacts to P-type Gallium Nitride written by Sujit Pillai and published by . This book was released on 1999 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Nitride Processing for Electronics, Sensors and Spintronics by : Stephen J. Pearton
Download or read book Gallium Nitride Processing for Electronics, Sensors and Spintronics written by Stephen J. Pearton and published by Springer Science & Business Media. This book was released on 2006-07-06 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
Book Synopsis A Study of Aluminium Gallium Nitride/gallium Nitride Polarization Barriers, Aluminium Gallium Nitride/silicon Carbide Heterojunction Bipolar Transistors and Polarization-based Ohmic Contacts by : Choudhury Jayant Praharaj
Download or read book A Study of Aluminium Gallium Nitride/gallium Nitride Polarization Barriers, Aluminium Gallium Nitride/silicon Carbide Heterojunction Bipolar Transistors and Polarization-based Ohmic Contacts written by Choudhury Jayant Praharaj and published by . This book was released on 2004 with total page 115 pages. Available in PDF, EPUB and Kindle. Book excerpt: Three perpendicular-transport structures using wide band-gap semiconductors were studied. A 50 A thick Aluminium Gallium Nitride polarization barrier showed rectifying characteristics as predicted by theory. Heterojunction Bipolar Transistors using n-Gallium Nitride/p-Silicon Carbide emitter and n-Aluminium Gallium Nitride/p-Gallium Nitride/p-Silicon Carbide emitter, and Silicon Carbide collector, were fabricated and characterized for current gain. The Heterojunction Bipolar Transistor with n-Gallium Nitride/p-Silicon Carbide emitter showed no modulation of output current with input current due to small unrecombined electron currents and large collector-base leakage currents. The Heterojunction Bipolar Transistor with n-Aluminium Gallium Nitride/p-Gallium Nitride/p-Silicon Carbide emitter had a current gain of 0.02. Ohmic contacts to p-type Gallium Nitride using Indium Gallium Nitride cap layers and to p-type Aluminium Gallium Nitride using Gallium Nitride cap layers were designed. Large improvements in ohmic contact resistances were predicted over ohmic contacts to bulk p-type nitride materials in the absence of cap layers.
Book Synopsis Nitride Semiconductors by : Pierre Ruterana
Download or read book Nitride Semiconductors written by Pierre Ruterana and published by John Wiley & Sons. This book was released on 2006-05-12 with total page 686 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor components based on silicon have been used in a wide range of applications for some time now. These elemental semiconductors are now well researched and technologically well developed. In the meantime the focus has switched to a new group of materials: ceramic semiconductors based on nitrides are currently the subject of research due to their optical and electronic characteristics. They open up new industrial possibilities in the field of photosensors, as light sources or as electronic components. This collection of review articles provides a systematic and in-depth overview of the topic, on both a high and current level. It offers information on the physical basics as well as the latest results in a compact yet comprehensive manner. The contributions cover the physical processes involved in manufacture, from semiconductor growth, via their atomic structures and the related characteristics right up to future industrial applications. A highly pertinent book for anyone working in applied materials research or the semiconductor industry.
Book Synopsis Undoped Aluminum Gallium Nitride/gallium Nitride Based Heterostructure High Electron Mobility Transistors for Microwave Applications by : Yunju Sun
Download or read book Undoped Aluminum Gallium Nitride/gallium Nitride Based Heterostructure High Electron Mobility Transistors for Microwave Applications written by Yunju Sun and published by . This book was released on 2006 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Nitride and Related Materials by :
Download or read book Gallium Nitride and Related Materials written by and published by . This book was released on 1996 with total page 1014 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Study of Schottky Contacts to Aluminum Gallium Nitride by : Noah Gene Kim
Download or read book Study of Schottky Contacts to Aluminum Gallium Nitride written by Noah Gene Kim and published by . This book was released on 2001 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Charge Instability and Localization in Aluminum Gallium Nitride/gallium Nitride Heterostructures and Heterostructure Field Effect Transistors Studied by Kelvin Probe Microscopy by : Goutam Koley
Download or read book Charge Instability and Localization in Aluminum Gallium Nitride/gallium Nitride Heterostructures and Heterostructure Field Effect Transistors Studied by Kelvin Probe Microscopy written by Goutam Koley and published by . This book was released on 2003 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ohmic Contacts to P-type Gallium Nitride by : Bo Liu
Download or read book Ohmic Contacts to P-type Gallium Nitride written by Bo Liu and published by . This book was released on 2001 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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