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Author : Stephan Gadau
Publisher :
ISBN 13 :
Total Pages : 202 pages
Book Rating : 4.:/5 (612 download)
Download or read book Finite Element Discretization of 3D Energy-transport Equations for Semiconductors written by Stephan Gadau and published by . This book was released on 2007 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Finite-element Discretization of 3D Energy-transport Equations for Semiconductors written by and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In this thesis a mathematical model was derived that describes the charge and energy transport in semiconductor devices like transistors. Moreover, numerical simulations of these physical processes are performed. In order to accomplish this, methods of theoretical physics, functional analysis, numerical mathematics and computer programming are applied. After an introduction to the status quo of semiconductor device simulation methods and a brief review of historical facts up to now, the attention is shifted to the construction of a model, which serves as the basis of the subsequent derivations in the thesis. Thereby the starting point is an important equation of the theory of dilute gases. From this equation the model equations are derived and specified by means of a series expansion method. This is done in a multi-stage derivation process, which is mainly taken from a scientific paper and which does not constitute the focus of this thesis. In the following phase we specify the mathematical setting and make precise the model assumptions. Thereby we make use of methods of functional analysis. Since the equations we deal with are coupled, we are concerned with a nonstandard problem. In contrary, the theory of scalar elliptic equations is established meanwhile. Subsequently, we are preoccupied with the numerical discretization of the equations. A special finite-element method is used for the discretization. This special approach has to be done in order to make the numerical results appropriate for practical application. By a series of transformations from the discrete model we derive a system of algebraic equations that are eligible for numerical evaluation. Using self-made computer programs we solve the equations to get approximate solutions. These programs are based on new and specialized iteration procedures that are developed and thoroughly tested within the frame of this research work. Due to their importance and their novel status, they are explained and demonstr.
Author : Stefan Holst
Publisher :
ISBN 13 :
Total Pages : 44 pages
Book Rating : 4.:/5 (314 download)
Download or read book A Mixed Finite-element Discretization of the Energy-transport Model for Semiconductors written by Stefan Holst and published by . This book was released on 2001 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Stefan Holst
Publisher :
ISBN 13 :
Total Pages : 15 pages
Book Rating : 4.:/5 (767 download)
Download or read book Finite Element Discretizations of Semiconductor Energy Transport Equations written by Stefan Holst and published by . This book was released on 2003 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Ansgar Jüngel
Publisher : Springer
ISBN 13 : 3540895264
Total Pages : 326 pages
Book Rating : 4.5/5 (48 download)
Download or read book Transport Equations for Semiconductors written by Ansgar Jüngel and published by Springer. This book was released on 2009-04-20 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor devices are ubiquitous in the modern computer and telecommunications industry. A precise knowledge of the transport equations for electron flow in semiconductors when a voltage is applied is therefore of paramount importance for further technological breakthroughs. In the present work, the author tackles their derivation in a systematic and rigorous way, depending on certain key parameters such as the number of free electrons in the device, the mean free path of the carriers, the device dimensions and the ambient temperature. Accordingly a hierarchy of models is examined which is reflected in the structure of the book: first the microscopic and macroscopic semi-classical approaches followed by their quantum-mechanical counterparts.
Author : Ansgar Jüngel
Publisher : Springer Science & Business Media
ISBN 13 : 3540895256
Total Pages : 326 pages
Book Rating : 4.5/5 (48 download)
Download or read book Transport Equations for Semiconductors written by Ansgar Jüngel and published by Springer Science & Business Media. This book was released on 2009-03-17 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume presents a systematic and mathematically accurate description and derivation of transport equations in solid state physics, in particular semiconductor devices.
Author : W.H.A. SCHILDERS
Publisher : Elsevier
ISBN 13 : 0080459153
Total Pages : 930 pages
Book Rating : 4.0/5 (84 download)
Download or read book Numerical Methods in Electromagnetics written by W.H.A. SCHILDERS and published by Elsevier. This book was released on 2005-04-04 with total page 930 pages. Available in PDF, EPUB and Kindle. Book excerpt: This special volume provides a broad overview and insight in the way numerical methods are being used to solve the wide variety of problems in the electronics industry. Furthermore its aim is to give researchers from other fields of application the opportunity to benefit from the results wich have been obtained in the electronics industry. * Complete survey of numerical methods used in the electronic industry* Each chapter is selfcontained* Presents state-of-the-art applications and methods* Internationally recognised authors
Author : Ioana Alexandra Triandaf
Publisher :
ISBN 13 :
Total Pages : 286 pages
Book Rating : 4.:/5 (319 download)
Download or read book A Finite Element Method for Numerically Solving the Semiconductor Device Equations written by Ioana Alexandra Triandaf and published by . This book was released on 1991 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : B. M. Grossman
Publisher :
ISBN 13 :
Total Pages : 18 pages
Book Rating : 4.:/5 (897 download)
Download or read book Finite-element Solution of the Semiconductor Transport Equations written by B. M. Grossman and published by . This book was released on 1983 with total page 18 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Joseph W. Jerome
Publisher :
ISBN 13 :
Total Pages : 60 pages
Book Rating : 4.:/5 (31 download)
Download or read book A Finite Element Approximation Theory for the Drift Diffusion Semiconductor Model written by Joseph W. Jerome and published by . This book was released on 1989 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: "Two-sided estimates are derived for the approximation of solutions to the drift-diffusion steady-state semiconductor device system which are identified with fixed points of Gummel's solution map. The approximations are defined in terms of fixed points of numerial finite element discretization maps. By use of a calculus developed by Krasnosel'skii and his co-workers, it is possible, both to locate approximations near fixed points in an 'a priori' manner, as well as fixed points near approximations in an 'a posteriori' manner. These results thus establish a nonlinear approximation theory, in the energy norm, with rate keyed to what is possible in a standard linear theory. This analysis provides a convergence theory for typical computational approaches in current use for semiconductor simulation."
Author : Heiner Ryssel
Publisher : Springer Science & Business Media
ISBN 13 : 3709166195
Total Pages : 515 pages
Book Rating : 4.7/5 (91 download)
Download or read book Simulation of Semiconductor Devices and Processes written by Heiner Ryssel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 515 pages. Available in PDF, EPUB and Kindle. Book excerpt: SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.
Author :
Publisher :
ISBN 13 :
Total Pages : 16 pages
Book Rating : 4.:/5 (727 download)
Download or read book A Piecewise Linear Discontinuous Finite Element Spatial Discretization of the Transport Equation in 2D Cylindrical Geometry written by and published by . This book was released on 2008 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt: We present a new spatial discretization of the discrete-ordinates transport equation in two-dimensional cylindrical (RZ) geometry for arbitrary polygonal meshes. This discretization is a discontinuous finite element method that utilizes the piecewise linear basis functions developed by Stone and Adams. We describe an asymptotic analysis that shows this method to be accurate for many problems in the thick diffusion limit on arbitrary polygons, allowing this method to be applied to radiative transfer problems with these types of meshes. We also present numerical results for multiple problems on quadrilateral grids and compare these results to the well-known bi-linear discontinuous finite element method.
Author : Robert E. O'Malley
Publisher : SIAM
ISBN 13 : 9780898713022
Total Pages : 424 pages
Book Rating : 4.7/5 (13 download)
Download or read book ICIAM 91 written by Robert E. O'Malley and published by SIAM. This book was released on 1992-01-01 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings -- Computer Arithmetic, Algebra, OOP.
Author : Heiner Ryssel
Publisher : Springer Science & Business Media
ISBN 13 : 9783211827369
Total Pages : 526 pages
Book Rating : 4.8/5 (273 download)
Download or read book Simulation of Semiconductor Devices and Processes, Vol. 6 written by Heiner Ryssel and published by Springer Science & Business Media. This book was released on 1995 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: SISDEP '95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.
Author : Chandan Kumar Sarkar
Publisher : CRC Press
ISBN 13 : 1466512660
Total Pages : 462 pages
Book Rating : 4.4/5 (665 download)
Download or read book Technology Computer Aided Design written by Chandan Kumar Sarkar and published by CRC Press. This book was released on 2018-09-03 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt: Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus. • Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits • Introduces the advantages of TCAD simulations for device and process technology characterization • Presents the fundamental physics and mathematics incorporated in the TCAD tools • Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus) • Provides characterization of performances of VLSI MOSFETs through TCAD tools • Offers familiarization to compact modeling for VLSI circuit simulation R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.
Author :
Publisher :
ISBN 13 :
Total Pages : 678 pages
Book Rating : 4.3/5 (243 download)
Download or read book Energy Research Abstracts written by and published by . This book was released on 1991 with total page 678 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 1044 pages
Book Rating : 4.F/5 ( download)
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 1044 pages. Available in PDF, EPUB and Kindle. Book excerpt:
