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Author :
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ISBN 13 :
Total Pages : 174 pages
Book Rating : 4.3/5 (91 download)
Download or read book Fabrication of Semiconductor Devices by Neutron Transmutation Doping written by and published by . This book was released on 1962 with total page 174 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Robert D. Larrabee
Publisher : Springer Science & Business Media
ISBN 13 : 1461326958
Total Pages : 337 pages
Book Rating : 4.4/5 (613 download)
Download or read book Neutron Transmutation Doping of Semiconductor Materials written by Robert D. Larrabee and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.
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ISBN 13 :
Total Pages : 178 pages
Book Rating : 4.3/5 (91 download)
Download or read book Fabrication of Semiconductor Devices by Neutron Transmutation Doping written by and published by . This book was released on 1962-12 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Carl N. Klahr
Publisher :
ISBN 13 :
Total Pages : 84 pages
Book Rating : 4.3/5 (91 download)
Download or read book Fabrication of Silicon Microcircuits by Neutron Transmutation Doping written by Carl N. Klahr and published by . This book was released on 1966 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : J. Meese
Publisher : Springer Science & Business Media
ISBN 13 : 1468482491
Total Pages : 368 pages
Book Rating : 4.4/5 (684 download)
Download or read book Neutron Transmutation Doping in Semiconductors written by J. Meese and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna tional in scope.
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ISBN 13 :
Total Pages : 60 pages
Book Rating : 4.3/5 (91 download)
Download or read book Process Radiation Development Program Summaries written by and published by . This book was released on 1962 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 748 pages
Book Rating : 4.:/5 (31 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1980 with total page 748 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
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ISBN 13 :
Total Pages : 1200 pages
Book Rating : 4.E/5 ( download)
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1970 with total page 1200 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 816 pages
Book Rating : 4.E/5 ( download)
Download or read book Isotopes and Radiation Technology written by and published by . This book was released on 1964 with total page 816 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : United States. Superintendent of Documents
Publisher :
ISBN 13 :
Total Pages : 1504 pages
Book Rating : 4.F/5 ( download)
Download or read book Monthly Catalog of United States Government Publications, Cumulative Index written by United States. Superintendent of Documents and published by . This book was released on 1979 with total page 1504 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : U.S. Atomic Energy Commission. Division of Isotopes Development
Publisher :
ISBN 13 :
Total Pages : 72 pages
Book Rating : 4.3/5 (91 download)
Download or read book Process Radiation Development Program Summaries written by U.S. Atomic Energy Commission. Division of Isotopes Development and published by . This book was released on 1963 with total page 72 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jens Guldberg
Publisher : Springer Science & Business Media
ISBN 13 : 1461332613
Total Pages : 493 pages
Book Rating : 4.4/5 (613 download)
Download or read book Neutron-Transmutation-Doped Silicon written by Jens Guldberg and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 493 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.
Download or read book TID. written by and published by . This book was released on 19?? with total page 58 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : B. Jayant Baliga
Publisher : Springer
ISBN 13 : 3319939882
Total Pages : 1114 pages
Book Rating : 4.3/5 (199 download)
Download or read book Fundamentals of Power Semiconductor Devices written by B. Jayant Baliga and published by Springer. This book was released on 2018-09-28 with total page 1114 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.
Author : American Nuclear Society
Publisher :
ISBN 13 :
Total Pages : 836 pages
Book Rating : 4.3/5 (91 download)
Download or read book Transactions of the American Nuclear Society written by American Nuclear Society and published by . This book was released on 1967 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 1352 pages
Book Rating : 4.:/5 (319 download)
Download or read book Government-wide Index to Federal Research & Development Reports written by and published by . This book was released on 1967 with total page 1352 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Ivor Brodie
Publisher : Springer Science & Business Media
ISBN 13 : 1489921605
Total Pages : 518 pages
Book Rating : 4.4/5 (899 download)
Download or read book The Physics of Microfabrication written by Ivor Brodie and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Physical Electronics Department of SRI International (formerly Stanford Research Institute) has been pioneering the development of devices fabricated to submicron tolerances for well over 20 years. In 1961, a landmark paper on electron-beam lithography and its associated technologies was published by K. R. Shoulderst (then at SRI), which set the stage for our subsequent efforts in this field. He had the foresight to believe that the building of such small devices was actually within the range of human capabilities. As a result of this initial momentum, our experience in the technologies associated with microfabrication has become remarkably comprehensive, despite the relatively small size of our research activity. We have frequently been asked to deliver seminars or provide reviews on various aspects of micro fabrication. These activities made us aware of the need for a comprehensive overview of the physics of microfabrication. We hope that this book will fill that need.
