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Fabrication And Examination Of Epitaxial Htsc Isolator Thin Films On Sapphire Substrates For Application In High Frequency Devices
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Book Synopsis Fabrication and examination of epitaxial HTSC/isolator thin films on sapphire substrates for application in high frequency devices by : H. Kittel
Download or read book Fabrication and examination of epitaxial HTSC/isolator thin films on sapphire substrates for application in high frequency devices written by H. Kittel and published by . This book was released on 1996 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Characterization of Epitaxial Yba2cu3oy Thin Films on Double-Buffered Silicon Substrates by : Ho-Yi Eric Wong
Download or read book Fabrication and Characterization of Epitaxial Yba2cu3oy Thin Films on Double-Buffered Silicon Substrates written by Ho-Yi Eric Wong and published by . This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Fabrication and Characterization of Epitaxial YBa2Cu3Oy Thin Films on Double-buffered Silicon Substrates" by Ho-yi, Eric, Wong, 黃灝頤, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Abstract of thesis entitled FABRICATION AND CHARACTERIZATION OF EPITAXIAL YBa Cu O 2 3 y THIN FILMS ON DOUBLE-BUFFERED SILICON SUBSTRATES submitted by WONG HO YI ERIC for the degree of Master of Philosophy at The University of Hong Kong in August 2003 The discovery of perovskite copper oxide YBa Cu O (YBCO) has aroused a 2 3 y constantly increasing interest in this material due to the potential applications in microelectronics devices, such as microwave elements, multilayer junctions, etc. Suitable substrates with a low dielectric constant, good high frequency properties, large size and low cost are necessary. Silicon substrates are widely used and well developed in the semiconductor industry and microwave device applications. Therefore, successful fabrication of high T YBCO films on silicon is of interest for various applications of hybrid superconductor-semiconductor devices and interconnected circuits. In such applications, the epitaxial growth of YBCO on silicon is extremely important. This thesis presents a systematic investigation of the fabrication and characterization of epitaxial YBCO thin films on silicon substrates with a double buffer of Eu CuO (ECO)/YSZ(Yttria-Stabilized Zirconia). Silicon (001) substrates 2 4 were prepared using a chemical etch by dilute HF acid prior to thin film deposition. The YBCO thin films were grown via an entirely in situ process using an on-axis rf magnetron sputtering method with optimized deposition parameters including the deposition temperature, operating pressure and partial oxygen pressure. The crystallinity, surface morphology, electrical properties, and interface of the obtained YBCO/ECO/YSZ thin films were studied by x-ray diffraction, surface profiler, atomic force microscope, optical microscope, standard dc four-probe measurements and small angle x-ray reflection. The X-ray diffraction patterns showed that all the thin films were highly c-axis oriented. A full width of 0.69 at half maximum of the YBCO(005) peak was obtained. This was smaller than reported in previous studies of YBCO thin films on double buffered silicon or nickel substrates. The atomic force microscopy image showed that the ECO buffer surface was flat and smooth. The average roughness over a wide scanning region of 2000m was less than 25nm. The optical microscope images showed that the surface morphology of the grown YBCO thin films was significantly improved by the ECO buffer layer since ECO had a very stable 214-T' crystal structure and very small lattice mismatch with YBCO. The YBCO/ECO/YSZ multilayers were further characterized by small angle x-ray reflection. The surface roughness of the YBCO layers decreased when an ECO buffer was added. No intermediate layer was found at the YBCO/ECO and ECO/YSZ interfaces. The results suggest that ECO is chemically compatible with YBCO and YSZ. The superconductivity of YBCO films was significantly improved by the ECO/YSZ double buffer. This is indicated by the fact that YBCO thin films on silicon substrates with an ECO/YSZ double buffer showed a higher T than that grown on YSZ/Si without the ECO layer. The advantages of using ECO/YSZ double buffer layers in deposition of YBCO on silicon were clearly demonstrated. It would provide a good basis for the potential applications of YBCO on other semiconductors, metallic or me
Book Synopsis Epitaxial Silicon Technology by : B Baliga
Download or read book Epitaxial Silicon Technology written by B Baliga and published by Elsevier. This book was released on 2012-12-02 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial Silicon Technology is a single-volume, in-depth review of all the silicon epitaxial growth techniques. This technology is being extended to the growth of epitaxial layers on insulating substrates by means of a variety of lateral seeding approaches. This book is divided into five chapters, and the opening chapter describes the growth of silicon layers by vapor-phase epitaxy, considering both atmospheric and low-pressure growth. The second chapter discusses molecular-beam epitaxial growth of silicon, providing a unique ability to grow very thin layers with precisely controlled doping characteristics. The third chapter introduces the silicon liquid-phase epitaxy, in which the growth of silicon layers arose from a need to decrease the growth temperature and to suppress autodoping. The fourth chapter addresses the growth of silicon on sapphire for improving the radiation hardness of CMOS integrated circuits. The fifth chapter deals with the advances in the application of silicon epitaxial growth. This chapter also discusses the formation of epitaxial layers of silicon on insulators, such as silicon dioxide, which do not provide a natural single crystal surface for growth. Each chapter begins with a discussion on the fundamental transport mechanisms and the kinetics governing the growth rate, followed by a description of the electrical properties that can be achieved in the layers and the restrictions imposed by the growth technique upon the control over its electrical characteristics. Each chapter concludes with a discussion on the applications of the particular growth technique. This reference material will be useful for process technologists and engineers who may need to apply epitaxial growth for device fabrication.
Book Synopsis Growth and Characterization of Epitaxial Oxide Thin Films by : Ashish Garg
Download or read book Growth and Characterization of Epitaxial Oxide Thin Films written by Ashish Garg and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial oxide thin films are used in many technologically important device applications. This work deals with the deposition and characterization of epitaxial WO3 and SrBi2Ta2O9 (SBT) thin films on single crystal oxide substrates. WO3 thin films were chosen as a subject of study because of recent findings of superconductivity at surfaces and twin boundaries in the bulk form of this oxide. Highly epitaxial thin films would be desirable in order to be able to create a device within a film without patterning it, by locally creating superconducting regions (e.g. twins) within an otherwise defect free film by reducing or doping the film with Na. Films were deposited by reactive magnetron sputtering at various temperatures on single crystal SrTiO3 (100) and R-sapphire substrates. X-ray diffraction studies showed that the optimised films were highly (001) oriented, quality of epitaxy improving with decreasing deposition temperature. AFM studies revealed columnar growth of these films. Films were heat treated with Na vapour in order to reduce or dope them with Na. Low temperature measurements of the reduced films did not show existence of any superconductivity. SBT is a ferroelectric oxide and its thin films are attractive candidates for non-volatile ferroelectric random access memory (FRAM) applications. High structural anisotropy leads to a high degree of anisotropy in its ferroelectric properties which makes it essential to study epitaxial SBT films of different orientations. In this study, SBT films of different orientations were deposited on different single crystal substrates by pulsed laser ablation. Highly epitaxial c-axis oriented and smooth SBT films were deposited on SrTiO3 (100) substrates. AFM studies revealed the growth of these films by 3-D Stranski-Krastanov mode. However, these films did not exhibit any ferroelectric activity. Highly epitaxial (116)-oriented films were deposited on SrTiO3 (110) substrates. These films were also very smooth with root mean square (RMS) roughness of 15-20 Å. Films deposited on TiO2 (110) were partially a-/b-axis oriented and showed the formation of c-axis oriented SBT and many impurities. Completely a-/b-axis oriented SBT films were deposited on LaSrAlO4 (110) substrates. Films deposited at non-optimal growth temperatures showed the formation of many impurities. Attempts were also made towards depositing Sr2RuO4 films on LaSrAlO4 (110) substrates, which can act as a bottom electrode for ferroelectric SBT films.
Book Synopsis Incorporation of Iron Cations Into Epitaxial Sapphire Thin Films by Co-evaporation and Subsequent Thermal Annealing by :
Download or read book Incorporation of Iron Cations Into Epitaxial Sapphire Thin Films by Co-evaporation and Subsequent Thermal Annealing written by and published by . This book was released on 1994 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: Iron-doped sapphire thin films have been successfully epitaxially grown onto sapphire single crystal substrates by electron beam deposition and subsequent thermal annealing. Amorphous Al2O3 thin films, about 280--390 nm thick, cation doped with iron have been deposited on [0001] oriented sapphire substrates. Iron doping with cation concentrations (a ratio of Fe content to total cation content) up to 5 at % can be incorporated into the octahedral sites of Al-cation sublattice during the epitaxial regrowth process at 1,000--1,400 C, as determined by Rutherford Backscattering Spectrometry and ion channeling measurements. Cross-sectional Transmission Electron Microscopy shows the presence of two distinct regions in the annealed films. One exhibits the epitaxial relationship with the sapphire substrate and the second region has amorphous type of contrast. External optical transmittance measurements in the ultra violet and visible light range have exhibited the absorption associated with Fe{sup 3+}. This study has demonstrated a simple method of incorporating dopants into single crystal sapphire, which has potential in the fabrications of thin film planar optical waveguides.
Book Synopsis Epitaxial Growth by : J. W. Matthews
Download or read book Epitaxial Growth written by J. W. Matthews and published by Elsevier. This book was released on 2013-10-22 with total page 315 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial Growth Part B is the second part of a collection of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The topics discussed are the nucleation of thin films, the structure of the interface between film and substrate, and the generation of defects during film growth. The methods used to prepare and examine thin films are described and a list of the overgrowth-substrate combinations studied so far is given.
Book Synopsis SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices by : John D. Cressler
Download or read book SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Book Synopsis Government Reports Announcements & Index by :
Download or read book Government Reports Announcements & Index written by and published by . This book was released on 1996 with total page 690 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Epitaxial Growth Part A by : J Matthews
Download or read book Epitaxial Growth Part A written by J Matthews and published by Elsevier. This book was released on 2012-12-02 with total page 401 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial Growth, Part A is a compilation of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The collection contains topics on the historical development of epitaxy, the nucleation of thin films, the structure of the interface between film and substrate, and the generation of defects during film growth. The text also provides descriptions of the methods used to prepare and examine thin films and a list of the overgrowth-substrate combinations studied. Mineralogists, materials engineers and scientists, and physicists will find this book a great source of insight.
Book Synopsis Study of Epitaxial Thin Films of Yba2cu3o7-[Delta] on Silicon with Different Buffer Layers by : Engang Fu
Download or read book Study of Epitaxial Thin Films of Yba2cu3o7-[Delta] on Silicon with Different Buffer Layers written by Engang Fu and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Study of Epitaxial Thin Films of YBa2Cu3O7-[delta] on Silicon With Different Buffer Layers" by Engang, Fu, 付恩剛, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Abstract of thesis entitled STUDY OF EPITAXIAL THIN FILMS OF YBa Cu O ON 2 3 7-δ SILICON WITH DIFFERENT BUFFER LAYERS submitted by Fu Engang for the degree of Master of Philosophy at The University of Hong Kong in August 2005 Silicon is the most widely used semiconductor in the microelectronic industry. Highly epitaxial thin films of YBa Cu O (YBCO) grown on Si wafers are of 2 3 7-δ special interest for development of superconductor/semiconductor hybrid microelectronic devices and circuits. However, severe interaction between Si and YBCO layer, large mismatch in their lattice constant, and strain due to different thermal expansion often degrade the crystallinity and superconductivity of the grown YBCO layers. In this study, yttria-stabilized zirconia (YSZ) and Eu CuO (ECO) 2 4 were introduced as double buffer layers to improve the growth and properties of the YBCO thin films grown on silicon. Preparation and characterization of epitaxial YBCO/ECO/YSZ/Si multilayer structures were studied. YBCO thin films and the double buffer layers of ECO/YSZ were deposited on the silicon (100) substrate by the pulsed laser deposition (PLD) method. Firstly, the YSZ thin layer was grown epitaxially on silicon (100) substrate to separate YBCO from the Si substrate. Effects of substrate temperature and operating gas pressure on the structure and surface roughness of YSZ thin film were examined and the optimum deposition parameters were determined based on experimental results and comprehensive analysis. X-Ray diffraction (XRD) patterns and rocking curve revealed an epitaxial growth with a perfect c-axis orientation. The YSZ thin films grown on silicon substrate have smooth surface, providing a base on which ECO and YBCO thin film can be grown epitaxially. To further improve the quality of YBCO films, an additional layer of ECO with very stable 214-T' crystal structure was inserted between YBCO and YSZ/Si. The influence of substrate temperature and oxygen gas pressure on the properties of ECO thin films grown on YSZ/Si were experimentally analyzed and the growth conditions were optimized. Finally, the epitaxial YBCO thin films were grown on silicon substrate with double buffer layers of ECO/YSZ. The influences of substrate temperature, oxygen gas pressure and different buffer layers on the properties of YBCO thin films were studied. It was found that the crystal structure, surface roughness and superconductivity of YBCO films could be significantly improved by adding such a double buffer of ECO/YSZ. The quality of the YBCO thin films has been significantly enhanced when compared with that grown on Si with a single YSZ buffer layer and with double buffer layers of Nd CuO (NCO)/YSZ. Such highly 2 4 epitaxial thin films of YBCO grown on silicon should be of great interest for various applications including high-frequency elements, millimeter-wave receivers, and superconducting quantum interference devices. DOI: 10.5353/th_b3637488 Subjects: Thin films Silicon Epitaxy
Book Synopsis Characterization of Epitaxial Semiconductor Films by : Henry Kressel
Download or read book Characterization of Epitaxial Semiconductor Films written by Henry Kressel and published by Elsevier Science & Technology. This book was released on 1976 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Substrate Engineering--paving the Way to Epitaxy by : David Norton
Download or read book Substrate Engineering--paving the Way to Epitaxy written by David Norton and published by . This book was released on 2000 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial growth has always been a marriage of convenience between film and substrate. More and more frequently, however, it is impractical to use the same material for both film and substrate because it is not available as large single crystals, it is prohibitively expensive, or its properties are ill-suited for the intended application. To meet these challenges, many strategies have been pursued to achieve highly oriented or single-crystal thin films via epitaxy. Crystalline films have been mechanically bonded to other materials to form composite substrates. Crystals have been cut and rewelded, patterned and regrown, buffer layered and repolished. Each strategy has met with fundamental challenges including lattice mismatch, chemical incompatibility, differences in thermal expansion, and structural dissimilarity. This book, first published in 2000, focuses on developments in novel substrate engineering which enable improved epitaxy. Topics include: biaxially textured substrates for high-Tc-coated conductors; surfaces for oxide epitaxy; wafer bonding and lift off; lattice mismatch engineering; substrate engineering and solid-phase recrystallization and epitaxy.
Download or read book Epitaxy written by Marian A. Herman and published by . This book was released on 2014-09-01 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Properties of Ultrathin Epitaxial Layers by :
Download or read book Growth and Properties of Ultrathin Epitaxial Layers written by and published by Elsevier. This book was released on 1997-06-18 with total page 673 pages. Available in PDF, EPUB and Kindle. Book excerpt: Although there has been steady progress in understanding aspects of epitaxial growth throughout the last 30 years of modern surface science, work in this area has intensified greatly in the last 5 years. A number of factors have contributed to this expansion. One has been the general trend in surface science to tackle problems of increasing complexity as confidence is gained in the methodology, so for example, the role of oxide/metal interfaces in determining the properties of many practical supported catalysts is now being explored in greater detail. A second factor is the recognition of the potential importance of artificial multilayer materials not only in semiconductor devices but also in metal/metal systems because of their novel magnetic properties. Perhaps even more important than either of these application areas, however, is the newly-discovered power of scanning probe microscopies, and most notably scanning tunneling microscopy (STM), to provide the means to study epitaxial growth phenomena on an atomic scale under a wide range of conditions. These techniques have also contributed to revitalised interest in methods of fabricating and exploiting artificial structures (lateral as well as in layers) on a nanometre scale. This volume, on Growth and Properties of Ultrathin Epitaxial Layers, includes a collection of articles which reflects the present state of activity in this field. The emphasis is on metals and oxides rather than semiconductors.
Book Synopsis Integration of Epitaxial Piezoelectric Thin Films on Silicon by : Shi Yin
Download or read book Integration of Epitaxial Piezoelectric Thin Films on Silicon written by Shi Yin and published by . This book was released on 2013 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, piezoelectric materials, like lead titanate zirconate Pb(ZrxTi1-x)O3 (PZT), zinc oxide ZnO, and the solid solution Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT), increasingly receive intensive studies because of their innovative applications in the microelectromechanical systems (MEMS). In order to integrate them on silicon substrate, several preliminaries must be taken into considerations, e.g. buffer layer, bottom electrode. In this thesis, piezoelectric films (PZT and PMN-PT) have been successfully epitaxially grown on silicon and SOI (silicon-on-insulator) in the form of single crystal by sol-gel process. In fact, recent studies show that single crystalline films seem to possess the superior properties than that of polycrystalline films, leading to an increase of the performance of MEMS devices. The first objective of this thesis was to realize the epitaxial growth of single crystalline film of piezoelectric materials on silicon. The use of a buffer layer of gadolinium oxide(Gd2O3) or strontium titanate (SrTiO3 or STO) deposited by molecular beam epitaxy (MBE) has been studied in detail to integrate epitaxial PZT and PMN-PT films on silicon. For Gd2O3/Si(111) system, the study of X-ray diffraction (XRD) on the growth of PZT film shows that the film is polycrystalline with coexistence of the nonferroelectric parasite phase, i.e. pyrochlore phase. On the other hand, the PZT film deposited on STO/Si(001) substrate is successfully epitaxially grown in the form of single crystalline film. In order to measure the electrical properties, a layer of strontium ruthenate (SrRuO3 or SRO) deposited by pulsed laser deposition (PLD) has been employed for bottom electrode due to its excellent conductivity and perovskite crystalline structure similar to that of PZT. The electrical characterization on Ru/PZT/SRO capacitors demonstrates good ferroelectric properties with the presence of hysteresis loop. Besides, the relaxor ferroelectric PMN-PT has been also epitaxially grown on STO/Si and confirmed by XRD and transmission electrical microscopy (TEM). This single crystalline film has the perovskite phase without the appearance of pyrochlore. Moreover, the study of infrared transmission using synchrotron radiation has proven a diffused phase transition over a large range of temperature, indicating a typical relaxor ferroelectric material. The other interesting in the single crystalline PZT films deposited on silicon and SOI is to employ them in the application of MEMS devices, where the standard silicon techniques are used. The microfabrication process performed in the cleanroom has permitted to realize cantilevers and membranes in order to mechanically characterize the piezoelectric layers. Mechanical deflection under the application of an electric voltage could be detected by interferometry. Eventually, this characterization by interferometry has been studied using the modeling based on finite element method and analytic method. In the future, it will be necessary to optimize the microfabrication process of MEMS devices based on single crystalline piezoelectric films in order to ameliorate the electromechanical performance. Finally, the characterizations at MEMS device level must be developed for their utilization in the future applications.
Book Synopsis Evolution of Epitaxial Structure and Morphology: Volume 399 by : David Chambliss
Download or read book Evolution of Epitaxial Structure and Morphology: Volume 399 written by David Chambliss and published by Materials Research Society. This book was released on 1996-07-02 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The evolution of epitaxial structure and morphology has assumed enormous scientific and technological importance in many areas of materials science. From the growth of magnetic multilayers to the fabrication of semiconductor devices, it is generally recognized that an understanding of microstructural development is fundamental to the control of the electronic, magnetic and mechanical properties of thin films. This book from MRS focuses on the structure and morphology of epitaxial systems with a particular emphasis on the time evolution of these properties as growth proceeds. It brings together advances to assess the relative roles of wetting and cohesion, reconstruction, surface and interfacial energy, misfit stress, and defect generation and propagation. It covers a broad mix of work, from basic studies of epitaxial metals and semiconductors to their application in thin-film electronic materials technology. Topics include: growth monitoring and characterization; island-size distributions and kinetic roughening; surfactants, intermixing and alloying; evolution of large-scale structures; self-organized epitaxial structures; strain relaxation; strain relaxation; steps, adatoms and islands and interface roughness and interdiffusion.
Book Synopsis Substrate Surface Structure Effects on Microstructure of Epitaxial Films by :
Download or read book Substrate Surface Structure Effects on Microstructure of Epitaxial Films written by and published by . This book was released on 1992 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: Microstructure of epitaxial thin films grown on sapphire substrates using the metal organic chemical vapor deposition technique were found to depend on the substrates surface structure. Epitaxial TiO2 films grown on the sapphire (0001) substrates were highly-oriented polycrystal and the films on the (1120) substrates were single crystal. First-principles total energy calculations were carried out to gain atomistic understandings of sapphire surface structures and their effects on microstructure of epitaxial films. The surface terminating atom planes were found to be Al atoms for the (0001) surface and O atoms for the (1120). Minimum step heights were one sixth of the lattice constant c for the (0001) and one half of the lattice constant a for the (1120). Steps of minimum height or its odd multiples on sapphire (0001) surface double the number of variants in the deposited films. The symmetry and step of the substrate surface and symmetry of the epitaxial growth plane controlled the microstructure of the epitaxial films.
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