Fabrication And Electrical Measurements Of Gallium Nitride High Electron Mobility Transistors

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Fabrication and Electrical Measurements of Gallium Nitride High Electron Mobility Transistors

Author : Yi Fan Qi
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (911 download)

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Book Synopsis Fabrication and Electrical Measurements of Gallium Nitride High Electron Mobility Transistors by : Yi Fan Qi

Download or read book Fabrication and Electrical Measurements of Gallium Nitride High Electron Mobility Transistors written by Yi Fan Qi and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: "Gallium nitride (GaN) high electron mobility transistors (HEMTs) have a potential in electronic fields such as broadband communication and radar applications. GaN possesses many advantages including a direct and wide bandgap, making GaN HEMTs ideal to high voltage and high temperature. Experiments have yielded devices with high power output efficiency and bandwidth compared to other modern transistor devices. In this work, GaN HEMTs on silicon substrates with various gate lengths have been designed and fabricated. The current-voltage characteristics and breakdown voltages of the HEMTs have been measured. The design, fabrication, and characterization of different devices were presented, as well as the measurements and discussion of devices under effects of heat treatment. Although the fabrication technology is still immature and under development, GaN HEMTs have shown promising results in radio frequency, high power, and wireless power transfer applications. The goal of this work is to investigate the electrical properties of the GaN HEMTs and to develop this technology in high power devices in the future." --

Design, Fabrication and Characterization of Gallium Nitride High-electron-mobility Transistors

Author : Jonathan George Felbinger
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (671 download)

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Book Synopsis Design, Fabrication and Characterization of Gallium Nitride High-electron-mobility Transistors by : Jonathan George Felbinger

Download or read book Design, Fabrication and Characterization of Gallium Nitride High-electron-mobility Transistors written by Jonathan George Felbinger and published by . This book was released on 2010 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the past few years, systems based on gallium nitride high-electron-mobility transistors (GaN HEMTs) have increasingly penetrated the markets for cellular telephone base stations, RADAR, and satellite communications. High power (several W/mm), continuous-wave (CW) operation of microwave HEMTs dissipates heat; as the device increases in temperature, its electron mobility drops and performance degrades. To enhance high-power performance and enable operation in high ambient temperature environments, the AlxGa1[-]xN/GaN epitaxial layers are attached to polycrystalline diamond substrates. e lower surface temperature rise on GaN-on- diamond is directly measured; subsequently, improved electrical performance is demonstrated on diamond versus the native (Si) substrates. Benchmark AlxGa1[-]xN/GaN devices are fabricated on SiC for comparison to diamond, Si, and bulk GaN substrates; the merits and performance of each is compared. In collaboration with Group4 Labs, X-band amplifier modules based on GaN-on-diamond HEMTs have been demonstrated for the first time. Recent efforts have focused on substituting AlxIn1[-]xN barriers in place of AlxGa1[-]xN to achieve higher output power at microwave frequencies and addressing the challenges of this new material system. Ultimately, these techniques may be combined to attain the utmost in device performance.

Fabrication and Characterization of Gallium Nitride High Electron Mobility Transistors

Author : Wendi Zhou
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (87 download)

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Book Synopsis Fabrication and Characterization of Gallium Nitride High Electron Mobility Transistors by : Wendi Zhou

Download or read book Fabrication and Characterization of Gallium Nitride High Electron Mobility Transistors written by Wendi Zhou and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: "Compound semiconductor gallium nitride high electron mobility transistors (HEMTs) have significant potential for use in the electronics industry, including radar applications and microwave transmitters for communications. These wide band gap semiconductors have unique material properties that lead to devices with high power, efficiency, and bandwidth compared with existing technologies. In this work, the electrical properties of gallium nitride HEMTs on silicon substrates were studied in the context of drain characteristics and breakdown voltage. The design, fabrication, and characterization of different devices are presented, in addition to a discussion on the effects of annealing and different gate contact materials. While demonstrating considerable promise in the field of high power radio frequency (RF) applications, this technology is yet immature and several fabrication issues still need to be addressed. The goal of this work is to represent a stepping stone in further developing this technology to be used in high power devices." --

Vertical Gallium Nitride PowerDevices: Fabrication and Characterisation

Author : Rico Hentschel
Publisher : BoD – Books on Demand
ISBN 13 : 3752641762
Total Pages : 156 pages
Book Rating : 4.7/5 (526 download)

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Book Synopsis Vertical Gallium Nitride PowerDevices: Fabrication and Characterisation by : Rico Hentschel

Download or read book Vertical Gallium Nitride PowerDevices: Fabrication and Characterisation written by Rico Hentschel and published by BoD – Books on Demand. This book was released on 2021-01-03 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: Efficient power conversion is essential to face the continuously increasing energy consumption of our society. GaN based vertical power field effect transistors provide excellent performance figures for power-conversion switches, due to their capability of handling high voltages and current densities with very low area consumption. This work focuses on a vertical trench gate metal oxide semiconductor field effect transistor (MOSFET) with conceptional advantages in a device fabrication preceded GaN epitaxy and enhancement mode characteristics. The functional layer stack comprises from the bottom an n+/n--drift/p-body/n+-source GaN layer sequence. Special attention is paid to the Mg doping of the p-GaN body layer, which is a complex topic by itself. Hydrogen passivation of magnesium plays an essential role, since only the active (hydrogen-free) Mg concentration determines the threshold voltage of the MOSFET and the blocking capability of the body diode. Fabrication specific challenges of the concept are related to the complex integration, formation of ohmic contacts to the functional layers, the specific implementation and processing scheme of the gate trench module and the lateral edge termination. The maximum electric field, which was achieved in the pn- junction of the body diode of the MOSFET is estimated to be around 2.1 MV/cm. From double-sweep transfer measurements with relatively small hysteresis, steep subthreshold slope and a threshold voltage of 3 - 4 V a reasonably good Al2O3/GaN interface quality is indicated. In the conductive state a channel mobility of around 80 - 100 cm2/Vs is estimated. This value is comparable to device with additional overgrowth of the channel. Further enhancement of the OFF-state and ON-state characteristics is expected for optimization of the device termination and the high-k/GaN interface of the vertical trench gate, respectively. From the obtained results and dependencies key figures of an area efficient and competitive device design with thick drift layer is extrapolated. Finally, an outlook is given and advancement possibilities as well as technological limits are discussed.

Power GaN Devices

Author : Matteo Meneghini
Publisher : Springer
ISBN 13 : 3319431994
Total Pages : 383 pages
Book Rating : 4.3/5 (194 download)

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Book Synopsis Power GaN Devices by : Matteo Meneghini

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

GaN Transistors for Efficient Power Conversion

Author : Alex Lidow
Publisher : John Wiley & Sons
ISBN 13 : 1118844769
Total Pages : 266 pages
Book Rating : 4.1/5 (188 download)

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Book Synopsis GaN Transistors for Efficient Power Conversion by : Alex Lidow

Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2014-09-15 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium nitride (GaN) is an emerging technology that promises to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost. This timely second edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. With higher-frequency switching capabilities, GaN devices offer the chance to increase efficiency in existing applications such as DC–DC conversion, while opening possibilities for new applications including wireless power transfer and envelope tracking. This book is an essential learning tool and reference guide to enable power conversion engineers to design energy-efficient, smaller and more cost-effective products using GaN transistors. Key features: Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications. Contains useful discussions on device–circuit interactions, which are highly valuable since the new and high performance GaN power transistors require thoughtfully designed drive/control circuits in order to fully achieve their performance potential. Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors – see companion website for further details. A valuable learning resource for professional engineers and systems designers needing to fully understand new devices as well as electrical engineering students.

Surface and Mechanical Stress Effects in AlGaN/GaN High Electron Mobility Transistors

Author : Sameer Jayanta Joglekar
Publisher :
ISBN 13 :
Total Pages : 161 pages
Book Rating : 4.:/5 (1 download)

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Book Synopsis Surface and Mechanical Stress Effects in AlGaN/GaN High Electron Mobility Transistors by : Sameer Jayanta Joglekar

Download or read book Surface and Mechanical Stress Effects in AlGaN/GaN High Electron Mobility Transistors written by Sameer Jayanta Joglekar and published by . This book was released on 2017 with total page 161 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Nitride (GaN) belongs to a class of materials called wide band-gap semiconductors. In recent years, the versatile nature of this material has been exploited for a wide range of applications from solid state lighting to RF and microwave communication, as well as high power switching. The first part of this thesis discusses planar AlGaN/GaN transistors. GaN is a piezoelectric material, and changes in mechanical stress result in a change in the charge density which in turn affects the maximum current in AlGaN/GaN transistors. Finite element modelling techniques were applied to quantify the mechanical stress distribution in planar AlGaN/GaN RF transistors resulting from device fabrication, and operation in the on- and off-state. Thereafter, two important surface and interface effects were studied in this thesis. In the first one, the impact of surface cleanings, surface treatments and plasma-based dry etch conditions on two different types of ohmic contact technologies was investigated. Contact resistance measurements were correlated with surface characterization results. The second was that of interface positive charges at the Al2O3-GaN interface and the increase in electron density in the device resulting from them. In both these problems, a combination of device electrical measurements and material characterization techniques was used to establish direct correlations between device behavior and material properties. The second part of the thesis deals exclusively with nano-ribbon (NR) or fin-like AlGaN/GaN transistors. Fundamental transport properties of charge density and mobility in NR devices were studied in order to understand the difference in behavior of these devices from planar devices. The influence of passivation films on the charge density in these structures was investigated, using Al2O3 passivation as a specific example. Electron mobility degradation due to sidewall-scattering in NR devices was quantified using different mobility extraction methods based on device measurements. The thesis concludes with a potential application of NR AlGaN/GaN transistors for high linearity power amplification. A new kind of transistor with varying threshold voltages along the gate width is proposed to improve the DC and RF linearity of GaN-based devices.

P-Channel Gallium Nitride Transistor on Si Substrate

Author : Nadim Chowdhury
Publisher :
ISBN 13 :
Total Pages : 80 pages
Book Rating : 4.:/5 (18 download)

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Book Synopsis P-Channel Gallium Nitride Transistor on Si Substrate by : Nadim Chowdhury

Download or read book P-Channel Gallium Nitride Transistor on Si Substrate written by Nadim Chowdhury and published by . This book was released on 2018 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Nitride, a wide bandgap (3.4 eV) semiconductor, has outstanding attributes, such as, high breakdown electric field, high electron mobility, which make it suitable for applications requiring high power and high operating frequencies. These intrinsic material properties have been the major driving force to the development of high speed and high power GaN based n-channel transistors (mostly in the form of AlGaN/GaN High Electron Mobility Transistors). However, the full potential of GaN technology cannot be reached without the existence of p-channel GaN transistors. These devices are required for efficient high side switching in the converter circuits and for GaNCMOS technology. Therefore, the aim of this work is to demonstrate a GaN-CMOS compatible p-channel transistor. A stack of MOCVD grown epitaxial layers, is chosen for this work which has both 2-dimensional electron gas (2-DEG) for n-channel transistor and 2-dimensional hole gas (2-DHG) for p-channel transistor. The epitaxial layers chosen for this work are as follows, p++ - GaN (20 nm)/p-GaN (50 nm)/UID-GaN (20 nm)/Alo.25Gao. 75N (20 nm)/UID-GaN (150 nm)/GaNBuffer (3.8 ptm)/Si (1000 [mu]m). From device fabrication point of view, the difficulty of demonstrating a high performing p-channel GaN transistor can be attributed to the high source and drain contact resistances. In this thesis, we successfully improved the contact resistances through the development of optimum fabrication process, and a record contact resistivity of 4.83 x 10-6 [Omega]2 - cm 2 to p type-GaN was demonstrated. Finally, for the first time, a recessed gate p-channel GaN transistor on Si substrate was demonstrated. Direct current measurement of our fabricated devices show excellent off-state characteristics: ION/IOFF 5 , SS= 280 mV/decade and IOFF=- nA/mm. Measured on state characteristics for 2 pm channel length devices are, Ron= 1.7 k[omega]-mm as VGS=12 V, ION=- 3 .5 mA/mm at VGS=10 V and VDs=5 V. From the current-voltage and capacitance-voltage characteristics of 100 pm channel length devices, 2-DHG density and hole C, 2 mobility were found to be 2.4 x 1012 cm 2 and 11cm2/v.s , respectively.

GaN Transistors for Efficient Power Conversion

Author : Alex Lidow
Publisher : John Wiley & Sons
ISBN 13 : 1119594421
Total Pages : 470 pages
Book Rating : 4.1/5 (195 download)

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Book Synopsis GaN Transistors for Efficient Power Conversion by : Alex Lidow

Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2019-08-12 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.

Design and Fabrication of Nitrogen Polar Gallium Nitride Vertical Transistors for High-power and High-frequency Applications

Author : Saba Rajabi
Publisher :
ISBN 13 : 9781085572613
Total Pages : pages
Book Rating : 4.5/5 (726 download)

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Book Synopsis Design and Fabrication of Nitrogen Polar Gallium Nitride Vertical Transistors for High-power and High-frequency Applications by : Saba Rajabi

Download or read book Design and Fabrication of Nitrogen Polar Gallium Nitride Vertical Transistors for High-power and High-frequency Applications written by Saba Rajabi and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium nitride (GaN) has remarkable potential to extend the silicon-based semiconductor industry, which is currently plateauing in performance due to its materials limits Any significant improvement comes with a price that may not be a sustainable way to support the need for next generation electronic devices. With a more efficient semiconductor, such as a GaN, engineers could design and fabricate compact devices with ultra-high-scale density, because of GaN’s high electric field strength, saturation velocity, and electron mobility. Studies have already indicated that GaN device technology has tremendous potential for high-frequency communications and photonic applications. Because of advances in growth on commercially feasible large-area substrates, high radio frequency (RF) power applications of GaN are approaching commercialization. The basic material properties of GaN translate to smaller devices, which can lead to higher operation frequencies and lower switching losses. At the same time, the component count and size of passives has decreased. To date, most reported GaN-based field effect transistors have been in a Gallium polar (Ga-polar) orientation. Recent reports have suggested that Nitrogen polar (N-polar) GaN device technology is highly attractive for high RF power applications. The reverse polarization field in N-polar GaN compared to Ga-polar GaN promises unique design advantages. For example, an Al(Ga)N back barrier induces two-dimensional electron gas (2DEG) in the GaN channel and simultaneously confines electrons into the channel. Because of improved electron confinement in the channel and the higher aspect ratio, N-polar devices can presumably achieve superior performance. Additionally, N-polar devices offer lower specific contact resistance since the contacts to the 2DEG occur through GaN rather than wider-bandgap AlGaN material, which is necessary in Ga-polar devices. Previous results have clearly established that vertical devices in the form of current aperture vertical electron transistors (CAVETs) produce dispersion-less output current-voltage (IV) characteristics with a higher blocking electric field than that of lateral devices. The electric field being buried in the bulk of the material is helpful to achieve dispersion-less output characteristics compared to high electron mobility transistors (HEMTs), where surface states cause “knee walkout” or current collapse under high frequencies. Therefore, merging a N-polar high aspect ratio channel with a vertical drift region, as a CAVET does, is an attractive design to accomplish higher RF power performance compared to lateral counterparts. An integral part of a CAVET is the current blocking layer (CBL), which blocks the current flow from all paths except the aperture. Ga-polar CAVETs have been developed with either a Mg-doped GaN CBL or [Mg2+] ion-implanted GaN CBL. The latter is an attractive technique since it can alleviate regrowth in trenches. Notably, Mg ions diffuse out during the channel regrowth process at high temperatures. An AlN interlayer with a thickness of less than a nanometer is an effective solution to stop Mg ions from diffusing out into the channel layer and thereby causing uncontrollable threshold voltage shifts. It is crucial to mention that an AlN back barrier is an essential part of the structure of a vertical N-polar device design, as it is necessary to form the 2DEG channel as well as a diffusion barrier to arrest Mg out-diffusion. Thus, it renders N-polar vertical devices an especially appealing class of devices for RF application.This dissertation aims to provide a physical understanding and insight regarding the N-polar CAVET as well as the device’s design, performance and thermal analysis.

Electrical and Electronic Devices, Circuits, and Materials

Author : Suman Lata Tripathi
Publisher : John Wiley & Sons
ISBN 13 : 1119755085
Total Pages : 608 pages
Book Rating : 4.1/5 (197 download)

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Book Synopsis Electrical and Electronic Devices, Circuits, and Materials by : Suman Lata Tripathi

Download or read book Electrical and Electronic Devices, Circuits, and Materials written by Suman Lata Tripathi and published by John Wiley & Sons. This book was released on 2021-03-24 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: The increasing demand for electronic devices for private and industrial purposes lead designers and researchers to explore new electronic devices and circuits that can perform several tasks efficiently with low IC area and low power consumption. In addition, the increasing demand for portable devices intensifies the call from industry to design sensor elements, an efficient storage cell, and large capacity memory elements. Several industry-related issues have also forced a redesign of basic electronic components for certain specific applications. The researchers, designers, and students working in the area of electronic devices, circuits, and materials sometimesneed standard examples with certain specifications. This breakthrough work presents this knowledge of standard electronic device and circuit design analysis, including advanced technologies and materials. This outstanding new volume presents the basic concepts and fundamentals behind devices, circuits, and systems. It is a valuable reference for the veteran engineer and a learning tool for the student, the practicing engineer, or an engineer from another field crossing over into electrical engineering. It is a must-have for any library.

Wide Bandgap Based Devices

Author : Farid Medjdoub
Publisher : MDPI
ISBN 13 : 3036505660
Total Pages : 242 pages
Book Rating : 4.0/5 (365 download)

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Book Synopsis Wide Bandgap Based Devices by : Farid Medjdoub

Download or read book Wide Bandgap Based Devices written by Farid Medjdoub and published by MDPI. This book was released on 2021-05-26 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices

Gallium Nitride (GaN)

Author : Farid Medjdoub
Publisher : CRC Press
ISBN 13 : 1482220040
Total Pages : 372 pages
Book Rating : 4.4/5 (822 download)

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Book Synopsis Gallium Nitride (GaN) by : Farid Medjdoub

Download or read book Gallium Nitride (GaN) written by Farid Medjdoub and published by CRC Press. This book was released on 2017-12-19 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.

Gallium Nitride High Electron Mobility Transistors on Native Substrates for Power Switching Applications

Author : Muhammad Alshahed
Publisher :
ISBN 13 : 9783844068856
Total Pages : pages
Book Rating : 4.0/5 (688 download)

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Book Synopsis Gallium Nitride High Electron Mobility Transistors on Native Substrates for Power Switching Applications by : Muhammad Alshahed

Download or read book Gallium Nitride High Electron Mobility Transistors on Native Substrates for Power Switching Applications written by Muhammad Alshahed and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fabrication of AlGaN-GaN-InN High Electron Mobility Transistors

Author :
Publisher :
ISBN 13 :
Total Pages : 10 pages
Book Rating : 4.:/5 (742 download)

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Book Synopsis Fabrication of AlGaN-GaN-InN High Electron Mobility Transistors by :

Download or read book Fabrication of AlGaN-GaN-InN High Electron Mobility Transistors written by and published by . This book was released on 2002 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt: The effect of various growth parameters such as temperature, V/III ratio and the growth rate on the properties of InN layers grown by MOCVD was investigated. The InN layers were deposited onto 2 micrometer thick GaN-on-c-plane sapphire films. In addition, the different precursor injection procedures were investigated. Since the growth of InN required very low deposition temperatures around 600 deg. C, for the deposition of InN/GaN heterostructures similar experiments were performed to optimize the growth of GaN at comparable growth temperatures. The fabrication of GaN/InN/GaN structures for device applications was complicated by intermixing and surface segregation of indium and defect formation in heterostructures related to the large lattice mismatch of 10% between GaN and InN.

Fabrication and Characterization of Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors

Author : Vinayak Tilak
Publisher :
ISBN 13 :
Total Pages : 312 pages
Book Rating : 4.:/5 (529 download)

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Book Synopsis Fabrication and Characterization of Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors by : Vinayak Tilak

Download or read book Fabrication and Characterization of Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors written by Vinayak Tilak and published by . This book was released on 2002 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Simulation and Fabrication of GaN-based Vertical and Lateral Normally-off Power Transistors

Author : Yuhao Zhang (S.M.)
Publisher :
ISBN 13 :
Total Pages : 98 pages
Book Rating : 4.:/5 (861 download)

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Book Synopsis Simulation and Fabrication of GaN-based Vertical and Lateral Normally-off Power Transistors by : Yuhao Zhang (S.M.)

Download or read book Simulation and Fabrication of GaN-based Vertical and Lateral Normally-off Power Transistors written by Yuhao Zhang (S.M.) and published by . This book was released on 2013 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis is divided in two parts. First, self-consistent electro-thermal simulations have been performed for single finger and multi-finger GaN-based vertical and lateral power transistors and were validated with experimental DC characteristics. The models were used to study the thermal performance of GaN-based vertical metal oxide semiconductor field-effect transistors (MOSFETs) and the lateral high electron mobility transistors (HEMTs) designed for different breakdown voltage application and at different size scaling levels. The comparison between two structures revealed that the vertical MOSFETs have the potential to achieve an up to 50% higher thermal performance, especially for higher breakdown voltage and higher size scaling level designs. Second, normally-off lateral MOS-HEMTs were developed by the combination of fluorine plasma treatment and high-temperature gate oxide deposition. Record performances have been achieved for the fluorinated MOS-HEMTs with a threshold voltage >3.5 V, a low on-resistance ~ 2 m[Omega]·cm2, a small threshold voltage hysteresis ~0.15 V, high enhancement-mode channel mobility ~ 1000 cm2V-1s-1, a breakdown voltage ~ 780 V, no current collapse and a stability with 24 h continuous on-state operation at 250 oC. In addition, an analytical model for the threshold voltage of fluorinated MOS-HEMTs was established for the first time, to enable accurate design and engineering of the threshold voltage for MOS-HEMTs. This novel technology has been demonstrated as promising to fabricate high-performance normally-off MOS-HEMTs.