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Fabrication And Electrical Characterization Of Pisi Ie Ptsi Schottky Barrier Diode
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Book Synopsis Fabrication and Electrical Characterization of PiSi [i.e. PtSi] Schottky Barrier Diode by : Sultan Ul-Alam Chowdhury
Download or read book Fabrication and Electrical Characterization of PiSi [i.e. PtSi] Schottky Barrier Diode written by Sultan Ul-Alam Chowdhury and published by . This book was released on 1993 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Electrical Characterization in Quasi-Vertical GaN Trench Schottky Barrier Diode by :
Download or read book Fabrication and Electrical Characterization in Quasi-Vertical GaN Trench Schottky Barrier Diode written by and published by . This book was released on 2023 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Characterization of Schottky-barrier Diodes for Mixer Applications by : James A. Griffin
Download or read book Fabrication and Characterization of Schottky-barrier Diodes for Mixer Applications written by James A. Griffin and published by . This book was released on 1979 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical Characterisation of Schottky Barrier Diodes Fabricated on GaAs by Electron Beam Metallisation by : Enoch Mpho Sithole
Download or read book Electrical Characterisation of Schottky Barrier Diodes Fabricated on GaAs by Electron Beam Metallisation written by Enoch Mpho Sithole and published by . This book was released on 2001 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Characterization of Ruthenium Schottky-barrier Photo Diodes by : Garland A. King
Download or read book Fabrication and Characterization of Ruthenium Schottky-barrier Photo Diodes written by Garland A. King and published by . This book was released on 1980 with total page 73 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Electrical/optical Characterization of Bulk GaN-based Schottky Diodes by :
Download or read book Fabrication and Electrical/optical Characterization of Bulk GaN-based Schottky Diodes written by and published by . This book was released on 2009 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Conduction Mechanisms of Tungsten Diselenide Based Schottky Diodes by : Achamma Bobby
Download or read book Conduction Mechanisms of Tungsten Diselenide Based Schottky Diodes written by Achamma Bobby and published by LAP Lambert Academic Publishing. This book was released on 2011-01 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a study of physical and electrical behaviour of fabricated p-type WSe2 based Schottky diodes coated with different metals and of different thickness.The book opens with a brief narration on the importance of Schottky barrier diodes alongwith a discussion on transitional metal dichalcogenides with specific emphasis to WSe2. The theoretical aspects of Schottky barriers, the growth technique of WSe2 crystals, its structural and compositional characterizations, determination of type and carrier concentrations, method of fabrication of Schottky diodes etc are provided for background information.The detailed analysis of the electrical characterization of these WSe2 diodes is the main theme of the book. The book winds up wth the summary of the results obtained, the conclusions arrived at and a concise discussion on the prospective work.
Book Synopsis Fabrication and Characterization of Schottky-barrier Mixer Diodes by : Herman A. Belcher
Download or read book Fabrication and Characterization of Schottky-barrier Mixer Diodes written by Herman A. Belcher and published by . This book was released on 1981 with total page 99 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Properties of SiC Barrier Diodes Fabricated with Ti Schottky Contacts by : Krishna Chaitanya Kundeti
Download or read book The Properties of SiC Barrier Diodes Fabricated with Ti Schottky Contacts written by Krishna Chaitanya Kundeti and published by . This book was released on 2017 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt: Titanium (Ti) is a popular metal contact used in fabricating Schottky barrier diodes on silicon carbide (SiC) semiconductor. In this research, Ti/4H-SiC Schottky barrier diodes have been fabricated to investigate the effect of deposition temperature and annealing on the electrical characteristics of the fabricated devices. The parameters such as barrier height, ideality factor and on-resistance were determined from the current-voltage (I-V) and the capacitance-voltage (C-V) measurements at room temperature. The temperature-dependent electrical characteristics are realized by performing current-voltage-temperature (I-V-T) measurements. Furthermore, the material characterizations were performed using Auger Electron Spectroscopy (AES) and x-ray diffraction (XRD) measurements. Thin films of Titanium (Ti) as Schottky contacts were deposited on n-type 4H-SiC substrate by magnetron sputtering at different temperatures form room temperature ~25 °C to 900 °C. In addition, thermal processing was performed by annealing at 500 °C in vacuum and argon environment up to 60 hours and characterized using I-V, C-V, and I-V-T measurements accordingly. The diodes with Ti deposited at 200 °C yield better devices with an average ideality factor of 1.04 and Schottky barrier height of 1.13 eV. The electrical properties shows that the deposition of Schottky contact should be at least below 700 °C and the Schottky contact should be annealed at 500 °C for 12-36 hours in order to obtain acceptable quality of Schottky diode. We believe that these variations in the electrical properties are due to the change in the quality of interfacial layer. The variations in physical/compositional properties of Ti/SiC interface has been investigated using Auger electron spectroscopy and x-ray diffraction, which reveled mainly two kinds of phases: Ti5Si3 and Ti3SiC2 formed at the interfacial layer.
Book Synopsis Schottky Barrier Diode Fabrication on N-GaN for Altraviolet Detection by : Mmantsae Moche Diale
Download or read book Schottky Barrier Diode Fabrication on N-GaN for Altraviolet Detection written by Mmantsae Moche Diale and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: There are many potential areas for the utilization of GaN-based nitride materials, including ultraviolet photodetectors. Ultraviolet photodetectors are used in the military for missile plume detection and space communications. Medically, ultraviolet photodiodes are used in monitoring skin cancer. Schottky barrier metal-semiconductor contacts are choice devices for the manufacture of ultraviolet photodiodes due to higher short wavelength sensitivity and fast response. They also require simple fabrication technology: suffer lower breakdown voltages, and record larger leakage currents at lower voltages as compared to p-n structures of the same semiconductor material. Thus the formation of a Schottky contact with high barrier height, low leakage current, and good thermal stability in order to withstand high temperature processing and operation are some of the most important factors in improving the performance of Schottky barrier photodiodes to be used for ultraviolet detection. The first stage of this study was to establish a chemical cleaning and etching technique. It was found that KOH was suitable in reducing C from the surface and that (NH4)2S further reduced the surface oxides. The next phase of the work was to select a metal that will allow UV light to pass through at a high transmission percentage: a combination of annealed Ni/Au was found to be ideal. The transmission percentage of this alloy was found to be above 80%. The next phase was the fabrication of Ni/Au Schottky barrier diodes on GaN to study the electrical characteristics of the diodes. Electrical characterization of the diodes showed that the dominant current transport mechanism was thermionic emission, masked by the effects of series resistance, which resulted from the condition of the GaN surface. Finally, we fabricated GaN UV photodiodes and characterized them in the optoelectronic station designed and produced during this research. Device responsivity as high as 31.8 mA/W for GaN and 3.8 mA/W for AlGaN were recorded. The calculated quantum efficiencies of the photodiodes were 11 % for GaN and 1.7 % for AlGaN respectively.
Book Synopsis Fabrication and Characterization of Au-InAsxP1-x Schottky Barrier Diodes by : Tsuo-Tong Teng
Download or read book Fabrication and Characterization of Au-InAsxP1-x Schottky Barrier Diodes written by Tsuo-Tong Teng and published by . This book was released on 1973 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Rapid Thermal and Integrated Processing VII by : Materials Research Society
Download or read book Rapid Thermal and Integrated Processing VII written by Materials Research Society and published by . This book was released on 1998 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Rapid Thermal and Integrated Processing by :
Download or read book Rapid Thermal and Integrated Processing written by and published by . This book was released on 1998 with total page 914 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Infrared Detectors and Emitters: Materials and Devices by : Peter Capper
Download or read book Infrared Detectors and Emitters: Materials and Devices written by Peter Capper and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date view of the various detector/emitter materials systems currently in use or being actively researched. The book is aimed at newcomers and those already working in the IR industry. It provides both an introductory text and a valuable overview of the entire field.
Book Synopsis Long Wavelength Infrared Detectors by : Manijeh Razeghi
Download or read book Long Wavelength Infrared Detectors written by Manijeh Razeghi and published by CRC Press. This book was released on 2020-03-09 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt: This timely work presents a comprehensive overview of the development of new generations of infrared detectors based on artificially synthesized quantum structures. The growth of quantum wells and superlattices is well documents in this volume, as are the principal new superlattice technologies for long wavelength infrared detection. Featuring insightful contributions from researchers working at the "cutting edge" of this exciting field, this volume is sure to become an essential reference for advanced graduate students and researchers alike.
Book Synopsis Handbook of Monochromatic XPS Spectra by : B. Vincent Crist
Download or read book Handbook of Monochromatic XPS Spectra written by B. Vincent Crist and published by John Wiley & Sons. This book was released on 2000-10-19 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt: These three volumes provide comprehensive information about the instrument, the samples, and the methods used to collect the spectra. The spectra are presented on a landscape format and cover a wide variety of elements,polymers, semiconductors, and other materials. Offers a clear presentation of spectra with the rightamount of experimental detail. All of the experiments have been conducted under controlled conditions on the same instrument by aworld-renowned expert.
Book Synopsis Handbook of Thin Film Technology by : Leon I. Maissel
Download or read book Handbook of Thin Film Technology written by Leon I. Maissel and published by McGraw-Hill Companies. This book was released on 1970 with total page 1238 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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