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Fabrication And Characterization Of Gallium Nitride Based Heterojunctions Etched By Photoelectrochemical Wet Etching
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Book Synopsis Fabrication and Characterization of Gallium Nitride Based Heterojunctions Etched by Photoelectrochemical Wet Etching by : Jie Gao
Download or read book Fabrication and Characterization of Gallium Nitride Based Heterojunctions Etched by Photoelectrochemical Wet Etching written by Jie Gao and published by . This book was released on 2006 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication of Porous Gallium Nitride by Photoelectrochemical Etching Method (Penerbit USM) by : Cheah Sook Fong
Download or read book Fabrication of Porous Gallium Nitride by Photoelectrochemical Etching Method (Penerbit USM) written by Cheah Sook Fong and published by Penerbit USM. This book was released on 2017 with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photoelectrochemical (PEC) etching is a simple and inexpensive wet etching approach that is widely used to fabricate porous gallium nitride (GaN) thin films. However, many fundamental issues on the etching mechanism and the optical response of the fabricated porous structure still remain unclear. In this book, PEC etched porous GaN thin films with a variety of morphologies such as circular, hexagonal, leaf like-, and honeycomb-like patterns were described in detail. The effects of semiconductor types, etching voltage and etching duration on the surface morphology and the optical response of the fabricated porous structure were discussed. Attenuated total reflection method which is very sensitive to the surface layer of the porous GaN was applied to extract the carrier concentration, porosity, and layer thicknesses or the porous layer. Through this book, a better understanding of the PEC etching of the porous GaN can be obtained.
Book Synopsis Fabrication and Characterization of Gallium Nitride Based Devices by : Atanu Das
Download or read book Fabrication and Characterization of Gallium Nitride Based Devices written by Atanu Das and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance by : Robert F Davis
Download or read book Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance written by Robert F Davis and published by World Scientific. This book was released on 2004-05-07 with total page 295 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
Book Synopsis Fabrication and Characterization of Gallium Nitride Based Diodes by : Yaqi Wang
Download or read book Fabrication and Characterization of Gallium Nitride Based Diodes written by Yaqi Wang and published by . This book was released on 2011 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Nitride Processing for Electronics, Sensors and Spintronics by : Stephen J. Pearton
Download or read book Gallium Nitride Processing for Electronics, Sensors and Spintronics written by Stephen J. Pearton and published by Springer Science & Business Media. This book was released on 2006-07-06 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
Book Synopsis Fabrication and Characterization of Gallium Nitride Based Working Electrodes for Hydrogen Generation by Water Photoelectrolysis by : 劉書巖
Download or read book Fabrication and Characterization of Gallium Nitride Based Working Electrodes for Hydrogen Generation by Water Photoelectrolysis written by 劉書巖 and published by . This book was released on 2012 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Characterization of Gallium Nitride Biointerfaces by : Corey Michael Foster
Download or read book Fabrication and Characterization of Gallium Nitride Biointerfaces written by Corey Michael Foster and published by . This book was released on 2013 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Photoelectrochemical Etching of GaN for High Quality Optical Devices by : Adele C. Tamboli
Download or read book Photoelectrochemical Etching of GaN for High Quality Optical Devices written by Adele C. Tamboli and published by . This book was released on 2009 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium nitride has become an important semiconductor material for a variety of device applications, including light emitting diodes (LEDs), lasers, and transistors. One of the main challenges in GaN device fabrication is the chemical stability of GaN which leads to a lack of wet etching techniques. Instead, dry etching is used almost exclusively, leading to ion damage and poor selectivity between different layers. In this dissertation, we discuss photoelectrochemical (PEC) etching, a photoassisted wet etch technique that can be used to etch GaN and its alloys. We develop new aspects of this technique to extend its applicability to a larger variety of devices and use the technique to fabricate a few optical devices, including microdisk lasers.
Book Synopsis Fabrication and Characterization of Gallium Nitride Electronic Devices by : Jerry Wayne Johnson
Download or read book Fabrication and Characterization of Gallium Nitride Electronic Devices written by Jerry Wayne Johnson and published by . This book was released on 2001 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design, Fabrication, and Characterzation of Gallium Nitride High Power Rectifiers by : Kwang Hyeon Baik
Download or read book Design, Fabrication, and Characterzation of Gallium Nitride High Power Rectifiers written by Kwang Hyeon Baik and published by . This book was released on 2004 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Characterization of Gallium Nitride Electroluminescent Devices Co-doped with Rare Earth and Silicon by : Wang Rui
Download or read book Fabrication and Characterization of Gallium Nitride Electroluminescent Devices Co-doped with Rare Earth and Silicon written by Wang Rui and published by . This book was released on 2009 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rare Earth (RE) doped III-nitrides are being widely investigated for potential applications in optical communication and displays, due to the wide and direct energy bandgap of GaN resulting in low thermal quenching of RE ion sharp emission from ultraviolet (UV) through visible to infrared (IR) region. The UC Nanolab has been conducting RE doped GaN research for more than 10 years and many achievements were obtained, ranging from material growth to device fabrication. This dissertation studied RE emission in GaN material, focusing on the effects of electronic impurity (Si) co-doping on RE luminescence. Advanced RE doped GaN electroluminescent devices (ELDs) were also designed and fabricated. Detailed device characterization was carried out and the effect of co-dopant was investigated. Eu-doped GaN thin films were grown on sapphire wafers by molecular beam epitaxy (MBE) technique and the growth conditions were optimized for the strongest Eu luminescence. It was found that GaN thin film quality and Eu doping concentration mutually affected Eu luminescence. High quality GaN:Eu thin films were grown under Ga rich condition (III/V>1), but the strongest Eu luminescence was obtained under slightly N rich condition (III/V1). The optimum Eu doping concentration is ~0.1-1.0at.%, depending on the GaN:Eu thin film quality. Higher growth temperature (750°C) was also found to enhance Eu luminescence intensity (~10x) and efficiency (~30x). The effect of Si co-doping in GaN:RE thin films was investigated. Eu photoluminescence (PL) was enhanced ~5-10x by moderate Si co-doping (~0.05at.%) mostly due to the increase of Eu PL lifetime, but decreased very fast at high Si co-doping concentration (>0.08at.%). The increase of Eu PL lifetime is possibly due to the incorporation of Si uniformly distributing Eu ions and shielding Eu-Eu interactions. Combined with the increase in excitation cross section and carrier flux, there is a significant enhancement on Eu PL intensity. The electrical properties of GaN:RE thin films were changed from high resistive to weakly n-type due to increased electron concentration introduced by Si co-doping. GaN:RE ELDs were fabricated and the electrical and optical properties were studied by I-V and electroluminescence (EL) measurements. A hetero-junction PIN structure was designed on n-GaN:Si/GaN:RE/p-Si, employing p-Si substrates as p-type conductive layer. RE ions EL emission was found to be much stronger under forward bias than under reverse bias. The Si co-doping was also studied in GaN:RE ELDs. It was found that Er EL had strong visible & IR emission under forward bias, while there is little or no emission under reverse bias. A pn hetero-junction structure formed between p-Si and n-GaN:(Si, Er) layers was proposed to be responsible for the emission control. GaN:(Si, Eu) AC thin film ELDs were also fabricated and shown that the Si co-doping increased the Eu ions emission intensity and efficiency.
Book Synopsis Fabrication and Characterization of Gallium Nitride Light Emitting Diodes by : Sejal N. Chheda
Download or read book Fabrication and Characterization of Gallium Nitride Light Emitting Diodes written by Sejal N. Chheda and published by . This book was released on 1996 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Characterization of Gallium Nitride Schottky Diode Devices for Determination of Electron-hole Pair Creation Energy and Intrinsic Neutron Sensitivity by : Padhraic Liam Mulligan
Download or read book Fabrication and Characterization of Gallium Nitride Schottky Diode Devices for Determination of Electron-hole Pair Creation Energy and Intrinsic Neutron Sensitivity written by Padhraic Liam Mulligan and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Photoelectrochemical Wet Etching of Gallium Nitride by : Christopher T. Youtsey
Download or read book Photoelectrochemical Wet Etching of Gallium Nitride written by Christopher T. Youtsey and published by . This book was released on 1999 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Performance Evaluation and Fabrication of Gallium Nitride (GaN) MEMS Devices by : NanLung Wu
Download or read book Performance Evaluation and Fabrication of Gallium Nitride (GaN) MEMS Devices written by NanLung Wu and published by . This book was released on 2010 with total page 81 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN and related group III nitrides were heavily investigated in the applications of lighting, solar cell and other optical devices. Many research have focused on improving crystal structure purity, light generating efficiency, power efficiency and band-gap manipulating. One of the exciting applications of GaN based devices is micro electrical mechanical system (MEMS). In this report, several mechanical properties, including Young's modulus, hardness, Poisson's ratio, thermal expansion, thermal conductivity and piezoelectricity, were discussed. By using finite element analysis (FEA) software further confirmed that GaN has better performance in both thermal and piezoelectric properties comparing to conventionally used silicon (Si). The simulation results showed that GaN performed much better than Si in the simulations of a sensor due to its high Young's modulus. Another simulation, a thermo-controlled actuator, showed that even though GaN and Si had similar thermal conductivity in high temperatures, the sensor of GaN performed better due to its higher thermal expansion coefficient in high temperature. Moreover, GaN is stable at high temperatures so that it is a more desirable than Si at high temperatures. In the end of this thesis, a special etching technique, PEC wet etching, was demonstrated by machining an InGaN/GaN epitaxial multilayer. The result showed that PEC technique was able to selectively etch InGaN thin films. However, the dislocations appeared to be an obstacle to obtain a smooth surface. Therefore, the assistance of dry etching might as well be needed. Although the quality of GaN thin film is still far from perfect, the superior properties of GaN and the effective fabrication method of GaN has been proved promising in this report.
Book Synopsis GaN and Related Materials by : Stephen J. Pearton
Download or read book GaN and Related Materials written by Stephen J. Pearton and published by CRC Press. This book was released on 2021-10-08 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.
