Fabrication And Characterization Of Beta Silicon Carbide Discrete Devices And Integrated Circuit

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Fundamentals of Silicon Carbide Technology

Author : Tsunenobu Kimoto
Publisher : John Wiley & Sons
ISBN 13 : 1118313526
Total Pages : 565 pages
Book Rating : 4.1/5 (183 download)

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Book Synopsis Fundamentals of Silicon Carbide Technology by : Tsunenobu Kimoto

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Silicon Carbide

Author : Wolfgang J. Choyke
Publisher : Springer Science & Business Media
ISBN 13 : 3642188702
Total Pages : 911 pages
Book Rating : 4.6/5 (421 download)

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Book Synopsis Silicon Carbide by : Wolfgang J. Choyke

Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 911 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.

Extreme Environment Electronics

Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 143987431X
Total Pages : 1041 pages
Book Rating : 4.4/5 (398 download)

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Book Synopsis Extreme Environment Electronics by : John D. Cressler

Download or read book Extreme Environment Electronics written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 1041 pages. Available in PDF, EPUB and Kindle. Book excerpt: Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.

American Doctoral Dissertations

Author :
Publisher :
ISBN 13 :
Total Pages : 796 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis American Doctoral Dissertations by :

Download or read book American Doctoral Dissertations written by and published by . This book was released on 1992 with total page 796 pages. Available in PDF, EPUB and Kindle. Book excerpt:

High Temperature Electronics

Author : F. Patrick McCluskey
Publisher : CRC Press
ISBN 13 : 9780849396236
Total Pages : 354 pages
Book Rating : 4.3/5 (962 download)

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Book Synopsis High Temperature Electronics by : F. Patrick McCluskey

Download or read book High Temperature Electronics written by F. Patrick McCluskey and published by CRC Press. This book was released on 1996-12-13 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of electronics that can operate at high temperatures has been identified as a critical technology for the next century. Increasingly, engineers will be called upon to design avionics, automotive, and geophysical electronic systems requiring components and packaging reliable to 200 °C and beyond. Until now, however, they have had no single resource on high temperature electronics to assist them. Such a resource is critically needed, since the design and manufacture of electronic components have now made it possible to design electronic systems that will operate reliably above the traditional temperature limit of 125 °C. However, successful system development efforts hinge on a firm understanding of the fundamentals of semiconductor physics and device processing, materials selection, package design, and thermal management, together with a knowledge of the intended application environments. High Temperature Electronics brings together this essential information and presents it for the first time in a unified way. Packaging and device engineers and technologists will find this book required reading for its coverage of the techniques and tradeoffs involved in materials selection, design, and thermal management and for its presentation of best design practices using actual fielded systems as examples. In addition, professors and students will find this book suitable for graduate-level courses because of its detailed level of explanation and its coverage of fundamental scientific concepts. Experts from the field of high temperature electronics have contributed to nine chapters covering topics ranging from semiconductor device selection to testing and final assembly.

Scientific and Technical Aerospace Reports

Author :
Publisher :
ISBN 13 :
Total Pages : 308 pages
Book Rating : 4.:/5 (3 download)

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Book Synopsis Scientific and Technical Aerospace Reports by :

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1992 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fundamentals of Semiconductor Manufacturing and Process Control

Author : Gary S. May
Publisher : John Wiley & Sons
ISBN 13 : 0471790273
Total Pages : 428 pages
Book Rating : 4.4/5 (717 download)

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Book Synopsis Fundamentals of Semiconductor Manufacturing and Process Control by : Gary S. May

Download or read book Fundamentals of Semiconductor Manufacturing and Process Control written by Gary S. May and published by John Wiley & Sons. This book was released on 2006-05-26 with total page 428 pages. Available in PDF, EPUB and Kindle. Book excerpt: A practical guide to semiconductor manufacturing from processcontrol to yield modeling and experimental design Fundamentals of Semiconductor Manufacturing and Process Controlcovers all issues involved in manufacturing microelectronic devicesand circuits, including fabrication sequences, process control,experimental design, process modeling, yield modeling, and CIM/CAMsystems. Readers are introduced to both the theory and practice ofall basic manufacturing concepts. Following an overview of manufacturing and technology, the textexplores process monitoring methods, including those that focus onproduct wafers and those that focus on the equipment used toproduce wafers. Next, the text sets forth some fundamentals ofstatistics and yield modeling, which set the foundation for adetailed discussion of how statistical process control is used toanalyze quality and improve yields. The discussion of statistical experimental design offers readers apowerful approach for systematically varying controllable processconditions and determining their impact on output parameters thatmeasure quality. The authors introduce process modeling concepts,including several advanced process control topics such asrun-by-run, supervisory control, and process and equipmentdiagnosis. Critical coverage includes the following: * Combines process control and semiconductor manufacturing * Unique treatment of system and software technology and managementof overall manufacturing systems * Chapters include case studies, sample problems, and suggestedexercises * Instructor support includes electronic copies of the figures andan instructor's manual Graduate-level students and industrial practitioners will benefitfrom the detailed exami?nation of how electronic materials andsupplies are converted into finished integrated circuits andelectronic products in a high-volume manufacturingenvironment. An Instructor's Manual presenting detailed solutions to all theproblems in the book is available from the Wiley editorialdepartment. An Instructor Support FTP site is also available.

Physics and Technology of Silicon Carbide Devices

Author : George Gibbs
Publisher :
ISBN 13 : 9781681176437
Total Pages : 284 pages
Book Rating : 4.1/5 (764 download)

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Book Synopsis Physics and Technology of Silicon Carbide Devices by : George Gibbs

Download or read book Physics and Technology of Silicon Carbide Devices written by George Gibbs and published by . This book was released on 2016-10-01 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.

Advancing Silicon Carbide Electronics Technology II

Author : Konstantinos Zekentes
Publisher : Materials Research Forum LLC
ISBN 13 : 164490067X
Total Pages : 293 pages
Book Rating : 4.6/5 (449 download)

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Book Synopsis Advancing Silicon Carbide Electronics Technology II by : Konstantinos Zekentes

Download or read book Advancing Silicon Carbide Electronics Technology II written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2020-03-15 with total page 293 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices, (3) Doping by Ion Implantation, (4) Plasma Etching and (5) Fabrication of Silicon Carbide Nanostructures and Related Devices. The book is also suited as supplementary textbook for graduate courses. Keywords: Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS).

NASA Patent Abstracts Bibliography

Author : United States. National Aeronautics and Space Administration. Scientific and Technical Information Program
Publisher :
ISBN 13 :
Total Pages : 600 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis NASA Patent Abstracts Bibliography by : United States. National Aeronautics and Space Administration. Scientific and Technical Information Program

Download or read book NASA Patent Abstracts Bibliography written by United States. National Aeronautics and Space Administration. Scientific and Technical Information Program and published by . This book was released on 1992 with total page 600 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon Device Processing

Author : Charles P. Marsden
Publisher :
ISBN 13 :
Total Pages : 472 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Silicon Device Processing by : Charles P. Marsden

Download or read book Silicon Device Processing written by Charles P. Marsden and published by . This book was released on 1970 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of the Symposium was to provide an opportunity for engineers and applied scientists actively engaged in the silicon device technology field to discuss the most advanced measurement methods for process control and materials characterization.The basic theme of the meeting was to stress the interdependence of measurements techniques, facilities, and materials as they relate to the overall problems of improving and advancing silicon device sciences and technologies.(Author).

Gallium Nitride And Silicon Carbide Power Devices

Author : B Jayant Baliga
Publisher : World Scientific Publishing Company
ISBN 13 : 9813109424
Total Pages : 592 pages
Book Rating : 4.8/5 (131 download)

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Book Synopsis Gallium Nitride And Silicon Carbide Power Devices by : B Jayant Baliga

Download or read book Gallium Nitride And Silicon Carbide Power Devices written by B Jayant Baliga and published by World Scientific Publishing Company. This book was released on 2016-12-12 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.

Silicon

Author : Paul Siffert
Publisher : Springer Science & Business Media
ISBN 13 : 3662098970
Total Pages : 552 pages
Book Rating : 4.6/5 (62 download)

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Book Synopsis Silicon by : Paul Siffert

Download or read book Silicon written by Paul Siffert and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: With topics ranging from epitaxy through lattice defects and doping to quantum computation, this book provides a personalized survey of the development and use of silicon, the basis for the revolutionary changes in our lives sometimes called "The Silicon Age." Beginning with the very first developments more than 50 years ago, this reports on all aspects of silicon and silicon technology up to its use in exciting new technologies, including a glance at possible future developments.

Wafer Bonding

Author : Marin Alexe
Publisher : Springer Science & Business Media
ISBN 13 : 9783540210498
Total Pages : 524 pages
Book Rating : 4.2/5 (14 download)

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Book Synopsis Wafer Bonding by : Marin Alexe

Download or read book Wafer Bonding written by Marin Alexe and published by Springer Science & Business Media. This book was released on 2004-05-14 with total page 524 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the past decade direct wafer bonding has developed into a mature materials integration technology. This book presents state-of-the-art reviews of the most important applications of wafer bonding written by experts from industry and academia. The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.

Digital Integrated Circuits

Author : John E. Ayers
Publisher : CRC Press
ISBN 13 : 1420069888
Total Pages : 468 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Digital Integrated Circuits by : John E. Ayers

Download or read book Digital Integrated Circuits written by John E. Ayers and published by CRC Press. This book was released on 2018-09-03 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt: Exponential improvement in functionality and performance of digital integrated circuits has revolutionized the way we live and work. The continued scaling down of MOS transistors has broadened the scope of use for circuit technology to the point that texts on the topic are generally lacking after a few years. The second edition of Digital Integrated Circuits: Analysis and Design focuses on timeless principles with a modern interdisciplinary view that will serve integrated circuits engineers from all disciplines for years to come. Providing a revised instructional reference for engineers involved with Very Large Scale Integrated Circuit design and fabrication, this book delves into the dramatic advances in the field, including new applications and changes in the physics of operation made possible by relentless miniaturization. This book was conceived in the versatile spirit of the field to bridge a void that had existed between books on transistor electronics and those covering VLSI design and fabrication as a separate topic. Like the first edition, this volume is a crucial link for integrated circuit engineers and those studying the field, supplying the cross-disciplinary connections they require for guidance in more advanced work. For pedagogical reasons, the author uses SPICE level 1 computer simulation models but introduces BSIM models that are indispensable for VLSI design. This enables users to develop a strong and intuitive sense of device and circuit design by drawing direct connections between the hand analysis and the SPICE models. With four new chapters, more than 200 new illustrations, numerous worked examples, case studies, and support provided on a dynamic website, this text significantly expands concepts presented in the first edition.

Current Sources and Voltage References

Author : Linden T. Harrison
Publisher : Elsevier
ISBN 13 : 0080455557
Total Pages : 603 pages
Book Rating : 4.0/5 (84 download)

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Book Synopsis Current Sources and Voltage References by : Linden T. Harrison

Download or read book Current Sources and Voltage References written by Linden T. Harrison and published by Elsevier. This book was released on 2005-08-22 with total page 603 pages. Available in PDF, EPUB and Kindle. Book excerpt: Current Sources and Voltage References provides fixed, well-regulated levels of current or voltage within a circuit. These are two of the most important "building blocks " of analog circuits, and are typically used in creating most analog IC designs. Part 1 shows the reader how current sources are created, how they can be optimized, and how they can be utilized by the OEM circuit designer. The book serves as a "must-have reference for the successful development of precision circuit applications. It shows practical examples using either BJTs, FETs, precision op amps, or even matched CMOS arrays being used to create highly accurate current source designs, ranging from nanoAmps to Amps. In each chapter the most important characteristics of the particular semiconductor type being studied are carefully reviewed. This not only serves as a helpful refresher for experienced engineers, but also as a good foundation for all EE student coursework, and includes device models and relevant equations.Part 2 focuses on semiconductor voltage references, from their design to their various practical enhancements. It ranges from the simple Zener diode to today's most advanced topologies, including Analog Devices' XFET® and Intersil's FGATM (invented while this book was being written). Over 300 applications and circuit diagrams are shown throughout this easy-to-read, practical reference book.* Discusses how to design low-noise, precision current sources using matched transistor pairs.* Explains the design of high power current sources with power MOSFETs* Gives proven techniques to reduce drift and improve accuracy in voltage references.

Power GaN Devices

Author : Matteo Meneghini
Publisher : Springer
ISBN 13 : 3319431994
Total Pages : 383 pages
Book Rating : 4.3/5 (194 download)

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Book Synopsis Power GaN Devices by : Matteo Meneghini

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.