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Fabrication And Characterization Of Beta Silicon Carbide Discrete Devices And Integrated Circuit
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Book Synopsis Fabrication and Characterization of Beta Silicon Carbide Discrete Devices and Integrated Circuit by : Kobchat Wongchotigul
Download or read book Fabrication and Characterization of Beta Silicon Carbide Discrete Devices and Integrated Circuit written by Kobchat Wongchotigul and published by . This book was released on 1992 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fundamentals of Silicon Carbide Technology by : Tsunenobu Kimoto
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Author :National Aeronautics and Space Administration (NASA) Publisher :Createspace Independent Publishing Platform ISBN 13 :9781722766245 Total Pages :34 pages Book Rating :4.7/5 (662 download)
Book Synopsis Silicon Carbide Semiconductor Device Fabrication and Characterization by : National Aeronautics and Space Administration (NASA)
Download or read book Silicon Carbide Semiconductor Device Fabrication and Characterization written by National Aeronautics and Space Administration (NASA) and published by Createspace Independent Publishing Platform. This book was released on 2018-07-11 with total page 34 pages. Available in PDF, EPUB and Kindle. Book excerpt: A number of basic building blocks i.e., rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films were fabricated and characterized. Gold forms a rectifying contact on beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it was possible to utilize Au contact diodes for electrically characterizing SiC films. Preliminary work indicates that sputtered Pt or Pt/Si contacts on beta SiC films are someways superior to Au contacts. Sputtered Pt layers on alpha SiC films form excellent rectifying contacts, whereas Ni layers following anneal at approximately 1050 C provide an ohmic contact. It has demonstrated that ion implantation of Al in substrates held at 550 C can be successfully employed for the fabrication of rectifying junction diodes. Feasibility of fabricating pnpn diodes and platinum gated MESFETs on alpha SiC films was also demonstrated. Davis, R. F. and Das, K. Unspecified Center N00014-85-K-0182; NAG3-782...
Book Synopsis Fabrication and Characterization of Silicon Carbide and Diamond Based Materials and Devices by : Kristofer J. Roe
Download or read book Fabrication and Characterization of Silicon Carbide and Diamond Based Materials and Devices written by Kristofer J. Roe and published by . This book was released on 2001 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Carbide Semiconductor Device Fabrication and Characterization by :
Download or read book Silicon Carbide Semiconductor Device Fabrication and Characterization written by and published by . This book was released on 1990 with total page 35 pages. Available in PDF, EPUB and Kindle. Book excerpt: A number of basic building blocks i.e. rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films have been fabricated and characterized. Gold forms a rectifying contact of beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it has been possible to utilize Au contact diodes for electrically characterizing SiC films.
Book Synopsis Advancing Silicon Carbide Electronics Technology I by : Konstantinos Zekentes
Download or read book Advancing Silicon Carbide Electronics Technology I written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2018-09-25 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.
Book Synopsis Physics and Technology of Silicon Carbide Devices by : George Gibbs
Download or read book Physics and Technology of Silicon Carbide Devices written by George Gibbs and published by . This book was released on 2016-10-01 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.
Book Synopsis Silicon Carbide Devices and Technology by : Bill Fraley
Download or read book Silicon Carbide Devices and Technology written by Bill Fraley and published by . This book was released on 2015-03-31 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book elaborately discusses the silicon carbide devices and their technology. Lately, a few Silicon Carbide (SiC¡) power devices like metal-oxide-semiconductor field-effect-transistors (MOSFETs), Schottky-barrier diodes (SBDs), junction FETs (JFETs), and their combined modules have been introduced in the market. However, to securely supply them and decrease their cost, further enhancements for material characterizations as well as for device processing are still required. This book comprehensively elucidates current technologies on processing, modeling, characterization, manufacturing, and other important aspects of SiC devices. The aim of this book is to serve as a helpful source of information for advancements in SiC devices.
Book Synopsis Fabrication and Characterization of Silicon Carbide (SiC) MESFET by : Kaushal D. Patel
Download or read book Fabrication and Characterization of Silicon Carbide (SiC) MESFET written by Kaushal D. Patel and published by . This book was released on 2017 with total page 69 pages. Available in PDF, EPUB and Kindle. Book excerpt: This research work is dealt with the fabrication of the optically triggered silicon carbide MESFET. The fabrication of the silicon carbide MESFET device has been chronologically described to study the device structure, process development, and material properties. In order to understand the fabrication process, the optimization of photo-resist processing, ion implanted doping process, chemical etching process, silicon oxide growth on SiC material, stoichiometry silicon oxide with SiC material and comparative study of silicon oxide growth for silicon and carbon faces of SiC, nickel and indium tin oxide materials deposition for ohmic and Schottky contacts have been studied to optimize the unit steps of fabrication process. A detailed study on ion implantation, high-temperature annealing, and electrical device isolation has been performed. Different failure analyses for wafer and device level have been conducted to monitor the device performance, fabrication processing and material properties. I-V characteristics of fabricated SiC MESFET device has been measured by the curve tracer and compared with other fabricated GaN MESFE device.
Book Synopsis Silicon Carbide by : Peter Friedrichs
Download or read book Silicon Carbide written by Peter Friedrichs and published by John Wiley & Sons. This book was released on 2011-04-08 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.
Book Synopsis Advancing Silicon Carbide Electronics Technology II by : Konstantinos Zekentes
Download or read book Advancing Silicon Carbide Electronics Technology II written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2020-03-15 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices, (3) Doping by Ion Implantation, (4) Plasma Etching and (5) Fabrication of Silicon Carbide Nanostructures and Related Devices. The book is also suited as supplementary textbook for graduate courses. Keywords: Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS).
Book Synopsis Development of Pilot Production Capabilities for Silicon Carbide Power Devices and Integrated Circuits by :
Download or read book Development of Pilot Production Capabilities for Silicon Carbide Power Devices and Integrated Circuits written by and published by . This book was released on 2002 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The effort funded by this contract encompassed two principal objectives: First, the creation of a silicon carbide device prototyping capability at Mississippi State University by the creation of the first SiC fab line independent of commercial control. Secondly, the demonstration of a power Schottky barrier diode (SBD) prototyped in preproduction lot size. This final report documents the detailed description of the design, fabrication methodology, and testing results of the 15,000 SBD's fabricated and tested. The principle accomplishments of the funded effort are: The completion of a SiC foundry including fabrication services. Schottky barrier diodes were fabricated with reverse blocking characteristics averaging 500 volts, and with on-state forward voltage drops of
Book Synopsis Silicon Carbide by : Wolfgang J. Choyke
Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 911 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.
Book Synopsis Silicon Carbide, Volume 2 by : Peter Friedrichs
Download or read book Silicon Carbide, Volume 2 written by Peter Friedrichs and published by John Wiley & Sons. This book was released on 2011-04-08 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.
Book Synopsis Growth, Processing, and Characterization of Beta-silicon Carbide Single Crystals by :
Download or read book Growth, Processing, and Characterization of Beta-silicon Carbide Single Crystals written by and published by . This book was released on 1969 with total page 25 pages. Available in PDF, EPUB and Kindle. Book excerpt: Equipment and growth procedures for growing beta-silicon carbide epitaxially on beta-silicon carbide substrates from methyltrichlorosilane in a carrier gas of hydrogen is described. Hall and resistivity measurements and electron spin resonance measurements are discussed. The results show that the quality of the epitaxially grown material is comparable with that of the best solution grown crystals. Processing steps such as oxidation, masking, and etching have been performed and simple electroluminescent diodes have been fabricated. (Author).
Book Synopsis Silicon Carbide and Related Materials 2018 by : Peter M. Gammon
Download or read book Silicon Carbide and Related Materials 2018 written by Peter M. Gammon and published by Trans Tech Publications Ltd. This book was released on 2019-07-19 with total page 916 pages. Available in PDF, EPUB and Kindle. Book excerpt: 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK
Book Synopsis Sic Materials And Devices - Volume 1 by : Sergey Rumyantsev
Download or read book Sic Materials And Devices - Volume 1 written by Sergey Rumyantsev and published by World Scientific. This book was released on 2006-07-25 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
