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Epitaxial Ge Il V Heterostructures
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Book Synopsis Epitaxial Ge/Il-V Heterostructures by : Yu Bai (Ph.D.)
Download or read book Epitaxial Ge/Il-V Heterostructures written by Yu Bai (Ph.D.) and published by . This book was released on 2011 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial Ge thin films are being investigated for many important roles in next generation microelectronics. Metal-oxide-semiconductor field effect transistors (MOSFETs) utilizing Ge channels have demonstrated dramatic performance enhancements over Si based technology. Theoretical studies have predicted that tensile strain enhances both electron and hole mobilities of Ge to levels much greater than those in unstrained or compressively-strained Ge and Si. Additionally, high enough levels of tensile strain have been postulated to alter the band structure of Ge to make Ge a direct-band-gap semiconductor. We investigated the physics and fabrication of Ge/III-V compound heterostructures, where the III-V compound material could serve as a tensile-strain-inducing template for subsequent Ge epitaxy. Through experimentation and the use of characterization techniques such as transmission electron microscopy (TEM), photoluminescence (PL), secondary ion mass spectrometry (SIMS) and spreading resistance analysis (SRA), we established correlations between the initial III-V compound surface stoichiometry and the structural, optical, and electronic properties of Ge thin films deposited on GaAs and AlAs templates. We determined that the highest structural quality Ge epitaxy initiates via a bond and exchange mechanism with the surface group III element atoms, whereas group V element atoms do not bond as effectively with Ge and thin film deposition processes that rely on Ge-group V binding processes lead to 'pitting' in Ge thin films. With the developed understanding of the growth mechanisms, we successfully fabricated high quality tensile-strained Ge thin films and quantum dots on InxGaixAs templates. Tensile strain levels as high as 0.58% in Ge thin films and 1.37% in Ge quantum dots were achieved. However, the film deposition methods that facilitated the highest structural quality also led to unintentional doping characteristics that affected the electrical and optical properties of the tensile-strained Ge epitaxial structures. Nevertheless, we designed processing sequences that led to the first demonstration of room temperature, Ge direct band gap luminescence from Ge/III-V compound heterostructures. We parlayed our advancements in Ge/Ill-V compound heterostructure fabrication to demonstrate a novel process for the fabrication of GaAs-on-Insulator (GaAsOI). The combination of GaAs/Ge/GaAs heterostructure establishment, room temperature oxide-oxide bonding methods, and XeF2-based sacrificial etching of Ge, led to the successful fabrication of GaAsOI on a small scale. We tested the implementation of our process on a full wafer scale and determined the process was kinetically limited by the lateral Ge etch process. We adapted the Deal-Grove oxidation model to establish a model to understand the relationships between lateral etch rate, lateral etch distance, release layer thickness, channel displacements, and the radius of curvature of the donor wafer. Our Ge/III-V compound heterostructure research advanced the understanding and stateof- the-art processing of such structures. We established methods and elucidated challenges for future research targeted toward demonstrating novel Ge-based devices and advanced large-diameter engineered substrates.
Book Synopsis Heterostructure Epitaxy and Devices by : Josef Novák
Download or read book Heterostructure Epitaxy and Devices written by Josef Novák and published by Springer. This book was released on 1996-04-30 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heterostructure Epitaxy and Devices contains a selection of the papers contributed to the NATO Advanced Research Workshop of the same name, held near Bratislava in October 1995. Some of the leading research teams in the world present their latest findings, which are grouped under five headings: Epitaxial growth; Heterostructures; Composite systems; Characterization; and Devices.
Book Synopsis Epitaxial Heterostructures: Volume 198 by : Don W. Shaw
Download or read book Epitaxial Heterostructures: Volume 198 written by Don W. Shaw and published by Mrs Proceedings. This book was released on 1990-11-20 with total page 678 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Book Synopsis Heterostructure Epitaxy and Devices - HEAD’97 by : Peter Kordos
Download or read book Heterostructure Epitaxy and Devices - HEAD’97 written by Peter Kordos and published by Springer Science & Business Media. This book was released on 1998-03-31 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Workshop Heterostructure Epitaxy and Devices HEAD'97 was held from October 12 to 16, 1997 at Smolenice Castle, the House of Scientists of the Slovak Academy of Sciences and was co-organized by the Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and the Institute of Thin Film and Ion Technology, Research Centre, liilich. It was the third in a series of workshops devoted to topics related to heterostructure epitaxy and devices and the second included into the category of Advanced Research Workshops (ARW) under sponsorship of the NATO. More than 70 participants from 15 countries attended (Austria, Belarus, Belgium, Czech Republic, Finland, Germany, Greece, Hungary, Italy, Poland, Russia, Slovakia, Ukraine, the United Kingdom and the USA). Novel microelectronic and optoelectronic devices are based on semiconductor heterostructures. The goal of the ARW HEAD'97 was to discuss various questions related to the use of new materials (e.g. compound semiconductors based on high band-gap nitrides and low band-gap antimonides) and new procedures (low-temperature epitaxial growth), as well as new principles (nanostructures, quantum wires and dots, etc.) aimed at realizing high-performance heterostructure based electronic devices. Almost 70 papers (invited and contributed oral presentations as well as posters) were presented at the ARW HEAD'97 and the main part of them is included into these Proceedings.
Book Synopsis Stable and Epitaxial Metal/III-V Semiconductor Heterostructures by : Timothy D. Sands
Download or read book Stable and Epitaxial Metal/III-V Semiconductor Heterostructures written by Timothy D. Sands and published by . This book was released on 1990 with total page 70 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Liquid-Phase Epitaxial Growth of III-V Compound Semiconductor Materials and Their Device Applications, by : M. G. Astles
Download or read book Liquid-Phase Epitaxial Growth of III-V Compound Semiconductor Materials and Their Device Applications, written by M. G. Astles and published by CRC Press. This book was released on 1990 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: An introduction to the basic principles of the technique of liquid-phase epitaxy (LPE) as applied to the growth of the III-V family of compounds.
Book Synopsis Epitaxial Growth and Characterization of Si(1-x)Ge(x) Materials and Devices by : Pallab Bhattacharya
Download or read book Epitaxial Growth and Characterization of Si(1-x)Ge(x) Materials and Devices written by Pallab Bhattacharya and published by . This book was released on 1997 with total page 38 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objectives of this project were the understanding of heteroepitaxial growth of SiGe/Si, dislocation control for highly mismatched layers, and the application of such heterostructures to high speed microelectronics and optoelectronics. A new technique of dislocation control, using a low-temperature Si buffer layer, has been identified. SiGe/Si heterostructure FETs have been fabricated, using this technique. Heterostructure bipolar transistors have been utilized to realize the first SiGe-based integrated photoreceivers. The electro-optic coefficients in SiGe/Si quantum wells have also been measured. Modulators, whose operation principle is based on the small conduction band offset, in this heterostructure, has been demonstrated theoretically and experimentally, for the first time. Theoretical work, involving a charge control study of the interfacial effects in p-MOSFETs.
Book Synopsis Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials by : Peter Capper
Download or read book Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials written by Peter Capper and published by John Wiley & Sons. This book was released on 2007-08-20 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the field The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment Builds-on an established series known in the community Highly pertinent to current and future developments in telecommunications and computer-processing industries.
Book Synopsis Epitaxial Growth and Characterization of Multifunctional Heterostructures by : Swedesh Kumar Srivastava
Download or read book Epitaxial Growth and Characterization of Multifunctional Heterostructures written by Swedesh Kumar Srivastava and published by . This book was released on 2008 with total page 758 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization and Modeling of Epitaxial Intermetallics on III-V Semiconductor Heterostructures by : Gwan-chong Joo
Download or read book Characterization and Modeling of Epitaxial Intermetallics on III-V Semiconductor Heterostructures written by Gwan-chong Joo and published by . This book was released on 1992 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxial Growth of High-quality Sb-based III/V Semiconductor Heterostructures by : Christophe Charpentier
Download or read book Molecular Beam Epitaxial Growth of High-quality Sb-based III/V Semiconductor Heterostructures written by Christophe Charpentier and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis III-V Heterostructures for Electronic/Photonic Devices: Volume 145 by : C. W. Tu
Download or read book III-V Heterostructures for Electronic/Photonic Devices: Volume 145 written by C. W. Tu and published by . This book was released on 1989-11-15 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Book Synopsis Equilibrium and Dynamical Properties of Epitaxial Ferroelectric Heterostructures by : Yeongkwan Kim
Download or read book Equilibrium and Dynamical Properties of Epitaxial Ferroelectric Heterostructures written by Yeongkwan Kim and published by . This book was released on 1996 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Emerging Epitaxial Materials for Coherent III-V (opto)electronic Heterostructure Devices by : Kyle Marshall McNicholas
Download or read book Emerging Epitaxial Materials for Coherent III-V (opto)electronic Heterostructure Devices written by Kyle Marshall McNicholas and published by . This book was released on 2019 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The boundaries of semiconductor heterostructure device design are often defined by the epitaxial incompatibility of semiconductor materials. One avenue to expand these boundaries is the exploration of new materials that can be expitaxially incorporated with conventional semiconductors to enhance or extend device performance. Here we present our work on two emerging epitaxial materials, the highly-mismatch alloy system B [subscript x] Ga [subscript 1-x] As and quaternary alloys of the rare-earth pnictides. The boron pnictides (B-V) remain one of the least explored III-V materials systems, with many fundamental properties still awaiting experimental investigation. The small lattice constants of the B-V compounds result in greater than 3.4% tensile mismatch with conventional semiconductor substrates, offering unique opportunities for strain engineering in III-V heterostructures via mixed boron-III-V alloys. With sufficient boron concentrations, these materials can even be lattice-matched to Si, potentially providing a new avenue for monolithic integration of strain-free, direct-bandgap layers with silicon. The B concentrations reported in these alloys have thus far been restricted by solid solubility limits to dilute amounts. We demonstrate that a highly-kinetically limited growth regime enables near unity substitution boron incorporation outside the dilute limit, with measured boron concentrations greater than 2X those reported in the literature, large enough for the growth of coherent layers on Si. The optimized growth regime presented also facilitated the first characterization of these compounds outside the dilute regime, including composition dependent changes in the energy gap, dopant activation and transport, and prototype photodetector devices. The rare-earth pnictides (RE-V) are excellent candidates for the epitaxial integration of metallic layers in heterostructure devices. Many of these compounds are rock-salt structured semimetals that form abrupt and thermodynamically stable epitaxial interfaces with conventional III-V semiconductors. Furthermore, the potential to tailor the properties of these compounds to specific applications has been demonstrated through alloying, with broad tunability of the optical/electrical properties observed in alloys of LaLuAs. We present our efforts to extend these tunable metal layers to arbitrary substrates through the growth of quaternary RE-V alloys. We first demonstrate the epitaxial growth of GdAs, then use GdAs to demonstrate complete miscibility of the quaternary alloy LaGdLuAs while remaining lattice-matched to InP. Our observations indicate that the tunable properties observed in LaLuAs persist in these quaternary alloys. We also investigate the effects of growth conditions on the surface morphology of RE-V layers and demonstrate that under non-ideal conditions excess group-III elements can accumulate as nanostructures at the surface of these layers. We identified ideal growth conditions to mitigate the formation of these nanostructures
Book Synopsis Epitaxial Oxide Thin Films II: Volume 401 by : James S. Speck
Download or read book Epitaxial Oxide Thin Films II: Volume 401 written by James S. Speck and published by . This book was released on 1996-03-29 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: Our understanding and control of epitaxial oxide heterostructures has progressed along multiple frontiers including magnetic, dielectric, ferroelectric, and superconducting oxide materials. This has resulted in both independent rediscovery and the successful borrowing of ideas from ceramic science, solid-state physics, and semiconductor epitaxy. A new field of materials science has emerged which aims at the use of the intrinsic properties of various oxide materials in single-crystal thin-film form. Exploiting the potential of these materials, however, will only be possible if many fundamental and engineering questions can be answered. This book represents continued progress toward fulfilling that promise. Technical information on epitaxial oxide thin films from industry, academia and government laboratories is presented. Topics include: dielectrics; ferroelectrics; optics; superconductors; magnetics; magnetoresistance.
Book Synopsis Epitaxial Oxide Thin Films and Heterostructures by :
Download or read book Epitaxial Oxide Thin Films and Heterostructures written by and published by . This book was released on 1994 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Epitaxial Oxide Thin Films and Heterostructures by :
Download or read book Epitaxial Oxide Thin Films and Heterostructures written by and published by . This book was released on 1994 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt:
