Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Download Electron Transport And Device Modeling In The Group Iii Nitrides full books in PDF, epub, and Kindle. Read online Electron Transport And Device Modeling In The Group Iii Nitrides ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Author : Brian Edward Foutz
Publisher :
ISBN 13 :
Total Pages : 306 pages
Book Rating : 4.E/5 ( download)
Download or read book Electron Transport and Device Modeling in the Group-III Nitrides written by Brian Edward Foutz and published by . This book was released on 2000 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : John David Albrecht
Publisher :
ISBN 13 :
Total Pages : 508 pages
Book Rating : 4.:/5 (319 download)
Download or read book Device Modeling Based on Monte Carlo Simulation of Electron Transport in Group III-nitride Semiconductors written by John David Albrecht and published by . This book was released on 1999 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher : Academic Press
ISBN 13 : 0128175451
Total Pages : 546 pages
Book Rating : 4.1/5 (281 download)
Download or read book III-Nitride Electronic Devices written by and published by Academic Press. This book was released on 2019-10-18 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas – RF and power electronics Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies Written by a panel of academic and industry experts in each field
Author : M Razeghi
Publisher : Elsevier
ISBN 13 : 9780080444260
Total Pages : 602 pages
Book Rating : 4.4/5 (442 download)
Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Author : Tamara Brooke Fehlberg
Publisher :
ISBN 13 :
Total Pages : 232 pages
Book Rating : 4.:/5 (768 download)
Download or read book Transport Characterisation of Group III-nitride Materials with Dominating Surface Effects written by Tamara Brooke Fehlberg and published by . This book was released on 2009 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: [Truncated abstract] Group III-nitride (InN, GaN, AlN) electronics have many important and wide ranging applications, such as high power and high frequency transistors for satellite and mobile communications, solid-state lighting and high efficiency solar power. Performance increases and extension of the device operation regions will be obtained for many III-nitride devices through the incorporation of InN or In-rich InGaN/InAlN to improve transistor speed and move towards longer wavelengths in optical devices, while for high power GaNbased transistor devices, optimising existing passivation materials in transistor designs will enable further performance increases. InN is the least mature of the III-nitride materials. Transport modelling suggests roomtemperature electron mobilities of 12 000 cm2/Vs are possible in low carrier concentration material, however even the highest electron mobilities measured in InN to date are less than a third of that value. The progression towards device quality fims requires improvements in growth and understanding of the doping mechanisms, and this requires the accurate characterisation of the transport properties of the carriers in the material. In this work it is shown that for InN, Hall measurements performed over a range of magnetic fields, with a quantitative mobility spectrum analysis (QMSA), are required to distinguish between the multiple conduction paths that exist in all samples due to the presence of multiple carrier species, which include a native electron surface accumulation and a persistent, high, unintentional background (bulk) n-type doping. This technique greatly improves the accuracy of the characterisation of the bulk electron species, as this work shows that the surface electron species has a signifcant effect on the results obtained through the standard, single magnetic field, Hall characterisation technique. The high unintentional n-type doping is one of the major hurdles in the progression towards commercial InN-based devices. Furthermore, the electrical behaviour of the surface accumulation, and the dependence of such behaviour on surface conditions, is not well understood. In this work, the surface electron transport properties have been measured extensively, over a range of InN samples for a wide range of temperatures. The Hall bar geometry and magnetic fields up to 12 T were applied, in this work, for the first time in the multiple magnetic field Hall technique transport characterisation of MBE-grown InN, in order to improve the measurement resolution and extraction accuracy of the low mobility surface carrier properties. De-convolution of surface and bulk electronic properties were performed for a range of InN materials, providing correlation between temperature-dependent transport data and other growth parameter metrics and various surface conditions, such as crystal orientation (In- and N-face polarity), surface roughness and distance of the surface from the growth interface (thickness)...
Author : Ayse Erol
Publisher : Springer Science & Business Media
ISBN 13 : 3540745297
Total Pages : 607 pages
Book Rating : 4.5/5 (47 download)
Download or read book Dilute III-V Nitride Semiconductors and Material Systems written by Ayse Erol and published by Springer Science & Business Media. This book was released on 2008-01-12 with total page 607 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Author : Joachim Piprek
Publisher : John Wiley & Sons
ISBN 13 : 3527406670
Total Pages : 521 pages
Book Rating : 4.5/5 (274 download)
Download or read book Nitride Semiconductor Devices written by Joachim Piprek and published by John Wiley & Sons. This book was released on 2007-04-09 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium nitride and its related compounds enable the fabrication of highly efficient light-emitting diodes and lasers for a broad spectrum of wavelengths, ranging from red through yellow and green to blue and ultraviolet. Since the breakthrough demonstration of blue laser diodes by Shuji Nakamura in 1995, this field has experienced tremendous growth worldwide. Various applications can be seen in our everyday life, from green traffic lights to full-color outdoor displays to high-definition DVD players. In recent years, nitride device modeling and simulation has gained importance and advanced software tools are emerging. Similar developments occurred in the past with other semiconductors such as silicon, where computer simulation is now an integral part of device development and fabrication. This book presents a review of modern device concepts and models, written by leading researchers in the field. It is intended for scientists and device engineers who are interested in employing computer simulation for nitride device design and analysis.
Author : Joachim Piprek
Publisher : CRC Press
ISBN 13 : 149874947X
Total Pages : 835 pages
Book Rating : 4.4/5 (987 download)
Download or read book Handbook of Optoelectronic Device Modeling and Simulation written by Joachim Piprek and published by CRC Press. This book was released on 2017-10-10 with total page 835 pages. Available in PDF, EPUB and Kindle. Book excerpt: • Provides a comprehensive survey of fundamental concepts and methods for optoelectronic device modeling and simulation. • Gives a broad overview of concepts with concise explanations illustrated by real results. • Compares different levels of modeling, from simple analytical models to complex numerical models. • Discusses practical methods of model validation. • Includes an overview of numerical techniques.
Author : Ayse Erol
Publisher : Springer
ISBN 13 : 9783540842996
Total Pages : 592 pages
Book Rating : 4.8/5 (429 download)
Download or read book Dilute III-V Nitride Semiconductors and Material Systems written by Ayse Erol and published by Springer. This book was released on 2009-09-02 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Author : Edward T. Yu
Publisher : CRC Press
ISBN 13 : 1000715957
Total Pages : 715 pages
Book Rating : 4.0/5 (7 download)
Download or read book III-V Nitride Semiconductors written by Edward T. Yu and published by CRC Press. This book was released on 2022-10-30 with total page 715 pages. Available in PDF, EPUB and Kindle. Book excerpt: The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.
Author : Michael S. Shur
Publisher : World Scientific
ISBN 13 : 9814287873
Total Pages : 203 pages
Book Rating : 4.8/5 (142 download)
Download or read book Advanced High Speed Devices written by Michael S. Shur and published by World Scientific. This book was released on 2010 with total page 203 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced High Speed Devices covers five areas of advanced device technology: terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices. These emerging areas have attracted a lot of attention and the up-to-date results presented in the book will be of interest to most device and electronics engineers and scientists. The contributors range from prominent academics, such as Professor Lester Eastman, to key US Government scientists, such as Dr Michael Wraback. Sample Chapter(s). Chapter 1: Simulation and Experimental Results on Gan Based Ultra-Short Planar Negative Differential Conductivity Diodes for THZ Power Generation (563 KB). Contents: Simulation and Experimental Results on GaN Basee Ultra-Short Planar Negative Differential Conductivity Diodes for THz Power Generation (B Aslan et al.); Millimeter Wave to Terahertz in CMOS (K K O S Sankaran et al.); Surface Acoustic Wave Propagation in GaN-On-Sapphire Under Pulsed Sub-Band Ultraviolet Illumination (V S Chivukula et al.); The First 70nm 6-Inch GaAs PHEMT MMIC Process (H Karimy et al.); Performance of MOSFETs on Reactive-Ion-Etched GaN Surfaces (K Tang et al.); GaN Transistors for Power Switching and Millimeter-Wave Applications (T Ueda et al.); Bi-Directional Scalable Solid-State Circuit Breakers for Hybrid-Electric Vehicles (D P Urciuoli & V Veliadis); and other papers. Readership: Electronic engineers, solid state physicists, graduate students studying physics or electrical engineering.
Author : Safa Kasap
Publisher : Springer
ISBN 13 : 331948933X
Total Pages : 1536 pages
Book Rating : 4.3/5 (194 download)
Download or read book Springer Handbook of Electronic and Photonic Materials written by Safa Kasap and published by Springer. This book was released on 2017-10-04 with total page 1536 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second, updated edition of this essential reference book provides a wealth of detail on a wide range of electronic and photonic materials, starting from fundamentals and building up to advanced topics and applications. Its extensive coverage, with clear illustrations and applications, carefully selected chapter sequencing and logical flow, makes it very different from other electronic materials handbooks. It has been written by professionals in the field and instructors who teach the subject at a university or in corporate laboratories. The Springer Handbook of Electronic and Photonic Materials, second edition, includes practical applications used as examples, details of experimental techniques, useful tables that summarize equations, and, most importantly, properties of various materials, as well as an extensive glossary. Along with significant updates to the content and the references, the second edition includes a number of new chapters such as those covering novel materials and selected applications. This handbook is a valuable resource for graduate students, researchers and practicing professionals working in the area of electronic, optoelectronic and photonic materials.
Author : Hadis Morkoç
Publisher : Springer Science & Business Media
ISBN 13 : 9783540640387
Total Pages : 524 pages
Book Rating : 4.6/5 (43 download)
Download or read book Nitride Semiconductors and Devices written by Hadis Morkoç and published by Springer Science & Business Media. This book was released on 1999-09-28 with total page 524 pages. Available in PDF, EPUB and Kindle. Book excerpt: This timely monograph addresses an important class of semiconductors and devices that constitute the underlying technology for blue lasers. It succinctly treats structural, electrical and optical properties of nitrides and the substrates on which they are deposited, band structures of nitrides, optical processes, deposition and fabrication technologies, light-emitting diodes, and lasers. It also includes many tables and figures detailing the properties and performance of nitride semiconductors and devices.
Author : Maxim V Ryzhii
Publisher : World Scientific
ISBN 13 : 9814472344
Total Pages : 194 pages
Book Rating : 4.8/5 (144 download)
Download or read book Physics And Modeling Of Tera- And Nano-devices written by Maxim V Ryzhii and published by World Scientific. This book was released on 2008-04-28 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt: Physics and Modeling of Tera- and Nano-Devices is a compilation of papers by well-respected researchers working in the field of physics and modeling of novel electronic and optoelectronic devices. The topics covered include devices based on carbon nanotubes, generation and detection of terahertz radiation in semiconductor structures including terahertz plasma oscillations and instabilities, terahertz photomixing in semiconductor heterostructures, spin and microwave-induced phenomena in low-dimensional systems, and various computational aspects of device modeling. Researchers as well as graduate and postgraduate students working in this field will benefit from reading this book.
Author : Zhe Chuan Feng
Publisher : World Scientific
ISBN 13 : 1848162235
Total Pages : 477 pages
Book Rating : 4.8/5 (481 download)
Download or read book III-nitride Devices and Nanoengineering written by Zhe Chuan Feng and published by World Scientific. This book was released on 2008 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt: Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.
Author : Vassil Palankovski
Publisher : Springer Science & Business Media
ISBN 13 : 3709105609
Total Pages : 309 pages
Book Rating : 4.7/5 (91 download)
Download or read book Analysis and Simulation of Heterostructure Devices written by Vassil Palankovski and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
Author : Xiaodong Chen
Publisher :
ISBN 13 :
Total Pages : 306 pages
Book Rating : 4.E/5 ( download)
Download or read book Growth of III-nitrides by Molecular Beam Epitaxy for High Electron Mobility Transistors and Direct-write Patterning written by Xiaodong Chen and published by . This book was released on 2006 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt:
