Electron Statistics In Quantum Confined Superlattices

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Publisher : World Scientific
ISBN 13 : 9811263671
Total Pages : 790 pages
Book Rating : 4.8/5 (112 download)

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Book Synopsis Electron Statistics In Quantum Confined Superlattices by : Kamakhya Prasad Ghatak

Download or read book Electron Statistics In Quantum Confined Superlattices written by Kamakhya Prasad Ghatak and published by World Scientific. This book was released on 2023-03-14 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: The concepts of the Electron Statistics (ES) and the ES dependent electronic properties are basic pillars in semiconductor electronics and this first-of-its-kind book deals with the said concepts in doping superlattices (SLs), quantum well, quantum wire and quantum dot SLs, effective mass SLs, SLs with graded interfaces and Fibonacci SLs under different physical conditions respectively. The influences of intense radiation and strong electric fields under said concepts have been considered together with the heavily doped SLs in this context on the basis of newly formulated the electron energy spectra in all the cases. We have suggested experimental determinations of the Einstein relation for the Diffusivity-Mobility ratio, the Debye screening length, Elastic Constants and the content of this book finds 25 different applications in the arena of nanoscience and nanotechnology.This book contains hundred open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers. It is written for post graduate students of various departments of different academic organizations, engineers and professionals in the fields of solid state electronics, materials science, solid state sciences, nano-science, nanotechnology and nano materials in general.

Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures

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Author :
Publisher : Springer Nature
ISBN 13 : 9811698449
Total Pages : 253 pages
Book Rating : 4.8/5 (116 download)

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Book Synopsis Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures by : Kamakhya Prasad Ghatak

Download or read book Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures written by Kamakhya Prasad Ghatak and published by Springer Nature. This book was released on 2022-03-25 with total page 253 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book highlights the importance of Electron Statistics (ES), which occupies a singular position in the arena of solid state sciences, in heavily doped (HD) nanostructures by applying Heisenberg’s Uncertainty Principle directly without using the complicated Density-of-States function approach as given in the literature. The materials considered are HD quantum confined nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge, PtSb2, stressed materials, GaSb, Te, II-V, Bi2Te3, lead germanium telluride, zinc and cadmium diphosphides, and quantum confined III-V, IV-VI, II-VI and HgTe/CdTe super-lattices with graded interfaces and effective mass super-lattices. The presence of intense light waves in optoelectronics and strong electric field in nano-devices change the band structure of materials in fundamental ways, which have also been incorporated in the study of ES in HD quantized structures of optoelectronic compounds that control the studies of the HD quantum effect devices under strong fields. The influence of magnetic quantization, magneto size quantization, quantum wells, wires and dots, crossed electric and quantizing fields, intense electric field, and light waves on the ES in HD quantized structures and superlattices are discussed. The content of this book finds six different applications in the arena of nano-science and nanotechnology and the various ES dependent electronic quantities, namely the effective mass, the screening length, the Einstein relation and the elastic constants have been investigated. This book is useful for researchers, engineers and professionals in the fields of Applied Sciences, solid state and materials science, nano-science and technology, condensed matter physics, and allied fields, including courses in semiconductor nanostructures. ​

Heisenberg's Uncertainty Principle and the Electron Statistics in Quantized Structures

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Publisher :
ISBN 13 : 9789811698453
Total Pages : 0 pages
Book Rating : 4.6/5 (984 download)

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Book Synopsis Heisenberg's Uncertainty Principle and the Electron Statistics in Quantized Structures by : Kamakhya Prasad Ghatak

Download or read book Heisenberg's Uncertainty Principle and the Electron Statistics in Quantized Structures written by Kamakhya Prasad Ghatak and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book highlights the importance of Electron Statistics (ES), which occupies a singular position in the arena of solid state sciences, in heavily doped (HD) nanostructures by applying Heisenberg's Uncertainty Principle directly without using the complicated Density-of-States function approach as given in the literature. The materials considered are HD quantum confined nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge, PtSb2, stressed materials, GaSb, Te, II-V, Bi2Te3, lead germanium telluride, zinc and cadmium diphosphides, and quantum confined III-V, IV-VI, II-VI and HgTe/CdTe super-lattices with graded interfaces and effective mass super-lattices. The presence of intense light waves in optoelectronics and strong electric field in nano-devices change the band structure of materials in fundamental ways, which have also been incorporated in the study of ES in HD quantized structures of optoelectronic compounds that control the studies of the HD quantum effect devices under strong fields. The influence of magnetic quantization, magneto size quantization, quantum wells, wires and dots, crossed electric and quantizing fields, intense electric field, and light waves on the ES in HD quantized structures and superlattices are discussed. The content of this book finds six different applications in the arena of nano-science and nanotechnology and the various ES dependent electronic quantities, namely the effective mass, the screening length, the Einstein relation and the elastic constants have been investigated. This book is useful for researchers, engineers and professionals in the fields of Applied Sciences, solid state and materials science, nano-science and technology, condensed matter physics, and allied fields, including courses in semiconductor nanostructures.

Quantum Capacitance In Quantized Transistors

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Author :
Publisher : World Scientific
ISBN 13 : 9811279411
Total Pages : 886 pages
Book Rating : 4.8/5 (112 download)

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Book Synopsis Quantum Capacitance In Quantized Transistors by : Kamakhya Prasad Ghatak

Download or read book Quantum Capacitance In Quantized Transistors written by Kamakhya Prasad Ghatak and published by World Scientific. This book was released on 2024-02-06 with total page 886 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, there has been considerable interest in studying the quantum capacitance (QC) in 2D quantum MOSFETs (QMOSFET) and 1D Nano Wire FET (NWFET) devices of various technologically important materials which find extensive applications in many directions in low dimensional electronics. The 2D and 1D electron statistics in inversion layers of MOSFETs can rather easily be varied by changing the gate voltage which, in turn, brings a change of the surface electric field, the QC depends on the gate-voltage. This first-of-its-kind book deals solely with the QC in 2D MOSFETs of non-linear optical, ternary, quaternary, III-V compounds, II-VI, IV-VI, stressed Kane type, Ge, GaP, Bismuth telluride, Gallium Antimonide and their 1D NWFETs counter parts. The influence of quantizing magnetic field, crossed electric and magnetic fields, parallel magnetic field, have also been considered on the QC of the said devices of the aforementioned materials. The influences of strong light waves and ultra-strong electric field present in nano-devices have also been considered. The accumulation layers of the quantum effect devices of the said materials have also been discussed in detail by formulating the respective dispersion relations of the heavily doped compounds. The QC in 1D MOSFET of the said materials have also been investigated in this context on the basis of newly formulated electron energy spectra in all the cases. The QC in quantum well transistors and magneto quantum well transistors together with CNTFETs have been formulated and discussed in detail along with I-V equations of ballistic QWFETs and NWFETs together with their heavily doped counter parts under different external physical conditions. In this context, experimental determinations are suggested of the Einstein relation for the Diffusivity-Mobility ratio, the Debye screening length, Elastic Constants and the content of this book finds twenty-two different applications in the arena of nanoscience and nanotechnology.This book contains hundred open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers.

Elastic Constants In Heavily Doped Low Dimensional Materials

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Author :
Publisher : World Scientific
ISBN 13 : 9811229481
Total Pages : 1036 pages
Book Rating : 4.8/5 (112 download)

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Book Synopsis Elastic Constants In Heavily Doped Low Dimensional Materials by : Kamakhya Prasad Ghatak

Download or read book Elastic Constants In Heavily Doped Low Dimensional Materials written by Kamakhya Prasad Ghatak and published by World Scientific. This book was released on 2021-03-15 with total page 1036 pages. Available in PDF, EPUB and Kindle. Book excerpt: The elastic constant (EC) is a very important mechanical property of the these materials and its significance is already well known in literature. This first monograph solely deals with the quantum effects in EC of heavily doped (HD) low dimensional materials. The materials considered are HD quantum confined nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge, PtSb₂, stressed materials, GaSb, Te, II-V, Bi₂Te₃, lead germanium telluride, zinc and cadmium diphosphides, and quantum confined III-V, II-VI, IV-VI, and HgTe/CdTe super-lattices with graded interfaces and effective mass super-lattices. The presence of intense light waves in optoelectronics and strong electric field in nano-devices changes the band structure of semiconductors in fundamental ways, which have also been incorporated in the study of EC in HD low dimensional optoelectronic compounds that control the studies of the HD quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under intense external fields has also been discussed in this context. The influences of magnetic quantization, crossed electric and quantizing fields, electric field and light waves on the EC in HD semiconductors and super-lattices are discussed.The content of this book finds twenty-five different applications in the arena of nano-science and nano-technology. We The authors have discussed the experimental methods of determining the Einstein Relation, screening length and EC in this context. This book contains circa 200 open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers in the fields of condensed matter physics, materials science, solid state sciences, nano-science and technology and allied fields in addition to the graduate courses in semiconductor nanostructures.

Physics and Applications of Quantum Wells and Superlattices

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 1468454781
Total Pages : 456 pages
Book Rating : 4.4/5 (684 download)

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Book Synopsis Physics and Applications of Quantum Wells and Superlattices by : E.E. Mendez

Download or read book Physics and Applications of Quantum Wells and Superlattices written by E.E. Mendez and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the lectures delivered at the NATO Advanced Study Institute on "Physics and Applications of Quantum Wells and Superlattices", held in Erice, Italy, on April 21-May 1, 1987. This course was the fourth one of the International School of Solid-State Device Research, which is under the auspices of the Ettore Majorana Center for Scientific Culture. In the last ten years, we have seen an enormous increase in re search in the field of Semiconductor Heterostructures, as evidenced by the large percentage of papers presented in recent international conferences on semiconductor physics. Undoubtfully, this expansion has been made possible by dramatic advances in materials preparation, mostly by molecular beam epitaxy and organometallic chemical vapor deposition. The emphasis on epitaxial growth that was prevalent at the beginning of the decade (thus, the second course of the School, held in 1983, was devoted to Molecular Beam Epitaxy and Heterostructures) has given way to a strong interest in new physical phenomena and new material structures, and to practical applications that are already emerging from them.

Quantum Effects, Heavy Doping, And The Effective Mass

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Author :
Publisher : World Scientific
ISBN 13 : 9813146532
Total Pages : 755 pages
Book Rating : 4.8/5 (131 download)

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Book Synopsis Quantum Effects, Heavy Doping, And The Effective Mass by : Kamakhya Prasad Ghatak

Download or read book Quantum Effects, Heavy Doping, And The Effective Mass written by Kamakhya Prasad Ghatak and published by World Scientific. This book was released on 2016-12-08 with total page 755 pages. Available in PDF, EPUB and Kindle. Book excerpt: The importance of the effective mass (EM) is already well known since the inception of solid-state physics and this first-of-its-kind monograph solely deals with the quantum effects in EM of heavily doped (HD) nanostructures. The materials considered are HD quantum confined nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge, PtSb2, stressed materials, GaSb, Te, II-V, Bi2Te3, lead germanium telluride, zinc and cadmium diphosphides, and quantum confined III-V, II-VI, IV-VI, and HgTe/CdTe super-lattices with graded interfaces and effective mass super-lattices. The presence of intense light waves in optoelectronics and strong electric field in nano-devices change the band structure of semiconductors in fundamental ways, which have also been incorporated in the study of EM in HD quantized structures of optoelectronic compounds that control the studies of the HD quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under intense external fields has also been discussed in this context. The influences of magnetic quantization, crossed electric and quantizing fields, electric field and light waves on the EM in HD semiconductors and super-lattices are discussed.The content of this book finds twenty-eight different applications in the arena of nano-science and nano-technology. This book contains 200 open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers in the fields of condensed matter physics, materials science, solid state sciences, nano-science and technology and allied fields in addition to the graduate courses in semiconductor nanostructures. The book is written for post-graduate students, researchers, engineers and professionals in the fields of condensed matter physics, solid state sciences, materials science, nanoscience and technology and nanostructured materials in general.

Magneto Thermoelectric Power in Heavily Doped Quantized Structures

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Publisher : World Scientific
ISBN 13 : 9814713201
Total Pages : 827 pages
Book Rating : 4.8/5 (147 download)

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Book Synopsis Magneto Thermoelectric Power in Heavily Doped Quantized Structures by : Kamakhya Prasad Ghatak

Download or read book Magneto Thermoelectric Power in Heavily Doped Quantized Structures written by Kamakhya Prasad Ghatak and published by World Scientific. This book was released on 2016 with total page 827 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This pioneering monograph solely deals with the Magneto Thermoelectric Power (MTP) in Heavily Doped (HD) Quantized Structures. The materials considered range from HD quantum confined nonlinear optical materials to HgTe/CdTe HD superlattices with graded interfaces and HD effective mass superlattices under magnetic quantization. An important concept of the measurement of the band gap in HD optoelectronic materials in the presence of external photo-excitation has been discussed in this perspective. The influences of magnetic quantization, crossed electric and quantizing fields, the intense electric field on the TPM in HD semiconductors and superlattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers in the various fields for which this particular series is dedicated"--

Einstein's Photoemission

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Publisher : Springer
ISBN 13 : 3319111884
Total Pages : 523 pages
Book Rating : 4.3/5 (191 download)

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Book Synopsis Einstein's Photoemission by : Kamakhya Prasad Ghatak

Download or read book Einstein's Photoemission written by Kamakhya Prasad Ghatak and published by Springer. This book was released on 2014-11-19 with total page 523 pages. Available in PDF, EPUB and Kindle. Book excerpt: This monograph solely investigates the Einstein's Photoemission(EP) from Heavily Doped(HD) Quantized Structures on the basis of newly formulated electron dispersion laws. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The EP in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields that control the studies of such quantum effect devices. The suggestions for the experimental determinations of different important physical quantities in HD 2D and 3D materials and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring physical properties in the presence of intense light waves which alter the electron energy spectra) have also been discussed in this context. The influence quantizing magnetic field, on the EP of the different HD quantized structures (quantum wells, quantum well HD superlattices and nipi structures) under different physical conditions has been investigated. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of materials science, condensed matter physics, solid-state sciences, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures offered in different Universities and Institutes.

Nanomaterials

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Publisher : Walter de Gruyter GmbH & Co KG
ISBN 13 : 3110661195
Total Pages : 491 pages
Book Rating : 4.1/5 (16 download)

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Book Synopsis Nanomaterials by : Engg Kamakhya Prasad Ghatak

Download or read book Nanomaterials written by Engg Kamakhya Prasad Ghatak and published by Walter de Gruyter GmbH & Co KG. This book was released on 2020-04-06 with total page 491 pages. Available in PDF, EPUB and Kindle. Book excerpt: This monograph investigates the entropy in heavily doped (HD) quantized structures by analyzing under the influence of magnetic quantization, crossed electric and quantizing fields the range from HD quantum confined nonlinear optical materials to HgTe/CdTe HD superlattices with graded interfaces. Finally the authors address various challenges in today’s research of optoelectronic materials and give an outlook to future studies.

Fowler-Nordheim Field Emission

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Publisher : Springer Science & Business Media
ISBN 13 : 3642204937
Total Pages : 353 pages
Book Rating : 4.6/5 (422 download)

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Book Synopsis Fowler-Nordheim Field Emission by : Sitangshu Bhattacharya

Download or read book Fowler-Nordheim Field Emission written by Sitangshu Bhattacharya and published by Springer Science & Business Media. This book was released on 2012-01-13 with total page 353 pages. Available in PDF, EPUB and Kindle. Book excerpt: This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization and quantum wires of the aforementioned superlattices. The FNFE in opto-electronic materials and their quantum confined counterparts is studied in the presence of light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The importance of band gap measurements in opto-electronic materials in the presence of external fields is discussed from this perspective. This monograph contains 200 open research problems which form the very core and are useful for Ph. D students and researchers. The book can also serve as a basis for a graduate course on field emission from solids.

Effective Electron Mass in Low-Dimensional Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 3642312470
Total Pages : 549 pages
Book Rating : 4.6/5 (423 download)

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Book Synopsis Effective Electron Mass in Low-Dimensional Semiconductors by : Sitangshu Bhattacharya

Download or read book Effective Electron Mass in Low-Dimensional Semiconductors written by Sitangshu Bhattacharya and published by Springer Science & Business Media. This book was released on 2012-10-06 with total page 549 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in the study of the EEM in quantized structures of optoelectronic compounds that control the studies of the quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under strong electric field and external photo excitation has also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped semiconductors and their nanostructures is discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both Ph. D aspirants and researchers in the fields of solid-state sciences, materials science, nanoscience and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures. The book is written for post graduate students, researchers and engineers, professionals in the fields of solid state sciences, materials science, nanoscience and technology, nanostructured materials and condensed matter physics.

Thermoelectric Power in Nanostructured Materials

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Publisher : Springer Science & Business Media
ISBN 13 : 3642105718
Total Pages : 411 pages
Book Rating : 4.6/5 (421 download)

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Book Synopsis Thermoelectric Power in Nanostructured Materials by : Kamakhya Prasad Ghatak

Download or read book Thermoelectric Power in Nanostructured Materials written by Kamakhya Prasad Ghatak and published by Springer Science & Business Media. This book was released on 2010-07-20 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first monograph which solely investigates the thermoelectric power in nanostrcutured materials under strong magnetic field (TPSM) in quantum confined nonlinear optical, III-V, II-VI, n-GaP, n-Ge, Te, Graphite, PtSb2, zerogap, II-V, Gallium Antimonide, stressed materials, Bismuth, IV-VI, lead germanium telluride, Zinc and Cadmium diphosphides, Bi2Te3, Antimony and carbon nanotubes, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization, the quantum wires and dots of the aforementiond superlattices by formulating the approprate respective carrier energy spectra which in turn control the quantum processes in quantum effect devices. The TPSM in macro, quantum wire and quantum dot superlattices of optoelectronic materials in the presence of external photo-excitation have also been studied on the basis of newly formulated electron dispersion laws. This monograph contains 150 open research problems which form the very core and are useful for PhD students and researchers in the fields of materials science, solid-state sciences, computational and theoretical nanoscience and technology, nanostructured thermodynamics and condensed matter physics in general in addition to the graduate courses on modern thermoelectric materials in various academic departments of many institutes and universities.

Dispersion Relations in Heavily-Doped Nanostructures

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Publisher : Springer
ISBN 13 : 3319210009
Total Pages : 664 pages
Book Rating : 4.3/5 (192 download)

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Book Synopsis Dispersion Relations in Heavily-Doped Nanostructures by : Kamakhya Prasad Ghatak

Download or read book Dispersion Relations in Heavily-Doped Nanostructures written by Kamakhya Prasad Ghatak and published by Springer. This book was released on 2015-10-26 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.

Heavily-Doped 2D-Quantized Structures and the Einstein Relation

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Author :
Publisher : Springer
ISBN 13 : 3319083805
Total Pages : 381 pages
Book Rating : 4.3/5 (19 download)

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Book Synopsis Heavily-Doped 2D-Quantized Structures and the Einstein Relation by : Kamakhya P. Ghatak

Download or read book Heavily-Doped 2D-Quantized Structures and the Einstein Relation written by Kamakhya P. Ghatak and published by Springer. This book was released on 2014-07-30 with total page 381 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped (HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing magnetic fields on the ER of the different 2D HD quantized structures (quantum wells, inversion and accumulation layers, quantum well HD superlattices and nipi structures) under different physical conditions is discussed in detail. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of condensed matter physics, solid-state sciences, materials science, nano-science and technology and allied fields.

Interfaces, Quantum Wells, and Superlattices

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 1461310458
Total Pages : 402 pages
Book Rating : 4.4/5 (613 download)

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Book Synopsis Interfaces, Quantum Wells, and Superlattices by : C. Richard Leavens

Download or read book Interfaces, Quantum Wells, and Superlattices written by C. Richard Leavens and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: The NATO Advanced Study Institute on "Interfaces, Quantum Wells and Superlattices" was held from August 16th to 29th, 1987, in Banff, Alberta, Canada. This volume contains most of the lectures that were given at the Institute. A few of the lectures had already been presented at an earlier meeting and appear instead in the proceedings of the NATO Advanced Study Institute on "Physics and Applications of Quantum Wells and Super lattices" held in Erice from April 21st to May 1st earlier in the year and published by Plenum Press. The study of semiconductor interfaces, quantum wells and super lattices has come to represent a substantial proportion of all work in condensed matter physics. In a sense the growth of interest in this area, which began to accelerate about 10 years ago and seems to be continuing, has been driven by technological developments. While the older generation of semiconductor devices was based on adjacent semiconductors with different properties (e. g. different doping levels) separated by interfaces, modern semiconductor devices tend to be based more and more on properties of the interfaces themselves. This has led, as an example, to the field of band-structure engineering. Improved understanding of the fundamental physics of these systems has aided technological developments and, in turn, technological developments have made available systems which exhibit novel and fascinating phYSical properties, such as the integer and fractional quantum Hall effects.

Properties of III-V Quantum Wells and Superlattices

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Author :
Publisher : Institution of Electrical Engineers
ISBN 13 :
Total Pages : 432 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Properties of III-V Quantum Wells and Superlattices by : P. K. Bhattacharya

Download or read book Properties of III-V Quantum Wells and Superlattices written by P. K. Bhattacharya and published by Institution of Electrical Engineers. This book was released on 1996 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: A finely-structured, state-of-the-art review on controlled building of atomic-scale mutilayers, where nanometric structures based on III-V semiconductors have attracted particular attention.