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Electron Beam Processing Of Gallium Arsenide
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Book Synopsis Electron Beam Processing of Gallium Arsenide by : N. J. Shah
Download or read book Electron Beam Processing of Gallium Arsenide written by N. J. Shah and published by . This book was released on 1983 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scanned Electron Beam Processing of Gallium Arsenide Device Structures by : Zdzislaw Meglicki
Download or read book Scanned Electron Beam Processing of Gallium Arsenide Device Structures written by Zdzislaw Meglicki and published by . This book was released on 1988 with total page 512 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Laser and Electron Beam Processing of Silicon and Gallium Arsenide by :
Download or read book Laser and Electron Beam Processing of Silicon and Gallium Arsenide written by and published by . This book was released on 1979 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Laser (photon) and electron beams provide a controlled source of heat by which surface layers of silicon and gallium arsenide can be rapidly melted and cooled with rates exceeding 10/sup 80/C/sec. The melting process has been used to remove displacement damage in ion implanted Si and GaAs, to remove dislocations, loops and precipitates in silicon and to study impurity segregation and solubility limits. The mechanisms associated with various phenomena will be examined. The possible impact of laser and electron beam processing on device technology, particularly with respect to solar cells is discussed.
Book Synopsis Laser and Electron Beam Processing of Materials by : C.W. White
Download or read book Laser and Electron Beam Processing of Materials written by C.W. White and published by Elsevier. This book was released on 2012-12-02 with total page 788 pages. Available in PDF, EPUB and Kindle. Book excerpt: Laser and Electron Beam Processing of Materials contains the papers presented at the symposium on "Laser and Electron Beam Processing of Materials," held in Cambridge, Massachusetts, in November 1979, sponsored by the Materials Research Society. The compilation presents reports and research papers on the use of directed energy sources, such as lasers and electron beams for materials processing. The majority of the materials presented emphasize results on semiconductor materials research. Substantial findings on research on metals, alloys, and other materials are presented as well. Topics covered by the papers include the use of scanned cw sources (both photons and electrons) to recrystallize amorphous layers, enhanced substitutional solubility, solute trapping, zone refining of impurities, and constitutional supercooling. The use of lasers and electron beams to anneal ion implant damage and contacts formation, processing of ion-implanted metals, and surface alloying of films deposited on metallic surfaces are also discussed. Metallurgists, engineers, and materials scientists will find the book very insightful.
Book Synopsis Gallium Arsenide Advanced Crystal Growth and Beam Processing by : C. L. Anderson
Download or read book Gallium Arsenide Advanced Crystal Growth and Beam Processing written by C. L. Anderson and published by . This book was released on 1980 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report describes the progress made during a fifteen-month program to study the feasibility of growth of high-purity epitaxial quality bulk GaAs crystals from solution and annealing of implanted layers and Ohmic contacts for device applications using laser and electron beams. Millimeter-thick crystals have been grown by the low-temperature solution-growth process. Room-temperature n-type carrier concentrations of 2 times 10 to the 15th power/cu.cm. and liquid nitrogen mobilities of 30,000 sq. cm/V/sec have been achieved. Theoretical studies of a variety of potential growth configurations were performed. A detailed study of the laser of annealing implanted layers and Ohmic contacts was performed using several Q-switched and cw lasers. State-of-the-art results were achieved in both the implant-annealing and Ohmic-contact areas. Preliminary investigations of the annealing of implanted layers and Ohmic contacts using pulsed electron beams were also performed. (Author).
Book Synopsis GaAs High-Speed Devices by : C. Y. Chang
Download or read book GaAs High-Speed Devices written by C. Y. Chang and published by John Wiley & Sons. This book was released on 1994-10-28 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.
Book Synopsis Preparation of Silicon Substrates for Gallium Arsenide Solar Cells by Electron Beam Pulse Processing by : Stephen P. Tobin
Download or read book Preparation of Silicon Substrates for Gallium Arsenide Solar Cells by Electron Beam Pulse Processing written by Stephen P. Tobin and published by . This book was released on 1981 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past year we have developed a process for creating high-quality epitaxial layers of germanium on silicon substrates using rapid heating and cooling with a pulsed electron beam. This single-crystal germanium coating is the key to the production of high efficiency Ga-As solar cells on low-cost silicon substrates in an economical manner.
Book Synopsis Ga Positive Focused Ion Beam Processing of Gallium Arsenide and Silicon by : Wei Chen
Download or read book Ga Positive Focused Ion Beam Processing of Gallium Arsenide and Silicon written by Wei Chen and published by . This book was released on 1994 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electron Beam Interactions with Gallium Arsenide Field Effect Transistors by : Raymond Frank Haythonsthwaite
Download or read book Electron Beam Interactions with Gallium Arsenide Field Effect Transistors written by Raymond Frank Haythonsthwaite and published by . This book was released on 1980 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Modern GaAs Processing Methods by : Ralph Williams
Download or read book Modern GaAs Processing Methods written by Ralph Williams and published by Artech House Microwave Library. This book was released on 1990 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing updated material from the first edition, this book adds several chapters covering RF testing techniques, reliability, process and manufacturing disciplines and process development (experiment by design).
Book Synopsis Fabrication of Aluminum Gallium Arsenide by : Melih Özaydin
Download or read book Fabrication of Aluminum Gallium Arsenide written by Melih Özaydin and published by . This book was released on 1991 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Preparation and Characterization of Electron-beam Deposited Gallium Phosphate Films on Gallium Arsenide by : Chien-Sheng Su
Download or read book The Preparation and Characterization of Electron-beam Deposited Gallium Phosphate Films on Gallium Arsenide written by Chien-Sheng Su and published by . This book was released on 1982 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Arsenide and Related Compounds 1992, Proceedings of the 19th INT Symposium, 28 September-2 October 1992, Karuizawa, Japan by : Ikegami
Download or read book Gallium Arsenide and Related Compounds 1992, Proceedings of the 19th INT Symposium, 28 September-2 October 1992, Karuizawa, Japan written by Ikegami and published by CRC Press. This book was released on 1993-01-01 with total page 1002 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bringing together international experts from 16 countries, Gallium Arsenide and Related Compounds 1992 focuses on device applications for Gallium Arsenide and related compounds. A topic of importance discussed is the first GaAs supercomputer from Fujitsu. The book also explores carbon doping and device applications in laser diodes, light modulators, and amplifiers, emphasizing business opportunity in consumer applications such as personal communications and TV tuners. It includes an account of the use of scanning tunneling microscopies in GaAs and related compounds. This book is ideal for physicists, materials scientists, and electronics and electrical engineers involved in III-V compound research.
Book Synopsis Properties of Gallium Arsenide by : M. R. Brozel
Download or read book Properties of Gallium Arsenide written by M. R. Brozel and published by Inst of Engineering & Technology. This book was released on 1996 with total page 981 pages. Available in PDF, EPUB and Kindle. Book excerpt: It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.
Book Synopsis Swept Line Electron Beam Annealing of Beryllium-implanted Gallium Arsenide by : Sanjay Kumar Banerjee
Download or read book Swept Line Electron Beam Annealing of Beryllium-implanted Gallium Arsenide written by Sanjay Kumar Banerjee and published by . This book was released on 1981 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Transmission Electron Microscopy Investigation of Ion Implantation Damage in Gallium Arsenide and Other Semiconductors by : Michael Wayne Bench
Download or read book Transmission Electron Microscopy Investigation of Ion Implantation Damage in Gallium Arsenide and Other Semiconductors written by Michael Wayne Bench and published by . This book was released on 1992 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The crystalline-to-amorphous transition induced by ion implantation was investigated in GaAs and GaP using transmission electron microscopy. The experiments included those performed in situ using the HVEM-Tandem Accelerator Facility at Argonne National Laboratory and also those performed using high-resolution TEM. The implantations were made with Ar$sp+$, Kr$sp+$, Xe$sp+$, and Au$sp+$ ions (energy 50 or 80 keV) at 30 and 300 K. The high-resolution experiments confirmed the amorphous nature of the damage produced in individual displacement cascades. The in situ experiments at 30 K showed that amorphous zones are produced within isolated cascades with high probability. It was found that the efficiency of production of amorphous damage increases with increasing ion mass. The probability that an individual cascade will generate an amorphous region decreases when the implantation is performed at room temperature in GaAs but remains the same for GaP. Annealing experiments in the 30-300 K range demonstrated that there is significant damage recovery below 300 K in GaAs but none in GaP. Calculations of the energy density deposited in the cascades, determined through Monte-Carlo simulations, suggest that the formation and subsequent quenching of a molten zone may be responsible for the production of the amorphous damage. In addition to the experiments on damage production, electron beam induced recrystallization of isolated amorphous zones was investigated in GaAs, GaP, Si, and Ge. Regrowth was induced in all materials at electron energies below the threshold displacement energy. However, a minimum energy threshold was found only in Si. Results in the other three materials, particularly Ge, suggest that beam-induced ionization may be playing a role in the solid-phase epitaxial regrowth process in each of those materials.
Book Synopsis Fabrication of GaAs Devices by : Albert G. Baca
Download or read book Fabrication of GaAs Devices written by Albert G. Baca and published by IET. This book was released on 2005-09 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.