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Electrical Optical And Defect Properties Of Carbon Doped Gallium Nitride Grown By Molecular Beam Epitaxy
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Book Synopsis Electrical, Optical, and Defect Properties of Carbon-doped Gallium Nitride Grown by Molecular-beam Epitaxy by : Robert David Armitage
Download or read book Electrical, Optical, and Defect Properties of Carbon-doped Gallium Nitride Grown by Molecular-beam Epitaxy written by Robert David Armitage and published by . This book was released on 2003 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Characterization of Gallium Nitride Electroluminescent Devices Co-doped with Rare Earth and Silicon by : Wang Rui
Download or read book Fabrication and Characterization of Gallium Nitride Electroluminescent Devices Co-doped with Rare Earth and Silicon written by Wang Rui and published by . This book was released on 2009 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rare Earth (RE) doped III-nitrides are being widely investigated for potential applications in optical communication and displays, due to the wide and direct energy bandgap of GaN resulting in low thermal quenching of RE ion sharp emission from ultraviolet (UV) through visible to infrared (IR) region. The UC Nanolab has been conducting RE doped GaN research for more than 10 years and many achievements were obtained, ranging from material growth to device fabrication. This dissertation studied RE emission in GaN material, focusing on the effects of electronic impurity (Si) co-doping on RE luminescence. Advanced RE doped GaN electroluminescent devices (ELDs) were also designed and fabricated. Detailed device characterization was carried out and the effect of co-dopant was investigated. Eu-doped GaN thin films were grown on sapphire wafers by molecular beam epitaxy (MBE) technique and the growth conditions were optimized for the strongest Eu luminescence. It was found that GaN thin film quality and Eu doping concentration mutually affected Eu luminescence. High quality GaN:Eu thin films were grown under Ga rich condition (III/V>1), but the strongest Eu luminescence was obtained under slightly N rich condition (III/V1). The optimum Eu doping concentration is ~0.1-1.0at.%, depending on the GaN:Eu thin film quality. Higher growth temperature (750°C) was also found to enhance Eu luminescence intensity (~10x) and efficiency (~30x). The effect of Si co-doping in GaN:RE thin films was investigated. Eu photoluminescence (PL) was enhanced ~5-10x by moderate Si co-doping (~0.05at.%) mostly due to the increase of Eu PL lifetime, but decreased very fast at high Si co-doping concentration (>0.08at.%). The increase of Eu PL lifetime is possibly due to the incorporation of Si uniformly distributing Eu ions and shielding Eu-Eu interactions. Combined with the increase in excitation cross section and carrier flux, there is a significant enhancement on Eu PL intensity. The electrical properties of GaN:RE thin films were changed from high resistive to weakly n-type due to increased electron concentration introduced by Si co-doping. GaN:RE ELDs were fabricated and the electrical and optical properties were studied by I-V and electroluminescence (EL) measurements. A hetero-junction PIN structure was designed on n-GaN:Si/GaN:RE/p-Si, employing p-Si substrates as p-type conductive layer. RE ions EL emission was found to be much stronger under forward bias than under reverse bias. The Si co-doping was also studied in GaN:RE ELDs. It was found that Er EL had strong visible & IR emission under forward bias, while there is little or no emission under reverse bias. A pn hetero-junction structure formed between p-Si and n-GaN:(Si, Er) layers was proposed to be responsible for the emission control. GaN:(Si, Eu) AC thin film ELDs were also fabricated and shown that the Si co-doping increased the Eu ions emission intensity and efficiency.
Book Synopsis Deep Level Defects in Electron-irradiated Aluminum Gallium Nitride Grown by Molecular Beam Epitaxy by : Michael R. Hogsed
Download or read book Deep Level Defects in Electron-irradiated Aluminum Gallium Nitride Grown by Molecular Beam Epitaxy written by Michael R. Hogsed and published by . This book was released on 2005 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Nitride and Related Materials: Volume 395 by : F. A. Ponce
Download or read book Gallium Nitride and Related Materials: Volume 395 written by F. A. Ponce and published by . This book was released on 1996-09-04 with total page 1008 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reflects the excitement in the scientific community about III-V nitrides. Based on papers presented at the First International Symposium on Gallium Nitride and Related Materials (ISGN-1), it reveals the large amount of work that has taken place since the field exploded with the announcement of commercial blue-light-emitting devices. The compound semiconductors in the III-V nitride systems are of increasing interest for high-performance optoelectronic and electronic device applications. These wide-bandgap semiconductor materials are also of great fundamental scientific interest because of their unique structural, electrical and optical properties. From the advances in the technologies for the heteroepitaxial growth of these materials, leading to improved quality and device performance, it is expected that III-V nitrides will soon be of significant practical and commercial interest. Topics include: crystal growth - substrates and early stages; molecular beam growth techniques; chemical vapor phase and alloys and novel growth techniques; structural properties; electronic properties; optical properties; point defects; hydrogen, etching and other materials processes; surfaces and metal contacts and devices.
Book Synopsis Gallium Nitride and Related Materials II: Volume 468 by : C. R. Abernathy
Download or read book Gallium Nitride and Related Materials II: Volume 468 written by C. R. Abernathy and published by Materials Research Society. This book was released on 1997-08-13 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book from MRS dedicated to III-Nitrides, focuses on developments in AlN, GaN, InN and their alloys that are now finding application in short-wavelength lasers (~400nm, cw at room temperature) and high-power electronics (2.8W/mm at GHz). Experts from fields including crystal growth, condensed matter theory, source chemistry, device processing and device design come together in the volume to address issues of both scientific and technological relevance. And while much of the book reports on advances in material preparation and the understanding of defect issues, similar advances in material and device processing are also reported. Topics include: growth and doping; substrates and substrate effects; characterization; processing and device performance and design.
Book Synopsis Comprehensive Semiconductor Science and Technology by :
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2006 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Defects in Advanced Electronic Materials and Novel Low Dimensional Structures by : Jan Stehr
Download or read book Defects in Advanced Electronic Materials and Novel Low Dimensional Structures written by Jan Stehr and published by Woodhead Publishing. This book was released on 2018-06-29 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in Advanced Electronic Materials and Novel Low Dimensional Structures provides a comprehensive review on the recent progress in solving defect issues and deliberate defect engineering in novel material systems. It begins with an overview of point defects in ZnO and group-III nitrides, including irradiation-induced defects, and then look at defects in one and two-dimensional materials, including carbon nanotubes and graphene. Next, it examines the ways that defects can expand the potential applications of semiconductors, such as energy upconversion and quantum processing. The book concludes with a look at the latest advances in theory. While defect physics is extensively reviewed for conventional bulk semiconductors, the same is far from being true for novel material systems, such as low-dimensional 1D and 0D nanostructures and 2D monolayers. This book fills that necessary gap. Presents an in-depth overview of both conventional bulk semiconductors and low-dimensional, novel material systems, such as 1D structures and 2D monolayers Addresses a range of defects in a variety of systems, providing a comparative approach Includes sections on advances in theory that provide insights on where this body of research might lead
Book Synopsis Technology of Gallium Nitride Crystal Growth by : Dirk Ehrentraut
Download or read book Technology of Gallium Nitride Crystal Growth written by Dirk Ehrentraut and published by Springer Science & Business Media. This book was released on 2010-06-14 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Book Synopsis Hydride vapour phase epitaxy growth, crystal properties and dopant incorporation in gallium nitride by : Patrick Hofmann
Download or read book Hydride vapour phase epitaxy growth, crystal properties and dopant incorporation in gallium nitride written by Patrick Hofmann and published by BoD – Books on Demand. This book was released on 2018-08-15 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation employs doping to investigate basic gallium nitride (GaN) crystal properties and to solve challenges of the hydride vapour phase epitaxy (HVPE) growth process. Whereas the first chapter is a short introduction to the history of the GaN single crystal growth, the 2nd chapter introduces to current crystal growth techniques, discusses properties of the GaN material system and the resulting influence on the applicable crystal growth techniques. HVPE, as a vapour phase epitaxy crystal growth method will be explained in greater detail, with focus on the used vertical reactor and its capabilities for doping. The 3rd chapter then focusses on point defects in GaN, specifically on intentionally introduced extrinsic point defects used for doping purposes, i.e. to achieve p-type, n-type or semi-insulating behaviour. Different dopants will be reviewed before the diffusion of point defects in a solid will be discussed. The in-situ introduction of iron, manganese, and carbon during crystal growth is employed in chapter 4 to compensate the unintentional doping (UID) of the GaN crystals, and therefore to achieve truly semi-insulating behaviour of the HVPE GaN. However the focus of this chapter lies on the characterisation of the pyroelectric coefficient (p), as semi-insulating properties are a necessary requirement for the applied Sharp-Garn measurement method. The creation of tensile stress due to in-situ silicon doping during GaN crystal growth is the topic of the 5th chapter. The tensile stress generation effect will be reproduced and the strain inside the crystal will be monitored ex-situ employing Raman spectroscopy. The n-type doping is achieved by using a vapour phase doping line and a process is developed to hinder the tensile strain generation effect. The 6th chapter concentrates on the delivery of the doping precursor via a solid state doping line, a newly developed doping method. Similar to chapter 5, the doping line is characterised carefully before the germanium doping is employed to the GaN growth. The focus lies on the homogeneity of the germanium doping and it is compared compared to the silicon doping and the vapour phase doping line. Benefits and drawbacks are discussed in conjunction with the obtained results. The germanium doping via solid state doping line is applied to the HVPE GaN growth process to measure accurately growth process related properties unique to the applied set of GaN growth parameters.
Book Synopsis A Study of Carbon and Iron Charged Point Defects in Gallium Nitride by : Mofareh Ahmed Ghazwani
Download or read book A Study of Carbon and Iron Charged Point Defects in Gallium Nitride written by Mofareh Ahmed Ghazwani and published by . This book was released on 2021 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: There is growing demand for high-performance electronics in high volt- age, high current, and high frequency efficiency requirements that current materials (e.g., Si) are not fulfilling. Within the last few years, the rate of development of Si power electronics has slowed as the MOSFET silicon power asymptotically approached its theoretical limits. Gallium natride (GaN) grown on top of a silicon substrate could displace silicon across a significant portion of the power management market. Doping elements in bulk GaN may influence and enhance its prop- erties. Carbon doping of GaN is potentially efficient and useful material for photo-conductive solid-state switches (PCSSs), also called photo-conductive semiconductor switches. However, to make effective use of the rich capabilities of device-scale engineering design tools (e.g., Technology Computer- Aided Design (TCAD)) it is necessary to know a variety of material de- pendent parameters for which experimental results have not been obtained. Therefore, the ability to determine those parameters via ab initio calcula- tions is essential, especially when the material contains some type of defect or dopant. To overcomes this dilemma, we proposed a simulation methodology to extract the needed parameters form atomistic ab initio calculation of bulk (undoped) GaN, carbon-doped GaN, and iron-doped GaN. The proposed method chain was successfully produced the required parameters including electronic structure, polarization properties, phonon calculation, and mechanical and spectroscopic properties for GaN, C-doped GaN, and Fe-GaN crystals. The parameter values were subsequently used in a TCAD tool to compute trans- port properties and breakdown voltage of GaN, C-doped GaN, and Fe-GaN. Result shows that all material properties such as mechanical, optical, polar- ization, transport properties, and the breakdown transport properties and breakdown voltage changed due to the presence of dopants. The comparison of breakdown voltage models for C-doped and Fe-doped GaN channel layers revealed that Fe-doped GaN has a greater breakdown voltage. To produce a more accurate simulation of GaN HEMT, it is necessary to take into account the parameters of a genuine model with their actual values rather than relying on a generic dopant. Key Words: PCSS, GaN, C-doped GaN, Fe-doped GaN, point defect, electronic structure, polarization properties, Piezoelectric constant, phonon calculation, mechanical and optical properties, transport properties, XANES/ELNES spectrscopy, device Simulation (TCAD), Multiscal Methods, OLCAO, breakdown voltage, electron velocity, mobility, scattering rate.
Book Synopsis Gallium Nitride and Related Materials by :
Download or read book Gallium Nitride and Related Materials written by and published by . This book was released on 1997 with total page 538 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Nitride Semiconductor Device Issues by : James Suk Chan
Download or read book Gallium Nitride Semiconductor Device Issues written by James Suk Chan and published by . This book was released on 1995 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Defect and Impurity Engineered Semiconductors and Devices III: Volume 719 by : S. Ashok
Download or read book Defect and Impurity Engineered Semiconductors and Devices III: Volume 719 written by S. Ashok and published by . This book was released on 2002-08-09 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the deliberate introduction and manipulation of defects and impurities in order to engineer desired properties in semiconductor materials and devices. In view of current exciting developments in wide-bandgap semiconductors like GaN for blue light emission, as well as high-speed and high-temperature electronics, dopant and defect issues relevant to these materials are addressed. Also featured are semiconductor nanocavities and nano-structures, with emphasis on the formation and impact of vacancy-type defects. Defect reaction problems pertaining to impurity gettering, precipitation and hydrogen passivation are specific examples of defect engineering that improve the electronic quality of the material. A number of papers also deal with characterization techniques needed to study and to identify defects in materials and device structures. Finally, papers also address issues such as interface control and passivation, application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels, and device applications.
Book Synopsis Defect and Impurity Engineered Semiconductors and Devices by :
Download or read book Defect and Impurity Engineered Semiconductors and Devices written by and published by . This book was released on 2002 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Spectroscopic Characterization of Radiation-induced Defects in Gallium Nitride by : Qing Yang (Ph.D.)
Download or read book Spectroscopic Characterization of Radiation-induced Defects in Gallium Nitride written by Qing Yang (Ph.D.) and published by . This book was released on 2005 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :Cole W. Litton Publisher :SPIE-International Society for Optical Engineering ISBN 13 :9780819461636 Total Pages :322 pages Book Rating :4.4/5 (616 download)
Book Synopsis Gallium Nitride Materials and Devices by : Cole W. Litton
Download or read book Gallium Nitride Materials and Devices written by Cole W. Litton and published by SPIE-International Society for Optical Engineering. This book was released on 2006 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of SPIE present the original research papers presented at SPIE conferences and other high-quality conferences in the broad-ranging fields of optics and photonics. These books provide prompt access to the latest innovations in research and technology in their respective fields. Proceedings of SPIE are among the most cited references in patent literature.
