Electrical Characterization of Process Induced Defects in GaAs by Laplace Deep Level Transient Spectroscopy

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Book Synopsis Electrical Characterization of Process Induced Defects in GaAs by Laplace Deep Level Transient Spectroscopy by : Fatemeh Taghizadeh

Download or read book Electrical Characterization of Process Induced Defects in GaAs by Laplace Deep Level Transient Spectroscopy written by Fatemeh Taghizadeh and published by . This book was released on 2019 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this study, we investigated defects introduced in n-GaAs with different carrier densities by electron irradiation and sputter deposition by means of conventional deep level transient spectroscopy (DLTS) as well as high resolution Laplace deep-level transient spectroscopy (LDLTS). In electron-irradiated material, we found that the well-known E3 defect, of which the origin has long been under discussion, consisted of three components (E3a, E3b and E3c). By constructing Arrhenius plots and performing annealing studies, and by comparing our results with literature, we could deduce that the E3a, the main component of the E3 is related to the VAs, while the E3b is related to the Asi and the E3c was related to the VGa-SiGa. In addition, the E3c was metastable and had a concentration that increased linearly with doping concentration. Further electrical characterization included I-V and C-V measurements, as well as measurements of the introduction rate, metastability, electric field emission mechanisms and capture cross-sections. For the sputter-deposited Schottky contacts, DLTS depth profiles showed that the defects were confined close to the surface and that their depth range depended strongly on the doping concentration, and corresponded roughly with the depletion depth of the Schottky diodes. We conclude that the diffusion of these defects was stronlgy enhanced by the conditions (free carrier density and electric field) in the depletion region. Six defects (S1, S2, S3, S4, S5 and S6) were observed by conventional DLTS and were further investigated by L-DLTS. One of these defects, the S6, could be split into two components while three of them (S1, S3 and S5) were metastable. The transformation kinetics of the metastable defects were investigated and we conclude that the prefactor of S5 to S3 transformation was related to free carrier emission but for the S3 to S5 transformation is larger than would be expected. The activation energy of these transformations was similar to that required for arsenic vacancy (VAs) diffusion. The real capture cross sections as well as capture barriers were measured for the S3, S4 and S5 defects.

Electrical Characterization of Process and Irradiation-induced Defects in GaAs

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ISBN 13 :
Total Pages : 186 pages
Book Rating : 4.:/5 (17 download)

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Book Synopsis Electrical Characterization of Process and Irradiation-induced Defects in GaAs by : Shandirai Malven Tunhuma

Download or read book Electrical Characterization of Process and Irradiation-induced Defects in GaAs written by Shandirai Malven Tunhuma and published by . This book was released on 2016 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium arsenide (GaAs) technology leads the implementation of high frequency devices with superior performance. A vast number of optoelectronic applications are based on the material owing to its direct and wide bandgap. Over the years the number of these applications continues to grow but they remain highly cost-ineffective partly due to the growth techniques and the presence of defects in GaAs. These areas have been researched on intensively over the past four decades with much controversy, particularly on the subject of the EL2 defect. This defect plays an important role in the design and operation of GaAs based devices. It is therefore important to understand its electronic properties and influence on device operation. Schottky barrier diodes (SBDs) were fabricated on n-type GaAs. The quality of the contacts was evaluated using current-voltage (I-V) and capacitance-voltage (C-V) measurements before and after exposing them to different processing techniques and radiation types. Deep-level transient spectroscopy (DLTS) and Laplace deeplevel transient spectroscopy (L-DLTS) were used to characterize the electrically active defects in the material. Defects with almost similar emission rates which were not observed in the past were identified using L-DLTS due to its high resolution. I-V and C-V measurements on as-deposited Au/n-GaAs SBDs in the 80 ?? 480 K range showed that the EL2 defect has a profound effect on the diode characteristics. The influence of the defect caused the temperature dependent behavior of the C-V barrier height to be split into two temperature intervals, each with a unique temperature coefficient. Exposure of the devices to temperatures above 300 K resulted in the deterioration of their I-V characteristics. Permanent physical modification of the SBDs was observed at 400 K and above. Inductively coupled plasma (ICP) etching, Electron beam deposition (EBD) and electron beam exposure (EBE) were observed to impact significantly on diode I-V and C-V.

Uniaxial Stress/DLTS Studies on Deep Level Defects in N-GaAs

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Book Synopsis Uniaxial Stress/DLTS Studies on Deep Level Defects in N-GaAs by : S. J. Hartnett

Download or read book Uniaxial Stress/DLTS Studies on Deep Level Defects in N-GaAs written by S. J. Hartnett and published by . This book was released on 1997 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Defect Characterization of GaAs/AlGaAs Materials and Silicon-on-insulator Devices by Separation-by-implant-of-oxygen

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ISBN 13 :
Total Pages : 206 pages
Book Rating : 4.:/5 (197 download)

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Book Synopsis Defect Characterization of GaAs/AlGaAs Materials and Silicon-on-insulator Devices by Separation-by-implant-of-oxygen by : Chung Gyune Choi

Download or read book Defect Characterization of GaAs/AlGaAs Materials and Silicon-on-insulator Devices by Separation-by-implant-of-oxygen written by Chung Gyune Choi and published by . This book was released on 1988 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation describes the defect characterization of GaAs/AlGaAs epitaxial layers and Silicon-On-Insulator (SOI) devices by Seperation-by-Implant-of-Oxygen technique. a novel experimental theory was developed for this study. A generalized theory for determining the field-enhanced thermal emission rates from the deep level defects using hte Reverse-pulse Deep-Level Transient Spectroscopy (RDLTS) has a potential as a powerful characterization method for the decision on the potential-well types of deep-level defect states. This method enables us to measure the field-enhanced thermal emission rates at very high electric-fields. The previous methods cannot give those experimental data. An experimental theory for determining the temperature dependent capture cross section was developed as the by-product of a generalized theory. This method is simpler and easier than the previous experimental methods. An accurate determination method for the DX center and shallow densities was developed. This method utilizes the thermally stimulated capacities (TSCAP) technique. Under the carrier freeze-out condition the Deep-Level Transient Spectroscopy measurement cannot give the exact DX center density. To make progress in the area of defect characterization, a generalized theory for determining the field-enhanced thermal emission rates must be applied. This method makes use of the first part of capturing transient and hence the DLTS system must have the fast circuitry. The computerized DLTS system with the fast circuit option is commercially available. If this fast DLTS system utilizing a generalized theory is applied, it gives a great deal of flexibility in defect characterization. An accurate forward-bias capacitance spectroscopy was developed for the study of the Schottky interface state. This method is very accurate and efficient compared the previous methods. An accurate forward-bias capacitance spectroscopy is implemented and is fully demonstrated by measuring the real Schottky diode of small area. This method makes a great breakthrough in the area of the metal-semiconductor interface state study.

Influence of Particle Irradiation on the Electrical and Defect Properties of GaAs

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Total Pages : pages
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Book Synopsis Influence of Particle Irradiation on the Electrical and Defect Properties of GaAs by : Stewart Alexander Goodman

Download or read book Influence of Particle Irradiation on the Electrical and Defect Properties of GaAs written by Stewart Alexander Goodman and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The beginning of the space-age in the 1950s led to interest in the effects of radiation on semiconductors. The systematic investigation of defect centres in semiconductors began in earnest over 30 years ago. In addition to defect identification, information was also obtained on energy-level structures and defect migration properties. When designing electronic systems for operation in a radiation environment, t̃is imperative to know the effect of radiation on the properties of electronic components and materials comprising these systems. In some instances, the effects of irradiating electronic materials can be used to obtain desired material properties (mesa isolation, implantation, etc.). However, when electronic devices are exposed to radiation, defects may be introduced into the material. Depending on the application, these defects may have a detrimental effect on the performance of such a device. For this study, the semiconductor gallium arsenide (GaAs) was used and the defects were introduced by electrons, alpha-particles, protons, neutrons and argon sputtering. These particles were generated using radio-nuclides, a high-energy neutron source, a 2.5 MV Van de Graaff accelerator and a sputter gun. The influence of particle irradiation on the device properties of Schottky barrier diodes (SBDs) fabricated on GaAs is presented. These device properties were monitored using a variable temperature current-voltage (I-V) and capacitance-voltage (C-V) apparatus. In order to have an understanding of the change in electrical properties of these contacts after irradiation, it is necessary to characterize the radiation-induced defects. Deep level transient spectroscopy (DLTS) was used to characterise the defects in terms of their DLTS signature, defect concentration, field enhanced emission, and thermodynamic properties.

Quodons in Mica

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Publisher : Springer
ISBN 13 : 3319210459
Total Pages : 572 pages
Book Rating : 4.3/5 (192 download)

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Book Synopsis Quodons in Mica by : Juan F. R. Archilla

Download or read book Quodons in Mica written by Juan F. R. Archilla and published by Springer. This book was released on 2015-07-31 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the current knowledge about nonlinear localized travelling excitations in crystals. Excitations can be vibrational, electronic, magnetic or of many other types, in many different types of crystals, as silicates, semiconductors and metals. The book is dedicated to the British scientist FM Russell, recently turned 80. He found 50 years ago that a mineral mica muscovite was able to record elementary charged particles and much later that also some kind of localized excitations, he called them quodons, was also recorded. The tracks, therefore, provide a striking experimental evidence of quodons existence. The first chapter by him presents the state of knowledge in this topic. It is followed by about 18 chapters from world leaders in the field, reviewing different aspects, materials and methods including experiments, molecular dynamics and theory and also presenting the latest results. The last part includes a personal narration of FM Russell of the deciphering of the marks in mica. It provides a unique way to present the science in an accessible way and also illustrates the process of discovery in a scientist's mind.

Study of Grown-in Defects and Radiation-induced Defects in GaAs and AlxGa1xAs

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Total Pages : 380 pages
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Book Synopsis Study of Grown-in Defects and Radiation-induced Defects in GaAs and AlxGa1xAs by : Weng-Lyang Wang

Download or read book Study of Grown-in Defects and Radiation-induced Defects in GaAs and AlxGa1xAs written by Weng-Lyang Wang and published by . This book was released on 1984 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objectives of this dissertation are (1) to conduct a detailed analysis of the grown-in defects and radiation induced defects in GaAs grown by the LEC, VPE, LPE, and MOCVD techniques under different growth and annealing conditions, (2) to identify the physical origins of the deep-level trap in GaAs, and (3) to determine the potential well of electron traps from analyzing the electric field enhanced emission rates deduced from the non-exponential DLTS data. A detailed theoretical and experimental study of the grown-in defects and radiation- induced defects in GaAs has been carried out in this dissertation; the main research accomplishments derived from this research are summarized as follows: (1) Theoretical and experimental studies of native point defects in GaAs grown by the LEC, VPE, LPE, and MOCVD techniques under different growing and annealing conditions have been made in this research, and the conclusions are listed as follows: (a) high purity GaAs material can be grown for the low arsenic pressure case under optimum cooling condition, (b) GaAs grown under a high arsenic pressure condition will produce more native point defects than lower xi arsenic pressure conditions, (c) arsenic antisite (AS--O defect only can be observed in GaAs grown under an As-rich or high arsenic pressure conditions; this defect can not be produced under low arsenic pressure condition. (2) A new defect model supported by the experimental data has been developed in this work to account for the physical origins of the EL2 electron trap in GaAs. It is shown that the EL2 electron trap may be attributed to two different types of native defects: One is identified as the EL2a (i.e., Ec-0.83eV) electron trap, and the other is designated as the EL2b (Ec-0.76eV) electron trap. The physical origin for the EL2a level is attributed to the doubly-charged arsenic antisite (i.e., AsGg ++) defect, whereas the physical origin for the EL2b electron trap is due to the arsenic-anti site-plus-arsenic vacancy complex (ie., AsGaV,). Based on this model, the relationship between the density of EL2a and EL2b trap levels and the As/Ga ratio in the MOCVD and VPE grown GaAs was established. (3) A theoretical model for the non-exponential DLTS response due to the field dependent emission rate of the trapped charge has been developed. A comparison of the theoretical calculation of the non-exponential DLTS response with the DLTS data for each trap level would allow us to determine the potential well of the trap involved. This method has been applied to identify the physical origins of the EL2a electron trap in GaAs.

Defects and Diffusion in Semiconductors

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ISBN 13 :
Total Pages : 348 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Defects and Diffusion in Semiconductors by :

Download or read book Defects and Diffusion in Semiconductors written by and published by . This book was released on 2007 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Electrical Characterization of GaAs Materials and Devices

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ISBN 13 :
Total Pages : 280 pages
Book Rating : 4.:/5 (133 download)

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Book Synopsis Electrical Characterization of GaAs Materials and Devices by : David C. Look

Download or read book Electrical Characterization of GaAs Materials and Devices written by David C. Look and published by . This book was released on 1992 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Physics Briefs

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ISBN 13 :
Total Pages : 1170 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Physics Briefs by :

Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1170 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Electrical Characterization of Transition Metallic Related Deep Levels in N-GaAs Using DLTS and ODLTS

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ISBN 13 :
Total Pages : 366 pages
Book Rating : 4.:/5 (859 download)

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Book Synopsis Electrical Characterization of Transition Metallic Related Deep Levels in N-GaAs Using DLTS and ODLTS by : André Venter

Download or read book Electrical Characterization of Transition Metallic Related Deep Levels in N-GaAs Using DLTS and ODLTS written by André Venter and published by . This book was released on 1990 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Electrical & Electronics Abstracts

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ISBN 13 :
Total Pages : 2092 pages
Book Rating : 4.3/5 (243 download)

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Book Synopsis Electrical & Electronics Abstracts by :

Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 2092 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Semiconductor Material and Device Characterization

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Publisher : John Wiley & Sons
ISBN 13 : 0471739065
Total Pages : 800 pages
Book Rating : 4.4/5 (717 download)

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Book Synopsis Semiconductor Material and Device Characterization by : Dieter K. Schroder

Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

Diffusion and Defect Data

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Total Pages : 840 pages
Book Rating : 4.E/5 ( download)

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Download or read book Diffusion and Defect Data written by and published by . This book was released on 1995 with total page 840 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Halide Perovskites

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Publisher : John Wiley & Sons
ISBN 13 : 3527341110
Total Pages : 312 pages
Book Rating : 4.5/5 (273 download)

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Book Synopsis Halide Perovskites by : Tze-Chien Sum

Download or read book Halide Perovskites written by Tze-Chien Sum and published by John Wiley & Sons. This book was released on 2019-03-25 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Real insight from leading experts in the field into the causes of the unique photovoltaic performance of perovskite solar cells, describing the fundamentals of perovskite materials and device architectures. The authors cover materials research and development, device fabrication and engineering methodologies, as well as current knowledge extending beyond perovskite photovoltaics, such as the novel spin physics and multiferroic properties of this family of materials. Aimed at a better and clearer understanding of the latest developments in the hybrid perovskite field, this is a must-have for material scientists, chemists, physicists and engineers entering or already working in this booming field.

Index to Theses with Abstracts Accepted for Higher Degrees by the Universities of Great Britain and Ireland and the Council for National Academic Awards

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ISBN 13 :
Total Pages : 362 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Index to Theses with Abstracts Accepted for Higher Degrees by the Universities of Great Britain and Ireland and the Council for National Academic Awards by :

Download or read book Index to Theses with Abstracts Accepted for Higher Degrees by the Universities of Great Britain and Ireland and the Council for National Academic Awards written by and published by . This book was released on 2007 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt:

INIS Atomindeks

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ISBN 13 :
Total Pages : 1376 pages
Book Rating : 4.F/5 ( download)

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Download or read book INIS Atomindeks written by and published by . This book was released on 1985 with total page 1376 pages. Available in PDF, EPUB and Kindle. Book excerpt: