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Author : Jiagang Shen
Publisher :
ISBN 13 :
Total Pages : 74 pages
Book Rating : 4.:/5 (441 download)
Download or read book Electrical characterization of gallium arsenide-on-silicon written by Jiagang Shen and published by . This book was released on 1992 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Mahmut Seli̇m Ünlü
Publisher :
ISBN 13 :
Total Pages : 182 pages
Book Rating : 4.:/5 (2 download)
Download or read book Electrical Characterization of Gallium Arsenide-silicon Heterojunctions for Device Applications written by Mahmut Seli̇m Ünlü and published by . This book was released on 1988 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Rani Khatwani
Publisher :
ISBN 13 :
Total Pages : 108 pages
Book Rating : 4.:/5 (192 download)
Download or read book Electrical Characterization of Epitaxial Layers of Gallium Arsenide written by Rani Khatwani and published by . This book was released on 1988 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Michael Gregg Spencer
Publisher :
ISBN 13 :
Total Pages : 272 pages
Book Rating : 4.E/5 ( download)
Download or read book Electrical Characterization of Grain Boundaries in Gallium Arsenide and Their Relationship to Solar Cell Performance written by Michael Gregg Spencer and published by . This book was released on 1980 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : M. R. Brozel
Publisher : Inst of Engineering & Technology
ISBN 13 : 9780852968857
Total Pages : 981 pages
Book Rating : 4.9/5 (688 download)
Download or read book Properties of Gallium Arsenide written by M. R. Brozel and published by Inst of Engineering & Technology. This book was released on 1996 with total page 981 pages. Available in PDF, EPUB and Kindle. Book excerpt: It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.
Author : Mahesh P. Patkar
Publisher :
ISBN 13 :
Total Pages : 196 pages
Book Rating : 4.:/5 (22 download)
Download or read book Electrical and Structural Characterization of Mo/Si Contacts to Gallium Arsenide written by Mahesh P. Patkar and published by . This book was released on 1989 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Gerard John Sullivan
Publisher :
ISBN 13 :
Total Pages : 141 pages
Book Rating : 4.:/5 (354 download)
Download or read book Molecular Beam Epitaxial Growth and Electrical Characterization of Germanium-on-gallium Arsenide and Gallium Arsenide-on-germanium Heterojunctions written by Gerard John Sullivan and published by . This book was released on 1983 with total page 141 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Frank L. Pedrotti
Publisher :
ISBN 13 :
Total Pages : 8 pages
Book Rating : 4.:/5 (227 download)
Download or read book Electrical Characterization of Germanium Implanted Gallium Arsenide written by Frank L. Pedrotti and published by . This book was released on 1980 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: The amphoteric electrical properties of germanium single implants into gallium arsenide, and of dual implants of germanium with either gallium or arsenic into gallium arsenide, have been studied. Room temperature implantation was performed for all implanted ions at 120 keV, with doses ranging from 5E12 to 3E15 ions per square centimeter. Implanted samples were annealed with pyrolytic silicon nitride encapsulants at temperatures ranging from 700 to 1000 degrees Celsius. Both p- and n-type layers were observed. Type of conductivity, electrical activation, and carrier mobility were found to depend critically upon ion dose and anneal temperature. The general electrical behavior suggests that in samples of lower dose and anneal temperature, the implanted Ge ions go into As sites preferentially, producing p-type activity, whereas in samples of higher dose and anneal temperature, more Ge ions go into Ga sites, producing n-type activity. Conductivity was found to change from p- to n-type at an intermediate dose of 3E14 ions per square centimeter and at an anneal temperature between 900 and 950 degrees Celsius. It has been determined that additional implantation of As into GaAs:Ge favors Ge occupancy of Ga sites and an enhancement of n-type activity, whereas the additional implantation of Ga encourages Ge occupancy of As sites and an enhancement of p-type activity. Enhancement factors of as much as 8 for p-type activations, and as much as 50 for n-type activations have been measured. (Author).
Author : Gerald B. Stringfellow
Publisher : CRC Press
ISBN 13 : 1000157067
Total Pages : 696 pages
Book Rating : 4.0/5 (1 download)
Download or read book Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA written by Gerald B. Stringfellow and published by CRC Press. This book was released on 2020-11-26 with total page 696 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.
Author : Michal Jan Bulkowski
Publisher :
ISBN 13 :
Total Pages : 92 pages
Book Rating : 4.:/5 (726 download)
Download or read book Electrical Characterization of Gallium Arsenide Structures Bonded with Spin-on-glass written by Michal Jan Bulkowski and published by . This book was released on 2005 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Edmond Rowan Ward
Publisher :
ISBN 13 :
Total Pages : 142 pages
Book Rating : 4.:/5 (65 download)
Download or read book The Electrical Properties of the Silicon Nitride-gallium Arsenide Interface written by Edmond Rowan Ward and published by . This book was released on 1970 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : S. Arscott
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (813 download)
Download or read book Electrical Characterization of Delta Doped Gallium Arsenide written by S. Arscott and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (227 download)
Download or read book Characterization of Semi-Insulating Gallium Arsenide written by and published by . This book was released on 1993 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The project was established 11-18-92 to continue for 12 months. Its purpose has been electrical and optical characterization of samples from semi-insulating (SI) melt-grown crystals of gallium arsenide (GaAs). As a further definition of the project's purpose, the primary goal has been to assist NRL in assessing the properties of SI GaAs crystals grown at NRL, by the vertical zone melt (VZM) method. A second aspect of this characterization work has involved samples from SI GaAs crystals grown by various commercial vendors, including samples of pre-synthesized GaAs evaluated for its suitability as starting 'feedstock' for VZM growth. Measurements made at Western Washington University (WWU) under the terms of this project accord with a Statement of Work provided at the outset. These have included (a) low-field dc electrical transport data for SI GaAs samples, as functions of temperature; (b) near-infrared (NIR) transmittance/absorption spectra of polished slabs, with data concerning the well-known EL2 defect determined from NIR absorption strength and spectral form; (c) mid-IR data on absorption caused by carbon acceptors in SI GaAs.
Author : Neil Robin Gardner
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (594 download)
Download or read book Electrical Characteristics of Silicon-doped Gallium Arsenide Lateral P-N Functions written by Neil Robin Gardner and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : John Edwin Foster
Publisher :
ISBN 13 :
Total Pages : 220 pages
Book Rating : 4.:/5 (178 download)
Download or read book Silicon Nitride-gallium Arsenide Interface written by John Edwin Foster and published by . This book was released on 1969 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Ming-Shiann Feng
Publisher :
ISBN 13 :
Total Pages : 202 pages
Book Rating : 4.:/5 (214 download)
Download or read book Growth and Characterization of Gallium Arsenide on Silicon-on-sapphire and Silicon written by Ming-Shiann Feng and published by . This book was released on 1989 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt: A study has been conducted to investigate and compare the growth, strain, defects, electrical and optical properties of GaAs layers grown simultaneously on silicon-on-sapphire (SOS) and Si substrates using a two-step metalorganic chemical vapor deposition (MOCVD) growth procedure. A variety of techniques have been used to characterize and investigate the different properties of these two layers. Among them, x-ray diffraction was used to determine the lattice dimensions and thereby the sign of residual strain, x-ray rocking procedures to measure the strain and crystallinity, and variable temperature x-ray diffraction to investigate the temperature dependence of residual strain. Scanning electron microscopy (SEM) was used to examine the surface morphology. Transmission electron microscopy (TEM) was used to observe the microstructure and defect distribution as well as defect density. Also secondary ion mass spectroscopy (SIMS) was used to study the cross-diffusion from substrates. In addition, capacitance-voltage (C-V) measurements and Hall-effect measurements were used to determine the carrier concentration and mobility. Finally, photoluminescence (PL) was used to observe the low-temperature optical response of GaAs layers. The results of these investigations of GaAs on SOS and Si substrates are compared as a function of the thickness of GaAs layers. Finally, the effects of residual strain, presence of defects and cross-diffusion of Si on electrical and optical properties of GaAs layers are discussed.
Author : Keizo Adomi
Publisher :
ISBN 13 :
Total Pages : 124 pages
Book Rating : 4.:/5 (242 download)
Download or read book Characterization of the Gallium Arsenide on Silicon Interface and the Properties of Gallium Arsenide Devices on Silicon written by Keizo Adomi and published by . This book was released on 1990 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt:
