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Efficiency Enhancement Of Linear Gan Rf Power Amplifiers Using The Doherty Technique
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Book Synopsis Efficiency Enhancement of Linear GaN RF power Amplifiers Using the Doherty Technique by :
Download or read book Efficiency Enhancement of Linear GaN RF power Amplifiers Using the Doherty Technique written by and published by kassel university press GmbH. This book was released on with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Bandwidth and Efficiency Enhancement in Radio Frequency Power Amplifiers for Wireless Transmitters by : Karun Rawat
Download or read book Bandwidth and Efficiency Enhancement in Radio Frequency Power Amplifiers for Wireless Transmitters written by Karun Rawat and published by Springer Nature. This book was released on 2020-03-05 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on broadband power amplifier design for wireless communication. Nonlinear model embedding is described as a powerful tool for designing broadband continuous Class-J and continuous class F power amplifiers. The authors also discuss various techniques for extending bandwidth of load modulation based power amplifiers, such as Doherty power amplifier and Chireix outphasing amplifiers. The book also covers recent trends on digital as well as analog techniques to enhance bandwidth and linearity in wireless transmitters. Presents latest trends in designing broadband power amplifiers; Covers latest techniques for using nonlinear model embedding in designing power amplifiers based on waveform engineering; Describes the latest techniques for extending bandwidth of load modulation based power amplifiers such as Doherty power amplifier and Chireix outphasing amplifiers; Includes coverage of hybrid analog/digital predistortion as wideband solution for wireless transmitters; Discusses recent trends on on-chip power amplifier design with GaN /GaAs MMICs for high frequency applications.
Book Synopsis High-efficiency Linear RF Power Amplifiers Development by : Nuttapong Srirattana
Download or read book High-efficiency Linear RF Power Amplifiers Development written by Nuttapong Srirattana and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Next generation mobile communication systems require the use of linear RF power amplifier for higher data transmission rates. However, linear RF power amplifiers are inherently inefficient and usually require additional circuits or further system adjustments for better efficiency. This dissertation focuses on the development of new efficiency enhancement schemes for linear RF power amplifiers. The multistage Doherty amplifier technique is proposed to improve the performance of linear RF power amplifiers operated in a low power level. This technique advances the original Doherty amplifier scheme by improving the efficiency at much lower power level. The proposed technique is supported by a new approach in device periphery calculation to reduce AM/AM distortion and a further improvement of linearity by the bias adaptation concept. The device periphery adjustment technique for efficiency enhancement of power amplifier integrated circuits is also proposed in this work. The concept is clearly explained together with its implementation on CMOS and SiGe RF power amplifier designs. Furthermore, linearity improvement technique using the cancellation of nonlinear terms is proposed for the CMOS power amplifier in combination with the efficiency enhancement technique. In addition to the efficiency enhancement of power amplifiers, a scalable large-signal MOSFET model using the modified BSIM3v3 approach is proposed. A new scalable substrate network model is developed to enhance the accuracy of the BSIM3v3 model in RF and microwave applications. The proposed model simplifies the modeling of substrate coupling effects in MOS transistor and provides great accuracy in both small-signal and large-signal performances.
Book Synopsis Modeling and Design Techniques for RF Power Amplifiers by : Arvind Raghavan
Download or read book Modeling and Design Techniques for RF Power Amplifiers written by Arvind Raghavan and published by John Wiley & Sons. This book was released on 2008-02-04 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: Achieve higher levels of performance, integration, compactness, and cost-effectiveness in the design and modeling of radio-frequency (RF) power amplifiers RF power amplifiers are important components of any wireless transmitter, but are often the limiting factors in achieving better performance and lower cost in a wireless communication system—presenting the RF IC design community with many challenges. The next-generation technological advances presented in this book are the result of cutting-edge research in the area of large-signal device modeling and RF power amplifier design at the Georgia Institute of Technology, and have the potential to significantly address issues of performance and cost-effectiveness in this area. Richly complemented with hundreds of figures and equations, Modeling and Design Techniques for RF Power Amplifiers introduces and explores the most important topics related to RF power amplifier design under one concise cover. With a focus on efficiency enhancement techniques and the latest advances in the field, coverage includes: Device modeling for CAD Empirical modeling of bipolar devices Scalable modeling of RF MOSFETs Power amplifier IC design Power amplifier design in silicon Efficiency enhancement of RF power amplifiers The description of state-of-the-art techniques makes this book a valuable and handy reference for practicing engineers and researchers, while the breadth of coverage makes it an ideal text for graduate- and advanced undergraduate-level courses in the area of RF power amplifier design and modeling.
Book Synopsis Efficiency Enhancement of Pico-cell Base Station Power Amplifier MMIC in GaN HFET Technology Using the Doherty Technique by : Sashieka Seneviratne
Download or read book Efficiency Enhancement of Pico-cell Base Station Power Amplifier MMIC in GaN HFET Technology Using the Doherty Technique written by Sashieka Seneviratne and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: With the growth of smart phones, the demand for more broadband, data centric technologies are being driven higher. As mobile operators worldwide plan and deploy 4th generation (4G) networks such as LTE to support the relentless growth in mobile data demand, the need for strategically positioned pico-sized cellular base stations known as 'pico-cells' are gaining traction. In addition to having to design a transceiver in a much compact footprint, pico-cells must still face the technical challenges presented by the new 4G systems, such as reduced power consumptions and linear amplification of the signals. The RF power amplifier (PA) that amplifies the output signals of 4G pico-cell systems face challenges to minimize size, achieve high average efficiencies and broader bandwidths while maintaining linearity and operating at higher frequencies. 4G standards as LTE use non-constant envelope modulation techniques with high peak to average ratios. Power amplifiers implemented in such applications are forced to operate at a backed off region from saturation. Therefore, in order to reduce power consumption, a design of a high efficiency PA that can maintain the efficiency for a wider range of radio frequency signals is required. The primary focus of this thesis is to enhance the efficiency of a compact RF amplifier suitable for a 4G pico-cell base station. For this aim, an integrated two way Doherty amplifier design in a compact 10mm x 11.5mm monolithic microwave integrated circuit using GaN device technology is presented. Using non-linear GaN HFETs models, the design achieves high effi-ciencies of over 50% at both back-off and peak power regions without compromising on the stringent linearity requirements of 4G LTE standards. This demonstrates a 17% increase in power added efficiency at 6 dB back off from peak power compared to conventional Class AB amplifier performance. Performance optimization techniques to select between high efficiency and high linearity operation are also presented. Overall, this thesis demonstrates the feasibility of an integrated HFET Doherty amplifier for LTE band 7 which entails the frequencies from 2.62-2.69GHz. The realization of the layout and various issues related to the PA design is discussed and attempted to be solved.
Book Synopsis Doherty Power Amplifiers by : Bumman Kim
Download or read book Doherty Power Amplifiers written by Bumman Kim and published by Academic Press. This book was released on 2018-03-28 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: Doherty Power Amplifiers: From Fundamentals to Advanced Design Methods is a great resource for both RF and microwave engineers and graduate students who want to understand and implement the technology into future base station and mobile handset systems. The book introduces the very basic operational principles of the Doherty Amplifier and its non-ideal behaviors. The different transconductance requirements for carrier and peaking amplifiers, reactive element effect, and knee voltage effect are described. In addition, several methods to correct imperfections are introduced, such as uneven input drive, gate bias adaptation, dual input drive and the offset line technique. Advanced design methods of Doherty Amplifiers are also explained, including multistage/multiway Doherty power amplifiers which can enhance the efficiency of the amplification of a highly-modulated signal. Other covered topics include signal tracking operation which increases the dynamic range, highly efficient saturated amplifiers, and broadband amplifiers, amongst other comprehensive, related topics. Specifically written on the Doherty Power Amplifier by the world’s leading expert, providing an in-depth presentation of principles and design techniques Includes detailed analysis on correcting non-ideal behaviors of Doherty Power Amplifiers Presents advanced Doherty Power Amplifier architectures
Book Synopsis Advanced Techniques in RF Power Amplifier Design by : Steve C. Cripps
Download or read book Advanced Techniques in RF Power Amplifier Design written by Steve C. Cripps and published by Artech House. This book was released on 2002 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: This much-anticipated volume builds on the author's best selling and classic work, RF Power Amplifiers for Wireless Communications (Artech House, 1999), offering experienced engineers a more in-depth understanding of the theory and design of RF power amplifiers. An invaluable reference tool for RF, digital and system level designers, the book includes discussions on the most critical topics for professionals in the field, including envelope power management schemes and linearization.
Book Synopsis High-Efficiency Load Modulation Power Amplifiers for Wireless Communications by : Zhancang Wang
Download or read book High-Efficiency Load Modulation Power Amplifiers for Wireless Communications written by Zhancang Wang and published by Artech House. This book was released on 2017-06-30 with total page 389 pages. Available in PDF, EPUB and Kindle. Book excerpt: This cutting-edge resource presents a complete and systematic overview of the practical design considerations of radio frequency (RF) high efficiency load modulation power amplifiers (PA) for modern wireless communications for 4G and beyond. It provides comprehensive insight into all aspects of load modulation PA design and optimization not only covering design approaches specifically for passive and active load modulation operation but also hybrid with dynamic supply modulation and digital signal processing algorithms required for performance enhancement. Passive load impedance tuner design, dynamic load modulation PA, active load modulation PA and Doherty PA design for efficiently enhancement are explained. Readers find practical guidance into load modulation PA design for bandwidth extension, including video bandwidth enhancement techniques, broadband dynamic load amplifiers, topology selection, design procedures, and network output. This book presents the evolution and integration of classical load modulation PA topologies in order to meet new challenges in the field.
Book Synopsis High Efficiency RF and Microwave Solid State Power Amplifiers by : Paolo Colantonio
Download or read book High Efficiency RF and Microwave Solid State Power Amplifiers written by Paolo Colantonio and published by John Wiley & Sons. This book was released on 2009-07-08 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: Do you want to know how to design high efficiency RF and microwave solid state power amplifiers? Read this book to learn the main concepts that are fundamental for optimum amplifier design. Practical design techniques are set out, stating the pros and cons for each method presented in this text. In addition to novel theoretical discussion and workable guidelines, you will find helpful running examples and case studies that demonstrate the key issues involved in power amplifier (PA) design flow. Highlights include: Clarification of topics which are often misunderstood and misused, such as bias classes and PA nomenclatures. The consideration of both hybrid and monolithic microwave integrated circuits (MMICs). Discussions of switch-mode and current-mode PA design approaches and an explanation of the differences. Coverage of the linearity issue in PA design at circuit level, with advice on low distortion power stages. Analysis of the hot topic of Doherty amplifier design, plus a description of advanced techniques based on multi-way and multi-stage architecture solutions. High Efficiency RF and Microwave Solid State Power Amplifiers is: an ideal tutorial for MSc and postgraduate students taking courses in microwave electronics and solid state circuit/device design; a useful reference text for practising electronic engineers and researchers in the field of PA design and microwave and RF engineering. With its unique unified vision of solid state amplifiers, you won’t find a more comprehensive publication on the topic.
Book Synopsis Partitioning Design Approach for the Reliable Design of Highly Efficient RF Power Amplifiers by : Roshanak Lehna
Download or read book Partitioning Design Approach for the Reliable Design of Highly Efficient RF Power Amplifiers written by Roshanak Lehna and published by kassel university press GmbH. This book was released on 2017-11-13 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt: The modern wireless communication systems require modulated signals with wide modulation bandwidth. This, in turns, requires signals with very high dynamic range and peak-to-average power ratio (PAPR). This means that the amplifier in the base-station has to work at a power back-off as large as the dynamic range of the signal, so that the amplifier has a high linearity in this region. For the standard single-stage amplifiers, this large power back-off reduces the efficiency dramatically. In this work, a three-way Doherty power amplifier (DPA) aiming at high power efficiency within a dynamic range of 9.5 dB, is designed and fabricated using partitioning design approach. The partitioning design approach decomposes a complex design task into small-sized, well-controllable, and verifiable subcircuits. This advanced straight forward method has shown very promising results. Using this design approach, a three-way DPA has been designed to demonstrate the advantages of this reliable design technique as well. Based on the design of a single-stage power amplifier and proposing a novel output power combiner, a 6 W three-way DPA has been designed which allows the mandatory load modulation principle in three-way DPA structures to be realized with simpler elements, whereas the design of a standard Doherty combiner would have been very challenging and not practical due to the extremely small value of its characteristic line impedance. The proposed combiner is calculated for a three-way DPA with 2-mm AlGaN/GaN-HEMTs. The simulation result shows a very good load modulation for the amplifier, which confirms the theoretical expectation for a three-way DPA. The efficiency of the designed 6 W three-way DPA at large back-off shows very promising values compared to recently reported amplifiers. The measured IMD3 products confirm the good linearity of the amplifier as well. Accordingly, the proposed power combiner and the design strategy are recommended to be used as the preferred option for designing three-way DPA structures with very high output power.
Book Synopsis Linearization and Efficiency Enhancement Techniques for Silicon Power Amplifiers by : Eric Kerhervé
Download or read book Linearization and Efficiency Enhancement Techniques for Silicon Power Amplifiers written by Eric Kerhervé and published by Elsevier. This book was released on 2015-01-07 with total page 163 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an overview of current efficiency enhancement and linearization techniques for silicon power amplifier designs. It examines the latest state of the art technologies and design techniques to address challenges for RF cellular mobile, base stations, and RF and mmW WLAN applications. Coverage includes material on current silicon (CMOS, SiGe) RF and mmW power amplifier designs, focusing on advantages and disadvantages compared with traditional GaAs implementations. With this book you will learn: The principles of linearization and efficiency improvement techniques The architectures allowing the optimum design of multimode Si RF and mmW power amplifiers How to make designs more efficient by employing new design techniques such as linearization and efficiency improvement Layout considerations Examples of schematic, layout, simulation and measurement results Addresses the problems of high power generation, faithful construction of non-constant envelope constellations, and efficient and well control power radiation from integrated silicon chips Demonstrates how silicon technology can solve problems and trade-offs of power amplifier design, including price, size, complexity and efficiency Written and edited by the top contributors to the field
Book Synopsis Analysis and Design of Efficiency Enhancement Microwave Power Amplifiers Using the Doherty Technique by :
Download or read book Analysis and Design of Efficiency Enhancement Microwave Power Amplifiers Using the Doherty Technique written by and published by . This book was released on 2013 with total page 217 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Efficiency Enhancement Techniques for RF Power Amplifiers by : Prathamesh H. Pednekar
Download or read book Efficiency Enhancement Techniques for RF Power Amplifiers written by Prathamesh H. Pednekar and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The new generation wireless communication technologies are adopting more complex modulation schemes in order to satisfy the increasing demands of high data rate. As the modulation schemes have evolved from 4-QPSK to OFDM, the peak to average power ratios (PAPRs) have risen from 3.3 dB to 9.6 dB. From the view of RF Power Amplifier (RFPA) designer, high PAPR translates to a challenge of maintaining high efficiency and linearity over wide dynamic range. In a conventional RFPA designs, when the power is backed off from its maximum level, the efficiency drops significantly. Therefore, to maintain the efficiency even when the power is backed-off, it has become necessary to include efficiency enhancement technique with conventional RFPA designs. The outphasing technique is one of the most prominent technique which can deal with challenges created by high PAPRs, in other words high power back-offs. This technique allows the PAs to perform linear amplification and operate at high efficiency even when the power is significantly backed off. This work explores the different ways of improvement in previously established four-way outphasing combiner. First, a new microstrip line based implementation method is demonstrated that reduces the area of the original combiner by 83%. Second, a new experimental control law is introduced which improves the deviation in input impedances by 10% in the mid-power range, and by a factor of 2 at the high power range. Above that, a novel design methodology of dual-band Chireix outphasing combiner, tuned to two arbitrary frequencies, is introduced and the practicality of the network is demonstrated by a microstrip-based implementation, operating at 4.4 GHz and 5.2 GHz. In addition, a CAD based design of two-stage Base station PA is presented. This PA is designed to fit into Envelope Tracking (ET) architecture. The drain supply is made to vary from 20 V to 50 V with the step-size of 10 V. This base station PA produces 150 watt of output power and operates from 1.99 GHz to 2.29 GHz. At the highest drain voltage and at center frequency, the efficiency is observed to be 60.2% with the total gain of >35.8 dB.
Book Synopsis RF Power Amplifiers by : Marian K. Kazimierczuk
Download or read book RF Power Amplifiers written by Marian K. Kazimierczuk and published by John Wiley & Sons. This book was released on 2014-11-26 with total page 685 pages. Available in PDF, EPUB and Kindle. Book excerpt: This second edition of the highly acclaimed RF Power Amplifiers has been thoroughly revised and expanded to reflect the latest challenges associated with power transmitters used in communications systems. With more rigorous treatment of many concepts, the new edition includes a unique combination of class-tested analysis and industry-proven design techniques. Radio frequency (RF) power amplifiers are the fundamental building blocks used in a vast variety of wireless communication circuits, radio and TV broadcasting transmitters, radars, wireless energy transfer, and industrial processes. Through a combination of theory and practice, RF Power Amplifiers, Second Edition provides a solid understanding of the key concepts, the principle of operation, synthesis, analysis, and design of RF power amplifiers. This extensive update boasts: up to date end of chapter summaries; review questions and problems; an expansion on key concepts; new examples related to real-world applications illustrating key concepts and brand new chapters covering ‘hot topics’ such as RF LC oscillators and dynamic power supplies. Carefully edited for superior readability, this work remains an essential reference for research & development staff and design engineers. Senior level undergraduate and graduate electrical engineering students will also find it an invaluable resource with its practical examples & summaries, review questions and end of chapter problems. Key features: • A fully revised solutions manual is now hosted on a companion website alongside new simulations. • Extended treatment of a broad range of topologies of RF power amplifiers. • In-depth treatment of state-of-the art of modern transmitters and a new chapter on oscillators. • Includes problem-solving methodology, step-by-step derivations and closed-form design equations with illustrations.
Book Synopsis Parameter Extraction and Complex Nonlinear Transistor Models by : Gunter Kompa
Download or read book Parameter Extraction and Complex Nonlinear Transistor Models written by Gunter Kompa and published by Artech House. This book was released on 2019-12-31 with total page 610 pages. Available in PDF, EPUB and Kindle. Book excerpt: All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.
Book Synopsis Recent Technical Developments in Energy-Efficient 5G Mobile Cells by : Raed A. Abd-Alhameed
Download or read book Recent Technical Developments in Energy-Efficient 5G Mobile Cells written by Raed A. Abd-Alhameed and published by MDPI. This book was released on 2020-06-17 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses the true innovation in engineering design that may be promoted by blending together models and methodologies from different disciplines, and, in this book, the target was exactly to follow this approach to deliver a new disruptive architecture to deliver these next-generation mobile small cell technologies. According to this design philosophy, the work within this book resides in the intersection of engineering paradigms that includes “cooperation”, “network coding”, and “smart energy-aware frontends”. These technologies will not only be considered as individual building blocks, but re-engineered according to an inter-design approach resulting in the enabler for energy efficient femtocell-like services on the move. The book aims to narrow the gap between the current networking technologies and the foreseen requirements that are targeted at the future development of the 5G mobile and wireless communications networks in terms of the higher networking capacity, the ability to support more users, the lower cost per bit, the enhanced energy efficiency, and adaptability to new services and devices (for example, smart cities, and the Internet of things (IoT)).
