Effect of Disorder and Defects in Ion-Implanted Semiconductors: Electrical and Physiochemical Characterization

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Publisher : Academic Press
ISBN 13 : 9780080864426
Total Pages : 300 pages
Book Rating : 4.8/5 (644 download)

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Book Synopsis Effect of Disorder and Defects in Ion-Implanted Semiconductors: Electrical and Physiochemical Characterization by :

Download or read book Effect of Disorder and Defects in Ion-Implanted Semiconductors: Electrical and Physiochemical Characterization written by and published by Academic Press. This book was released on 1997-05-23 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing. Electrical and Physicochemical Characterization focuses on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Provides basic knowledge of ion implantation-induced defects Focuses on physical mechanisms of defect annealing Utilizes electrical and physico-chemical characterization tools for processed semiconductors Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization

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Author :
Publisher : Academic Press
ISBN 13 : 9780080864433
Total Pages : 316 pages
Book Rating : 4.8/5 (644 download)

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Book Synopsis Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization by :

Download or read book Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization written by and published by Academic Press. This book was released on 1997-06-12 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Provides basic knowledge of ion implantation-induced defects Focuses on physical mechanisms of defect annealing Utilizes electrical, physical, and optical characterization tools for processed semiconductors Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

Identification of Defects in Semiconductors

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Author :
Publisher : Academic Press
ISBN 13 : 9780080864488
Total Pages : 376 pages
Book Rating : 4.8/5 (644 download)

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Book Synopsis Identification of Defects in Semiconductors by :

Download or read book Identification of Defects in Semiconductors written by and published by Academic Press. This book was released on 1998-07-02 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Isotope Effects in Solid State Physics

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Publisher : Academic Press
ISBN 13 : 9780080540962
Total Pages : 268 pages
Book Rating : 4.5/5 (49 download)

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Download or read book Isotope Effects in Solid State Physics written by and published by Academic Press. This book was released on 2000-10-24 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. First book on the extremely fashionable subject Adopts an original approach to the subject Timely book in a field making significant progress Introduces new optical tools for solid state physics with wide technological potential Important applications are to be expected for information storage, isotopic fiber-optics, and tunable solid state lasers, isotopic optoelectronics, as well as neutron transmutation doping Accessible to physics, chemists, electronic engineers, and materials scientists Contents based on recent theoretical developments

Defects in Semiconductors

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Author :
Publisher : Academic Press
ISBN 13 : 0128019409
Total Pages : 458 pages
Book Rating : 4.1/5 (28 download)

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Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Expert contributors Reviews of the most important recent literature Clear illustrations A broad view, including examination of defects in different semiconductors

Processing and Properties of Compound Semiconductors

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Author :
Publisher : Elsevier
ISBN 13 : 0080541011
Total Pages : 333 pages
Book Rating : 4.0/5 (85 download)

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Book Synopsis Processing and Properties of Compound Semiconductors by :

Download or read book Processing and Properties of Compound Semiconductors written by and published by Elsevier. This book was released on 2001-10-20 with total page 333 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.

Hydrogen in Semiconductors II

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Publisher : Academic Press
ISBN 13 : 0080525253
Total Pages : 541 pages
Book Rating : 4.0/5 (85 download)

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Book Synopsis Hydrogen in Semiconductors II by :

Download or read book Hydrogen in Semiconductors II written by and published by Academic Press. This book was released on 1999-05-05 with total page 541 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. Provides the most in-depth coverage of hydrogen in silicon available in a single source Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors Combines both experimental and theoretical studies to form a comprehensive reference

Ultrafast Physical Processes in Semiconductors

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Author :
Publisher : Elsevier
ISBN 13 : 9780080540955
Total Pages : 468 pages
Book Rating : 4.5/5 (49 download)

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Book Synopsis Ultrafast Physical Processes in Semiconductors by :

Download or read book Ultrafast Physical Processes in Semiconductors written by and published by Elsevier. This book was released on 2000-10-06 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Electroluminescence II

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Publisher : Academic Press
ISBN 13 : 9780080864631
Total Pages : 257 pages
Book Rating : 4.8/5 (646 download)

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Book Synopsis Electroluminescence II by :

Download or read book Electroluminescence II written by and published by Academic Press. This book was released on 1999-10-29 with total page 257 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

High Brightness Light Emitting Diodes

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Publisher : Academic Press
ISBN 13 : 9780080864457
Total Pages : 469 pages
Book Rating : 4.8/5 (644 download)

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Book Synopsis High Brightness Light Emitting Diodes by :

Download or read book High Brightness Light Emitting Diodes written by and published by Academic Press. This book was released on 1998-02-09 with total page 469 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume 48in the Semiconductors and Semimetals series discusses the physics and chemistry of electronic materials, a subject of growing practical importance in the semiconductor devices industry. The contributors discuss the current state of knowledge and provide insight into future developments of this important field.

Advances in Thermoelectric Materials I

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Publisher : Elsevier
ISBN 13 : 9780080540979
Total Pages : 326 pages
Book Rating : 4.5/5 (49 download)

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Book Synopsis Advances in Thermoelectric Materials I by :

Download or read book Advances in Thermoelectric Materials I written by and published by Elsevier. This book was released on 2000-11-07 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Gallium-Nitride (GaN) II

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Author :
Publisher : Academic Press
ISBN 13 : 0080864554
Total Pages : 509 pages
Book Rating : 4.0/5 (88 download)

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Book Synopsis Gallium-Nitride (GaN) II by :

Download or read book Gallium-Nitride (GaN) II written by and published by Academic Press. This book was released on 1998-10-22 with total page 509 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Silicon Epitaxy

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Author :
Publisher : Elsevier
ISBN 13 : 0080541003
Total Pages : 514 pages
Book Rating : 4.0/5 (85 download)

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Book Synopsis Silicon Epitaxy by :

Download or read book Silicon Epitaxy written by and published by Elsevier. This book was released on 2001-09-26 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.

Recent Trends in Thermoelectric Materials Research: Part Three

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Author :
Publisher : Elsevier
ISBN 13 : 0080540996
Total Pages : 305 pages
Book Rating : 4.0/5 (85 download)

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Book Synopsis Recent Trends in Thermoelectric Materials Research: Part Three by :

Download or read book Recent Trends in Thermoelectric Materials Research: Part Three written by and published by Elsevier. This book was released on 2001-01-03 with total page 305 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Thermoelectric materials may be used for solid state refrigeration or power generation applications via the large Peltier effect in these materials. To be an effective thermoelectric material, a material must possess a large Seebeck coefficient, a low resistivity and a low thermal conductivity. Due to increased need for alternative energy sources providing environmentally friendly refrigeration and power generation, thermoelectric materials research experienced a rebirth in the mid 1990's. Semiconductors and Semimetals, Volume 71: Recent Trends in Thermoelectric Materials Research: Part Three provides an overview of much of this research in thermoelectric materials during the decade of the 1990's. New materials and new material concepts such as quantum well and superlattice structures gave hope to the possibilities that might be achieved. An effort was made to focus on these new materials and not on materials such as BiTe alloys, since such recent reviews are available. Experts in the field who were active researchers during this period were the primary authors to this series of review articles. This is the most complete collection of review articles that are primarily focussed on new materials and new concepts that is existence to date.

Self-Assembled InGaAs/GaAs Quantum Dots

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Author :
Publisher : Academic Press
ISBN 13 : 0080864589
Total Pages : 385 pages
Book Rating : 4.0/5 (88 download)

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Book Synopsis Self-Assembled InGaAs/GaAs Quantum Dots by :

Download or read book Self-Assembled InGaAs/GaAs Quantum Dots written by and published by Academic Press. This book was released on 1999-03-29 with total page 385 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is concerned with the crystal growth, optical properties, and optical device application of the self-formed quantum dot, which is one of the major current subjects in the semiconductor research field.The atom-like density of states in quantum dots is expected to drastically improve semiconductor laser performance, and to develop new optical devices. However, since the first theoretical prediction for its great possibilities was presented in 1982, due to the difficulty of their fabrication process. Recently, the advent of self-organized quantum dots has made it possible to apply the results in important optical devices, and further progress is expected in the near future.The authors, working for Fujitsu Laboratories, are leading this quantum-dot research field. In this volume, they describe the state of the art in the entire field, with particular emphasis on practical applications.

Germanium Silicon: Physics and Materials

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Author :
Publisher : Academic Press
ISBN 13 : 0080864546
Total Pages : 459 pages
Book Rating : 4.0/5 (88 download)

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Book Synopsis Germanium Silicon: Physics and Materials by :

Download or read book Germanium Silicon: Physics and Materials written by and published by Academic Press. This book was released on 1998-11-09 with total page 459 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Uncooled Infrared Imaging Arrays and Systems

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Author :
Publisher : Academic Press
ISBN 13 : 9780080864440
Total Pages : 341 pages
Book Rating : 4.8/5 (644 download)

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Book Synopsis Uncooled Infrared Imaging Arrays and Systems by :

Download or read book Uncooled Infrared Imaging Arrays and Systems written by and published by Academic Press. This book was released on 1997-11-24 with total page 341 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book to describe an emerging but already growing technology of thermal imaging based on uncooled infrared imaging arrays and systems, which are the most exciting new developments in infrared technology today. This technology is of great importance to developers and users of thermal images for military and commercial applications. The chapters, prepared by world leaders in the technology, describe not only the mainstream efforts, but also exciting new approaches and fundamental limits applicable to all. Unified approach to technology development based on fundamental limits Individual chapters written by world leaders in each technology Novel potential approaches, allowing for the reduction of costs, described in detail Descriptive and analytical Provides details of the mainstream approaches--resistive bolometric, pyroelectric/field enhanced pyroelectric, thermoelectric Provides insight into a unified approach to development of all types of thermal imaging arrays Features state-of-the-art and selected new developments