Drift Mobilities in Semiconductors

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Publisher :
ISBN 13 :
Total Pages : 336 pages
Book Rating : 4.3/5 (243 download)

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Book Synopsis Drift Mobilities in Semiconductors by : A. Slocum

Download or read book Drift Mobilities in Semiconductors written by A. Slocum and published by . This book was released on 1954 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Organic Semiconductors for Optoelectronics

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Publisher : John Wiley & Sons
ISBN 13 : 1119146100
Total Pages : 388 pages
Book Rating : 4.1/5 (191 download)

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Book Synopsis Organic Semiconductors for Optoelectronics by : Hiroyoshi Naito

Download or read book Organic Semiconductors for Optoelectronics written by Hiroyoshi Naito and published by John Wiley & Sons. This book was released on 2021-08-02 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprehensive coverage of organic electronics, including fundamental theory, basic properties, characterization methods, device physics, and future trends Organic semiconductor materials have vast commercial potential for a wide range of applications, from self-emitting OLED displays and solid-state lighting to plastic electronics and organic solar cells. As research in organic optoelectronic devices continues to expand at an unprecedented rate, organic semiconductors are being applied to flexible displays, biosensors, and other cost-effective green devices in ways not possible with conventional inorganic semiconductors. Organic Semiconductors for Optoelectronics is an up-to-date review of the both the fundamental theory and latest research and development advances in organic semiconductors. Featuring contributions from an international team of experts, this comprehensive volume covers basic properties of organic semiconductors, characterization techniques, device physics, and future trends in organic device development. Detailed chapters provide key information on the device physics of organic field-effect transistors, organic light-emitting diodes, organic solar cells, organic photosensors, and more. This authoritative resource: Provides a clear understanding of the optoelectronic properties of organic semiconductors and their influence to overall device performance Explains the theories behind relevant mechanisms in organic semiconducting materials and in organic devices Discusses current and future trends and challenges in the development of organic optoelectronic devices Reviews electronic properties, device mechanisms, and characterization techniques of organic semiconducting materials Covers theoretical concepts of optical properties of organic semiconductors including fluorescent, phosphorescent, and thermally-assisted delayed fluorescent emitters An important new addition to the Wiley Series in Materials for Electronic & Optoelectronic Applications, Organic Semiconductors for Optoelectronics bridges the gap between advanced books and undergraduate textbooks on semiconductor physics and solid-state physics. It is essential reading for academic researchers, graduate students, and industry professionals involved in organic electronics, materials science, thin film devices, and optoelectronics research and development.

A Dictionary of Electronics and Electrical Engineering

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Publisher : Oxford University Press
ISBN 13 : 0191038660
Total Pages : 1055 pages
Book Rating : 4.1/5 (91 download)

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Book Synopsis A Dictionary of Electronics and Electrical Engineering by : Andrew Butterfield

Download or read book A Dictionary of Electronics and Electrical Engineering written by Andrew Butterfield and published by Oxford University Press. This book was released on 2018-06-14 with total page 1055 pages. Available in PDF, EPUB and Kindle. Book excerpt: This popular dictionary, formerly published as the Penguin Dictionary of Electronics, has been extensively revised and updated, providing more than 5,000 clear, concise, and jargon-free A-Z entries on key terms, theories, and practices in the areas of electronics and electrical science. Topics covered include circuits, power, systems, magnetic devices, control theory, communications, signal processing, and telecommunications, together with coverage of applications areas such as image processing, storage, and electronic materials. The dictionary is enhanced by dozens of equations and nearly 400 diagrams. It also includes 16 appendices listing mathematical tables and other useful data, including essential graphical and mathematical symbols, fundamental constants, technical reference tables, mathematical support tools, and major innovations in electricity and electronics. More than 50 useful web links are also included with appropriate entries, accessible via a dedicated companion website. A Dictionary of Electronics and Electrical Engineering is the most up-to-date quick reference dictionary available in its field, and is a practical and wide-ranging resource for all students of electronics and of electrical engineering.

Semiconductor Material and Device Characterization

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Publisher : John Wiley & Sons
ISBN 13 : 0471739065
Total Pages : 800 pages
Book Rating : 4.4/5 (717 download)

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Book Synopsis Semiconductor Material and Device Characterization by : Dieter K. Schroder

Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

Electron Transport Phenomena in Semiconductors

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Publisher : World Scientific
ISBN 13 : 9789810212834
Total Pages : 416 pages
Book Rating : 4.2/5 (128 download)

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Book Synopsis Electron Transport Phenomena in Semiconductors by : B. M. Askerov

Download or read book Electron Transport Phenomena in Semiconductors written by B. M. Askerov and published by World Scientific. This book was released on 1994 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first systematic and detailed exposition of the linear theory of the stationary electron transport phenomena in semiconductors. Arbitrary isotropic and anisotropic nonparabolic bands as well as p-Ge-type bands are considered. Phonon drag effect are taken account of in an arbitrary nonquantizing magnetic field. Scattering theory is discussed in detail with account taken of the Bloch wave functions effect. Transport phenomena in the quantizing magnetic field are studied as well as the size effects in thin films. Band structures of the semiconductors and semiconductor compounds of interest are also considered.The main part of the book deals with the three important problems: charge carrier statistics in a semiconductor, classical and quantum theory of the electron transport phenomena. All the theoretical results considered as well as the validity conditions are presented in the form which may be directly used to interpret experimental data.

Physical Properties of III-V Semiconductor Compounds

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Publisher : John Wiley & Sons
ISBN 13 : 9780471573296
Total Pages : 342 pages
Book Rating : 4.5/5 (732 download)

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Book Synopsis Physical Properties of III-V Semiconductor Compounds by : Sadao Adachi

Download or read book Physical Properties of III-V Semiconductor Compounds written by Sadao Adachi and published by John Wiley & Sons. This book was released on 1992-11-10 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.

Semiconductor Physics

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Publisher : Springer Nature
ISBN 13 : 3031182863
Total Pages : 1408 pages
Book Rating : 4.0/5 (311 download)

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Book Synopsis Semiconductor Physics by : Karl W. Böer

Download or read book Semiconductor Physics written by Karl W. Böer and published by Springer Nature. This book was released on 2023-02-02 with total page 1408 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook gives a complete and detailed survey of the field of semiconductor physics. It addresses every fundamental principle, the most important research topics and results, as well as conventional and emerging new areas of application. Additionally it provides all essential reference material on crystalline bulk, low-dimensional, and amorphous semiconductors, including valuable data on their optical, transport, and dynamic properties. This updated and extended second edition includes essential coverage of rapidly advancing areas in semiconductor physics, such as topological insulators, quantum optics, magnetic nanostructures and spintronic systems. Richly illustrated and authored by a duo of internationally acclaimed experts in solar energy and semiconductor physics, this handbook delivers in-depth treatment of the field, reflecting a combined experience spanning several decades as both researchers and educators. Offering a unique perspective on many issues, Semiconductor Physics is an invaluable reference for physicists, materials scientists and engineers throughout academia and industry.

Semiconductor Physical Electronics

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Publisher : Springer Science & Business Media
ISBN 13 : 146130489X
Total Pages : 514 pages
Book Rating : 4.4/5 (613 download)

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Book Synopsis Semiconductor Physical Electronics by : Sheng S. Li

Download or read book Semiconductor Physical Electronics written by Sheng S. Li and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this book is to provide the reader with a self-contained treatment of fundamen tal solid state and semiconductor device physics. The material presented in the text is based upon the lecture notes of a one-year graduate course sequence taught by this author for many years in the ·Department of Electrical Engineering of the University of Florida. It is intended as an introductory textbook for graduate students in electrical engineering. However, many students from other disciplines and backgrounds such as chemical engineering, materials science, and physics have also taken this course sequence, and will be interested in the material presented herein. This book may also serve as a general reference for device engineers in the semiconductor industry. The present volume covers a wide variety of topics on basic solid state physics and physical principles of various semiconductor devices. The main subjects covered include crystal structures, lattice dynamics, semiconductor statistics, energy band theory, excess carrier phenomena and recombination mechanisms, carrier transport and scattering mechanisms, optical properties, photoelectric effects, metal-semiconductor devices, the p--n junction diode, bipolar junction transistor, MOS devices, photonic devices, quantum effect devices, and high speed III-V semiconductor devices. The text presents a unified and balanced treatment of the physics of semiconductor materials and devices. It is intended to provide physicists and mat erials scientists with more device backgrounds, and device engineers with a broader knowledge of fundamental solid state physics.

Photoelectric Properties and Applications of Low-Mobility Semiconductors

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Publisher : Springer
ISBN 13 : 3540470301
Total Pages : 105 pages
Book Rating : 4.5/5 (44 download)

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Book Synopsis Photoelectric Properties and Applications of Low-Mobility Semiconductors by : Rolf Könenkamp

Download or read book Photoelectric Properties and Applications of Low-Mobility Semiconductors written by Rolf Könenkamp and published by Springer. This book was released on 2003-07-01 with total page 105 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume discusses the photoelectric behavior of three semiconducting thin film materials hydrogenated amorphous silicon (a Si:H), nano porous titanium dioxide, and the fullerene C60. Despite the fundamental structural differences between these materials, their electronic properties are at least on the phenomenological level surprisingly similar, since all three materials have rather low carrier mobilities. In the last decade a Si:H has conquered large market segments in photo voltaics, fiat panel displays and detector applications. It is surely the most advanced and best understood of the three materials. Nano porous Ti02 is used successfully in a novel solar cell featuring an organic dye absorber. This product is now at the brink of commercialization, while electronic applica tions for C60 still appear to be in the exploration phase. At this stage it appears that some of the insight and many of the exper imental techniques used in the development of a Si:H may prove useful in the on going and yet very basic study of TiO2 and C60 thin films. This idea is the guideline to this book. Without being comprehensive on the part of amorphous silicon, it attempts to outline basic characterization schemes for the nano porous and fullerene materials, and to evaluate their potential for applications with respect to a reference, which is given by a Si:H.

Molecular Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 3642700128
Total Pages : 302 pages
Book Rating : 4.6/5 (427 download)

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Book Synopsis Molecular Semiconductors by : J. Simon

Download or read book Molecular Semiconductors written by J. Simon and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the past thirty years considerable efforts have been made to design the synthesis and the study of molecular semiconductors. Molecular semiconductors - and more generally molecular materials - involve interactions between individual subunits which can be separately synthesized. Organic and metallo-organic derivatives are the basis of most of the molecular materials. A survey of the literature on molecular semiconductors leaves one rather confused. It does seem to be very difficult to correlate the molecular structure of these semiconductors with their experimental electrical properties. For inorganic materials a simple definition delimits a fairly homogeneous family. If an inorganic material has a conductivity intermediate between that of an 12 1 1 3 1 1 insulator « 10- n- cm- ) and that of a metal (> 10 n- cm- ), then it is a semiconductor and will exhibit the characteristic properties of this family, such as junction formation, photoconductivity, and the photovoltaic effect. For molecular compounds, such simplicity is certainly not the case. A huge number of molecular and macromolecular systems have been described which possess an intermediate conductivity. However, the various attempts which have been made to rationalize their properties have, more often than not, failed. Even very basic electrical properties such as the mechanism of the charge carrier formation or the nature and the density ofthe dopants are not known in detail. The study of molecular semiconductor junctions is very probably the most powerful approach to shed light on these problems.

Amorphous Oxide Semiconductors

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Publisher : John Wiley & Sons
ISBN 13 : 1119715571
Total Pages : 644 pages
Book Rating : 4.1/5 (197 download)

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Book Synopsis Amorphous Oxide Semiconductors by : Hideo Hosono

Download or read book Amorphous Oxide Semiconductors written by Hideo Hosono and published by John Wiley & Sons. This book was released on 2022-05-31 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt: AMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of—and latest developments in—transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices. WILEY SID Series in Display Technology Series Editor: Ian Sage, Abelian Services, Malvern, UK The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.

Applied Scanning Probe Methods X

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Publisher : Springer Science & Business Media
ISBN 13 : 3540740856
Total Pages : 475 pages
Book Rating : 4.5/5 (47 download)

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Book Synopsis Applied Scanning Probe Methods X by : Bharat Bhushan

Download or read book Applied Scanning Probe Methods X written by Bharat Bhushan and published by Springer Science & Business Media. This book was released on 2007-12-20 with total page 475 pages. Available in PDF, EPUB and Kindle. Book excerpt: The volumes VIII, IX and X examine the physical and technical foundation for recent progress in applied scanning probe techniques. This is the first book to summarize the state-of-the-art of this technique. The field is progressing so fast that there is a need for a set of volumes every 12 to 18 months to capture latest developments. These volumes constitute a timely comprehensive overview of SPM applications.

Silicon Solid State Devices and Radiation Detection

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Publisher : World Scientific
ISBN 13 : 9814390046
Total Pages : 430 pages
Book Rating : 4.8/5 (143 download)

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Book Synopsis Silicon Solid State Devices and Radiation Detection by : Claude Leroy

Download or read book Silicon Solid State Devices and Radiation Detection written by Claude Leroy and published by World Scientific. This book was released on 2012 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses the fundamental principles of interaction between radiation and matter, the principles of working and the operation of particle detectors based on silicon solid state devices. It covers a broad scope with respect to the fields of application of radiation detectors based on silicon solid state devices from low to high energy physics experiments including in outer space and in the medical environment. This book covers state-of-the-art detection techniques in the use of radiation detectors based on silicon solid state devices and their readout electronics, including the latest developments on pixelated silicon radiation detector and their application. The content and coverage of the book benefit from the extensive experience of the two authors who have made significant contributions as researchers as well as in teaching physics students in various universities.

Quantum Processes in Semiconductors

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Publisher : Oxford University Press, USA
ISBN 13 : 0199677212
Total Pages : 449 pages
Book Rating : 4.1/5 (996 download)

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Book Synopsis Quantum Processes in Semiconductors by : B. K. Ridley

Download or read book Quantum Processes in Semiconductors written by B. K. Ridley and published by Oxford University Press, USA. This book was released on 2013-08-08 with total page 449 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book sets out the fundamental quantum processes that are important in the physics and technology of semiconductors. The fifth edition includes three new chapters that expand the coverage of semiconductor physics relevant to its accompanying technology.

Physics of Nanostructured Solid State Devices

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Publisher : Springer Science & Business Media
ISBN 13 : 1461411416
Total Pages : 564 pages
Book Rating : 4.4/5 (614 download)

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Book Synopsis Physics of Nanostructured Solid State Devices by : Supriyo Bandyopadhyay

Download or read book Physics of Nanostructured Solid State Devices written by Supriyo Bandyopadhyay and published by Springer Science & Business Media. This book was released on 2012-02-17 with total page 564 pages. Available in PDF, EPUB and Kindle. Book excerpt: Physics of Nanostructured Solid State Devices introduces readers to theories and concepts such as semi-classical and quantum mechanical descriptions of electron transport, methods for calculations of band structures in solids with applications in calculation of optical constants, and other advanced concepts. The information presented here will equip readers with the necessary tools to carry out cutting edge research in modern solid state nanodevices.

Advanced Gate Stacks for High-Mobility Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 354071491X
Total Pages : 397 pages
Book Rating : 4.5/5 (47 download)

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Book Synopsis Advanced Gate Stacks for High-Mobility Semiconductors by : Athanasios Dimoulas

Download or read book Advanced Gate Stacks for High-Mobility Semiconductors written by Athanasios Dimoulas and published by Springer Science & Business Media. This book was released on 2008-01-01 with total page 397 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.

Silicon Quantum Integrated Circuits

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Publisher : Springer Science & Business Media
ISBN 13 : 3540263829
Total Pages : 367 pages
Book Rating : 4.5/5 (42 download)

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Book Synopsis Silicon Quantum Integrated Circuits by : E. Kasper

Download or read book Silicon Quantum Integrated Circuits written by E. Kasper and published by Springer Science & Business Media. This book was released on 2005-12-11 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: Quantum size effects are becoming increasingly important in microelectronics, as the dimensions of the structures shrink laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room-temperature operation. The basic physical principles, materials, technological aspects, and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.