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Displacement Damage And Ionization Effects In Advanced Silicon Germanium Heterojunction Bipolar Transistors
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Book Synopsis Displacement Damage and Ionization Effects in Advanced Silicon-germanium Heterojunction Bipolar Transistors by : Akil K. Sutton
Download or read book Displacement Damage and Ionization Effects in Advanced Silicon-germanium Heterojunction Bipolar Transistors written by Akil K. Sutton and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A summary of total dose effects observe in advanced Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) is presented in this work. The principal driving froces behind the increased use of SiGe BiCMOS technology in space based electronics systems are outlined in the motivation Section of Chapter I. This is followed by a discussion of the strained layer Si/SiGe material structure and relevant fabrication techniques used in the development of the first generation of this technology. A comprehensive description of the device performance is presented. Chapter II presents an overview of radiation physics as it applies to microelectronic devices. Several sources of radiation are discussed including the environments encountered by satellites in different orbital paths around the earth. The particle types, interaction mechanisms and damage nomenclature are described. Proton irradiation experiments to analyze worst case displacement and ionization damage are examined in chapter III. A description of the test conditions is first presented, followed by the experimental results on the observed dc and ac transistor performance metrics with incident radiation. The impact of the collector doping level on the degradation is discussed. In a similar fashion, gamma irradiation experiments to focus on ionization only effects are presented in chapter IV. The experimental design and dc results are first presented, followed by a comparison of degradation under proton irradiation. Additional proton dose rate experiments conducted to further investigate observed differences between proton and gamma results are presented.
Book Synopsis Research on the Radiation Effects and Compact Model of SiGe HBT by : Yabin Sun
Download or read book Research on the Radiation Effects and Compact Model of SiGe HBT written by Yabin Sun and published by Springer. This book was released on 2017-10-24 with total page 187 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.
Book Synopsis Silicon Germanium Heterojunction Bipolar Transistors by : Jessica E. Metcalfe
Download or read book Silicon Germanium Heterojunction Bipolar Transistors written by Jessica E. Metcalfe and published by . This book was released on 2006 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Radiation Effects in III-V Heterojunction Bipolar Transistors by : Soujanya Vuppala
Download or read book Radiation Effects in III-V Heterojunction Bipolar Transistors written by Soujanya Vuppala and published by . This book was released on 2004 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electron and neutron irradiation effects in InGaP/GaAs single heterojunction bipolar transistors are investigated in this thesis. Devices with different emitter sizes and grown by two different growth techniques were examined. Based on the physics of heterojunction bipolar transistors and concepts of radiation damage mechanisms, the irradiation effects were analyzed. The devices were subjected to electron and neutron irradiation and were electrically characterized before and after irradiation. Under electron irradiation these devices were quite robust up to a fluence of 6.69x 10^15 e/cm^2. However, a more careful analysis showed a slight gain improvement at a low base current and a small gain degradation at higher base currents. The gain increase at small base currents and low fluence is believed to be caused by the ionization damage in the polyimide passivation layer. The gain degradation at higher fluence and high base currents is due to the displacement damage in the emitter-base junction region. In the case of neutron irradiation the major effects were (1) the decrease of collector current or equivalently the common-emitter DC current gain reduction and (2) the collector-emitter offset voltage shift. At low fluence of neutron irradiation, a small gain increase is observed at low base currents which is caused by the suppression of the base current due to ionization effect. At higher fluence, gain degradation is observed whose magnitude depends upon the nature and fluence of the irradiation particle. This degradation is caused by the displacement damage in the SCR leading to the current gain degradation at all base currents. In addition to the gain degradation, neutron irradiation causes a shift of the collector-emitter offset voltage, which is caused by the displacement damage in the base-collector region.
Book Synopsis Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors by : Andreas Pawlak
Download or read book Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors written by Andreas Pawlak and published by Tudpress Verlag Der Wissenschaften Gmbh. This book was released on 2015-10-14 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and complexity of the systems, accurate compact models are essential in order to enable robust circuit design. This thesis focuses on selected important physical effects in advanced SiGe HBTs, which have been either insufficiently modeled or completely missing in conventional compact models. New compact model equations for the transfer current were derived and successfully applied to a large set of different technologies. Hereby, the "Generalized Integral Charge Control Relation" was used as a foundation. A physics-based model utilizing small-signal parameters obtained from measurements is derived for modeling the current dependent collector charge. A brief chapter about substrate effects in bipolar transistors comprises the derivation of a compact model for the bias-dependent substrate resistance as well as a proper partitioning of the substrate capacitance. New extraction methods for compact model parameters are introduced and the application of existing methods to advanced processes is discussed. The derived joint extraction method for the emitter and thermal resistance as well as a scalable model for the transfer current have been successfully applied to experimental data of fast HBTs. The derived model equations were applied to a selected very advanced SiGe HBT process developed by IHP. Highly accurate models for DC- and small-signal as well as for large-signal characteristics are presented.
Book Synopsis Geometrical Scaling and Radiation Effects in Silicon-germanium Heterojunction Bipolar Transistors by : Shiming Zhang
Download or read book Geometrical Scaling and Radiation Effects in Silicon-germanium Heterojunction Bipolar Transistors written by Shiming Zhang and published by . This book was released on 2002 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Radiation Effects in Silicon-Germanium Heterojunction Bipolar Transistor Technology by : Ramkumar Krithivasan
Download or read book Radiation Effects in Silicon-Germanium Heterojunction Bipolar Transistor Technology written by Ramkumar Krithivasan and published by . This book was released on 2002 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Mixed-mode Reliability Stress of Silicon-germanium Heterojunction Bipolar Transistors by : Chendong Zhu
Download or read book The Mixed-mode Reliability Stress of Silicon-germanium Heterojunction Bipolar Transistors written by Chendong Zhu and published by . This book was released on 2007 with total page 101 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation covers the following topics: (1) Introduces a new mixed-mode stress technique: time cumulative stress (Chapter II, also published in [23] and [24]). (2) Identifies impact ionization effects in the stress damage (Chapter II, also published in [23] and [24]). (3) Investigates for the first time mixed-mode damage using TCAD simulations at both room temperature and cryogenic temperatures (Chapter III and IV, also published in [23][24][62]). (4) Analyzes for the first time impact of self-heating on mixed-mode stress response, and identifies a temperature triggered damage threshold (Chapter II, will be published in [25]). (5) Explains the geometrical scaling issues in mixed-mode stress and explores mixed-mode stress reliability scaling trends (Chapter II, will be published in [25]). (6) Assesses for the first time SiGe HBT reliability at cryogenic temperatures (Chapter VI, also published in [62]).
Book Synopsis Radiation Effects in III-V Semiconductors and Heterojunction Bipolar Transistors by : Alexei Shatalov
Download or read book Radiation Effects in III-V Semiconductors and Heterojunction Bipolar Transistors written by Alexei Shatalov and published by . This book was released on 2000 with total page 542 pages. Available in PDF, EPUB and Kindle. Book excerpt: The electron, gamma and neutron radiation degradation of III-V semiconductors and heterojunction bipolar transistors (HBTs) is investigated in this thesis. Particular attention is paid to InP and InGaAs materials and InP/InGaAs abrupt single HBTs (SHBTs). Complete process sequences for fabrication of InP/InGaAs HBTs are developed and subsequently employed to produce the devices, which are then electrically characterized and irradiated with the different types of radiation. A comprehensive analytical HBT model is developed and radiation damage calculations are performed to model the observed radiation-induced degradation of SHBTs. The most pronounced radiation effects found in SHBTs include reduction of the common-emitter DC current gain, shift of the collector-emitter (CE) offset voltage and increase of the emitter, base and collector parasitic resistances. Quantitative analysis performed using the developed model demonstrates that increase of the neutral bulk and base-emitter (BE) space charge region (SCR) components of the base current are responsible for the observed current gain degradation. The rise of the neutral bulk recombination is attributed to decrease in a Shockley-Read-Hall (SRH) carrier lifetime, while the SCR current increase is caused by rising SCR SRH recombination and activation of a tunneling-recombination mechanism. On the material level these effects are explained by displacement defects produced in a semiconductor by the incident radiation. The second primary change of the SHBT characteristics, CE offset voltage shift, is induced by degradation of the base-collector (BC) junction. The observed rise of the BC current is brought on by diffusion and recombination currents which increase as more defects are introduced in a semiconductor. Finally, the resistance degradation is attributed to deterioration of low-doped layers of a transistor, and to degradation of the device metal contacts.
Book Synopsis Operation of Silicon-germanium Heterojunction Bipolar Transistors on by : Marco Bellini
Download or read book Operation of Silicon-germanium Heterojunction Bipolar Transistors on written by Marco Bellini and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, several SiGe HBT devices fabricated on CMOS-compatible silicon on insulator (SOI) substrates (SiGe HBTs-on-SOI) have been demonstrated, combining the well-known SiGe HBT performance with the advantages of SOI substrates. These new devices are especially interesting in the context of extreme environments - highly challenging surroundings that lie outside commercial and even military electronics specifications. However, fabricating HBTs on SOI substrates instead of traditional silicon bulk substrates requires extensive modifications to the structure of the transistors and results in significant trade-offs. The present work investigates, with measurements and TCAD simulations, the performance and reliability of SiGe heterojunction bipolar transistors fabricated on silicon on insulator substrates with respect to operation in extreme environments such as at extremely low or extremely high temperatures or in the presence of radiation (both in terms of total ionizing dose and single effect upset).
Book Synopsis Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices by : Ronald D Schrimpf
Download or read book Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices written by Ronald D Schrimpf and published by World Scientific. This book was released on 2004-07-29 with total page 349 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.
Book Synopsis Radiation and Strain Effects in Silicon-germanium Bipolar Complementary Metal Oxide Semiconductor Technology by : Becca Mary Haugerud
Download or read book Radiation and Strain Effects in Silicon-germanium Bipolar Complementary Metal Oxide Semiconductor Technology written by Becca Mary Haugerud and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This work examines the effects of radiation and strain on silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology. First, aspects of the various SiGe HBT BiCMOS technologies and the device physics of the SiGe HBT are discussed. The performance advantages of the SiGe HBT over the Si BJT are also presented. Chapter II offers a basic introduction to key radiation concepts. The space radiation environment as well as the two common radiation damage mechanisms are described. An overview of the effects of radiation damage on Si-based semiconductor devices, namely bipolar and CMOS, is also presented. Next, the effects of proton and gamma radiation on a new first-generation SiGe HBT technology are investigated. The results of a differential SiGe HBT LC oscillator subjected to proton irradiation are also presented as a test of circuit-level radiation tolerance. Finally, a technology comparison is made between the results of this work and the three different previously reported SiGe technologies. All reported SiGe HBT technologies to date show acceptable proton radiation tolerance up to Mrad levels. Chapter IV investigates the effects of effects of mechanical planar biaxial strain in SiGe HBT BiCMOS technology. This novel strain method is applied post fabrication, unlike many other straining methods. We report increases in the nFET saturated drain current, transconductance, and effective mobility for an applied strain of 0.123%. The pFET device performance degrades for this type of low-level strain.
Book Synopsis The Theory and Application of Bipolar Transistors as Displacement Damage Sensors by : Andrew Michael Tonigan
Download or read book The Theory and Application of Bipolar Transistors as Displacement Damage Sensors written by Andrew Michael Tonigan and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems: Technology, Modeling and Circuit Applications by : Niccolò Rinaldi
Download or read book Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems: Technology, Modeling and Circuit Applications written by Niccolò Rinaldi and published by River Publishers. This book was released on 2018-03-15 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becoming an ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000's. Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration. Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Book Synopsis Effects of Displacement Damage on Photocurrent in Silicon Bipolar Junction Transistors by :
Download or read book Effects of Displacement Damage on Photocurrent in Silicon Bipolar Junction Transistors written by and published by . This book was released on 2009 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Single Ion Displacement Effects in Heterojunction Bipolar Transistors by :
Download or read book Single Ion Displacement Effects in Heterojunction Bipolar Transistors written by and published by . This book was released on 2015 with total page 18 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Radiation Effects in GaAs Heterojunction Bipolar Transistors and Silicon MOS Capacitors by : Mohamed H. Yaktieen
Download or read book Radiation Effects in GaAs Heterojunction Bipolar Transistors and Silicon MOS Capacitors written by Mohamed H. Yaktieen and published by . This book was released on 1989 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
