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Development Of High Speed Type Ii Gaassb Inp Double Heterojunction Bipolar Transistors
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Book Synopsis Development of High-speed, Type-II, GaAsSb/InP, Double-heterojunction Bipolar Transistors by : Benjamin Chu-Kung
Download or read book Development of High-speed, Type-II, GaAsSb/InP, Double-heterojunction Bipolar Transistors written by Benjamin Chu-Kung and published by . This book was released on 1972 with total page 56 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Development and Optimization of High-Speed InP/GaAsSb Double Heterojunction Bipolar Transistors by : Maria Alexandrova
Download or read book Development and Optimization of High-Speed InP/GaAsSb Double Heterojunction Bipolar Transistors written by Maria Alexandrova and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Development of High-Speed InP/GaAsSb Double Heterojunction Bipolar Transistor and Their Application in Monolithic Microwave Integrated Circuits by : Wei Quan
Download or read book Development of High-Speed InP/GaAsSb Double Heterojunction Bipolar Transistor and Their Application in Monolithic Microwave Integrated Circuits written by Wei Quan and published by . This book was released on 2020 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design, Fabrication and Characterization of Ultra High Speed InP/GaAsSb/InP Double Heterojunction Bipolar Transistors by : Martin W. Dvorak
Download or read book Design, Fabrication and Characterization of Ultra High Speed InP/GaAsSb/InP Double Heterojunction Bipolar Transistors written by Martin W. Dvorak and published by . This book was released on 2001 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization, Simulation and Optimization of Type-II GaAsSb-based Double Heterojunction Bipolar Transistors by : Nick Gengming Tao
Download or read book Characterization, Simulation and Optimization of Type-II GaAsSb-based Double Heterojunction Bipolar Transistors written by Nick Gengming Tao and published by . This book was released on 2006 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, GaAsSb/InP double heterojunction bipolar transistors (DHBTs) have been demonstrated to be promising alternatives to InP/InGaAs HBTs, for next generation microwave/millimeter wave applications and optoelectronic integrated circuits (OEICs). However, GaAsSb-based DHBTs featuring the novel base material and type-II band alignment have not been well studied. This thesis investigated type-II GaAsSb DHBTs in the following aspects: periphery surface recombination current, Kirk effect, two dimensional (2D) simulation and device optimization. The present work provided insights into device operation, and guidances for further device development. A series of physical models and parameters was implemented in 2D device simulations using ISE TCAD. Band gap narrowing (BGN) in the bases was characterized by comparing experimental and simulated results. Excellent agreements between the measured and simulated DC and RF results were achieved. Emitter size effects associated with the surface recombination current were experimentally characterized for emitter sizes of 0.5 by 6 to 80 by 80 square micrometer. The 2D simulations by implementing surface state models revealed the mechanism for the surface recombination current. Two device structures were proposed to diminish surface recombination current. Numerical simulations for type-II GaAsSb-InP base-collector (BC) junctions showed that conventional base "push-out" does not occur at high injection levels, and instead the electric field at the BC junction is reversed and an electron barrier at the base side evolves. The electron barrier was found to play an important role in the Kirk effect, and the electron tunnelling through the barrier delays the onset of the Kirk effect. This novel mechanism was supported by the measurement for GaAsSb/InP DHBTs with two base doping levels. The study also showed that the magnitude of the electric field at the BC junction at zero collector current directly affects onset of the Kirk effect. Finally, optimizations for the emitter, base and collector were carried out through 2D simulations. A thin InAlAs emitter, an (Al)GaAsSb compositionally graded base with band gap variance of 0.1eV, and a high n-type delta doping in the collector were proposed to simultaneously achieve high frequency performance, high Kirk current density and high breakdown voltage.
Book Synopsis Sub-micron InP/GaAsSb/InP Double Heterojunction Bipolar Transistors for Ultra High-speed Digital Integrated Circuits by : Urs Hammer
Download or read book Sub-micron InP/GaAsSb/InP Double Heterojunction Bipolar Transistors for Ultra High-speed Digital Integrated Circuits written by Urs Hammer and published by . This book was released on 2010 with total page 265 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Development of Sub-millimeter-wave InP/GaAsSb Double Heterojunction Bipolar Transistors by : Rickard Lövblom
Download or read book Development of Sub-millimeter-wave InP/GaAsSb Double Heterojunction Bipolar Transistors written by Rickard Lövblom and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth of High-performance InP-double Heterojunction Bipolar Transistor (InP-DHBT) for High Speed Circuit Application by : Steven Sontung Bui
Download or read book Growth of High-performance InP-double Heterojunction Bipolar Transistor (InP-DHBT) for High Speed Circuit Application written by Steven Sontung Bui and published by . This book was released on 2002 with total page 128 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Current Trends In Heterojunction Bipolar Transistors by : M F Chang
Download or read book Current Trends In Heterojunction Bipolar Transistors written by M F Chang and published by World Scientific. This book was released on 1996-01-29 with total page 437 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
Book Synopsis InP Based Double Heterojunction Bipolar Transistorwith Carbon Doped GaAsSb:C Base Grown by LP-MOVPE. by :
Download or read book InP Based Double Heterojunction Bipolar Transistorwith Carbon Doped GaAsSb:C Base Grown by LP-MOVPE. written by and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We present the growth of highly carbon doped GaAsSb on InP substrate with LP-MOVPE and nitrogen carrier gas. Carbon doped GaAsSb lattice matched on InP are of pronounced interest for high speed double heterostructure bipolar transistors (DHBTs). We observed a significant effect of the nitrogen carrier gas on the growth behaviour which results in lower distribution coefficients. A linear doping behaviour with small CBr4 flows up to p=4 x 10 19 cm-3 can be observed and first realized DHBT structures shown fT and fmax values of 100 GHz and 60GHz, respectively.
Download or read book InP HBTs written by B. Jalali and published by Artech House Materials Science. This book was released on 1995 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work provides a comprehensive overview of current InP HBT technology and its applications. Each chapter is written by a world-renowned expert on topics including crystal growth, processing, physics, modelling, and digital and analog circuits.
Book Synopsis Design, Simulation and Modelling of InP/GaAsSb/InP Double Heterojunction Bipolar Transistors by :
Download or read book Design, Simulation and Modelling of InP/GaAsSb/InP Double Heterojunction Bipolar Transistors written by and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Device modeling using a two dimensional, drift-diffusion approach utilizing a commercial numerical device simulator has been used to investigate the operation and performance of InP/GaAsSb heterojunction bipolar transistors (HBTs). GaAsSb lattice matched to InP has an energy bandgap (0.72 eV) that is similar to that of InGaAs (0.75eV) so that Sb-based HBTs have been proposed as a replacement for InGaAs-based HBTs. In particular, the conduction band lineup is more favorable at the base-collector, which makes the GaAsSb-based HBTs especially attractive for double heterojunction bipolar transistors (DHBTs) where higher breakdown voltages are desired. In this work, the results of device modeling will be compared initially with recent experimental reports to validate the modeling approach. Then the design and operation of the devices will be examined to investigate the factors controlling device performance in order to facilitate improvements in device design. The degradation of device performance at high currents due to the formation of a parasitic barrier in the collector region and the base push out effects is examined. Finally, a device structure with improved high frequency performance is described.
Book Synopsis InP/GaAsSb/InP Double Heterojunction Bipolar Transistors by : C. R. Bolgnesi
Download or read book InP/GaAsSb/InP Double Heterojunction Bipolar Transistors written by C. R. Bolgnesi and published by . This book was released on 2002 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) are some of the fastest bipolar transistors ever fabricated, with current gain cutoff and maximum oscillation frequencies simultaneously exceeding 300 GHz while maintaining breakdown voltages BV(sub ceo> 6V I. InP/GaAsSb/InP DHBTs are particularly appealing because excellent device figures of merit are achievable with relatively simple structures involving abrupt junctions and uniform doping levels and compositions. This is a tremendous manufacturability advantage and the reason why some organizations have moved aggressively toward GaAsSb DHBT production despite a relative scarcity of information on the physical properties of the GaAsSb alloy in comparison to GalnAs. The present paper reviews some of the key concepts associated with the use of GaAsSb base layers, and discusses the physical operation InP/GaAsSb/InP DHBTs. In particular, we will describe the implications of the staggered band lineup at the E/B and B/C heterojunctions for charge storage in the devices, and show that InP/GaAsSb/InP DHBTs offer inherent advantages from that point of view. We will also show that GaAsSb based DHBTs can be expected to display better scalability than GainAs-based devices because of their inherently superior base Ohmic contacts.
Book Synopsis High-speed InP Heterojunction Bipolar Transistors and Integrated Circuits in Transferred Substrate Technology by : Tomas Krämer
Download or read book High-speed InP Heterojunction Bipolar Transistors and Integrated Circuits in Transferred Substrate Technology written by Tomas Krämer and published by . This book was released on 2010 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis SiGe Heterojunction Bipolar Transistors by : Peter Ashburn
Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
Book Synopsis Sb-Based Double Heterojunction Bipolar Transistors (DHBTs) With Fmax] 650GHz for 340GHz Transmitter by :
Download or read book Sb-Based Double Heterojunction Bipolar Transistors (DHBTs) With Fmax] 650GHz for 340GHz Transmitter written by and published by . This book was released on 2008 with total page 25 pages. Available in PDF, EPUB and Kindle. Book excerpt: The proposed program goals are the development of transistor technology for the sub-millimeter wave (i.e 340GHz) source to be used in a wide range of military and consumer applications using transistors operating toward THz bandwidths. The transistors will be designed, developed and fabricated using a novel material structure employing a type H double heterojonction bipolar transistor (type II DHBT). This structure has a world-record high-speed operation (ft>500 GHz) with higher breakdown voltage and lower junction temperatures than any other competing technology, including lattice matched type I InP/InGaAs I SHBTs, type I DHBTs, and pseodomorphic high-electron mobility transistors (pHEMTs). We propose to accomplish these using Antimonide-based DHBTs for all active components of the power amplifier. This project will be broken up into three stages consisting of a transistor development and fabrication stage, a model development stage, and a power amplifier design stage. In the transistor development and fabrication stage the speed of Sb-DHBTs will be increased to reach the goal of 650/400 GHz (fMAX/fT). Device models (Agilent ADS and UTUC's own SDD2) will be refined to accurately represent the devices high frequency characteristics and enable the design of the power amplifier's components. Finally a power amplifier operating at 340GHz will be designed and simulated to assess power gain, maximum Output power, and power added efficiency.
Book Synopsis A GaAsSb/InP HBT circuit technology by :
Download or read book A GaAsSb/InP HBT circuit technology written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A InP/GaAsSb/InP double-heterojunction bipolar transistor (DHBT) structure has been defined, realized by MBE epitaxy, and optimized, thanks to simulation based on in-depth physical characterizations. A circuit-oriented technology has been developed, which has been validated by the design and fabrication of a full-rate (40 GHz clock) 40 Gbit/s D-FF.
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