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Development Of Gan Based Microwave Power Amplifier For X Band Applications
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Book Synopsis Development of GaN Based Microwave Power Amplifier for X Band Applications by :
Download or read book Development of GaN Based Microwave Power Amplifier for X Band Applications written by and published by . This book was released on 2000 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt: The feasibility of utilizing the GaN/AlGaN material system in the development of high power amplifiers for X-band frequencies and above was investigated. The GaN based heterojunction field effect transistor (HFET) on SiC shows remarkable power density at microwave frequencies. An order of magnitude improvement can be attained in output power when compared with present GaAs devices, judging from the already observed power density along with further anticipated advances of these GaN devices. Four individual HFET devices operating in combination were able to achieve 6 watts (W) output at 9.4 Ghz. The investigation into improving this performance for Phase Ii research is documented.
Book Synopsis Microwave High Power High Efficiency GaN Amplifiers for Communication by : Subhash Chandra Bera
Download or read book Microwave High Power High Efficiency GaN Amplifiers for Communication written by Subhash Chandra Bera and published by Springer Nature. This book was released on 2022-11-29 with total page 263 pages. Available in PDF, EPUB and Kindle. Book excerpt: The textbook discusses design and analysis of microwave high power and high efficiency amplifiers for communications, appropriate for undergraduate, post-graduate students, practical circuit designers and researchers in the field of electronics and communication engineering. This book covers basics of III-V group semiconductor materials and GaAs and GaN based High Electron Mobility Transistors (HEMTs) most suitable for microwave and mm wave power amplifiers required for present wireless communication systems and upcoming 4G and 5G mobile base stations. The book describes design and analysis of classical class of amplifier operations such as Class-A, B, AB, C and F. The coverage extends to advanced classes of amplifier operation such as extended continuous Class-B/Class-J, and extended continuous Class-F operations for broadband, high power and high efficiency performance. Analytical expressions are derived for circuit elements and performance parameters for clear understanding and required for practical design of power amplifiers. Each topic is supplemented with suitable schematic diagrams, analytical expressions and plotted results for clear understanding.
Book Synopsis Materials Physics and Device Development for Improved Efficiency of GaN HEMT High Power Amplifiers by : Steven Ross Kurtz
Download or read book Materials Physics and Device Development for Improved Efficiency of GaN HEMT High Power Amplifiers written by Steven Ross Kurtz and published by . This book was released on 2005 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN-based microwave power amplifiers have been identified as critical components in Sandia's next generation micro-Synthetic-Aperture-Radar (SAR) operating at X-band and Ku-band (10-18 GHz). To miniaturize SAR, GaN-based amplifiers are necessary to replace bulky traveling wave tubes. Specifically, for micro-SAR development, highly reliable GaN high electron mobility transistors (HEMTs), which have delivered a factor of 10 times improvement in power performance compared to GaAs, need to be developed. Despite the great promise of GaN HEMTs, problems associated with nitride materials growth currently limit gain, linearity, power-added-efficiency, reproducibility, and reliability. These material quality issues are primarily due to heteroepitaxial growth of GaN on lattice mismatched substrates. Because SiC provides the best lattice match and thermal conductivity, SiC is currently the substrate of choice for GaN-based microwave amplifiers. Obviously for GaN-based HEMTs to fully realize their tremendous promise, several challenges related to GaN heteroepitaxy on SiC must be solved. For this LDRD, we conducted a concerted effort to resolve materials issues through in-depth research on GaN/AlGaN growth on SiC. Repeatable growth processes were developed which enabled basic studies of these device layers as well as full fabrication of microwave amplifiers. Detailed studies of the GaN and AlGaN growth of SiC were conducted and techniques to measure the structural and electrical properties of the layers were developed. Problems that limit device performance were investigated, including electron traps, dislocations, the quality of semi-insulating GaN, the GaN/AlGaN interface roughness, and surface pinning of the AlGaN gate. Surface charge was reduced by developing silicon nitride passivation. Constant feedback between material properties, physical understanding, and device performance enabled rapid progress which eventually led to the successful fabrication of state of the art HEMT transistors and amplifiers.
Download or read book MMIC Design written by Ian D. Robertson and published by . This book was released on 1995 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book draws together all the important MMIC design methods and circuit topologies into one volume. It is essential reading as both a tutorial guide for those new to MMIC design and as a circuit design handbook for experienced designers. The contributors are acknowledged experts from industry and academia. The first four chapters describe the active and passive components, processing technology and CAD techniques. The design of the circuits is then covered in individual chapters treating amplifiers, mixers, phase shifters, switches and attenuators, and oscillators. The final three chapters describe silicon millimetre-wave circuits, measurement techniques and advanced circuit concepts.
Book Synopsis AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications by : Jutta Kühn
Download or read book AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications written by Jutta Kühn and published by KIT Scientific Publishing. This book was released on 2011 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.
Book Synopsis Distributed Power Amplifiers for RF and Microwave Communications by : Narendra Kumar
Download or read book Distributed Power Amplifiers for RF and Microwave Communications written by Narendra Kumar and published by Artech House. This book was released on 2015-06-01 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: This new resource presents readers with all relevant information and comprehensive design methodology of wideband amplifiers. This book specifically focuses on distributed amplifiers and their main components, and presents numerous RF and microwave applications including well-known historical and recent architectures, theoretical approaches, circuit simulation, and practical implementation techniques. A great resource for practicing designers and engineers, this book contains numerous well-known and novel practical circuits, architectures, and theoretical approaches with detailed description of their operational principles.
Book Synopsis Gallium Nitride (GaN) by : Farid Medjdoub
Download or read book Gallium Nitride (GaN) written by Farid Medjdoub and published by CRC Press. This book was released on 2017-12-19 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
Book Synopsis Large Signal Modeling of GaN Device for High Power Amplifier Design by : Anwar Hasan Jarndal
Download or read book Large Signal Modeling of GaN Device for High Power Amplifier Design written by Anwar Hasan Jarndal and published by kassel university press GmbH. This book was released on 2006 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Handbook of Microwave and Radar Engineering by : Anatoly Belous
Download or read book Handbook of Microwave and Radar Engineering written by Anatoly Belous and published by Springer Nature. This book was released on 2021-01-04 with total page 992 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive handbook provides readers with a single-source reference to the theoretical fundamentals, physical mechanisms and principles of operation of all known microwave devices and various radars. The author discusses proven methods of computation and design development, process, schematic, schematic-technical and construction peculiarities of each breed of the microwave devices, as well as the most popular and original technical solutions for radars. Coverage also includes the history of creation of the most widely used radars, as well as guidelines for their potential upgrading. Offers readers a comprehensive, systematized view of all contemporary knowledge, acquired during the last 20 years, on radars and related disciplines; Provides a single-source reference on the physical mechanisms and principles of operation of the basic components of radio location devices, including theoretical aspects of designing the necessary, high-efficiency electronic devices and systems, as well as key, practical methods of computation and design; Presents complex topics using simple language, minimizing mathematics.
Book Synopsis Wideband GaN Microwave Power Amplifiers with Class-G Supply Modulation by : Nikolai Wolff
Download or read book Wideband GaN Microwave Power Amplifiers with Class-G Supply Modulation written by Nikolai Wolff and published by Cuvillier Verlag. This book was released on 2019-02-06 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt: The continuous and rapidly growing demand for mobile communication access led to a major increase in the number of base stations worldwide to provide sufficient coverage and quality of service. As a consequence, mobile communication networks have become a significant contributor to global energy consumption. Several advanced topologies for efficiency improvement of RF power amplifiers have been developed. Modulating the amplifier’s supply voltage according to the variation of the envelope signal is one of the most promising concepts. This topology is investigated here, with an architecture that switches the supply voltage of the power amplifier in discrete levels with a class-G supply modulator. The thesis addresses comprehensively all aspects of class-G supply modulation. Several prototype designs were realized to validate the theory and to gain experience on the influence of the corresponding parameters. These include the discrete supply voltage levels, the switching thresholds, and the interface between the RF PA and the class-G supply modulator. Efforts both on improving the RF power amplifiers and developing several class-G supply modulators were also involved. This work covers the progress up to a PA module that provides an instantaneous modulation bandwidth of 120 MHz and achieves better performance than state-of-the art continuous supply modulation systems. Class-G supply modulated RF power amplifiers based on gallium nitride technology exhibit a strong nonlinear behavior, therefore linearization is required. For this purpose, the linearization with digital predistortion based on behavioral models is optimized for the class-G topology and a novel predistorter model is developed and analyzed.
Book Synopsis Wideband GaN Microwave Power Amplifiers with Class-G Supply Modulation (Band 48 by : Nikolai Wolff
Download or read book Wideband GaN Microwave Power Amplifiers with Class-G Supply Modulation (Band 48 written by Nikolai Wolff and published by FBI / Ferdinand Braun Institut. This book was released on 2019 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The continuous and rapidly growing demand for mobile communication access led to a major increase in the number of base stations worldwide to provide sufficient coverage and quality of service. As a consequence, mobile communication networks have become a significant contributor to global energy consumption. Several advanced topologies for efficiency improvement of RF power amplifiers have been developed. Modulating the amplifier's supply voltage according to the variation of the envelope signal is one of the most promising concepts. This topology is investigated here, with an architecture that switches the supply voltage of the power amplifier in discrete levels with a class-G supply modulator. The thesis addresses comprehensively all aspects of class-G supply modulation. Several prototype designs were realized to validate the theory and to gain experience on the influence of the corresponding parameters. These include the discrete supply voltage levels, the switching thresholds, and the interface between the RF PA and the class-G supply modulator. Efforts both on improving the RF power amplifiers and developing several class-G supply modulators were also involved. This work covers the progress up to a PA module that provides an instantaneous modulation bandwidth of 120 MHz and achieves better performance than state-of-the art continuous supply modulation systems. Class-G supply modulated RF power amplifiers based on gallium nitride technology exhibit a strong nonlinear behavior, therefore linearization is required. For this purpose, the linearization with digital predistortion based on behavioral models is optimized for the class-G topology and a novel predistorter model is developed and analyzed.
Book Synopsis Handbook for III-V High Electron Mobility Transistor Technologies by : D. Nirmal
Download or read book Handbook for III-V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Book Synopsis Millimeter-Wave GaN Power Amplifier Design by : Edmar Camargo
Download or read book Millimeter-Wave GaN Power Amplifier Design written by Edmar Camargo and published by Artech House. This book was released on 2022-05-31 with total page 339 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives you – in one comprehensive and practical resource -- everything you need to successfully design modern and sophisticated power amplifiers at mmWave frequencies. The book provides an in-depth treatment of the design methodology for MMIC power amplifiers, then brings you step by step through the various phases of design, from the selection of technology and preliminary architecture considerations, to the effective design of the matching circuits and conversion of electrical-to-electromagnetic models. Detailed figures and numerous practical applications are included to help you gain valuable insights into these technologies and learn to identify the best path to a successful design. You’ll be guided through a range of new mmWave power applications that show particular promise to support new 5G systems, while mastering the use of GaN technology that continues to dominate the power mmWave applications due to its high power, gain, and efficiency. This is a valuable resource for power amplifier design engineers, technicians, industry R&D staff, and anyone getting into the area of power MMICs who wants to learn how to design at mmWave frequencies.
Book Synopsis Gallium Nitride -based Microwave Power Varactors for Wireless Base Station Applications by : Wei Lu
Download or read book Gallium Nitride -based Microwave Power Varactors for Wireless Base Station Applications written by Wei Lu and published by . This book was released on 2013 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt: With the development of wireless communication systems, the demand for providing tunability in the wireless communication circuits becomes more and more intense. Among the technologies, semiconductor varactor is the critical component that is capable of implementing tunable and adaptive characteristics, particularly for the frond-end components of the wireless communication systems. For base station applications, high voltage handling capability, typically of 100 V or greater, high quality factor (Q), typically of above 100 at operation frequency, and high linearity, OIP3> 65 dBm, are required. This work will mainly discuss in detail the design, fabrication and characterization to achieve the high-voltage high-Q and high-linearity microwave power varactors for wireless base station applications. Some preliminary varactor applications in the test tunable circuits will be demonstrated too. In this dissertation, we first introduce the physics of the semiconductor varactors and the motivation for choosing GaN as the candidate material for this microwave power varactor. Then we elucidate the critical design considerations for achieving high breakdown voltage, high quality factor and high linearity. The novel Schottky barrier engineered design using a thin InGaN surface layer on top of GaN to enhance the breakdown voltage of GaN-based Schottky diodes is therefore introduced. We then show the theoretical and experimental studies on the suppression mechanisms for electron tunneling in the InGaN/GaN Schottky barriers. The detailed material characterization for the InGaN/GaN material system and its application for the enhancement-mode HEMTs are also presented. Next, we discuss the initial device fabrication procedure and the improving methods based on the initial DC and RF measurement results. Thereafter, we report the detailed characterizations of the fabricated devices including the high-voltage I-V and C-V, S-parameters for 1-port and 2-port devices, linearity and application in the tunable resonant circuits. Finally, we summarize the dissertation and outline the future work. In this work, we achieved a high-performance GaN-based microwave power varactors with breakdown voltage> 100 V, quality factor> 100 and OIP3> 71 dBm. It meets the initial goal of this project as well as the specifications in some practical applications. To the best of our knowledge, this combination of breakdown voltage, Q and OIP3 represents remarkable advancement from any other reported varactors.
Book Synopsis Solid-state Microwave High-power Amplifiers by : Franco Sechi
Download or read book Solid-state Microwave High-power Amplifiers written by Franco Sechi and published by Artech House. This book was released on 2009 with total page 333 pages. Available in PDF, EPUB and Kindle. Book excerpt: This practical resource offers expert guidance on the most critical aspects of microwave power amplifier design. This comprehensive book provides descriptions of all the major active devices, discusses large signal characterization, explains all the key circuit design procedures. Moreover you gain keen insight on the link between design parameters and technological implementation, helping you achieve optimal solutions with the most efficient utilization of available technologies. The book covers a broad range of essential topics, from requirements for high-power amplifiers, device models, phase noise and power combiners... to high-efficiency amplifiers, linear amplifier design, bias circuits, and thermal design.
Book Synopsis Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO) by :
Download or read book Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO) written by and published by . This book was released on 1999 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Large-signal Modeling of GaN HEMTs for Linear Power Amplifier Design by : Endalkachew Shewarega Mengistu
Download or read book Large-signal Modeling of GaN HEMTs for Linear Power Amplifier Design written by Endalkachew Shewarega Mengistu and published by kassel university press GmbH. This book was released on 2008 with total page 153 pages. Available in PDF, EPUB and Kindle. Book excerpt:
