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Development Of Alternative Diffusion Barriers For Advanced Copper Interconnects
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Book Synopsis Development of Alternative Diffusion Barriers for Advanced Copper Interconnects by : Lii-Cherng Leu
Download or read book Development of Alternative Diffusion Barriers for Advanced Copper Interconnects written by Lii-Cherng Leu and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: As the failure temperature for 5 nm iridium barrier was 400 °C, the addition of TaN layer strongly improved the barrier performance. The utilization of Pd as a catalyst for Cu electroless deposition along with TaN to form a bilayer barrier was also investigated. The Pd/TaN bilayer structure was shown to prevent copper diffusion up to 550 °C for 1 h. Ternary refractory metal nitride W-B-N thin films were also studied as a candidate diffusion barrier for Cu metallization on Si. W-B-N thin films were amorphous with low resistivity ranging from 159.92 to 240.4 [mu][Omega]cm. The W-B-N thin films deposited at 5 % N2 flow ratio can block Cu diffusion after 500 °C annealing for 1 h. As one of the interesting refractory metal nitrides for Cu diffusion barrier application, the comparative study between ZrN and Zr-Ge-N thin films as diffusion barriers was also examined.
Book Synopsis Advanced Ta-based Diffusion Barriers for Cu Interconnects by : René Hübner
Download or read book Advanced Ta-based Diffusion Barriers for Cu Interconnects written by René Hübner and published by . This book was released on 2009 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last few years, copper has become the standard metallisation material for on-chip interconnects in high-performance microprocessors. Compared to the previously used aluminium, copper shows not only a lower resistivity, but also significantly improved electromigration resistance. Copper ions, however, are very mobile in silicon and many dielectric materials under electrical and thermal bias. Thus, barrier layers are needed to prevent Cu diffusion into the insulating layers surrounding the metallic interconnects. Since Ta-based compounds are characterized by a high thermal stability, pure Ta films or layer stacks consisting of Ta and TaN are used for such barriers. The continuous scaling down of the interconnect dimensions and, therefore, the essential decrease in the barrier layer thickness coupled with the replacement of silicon oxide by advanced low-k dielectrics demand further improvements of the diffusion barrier performance. It is the aim of this book to carry out microstructure and functional property investigations for advanced, high-performance Tabased diffusion barriers (Ta-TaN layer stacks and Ta-Si-N single layers) before and after annealing to compare their thermal stabilities and to probe the corresponding failure mechanisms. For the Ta-TaN barriers, these studies are undertaken for a range of layer sequences, while for the Ta-Si-N barriers a variety of films with different chemical compositions are analysed.
Book Synopsis Copper Interconnect Technology by : Christoph Steinbruchel
Download or read book Copper Interconnect Technology written by Christoph Steinbruchel and published by SPIE Press. This book was released on 2001 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt: A textbook designed to accompany The Society of Photo-Optical Instrumentation Engineers' short course on improving interconnect performance for increased speed in overall circuit performance authored by Steinbrnchel (materials science and engineering, Renselaer Polytechnic Institute) and Chin (senio
Book Synopsis Investigation of Self-assembled Monolayers as Diffusion Barriers for Copper Interconnect Technology by : Kaushik Chanda
Download or read book Investigation of Self-assembled Monolayers as Diffusion Barriers for Copper Interconnect Technology written by Kaushik Chanda and published by . This book was released on 2001 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advanced Interconnects for ULSI Technology by : Mikhail Baklanov
Download or read book Advanced Interconnects for ULSI Technology written by Mikhail Baklanov and published by John Wiley & Sons. This book was released on 2012-02-17 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.
Download or read book Metallization written by S. P. Murarka and published by Butterworth-Heinemann. This book was released on 1993 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt: This title covers fundemental concepts, properties and applicabilities of metals and alloys for use in various metallization schemes. Metallizations form the key components on electronic circuits - controlling device properties and providing power and device interconnections with the outside world or with other devices. The recent advent of submicron dimensions and increasingly faster devices in the semiconductor have challenged researchers to keep metallization schemes in line with new demanding requirements.
Book Synopsis Processing Materials of 3D Interconnects, Damascene, and Electronics Packaging 6 by : K. Kondo
Download or read book Processing Materials of 3D Interconnects, Damascene, and Electronics Packaging 6 written by K. Kondo and published by The Electrochemical Society. This book was released on 2015-04-30 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Low Temperature Thermal CVD TiSiN Diffusion Barrier Films for Copper Interconnect Applications by : Dalaver H. Anjum
Download or read book Low Temperature Thermal CVD TiSiN Diffusion Barrier Films for Copper Interconnect Applications written by Dalaver H. Anjum and published by . This book was released on 2002 with total page 135 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications by : Yosi Shacham-Diamand
Download or read book Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications written by Yosi Shacham-Diamand and published by Springer Science & Business Media. This book was released on 2009-09-19 with total page 545 pages. Available in PDF, EPUB and Kindle. Book excerpt: In Advanced ULSI interconnects – fundamentals and applications we bring a comprehensive description of copper-based interconnect technology for ultra-lar- scale integration (ULSI) technology for integrated circuit (IC) application. In- grated circuit technology is the base for all modern electronics systems. You can ?nd electronics systems today everywhere: from toys and home appliances to a- planes and space shuttles. Electronics systems form the hardware that together with software are the bases of the modern information society. The rapid growth and vast exploitation of modern electronics system create a strong demand for new and improved electronic circuits as demonstrated by the amazing progress in the ?eld of ULSI technology. This progress is well described by the famous “Moore’s law” which states, in its most general form, that all the metrics that describe integrated circuit performance (e. g. , speed, number of devices, chip area) improve expon- tially as a function of time. For example, the number of components per chip d- bles every 18 months and the critical dimension on a chip has shrunk by 50% every 2 years on average in the last 30 years. This rapid growth in integrated circuits te- nology results in highly complex integrated circuits with an increasing number of interconnects on chips and between the chip and its package. The complexity of the interconnect network on chips involves an increasing number of metal lines per interconnect level, more interconnect levels, and at the same time a reduction in the interconnect line critical dimensions.
Book Synopsis Fundamentals of Electromigration-Aware Integrated Circuit Design by : Jens Lienig
Download or read book Fundamentals of Electromigration-Aware Integrated Circuit Design written by Jens Lienig and published by Springer. This book was released on 2018-02-23 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book provides a comprehensive overview of electromigration and its effects on the reliability of electronic circuits. It introduces the physical process of electromigration, which gives the reader the requisite understanding and knowledge for adopting appropriate counter measures. A comprehensive set of options is presented for modifying the present IC design methodology to prevent electromigration. Finally, the authors show how specific effects can be exploited in present and future technologies to reduce electromigration’s negative impact on circuit reliability.
Book Synopsis Advanced Wirebond Interconnection Technology by : Shankara K. Prasad
Download or read book Advanced Wirebond Interconnection Technology written by Shankara K. Prasad and published by Springer Science & Business Media. This book was released on 2006-05-10 with total page 694 pages. Available in PDF, EPUB and Kindle. Book excerpt: From the reviews: "This book is intended for an assembly production house setting, appropriate for management, designers, chief operators, as well as wirebond production engineers. Operational issues such as specifying and optimizing wire and automatic bonders for a product line are included. The book is very good with "visual" explanations for quick grasping of the issues. In addition, the fundamental metallurgical or mechanical root causes behind material and process choices are presented. The book has a clear prose style and a very readable font and page layout. The figures, although effective, are simply low resolution screen prints from a personal computer and thus have aliasing and fuzziness. This book has excellent overall tutorial and enough description of wire and bonding equipment so the reader could specify and negotiate correctly for with suppliers. The majority of the book dwells on establishing the bonding process for a particular product; determining the "window" of adjustments. The book ends with discussions on establishing quality metrics and reliability assurance tests. Each chapter of the book includes enough tutorial information to allow it to alone with little need to page backwards. A short but good reference section is at the end. If you have not read a wirebonding book, or the one you read 10 years ago was borrowed and never returned, now is the time to buy this book." ( CMPT Newsletter, June 2005)
Book Synopsis Transition Metal Carbides and Nitrides by : Louis Toth
Download or read book Transition Metal Carbides and Nitrides written by Louis Toth and published by Elsevier. This book was released on 2014-04-11 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt: Refractory Materials, Volume 7: Transition Metal Carbides and Nitrides discusses the developments in transition metal carbide and nitride research. This volume is organized into nine chapters that emphasize the mechanical and superconducting properties of these compounds. The introductory chapters deal with the general properties, preparation techniques, characterization, crystal chemistry, phase relationships, and thermodynamics of transition metal carbides and nitrides. The following chapter highlights the mechanical properties of these compounds, such as elastic and plastic deformation, fracture, strengthening mechanisms, and hardness. The discussion then shifts to specific electrical and magnetic properties, including electrical resistivity, Hall coefficient, and magnetic susceptibility. A separate chapter is devoted to carbides and nitrides as superconductors. The concluding chapters explore certain theories that explain the mechanisms of band structure and bonding in carbides and nitrides. This volume is of great value to research workers in metallurgy, ceramics, physics, chemistry, and related fields, as well as to advanced students investigating problems concerning high temperature materials or interstitial compounds.
Book Synopsis Dielectric Films for Advanced Microelectronics by : Mikhail Baklanov
Download or read book Dielectric Films for Advanced Microelectronics written by Mikhail Baklanov and published by John Wiley & Sons. This book was released on 2007-04-04 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are a few examples of the miniaturized device technologies that depend on the utilization of thin film materials. This book presents an in-depth overview of the novel developments made by the scientific leaders in the area of modern dielectric films for advanced microelectronic applications. It contains clear, concise explanations of material science of dielectric films and their problem for device operation, including high-k, low-k, medium-k dielectric films and also specific features and requirements for dielectric films used in the packaging technology. A broad range of related topics are covered, from physical principles to design, fabrication, characterization, and applications of novel dielectric films.
Book Synopsis Materials for Information Technology by : Ehrenfried Zschech
Download or read book Materials for Information Technology written by Ehrenfried Zschech and published by Springer Science & Business Media. This book was released on 2006-07-02 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an up to date survey of the state of the art of research into the materials used in information technology, and will be bought by researchers in universities, institutions as well as research workers in the semiconductor and IT industries.
Book Synopsis Materials for Advanced Packaging by : Daniel Lu
Download or read book Materials for Advanced Packaging written by Daniel Lu and published by Springer. This book was released on 2016-11-18 with total page 974 pages. Available in PDF, EPUB and Kindle. Book excerpt: Significant progress has been made in advanced packaging in recent years. Several new packaging techniques have been developed and new packaging materials have been introduced. This book provides a comprehensive overview of the recent developments in this industry, particularly in the areas of microelectronics, optoelectronics, digital health, and bio-medical applications. The book discusses established techniques, as well as emerging technologies, in order to provide readers with the most up-to-date developments in advanced packaging.
Book Synopsis Optical Interconnects by : Lorenzo Pavesi
Download or read book Optical Interconnects written by Lorenzo Pavesi and published by Springer. This book was released on 2007-05-17 with total page 397 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optical Interconnects provides a fascinating picture of the state of the art in optical interconnects and a perspective on what can be expected in the near future. It is composed of selected reviews authored by world leaders in the field, and these reviews are written from either an academic or industrial viewpoint. An in-depth discussion of the path towards fully-integrated optical interconnects in microelectronics is presented. This book will be useful not only to physicists, chemists, materials scientists, and engineers but also to graduate students who are interested in the fields of microelectronics and optoelectronics.
Book Synopsis Noble and Precious Metals by : Mohindar Seehra
Download or read book Noble and Precious Metals written by Mohindar Seehra and published by BoD – Books on Demand. This book was released on 2018-07-04 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: The use of copper, silver, gold and platinum in jewelry as a measure of wealth is well known. This book contains 19 chapters written by international authors on other uses and applications of noble and precious metals (copper, silver, gold, platinum, palladium, iridium, osmium, rhodium, ruthenium, and rhenium). The topics covered include surface-enhanced Raman scattering, quantum dots, synthesis and properties of nanostructures, and its applications in the diverse fields such as high-tech engineering, nanotechnology, catalysis, and biomedical applications. The basis for these applications is their high-free electron concentrations combined with high-temperature stability and corrosion resistance and methods developed for synthesizing nanostructures. Recent developments in all these areas with up-to-date references are emphasized.
