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Author : Xueqing Li
Publisher :
ISBN 13 :
Total Pages : 334 pages
Book Rating : 4.:/5 (617 download)
Download or read book Design and Simulation of High Voltage 4H Silicon Carbide Power Devices written by Xueqing Li and published by . This book was released on 2005 with total page 334 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : B Jayant Baliga
Publisher : World Scientific
ISBN 13 : 9814478946
Total Pages : 526 pages
Book Rating : 4.8/5 (144 download)
Download or read book Silicon Carbide Power Devices written by B Jayant Baliga and published by World Scientific. This book was released on 2006-01-05 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices.
Author : Carl-Mikael Zetterling
Publisher : IET
ISBN 13 : 9780852969984
Total Pages : 202 pages
Book Rating : 4.9/5 (699 download)
Download or read book Process Technology for Silicon Carbide Devices written by Carl-Mikael Zetterling and published by IET. This book was released on 2002 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explains why SiC is so useful in electronics, gives clear guidance on the various processing steps (growth, doping, etching, contact formation, dielectrics etc) and describes how these are integrated in device manufacture.
Author : Sergey Rumyantsev
Publisher : World Scientific
ISBN 13 : 981447777X
Total Pages : 342 pages
Book Rating : 4.8/5 (144 download)
Download or read book Sic Materials And Devices - Volume 1 written by Sergey Rumyantsev and published by World Scientific. This book was released on 2006-07-25 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Author : Tsunenobu Kimoto
Publisher : John Wiley & Sons
ISBN 13 : 1118313550
Total Pages : 565 pages
Book Rating : 4.1/5 (183 download)
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Author : Peter Friedrichs
Publisher : John Wiley & Sons
ISBN 13 : 9783527629084
Total Pages : 520 pages
Book Rating : 4.6/5 (29 download)
Download or read book Silicon Carbide, Volume 2 written by Peter Friedrichs and published by John Wiley & Sons. This book was released on 2011-04-08 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.
Author : George Gibbs
Publisher :
ISBN 13 : 9781681176437
Total Pages : 284 pages
Book Rating : 4.1/5 (764 download)
Download or read book Physics and Technology of Silicon Carbide Devices written by George Gibbs and published by . This book was released on 2016-10-01 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.
Author : Woongje Sung
Publisher :
ISBN 13 :
Total Pages : 177 pages
Book Rating : 4.:/5 (792 download)
Download or read book Design and Fabrication of 4H-SiC High Voltage Devices written by Woongje Sung and published by . This book was released on 2011 with total page 177 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design, Characterization, Modeling and Analysis of High Voltage Silicon Carbide Power Devices written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This research focuses on the design, characterization, modeling and analysis of high voltage Silicon Carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFET), insulated gate bipolar transistors (IGBT) and emitter turn-off thyristors (ETO) to satisfy the stringent requirements of advanced power electronic systems. The loss information, frequency capability and switching ruggedness of these 10-kV SiC power devices are studied extensively in order to provide their application prospects in solid-state transformers (SST). Among 10-kV SiC power devices, SiC MOSFETs are of the greatest interest due to their lower specific on-resistance compared to silicon MOSFETs, and their inherently fast switching speed due to their majority carrier conduction mechanism. Therefore, 10-kV SiC MOSFETs are studied first in this dissertation. The characterization, modeling and analysis of 10-kV SiC MOSFETs were investigated extensively. The low losses and high switching frequency of 10-kV SiC MOSFETs were demonstrated in characterization study and a 4-kV 4 kW boost converter. The on-resistance of SiC MOSFETs increases rapidly with increased junction temperature and blocking voltage. This makes their conduction losses possibly unacceptable for applications where high DC supply voltages (more than 10-kV) and high temperature operation are used. This warrants the development of SiC bipolar devices (IGBTs and thyristors) to achieve smaller conduction losses due to the conductivity modulation of their thick drift layers, especially at elevated temperatures. Therefore, design, characterization and optimization of 10-kV SiC IGBT and ETO were dicussed. A 4H-SiC p-channel IGBT with improved conduction characteristics was developed and characterized experimentally as well as analyzed theoretically by numerical simulations. The device exhibited a differential on-resistance of 26 mOhm.cm^2 at a collector current density of 100 A/cm^2 at room temperature. An the SiC IGBT showed a turn-of.
Author : Konstantinos Zekentes
Publisher : Materials Research Forum LLC
ISBN 13 : 1945291842
Total Pages : 250 pages
Book Rating : 4.9/5 (452 download)
Download or read book Advancing Silicon Carbide Electronics Technology I written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2018-09-25 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.
Author : Lei Lin
Publisher :
ISBN 13 :
Total Pages : 106 pages
Book Rating : 4.:/5 (87 download)
Download or read book Design and Fabrication of 4H Silicon Carbide Gate Turn-off Thyristors written by Lei Lin and published by . This book was released on 2013 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Pushpakaran Bejoy N
Publisher : World Scientific
ISBN 13 : 9813237848
Total Pages : 464 pages
Book Rating : 4.8/5 (132 download)
Download or read book Modeling And Electrothermal Simulation Of Sic Power Devices: Using Silvaco© Atlas written by Pushpakaran Bejoy N and published by World Scientific. This book was released on 2019-03-25 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco© ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco© ATLAS to simulate SiC power device structure, as well as supplementary material for download.
Author : Yue Fu
Publisher : CRC Press
ISBN 13 : 9781138071858
Total Pages : 0 pages
Book Rating : 4.0/5 (718 download)
Download or read book Integrated Power Devices and TCAD Simulation written by Yue Fu and published by CRC Press. This book was released on 2017-03-29 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: From power electronics to power integrated circuits, smart power technologies to GaN power HEMTs, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. Instead of abstract theories and daunting equations, the text uses TCAD simulations to explain the design of integrated power devices. The book not only describes the physics inside devices such as LDMOSFETs, LIGBTs, and super junction LDMOSFETs but also delivers a simple introduction to power management systems essential to engineers and students.
Author : B Jayant Baliga
Publisher :
ISBN 13 : 9789811284274
Total Pages : 0 pages
Book Rating : 4.2/5 (842 download)
Download or read book Modern Silicon Carbide Power Devices written by B Jayant Baliga and published by . This book was released on 2023-09-18 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide power devices are being increasingly adopted for many applications such as electric vehicles and charging stations. There is a large demand for a resource to learn and understand the basic physics of operation of these devices to create engineers with in depth knowledge about them.This unique compendium provides a comprehensive design guide for Silicon Carbide power devices. It systematically describes the device structures and analytical models for computing their characteristics. The device structures included are the Schottky diode, JBS rectifier, power MOSFET, JBSFET, IGBT and BiDFET. Unique structures that address achieving excellent voltage blocking and on-resistance are emphasized.This useful textbook and reference innovations for achieving superior high frequency operation and highlights manufacturing technology for the devices. The book will benefit professionals, academics, researchers and graduate students in the fields of electrical and electronic engineering, circuits and systems, semiconductors, and energy studies.
Author : Kazuhiro Adachi
Publisher :
ISBN 13 :
Total Pages : 243 pages
Book Rating : 4.:/5 (527 download)
Download or read book Simulation and Modelling of Power Devices Based on 4H Silicon Carbide written by Kazuhiro Adachi and published by . This book was released on 2003 with total page 243 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : B. Jayant Baliga
Publisher : Springer Science & Business Media
ISBN 13 : 1461402697
Total Pages : 580 pages
Book Rating : 4.4/5 (614 download)
Download or read book Advanced High Voltage Power Device Concepts written by B. Jayant Baliga and published by Springer Science & Business Media. This book was released on 2011-09-21 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt: The devices described in “Advanced MOS-Gated Thyristor Concepts” are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor control in electric trains, steel-mills, etc. Advanced concepts that enable improving the performance of power thyristors are discussed here, along with devices with blocking voltage capabilities of 5,000-V, 10,000-V and 15,000-V. Throughout the book, analytical models are generated to allow a simple analysis of the structures and to obtain insight into the underlying physics. The results of two-dimensional simulations are provided to corroborate the analytical models and give greater insight into the device operation.
Author : David C. Sheridan
Publisher :
ISBN 13 :
Total Pages : 34 pages
Book Rating : 4.:/5 (479 download)
Download or read book Design, Fabrication, and Characterization of 4H-Silicon Carbide Rectifiers for Power Switching Applications written by David C. Sheridan and published by . This book was released on 2001 with total page 34 pages. Available in PDF, EPUB and Kindle. Book excerpt:
