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Depth Resolved Cathodoluminescence Study Of Annealed Silicon Implanted Gallium Arsenide
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Book Synopsis Depth-resolved Cathodoluminescence Study of Annealed Silicon Implanted Gallium Arsenide by : Jeffrey Ray Cavins (CAPT, USAF.)
Download or read book Depth-resolved Cathodoluminescence Study of Annealed Silicon Implanted Gallium Arsenide written by Jeffrey Ray Cavins (CAPT, USAF.) and published by . This book was released on 1982 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Depth-Resolved Cathodoluminescence Study of Annealed Silicon Implanted Gallium Arsenide by : Jeffrey Ray Cavins
Download or read book Depth-Resolved Cathodoluminescence Study of Annealed Silicon Implanted Gallium Arsenide written by Jeffrey Ray Cavins and published by . This book was released on 1982 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt: Depth-resolved cathodoluminescence was performed on Si ion implanted GaAs. The samples were Cr doped semi-insulating GaAs crystals grown using the horizontal Bridgman method. Nine samples were prepared for this study, four were implanted with 100 keV Si ions at a fluence of 10 to the 13th power/sq. cm, and five were left unimplanted. One each of the implanted and unimplanted samples were annealed at 800 C for 10 minutes, 800 C for 10 seconds, 900 C for 10 minutes, or 900 C for 10 seconds, for a total of eight samples. The ninth sample was left unannealed and unimplanted as a control. Cathodoluminescence data was taken using 1000 V electrons as an excitation source. Depth resolution was achieved by taking spectral data and successively chemically etching the surface of the crystal in 250 A steps. No new peaks were observed in the GaAs during the experiment. The 800 C/10 minute anneal proved to have the greatest effect in optically activating the impurities in the unimplanted samples. The 900 C/10 minute anneals exhibited spectra associated with vacancy complexes.
Book Synopsis Depth-Resolved Cathodoluminescence on the Effects of Cd Implantation and Annealing in Gallium Arsenide by : Joseph D. Dumoulin
Download or read book Depth-Resolved Cathodoluminescence on the Effects of Cd Implantation and Annealing in Gallium Arsenide written by Joseph D. Dumoulin and published by . This book was released on 1976 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ten samples of GaAs were examined by depth-resolved cathodoluminescence at temperatures of 10 K and 80 K. Electron beam energies from 1.0KV to 25KV were used. Both cold and hot, 135KV, Cd-implanted GaAs samples with Si3N4 caps were studied. A sample of the n-type GaAs substrate was used as a control. Spectra were obtaining showing the ion implantation damage layers. The unannealed samples damage layer boundaries were calculated at 0.01 micrometers, 0.24 micrometers, 0.37 micrometers, and 0.61 micrometers for fluences of 10 to the 12th power ion/sq cm, 10 to the 14th power ion/sqcm, 10 to the 15th power ion/sqcm, and 10 to the 16th power ion/sqcm respectively. For fluences> or = 10 to the 14th power ion/sq cm and 800 C, 15 minute anneal in flowing argon gas was not sufficient to completely remove the damage layer. An emission peak at 1.488eV changed in energy by only 0.001 eV between 10 K and 80 K, and was assigned to a donor-Cd acceptor recombination. A peak approximately 0.010eV above the band gap energy was observed in many of the implanted samples. Peaks at 1.4eV, 1.41eV, 1.39eV, and 1.35eV increased in intensity upon annealing and were assigned to vacancies, which were enhanced during annealing. The major conclusion reached was that depth-resolved cathodoluminescence was an excellent non-destructive method of sharply defining damage layers produced by ion implantation. (Author).
Book Synopsis Cathodoluminescence and Photoluminescence Study of Silicon Implanted Gallium Arsenide by : Daniel L. DeForest
Download or read book Cathodoluminescence and Photoluminescence Study of Silicon Implanted Gallium Arsenide written by Daniel L. DeForest and published by . This book was released on 1982 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt: Depth resolved photoluminescence and cathodoluminescence data were obtained from gallium arsenide implanted with 120 keV silicon ions. The luminescence data were studied as a function of depth in an effort to determine the implant damage profile of the silicon in GaAs. A chemical etchant was used to etch off successive layers of the crystal surface. The substrate material used for this study was bulk GaAs, grown by the Liquid-Encapsulated Czochralski (LEC) method. (Author).
Book Synopsis Depth-resolved Cathodoluminescence on the Effects of Cd Implantation and Annealing in Gallium Arsenide by : Joseph Danny Dumoulin (MAJ, USAF.)
Download or read book Depth-resolved Cathodoluminescence on the Effects of Cd Implantation and Annealing in Gallium Arsenide written by Joseph Danny Dumoulin (MAJ, USAF.) and published by . This book was released on 1976 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Depth Resolved Cathodoluminescence of Cadmium Implanted Gallium Arsenide by : Dan L Boulet (Jr)
Download or read book Depth Resolved Cathodoluminescence of Cadmium Implanted Gallium Arsenide written by Dan L Boulet (Jr) and published by . This book was released on 1975 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt: Three samples of GaAs were examined by depth resolved cathodoluminescence using electron beam energies from 5 KV to 25 KV at 10K and 80K. Samples 1 and 2 had been Cd implanted at 135 KV and annealed at 800C for 10 minutes; they received doses of 10 to the 15th power ion/sq cm and 10 to the 14th power ion/sq cm respectively. Sample 3 was n-type epitaxial and had not been intentionally doped. In the Cd implanted samples, the peak normally located near 1.488 eV at 10K (1.481 eV at 80K) was observed to shift to lower energy as the beam energy was reduced. This shift was interpreted as being caused by a depth dependent Cd concentration which was higher near the surface. Peak shifts as were observed in Samples 1 and 2 did not occur in the depth resolved spectra of Sample 3. From this study, it was concluded that using depth resolved cathodoluminescence spectra, energy shifts of peaks resulting from simple center recombinations can, under certain conditions, be used to estimate the extent of an implanted impurity concentration.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1984 with total page 1278 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Depth-resolved Cathodoluminescence of Carbon Implanted Gallium Arsenide by : Martin J. Walter (2LT, USAF.)
Download or read book Depth-resolved Cathodoluminescence of Carbon Implanted Gallium Arsenide written by Martin J. Walter (2LT, USAF.) and published by . This book was released on 1977 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Depth-resolved Cathodoluminescence of Carbon Implanted Gallium Arsenide by : Luciano V. Parzianello (CAPT, USAF.)
Download or read book Depth-resolved Cathodoluminescence of Carbon Implanted Gallium Arsenide written by Luciano V. Parzianello (CAPT, USAF.) and published by . This book was released on 1978 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Depth-Resolved Luminescence of Gallium Arsenide Using Ion Etching by : Myron Travis Maclin
Download or read book Depth-Resolved Luminescence of Gallium Arsenide Using Ion Etching written by Myron Travis Maclin and published by . This book was released on 1981 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt: A system was assembled for obtaining depth-resolved, low-temperature luminescence data from GaAs using ion etching. This system was tested on virgin and silicon implanted, liquid-encapsulated Czochralski (LEC) grown GaAs. It was found to be effective in detecting lattice damage in annealed and unannealed Si-implanted GaAs.
Book Synopsis Depth-Resolved Cathodoluminescence of Carbon Implanted Gallium Arsenide by : Luciano V. Parzianello
Download or read book Depth-Resolved Cathodoluminescence of Carbon Implanted Gallium Arsenide written by Luciano V. Parzianello and published by . This book was released on 1977 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt: The effects of two caps, SiO2 and Si3N, are examined on Cr doped GaAs by means of depth resolved Cathodoluminescence. The GaAs samples had been implanted with C in fluences of 10 to the -13th power/sq cm and 10 to the -14th power/sq cm. Two of the samples differed only in the cap used. The energy shift in the carbon-carbon, donor-acceptor, recombination, and the free-bound, carbon acceptor transition peak are used to evaluate the carbon donor, and carbon acceptor concentrations. These concentrations are used to evaluate the effects of the caps. It is found that the carbon substitutes for both Ga and As; and that the Si3N4 cap permits greater outdiffusion of As than the SiO2 cap; and that the SiO2 cap permits greater outdiffusion of the Ga than does the Si3N4 cap. (Author).
Book Synopsis Cathodoluminescence and Photoluminescence Study of Silicon Implanted Gallium Arsenide by : Daniel Lee DeForest (2LT, USAF.)
Download or read book Cathodoluminescence and Photoluminescence Study of Silicon Implanted Gallium Arsenide written by Daniel Lee DeForest (2LT, USAF.) and published by . This book was released on 1982 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Photoluminescence Study of Ion Implantation Damage in Gallium Arsenide by : Manuel V. Key
Download or read book Photoluminescence Study of Ion Implantation Damage in Gallium Arsenide written by Manuel V. Key and published by . This book was released on 1981 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 5 deg photoluminescence (PL) from 1.55 eV to 1.36 eV of semi-insulating bulk GaAs implanted with Si was observed, using the 488 nm line of an argon-ion laser. Implant dosages were 10 to the 12th power, 10 to the 13th power, 10 to the 14th power, and 10 to the 15th power ions/sq cm. Separate sets of samples were annealed at 750 deg C and 900 deg C. The virgin unannealed sample spectrum contained a shallow donor peak at 1.513 eV, a carbon donor-to-carbon acceptor peak at 1.490 eV, a possible carbon donor-to-zinc acceptor peak at 1.487 eV, and an optical phonon peak at 1.454 eV. The virgin annealed sample spectra included, additionally, a vacancy complex-to-silicon acceptor peak at 1.406 eV, a Ga vacancy complex peak at 1.358 eV and a phonon replica at 1.322 eV. The spectra of the implanted unannealed samples showed an increasing quenching of native peaks with increasing dosage, and included no new damage related peaks. The spectra of the implanted samples showed an increase in the native peaks due to annealing but not due to Si dosage increases. The increase in Si dosage caused an increase in low energy broad peaks. A temperature study (5 deg K to 77 deg K), and chemical etching depth resolved study of a sample implanated with 10 to the 15th power ions sq cm and annealed at 900 deg C showed two broads peaks: one near 1.38 eV and one near 1.42 eV. (Author).
Book Synopsis Radiation Damage and Annealing Effects Studies of Silicon-Implanted Gallium Arsenide by : Samuel C. Ling
Download or read book Radiation Damage and Annealing Effects Studies of Silicon-Implanted Gallium Arsenide written by Samuel C. Ling and published by . This book was released on 1982 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt: Radiation damage and low temperature (200 degrees-600 degrees C) annealing behavior of 120 keV silicon and selenium ion implants into gallium arsenide have been investigated by Rutherford Backscattering-Channeling and Transmission Electron Microscopy techniques. Lattice location studies of Si implants after high temperature annealing (850 degrees and 950 degrees C) have been conducted using Proton Induced X-Ray Emission method. (Author).
Book Synopsis An Experimental Study of Capless Annealing of Ion Implanted Gallium-arsenide by : Gary Lynn Harris
Download or read book An Experimental Study of Capless Annealing of Ion Implanted Gallium-arsenide written by Gary Lynn Harris and published by . This book was released on 1980 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Cathodoluminescence on the Effects of Te Implantation and Laser Annealing in Gallium Arsenide by : Ronald L. Lusk
Download or read book Cathodoluminescence on the Effects of Te Implantation and Laser Annealing in Gallium Arsenide written by Ronald L. Lusk and published by . This book was released on 1978 with total page 65 pages. Available in PDF, EPUB and Kindle. Book excerpt: The United States Air Force uses devices which must operate in high temperature environments where intrinsic (pure) semiconductors do not perform well. With the intentional addition of impurity ions (doping) into the lattice of a crystal, the semiconductor gallium arsenide (GaAs) should have the electrical properties required for operation in the environments mentioned above. Gallium arsenide is an intermetallic compound formed from a group III element (gallium) and a group V element (arsenic). It crystallizes in the zinc blende structure and has physical properties which are similar to those of the covalent group IV semiconductors, germanium and silicon. The electrical properties, such as high electron mobility, have made GaAs very useful in many technical applications. However, the promise that GaAs shows for use in future devices, such as microwave devices, is based upon the ability to provide the necessary impurity concentrations in the 'pure' crystal.
Book Synopsis Masters Theses in the Pure and Applied Sciences Accepted by Colleges and Universities of the United States and Canada by : Wade H. Shafer
Download or read book Masters Theses in the Pure and Applied Sciences Accepted by Colleges and Universities of the United States and Canada written by Wade H. Shafer and published by Springer. This book was released on 1984-02-01 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: This series lists applicable thesis titles published in the United States and Canada. Volume 40 covers thesis year 1995. All back volumes are still available.
