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Defects In Semiconductors 14
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Book Synopsis Extended Defects in Semiconductors by : D. B. Holt
Download or read book Extended Defects in Semiconductors written by D. B. Holt and published by Cambridge University Press. This book was released on 2014-08-07 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covering topics that are especially important in electronic device development, this book surveys the properties, effects, roles and characterization of structurally extended defects in semiconductors. The basic properties of extended defects are outlined, and their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization are discussed. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors
Book Synopsis Proceedings of the 14th International Conference on Defects in Semiconductors by : H. J. von Bardeleben
Download or read book Proceedings of the 14th International Conference on Defects in Semiconductors written by H. J. von Bardeleben and published by . This book was released on 1986 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Point and Extended Defects in Semiconductors by : Giorgio Benedek
Download or read book Point and Extended Defects in Semiconductors written by Giorgio Benedek and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.
Book Synopsis Radiation Damage and Defects in Semiconductors by :
Download or read book Radiation Damage and Defects in Semiconductors written by and published by . This book was released on 1973 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Extended Defects in Semiconductors by : D. B. Holt
Download or read book Extended Defects in Semiconductors written by D. B. Holt and published by Cambridge University Press. This book was released on 2007-04-12 with total page 625 pages. Available in PDF, EPUB and Kindle. Book excerpt: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Download or read book Energy Research Abstracts written by and published by . This book was released on 1990 with total page 840 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon by : Peter Pichler
Download or read book Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Book Synopsis Charged Semiconductor Defects by : Edmund G. Seebauer
Download or read book Charged Semiconductor Defects written by Edmund G. Seebauer and published by Springer Science & Business Media. This book was released on 2008-11-14 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.
Author :Johann-Martin Spaeth Publisher :Springer Science & Business Media ISBN 13 :9783540426950 Total Pages :508 pages Book Rating :4.4/5 (269 download)
Book Synopsis Point Defects in Semiconductors and Insulators by : Johann-Martin Spaeth
Download or read book Point Defects in Semiconductors and Insulators written by Johann-Martin Spaeth and published by Springer Science & Business Media. This book was released on 2003-01-22 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap peared about 10 years ago. Since then a very active development has oc curred both with respect to the experimental methods and the theoretical interpretation of the experimental results. It would therefore not have been sufficient to simply publish a second edition of the precedent book with cor rections and a few additions. Furthermore the application of the multiple magnetic resonance methods has more and more shifted towards materials science and represents one of the important methods of materials analysis. Multiple magnetic resonances are used less now for "fundamental" studies in solid state physics. Therefore a more "pedestrian" access to the meth ods is called for to help the materials scientist to use them or to appreciate results obtained by using these methods. We have kept the two introduc tory chapters on conventional electron paramagnetic resonance (EPR) of the precedent book which are the base for the multiple resonance methods. The chapter on optical detection of EPR (ODEPR) was supplemented by sections on the structural information one can get from "forbidden" transitions as well as on spatial correlations between defects in the so-called "cross relaxation spectroscopy". High-field ODEPR/ENDOR was also added. The chapter on stationary electron nuclear double resonance (ENDOR) was supplemented by the method of stochastic END OR developed a few years ago in Paderborn which is now also commercially available.
Book Synopsis Physical Chemistry of Semiconductor Materials and Processes by :
Download or read book Physical Chemistry of Semiconductor Materials and Processes written by and published by John Wiley & Sons. This book was released on 2015-08-17 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of solid state devices began a little more than a century ago, with the discovery of the electrical conductivity of ionic solids. Today, solid state technologies form the background of the society in which we live. The aim of this book is threefold: to present the background physical chemistry on which the technology of semiconductor devices is based; secondly, to describe specific issues such as the role of defects on the properties of solids, and the crucial influence of surface properties; and ultimately, to look at the physics and chemistry of semiconductor growth processes, both at the bulk and thin-film level, together with some issues relating to the properties of nano-devices. Divided into five chapters, it covers: Thermodynamics of solids, including phases and their properties and structural order Point defects in semiconductors Extended defects in semiconductors and their interactions with point defects and impurities Growth of semiconductor materials Physical chemistry of semiconductor materials processing With applications across all solid state technologies,the book is useful for advanced students and researchers in materials science, physics, chemistry, electrical and electronic engineering. It is also useful for those in the semiconductor industry.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1987 with total page 1390 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Book Synopsis Semiconductors by : Otfried Madelung
Download or read book Semiconductors written by Otfried Madelung and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt: The frequent use of well known critical data handbooks like Beilstein, Gmelin and Landolt Bornstein is impeded by the fact that merely larger libraries - often far away from the scientist's working place - can afford such precious collections. To satisfy an urgent need of many scientists for having at their working place a comprehensive, high quality, but cheap collection of at least the basic data oftheirfield of interest the series "Data in Science and Technology"is started now. This first volume presents the most important data on two groups of semiconductors, the elements of the IVth group of the periodic system and the III-V compounds. All data were compiled from information on about 2500 pages in various volumes of the New Series of Landolt-Bornstein. For each critically chosen data set and each figure the original literature is cited. In addition, tables of content refer to the handbooks the data were drawn from. Thus the presentation of data in this volume is of the same high quality standard as in the original evaluated data collections. We hope to meet the needs of the physical community with the volumes of the series "Data in Science and Technology", forming bridges between the laboratory and additional information sources in the libraries.
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1961 with total page 740 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Defect and Impurity Engineered Semiconductors and Devices by :
Download or read book Defect and Impurity Engineered Semiconductors and Devices written by and published by . This book was released on 1998 with total page 712 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Defect Recognition and Image Processing in Semiconductors 1997 by : J. Doneker
Download or read book Defect Recognition and Image Processing in Semiconductors 1997 written by J. Doneker and published by Routledge. This book was released on 2017-11-22 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.
