Defects in HIgh-k Gate Dielectric Stacks

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 9781402043666
Total Pages : 508 pages
Book Rating : 4.0/5 (436 download)

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Book Synopsis Defects in HIgh-k Gate Dielectric Stacks by : Evgeni Gusev

Download or read book Defects in HIgh-k Gate Dielectric Stacks written by Evgeni Gusev and published by Springer Science & Business Media. This book was released on 2006-01-27 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.

Physics and Technology of High-k Gate Dielectrics I

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Author :
Publisher :
ISBN 13 :
Total Pages : 330 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Physics and Technology of High-k Gate Dielectrics I by : Samares Kar

Download or read book Physics and Technology of High-k Gate Dielectrics I written by Samares Kar and published by . This book was released on 2003 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Physics and Technology of High-k Gate Dielectrics 5

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Author :
Publisher : The Electrochemical Society
ISBN 13 : 1566775701
Total Pages : 676 pages
Book Rating : 4.5/5 (667 download)

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Book Synopsis Physics and Technology of High-k Gate Dielectrics 5 by : Samares Kar

Download or read book Physics and Technology of High-k Gate Dielectrics 5 written by Samares Kar and published by The Electrochemical Society. This book was released on 2007 with total page 676 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.

High k Gate Dielectrics

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Author :
Publisher : CRC Press
ISBN 13 : 1000687244
Total Pages : 500 pages
Book Rating : 4.0/5 (6 download)

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Book Synopsis High k Gate Dielectrics by : Michel Houssa

Download or read book High k Gate Dielectrics written by Michel Houssa and published by CRC Press. This book was released on 2003-12-01 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt: The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be requ

Physics and Technology of High-k Gate Dielectrics 6

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Author :
Publisher : The Electrochemical Society
ISBN 13 : 1566776511
Total Pages : 550 pages
Book Rating : 4.5/5 (667 download)

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Book Synopsis Physics and Technology of High-k Gate Dielectrics 6 by : S. Kar

Download or read book Physics and Technology of High-k Gate Dielectrics 6 written by S. Kar and published by The Electrochemical Society. This book was released on 2008-10 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: The issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, novel and still higher permittivity dielectric materials, CMOS processing with high-K layers, metals for gate electrodes, interface issues, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.

Defects in HIgh-k Gate Dielectric Stacks

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 9781402043659
Total Pages : 516 pages
Book Rating : 4.0/5 (436 download)

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Book Synopsis Defects in HIgh-k Gate Dielectric Stacks by : Evgeni Gusev

Download or read book Defects in HIgh-k Gate Dielectric Stacks written by Evgeni Gusev and published by Springer Science & Business Media. This book was released on 2006-01-27 with total page 516 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.

Physics and Technology of High-k Gate Dielectrics 4

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Author :
Publisher : The Electrochemical Society
ISBN 13 : 1566775035
Total Pages : 565 pages
Book Rating : 4.5/5 (667 download)

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Book Synopsis Physics and Technology of High-k Gate Dielectrics 4 by : Samares Kar

Download or read book Physics and Technology of High-k Gate Dielectrics 4 written by Samares Kar and published by The Electrochemical Society. This book was released on 2006 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.

Defects in Microelectronic Materials and Devices

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Author :
Publisher : CRC Press
ISBN 13 : 1420043773
Total Pages : 772 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Defects in Microelectronic Materials and Devices by : Daniel M. Fleetwood

Download or read book Defects in Microelectronic Materials and Devices written by Daniel M. Fleetwood and published by CRC Press. This book was released on 2008-11-19 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt: Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe

Physics and Technology of High-k Gate Dielectrics II

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Author :
Publisher : The Electrochemical Society
ISBN 13 : 9781566774055
Total Pages : 512 pages
Book Rating : 4.7/5 (74 download)

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Book Synopsis Physics and Technology of High-k Gate Dielectrics II by : Samares Kar

Download or read book Physics and Technology of High-k Gate Dielectrics II written by Samares Kar and published by The Electrochemical Society. This book was released on 2004 with total page 512 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This volume is the proceedings of The Second International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues ... and was held during [the] 204th Meeting [of the Electrochemical Society] ..."--P. v.

High Permittivity Gate Dielectric Materials

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 3642365353
Total Pages : 515 pages
Book Rating : 4.6/5 (423 download)

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Book Synopsis High Permittivity Gate Dielectric Materials by : Samares Kar

Download or read book High Permittivity Gate Dielectric Materials written by Samares Kar and published by Springer Science & Business Media. This book was released on 2013-06-25 with total page 515 pages. Available in PDF, EPUB and Kindle. Book excerpt: "The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects." .

Handbook of Flexible and Stretchable Electronics

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Author :
Publisher : CRC Press
ISBN 13 : 1351623109
Total Pages : 536 pages
Book Rating : 4.3/5 (516 download)

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Book Synopsis Handbook of Flexible and Stretchable Electronics by : Muhammad M. Hussain

Download or read book Handbook of Flexible and Stretchable Electronics written by Muhammad M. Hussain and published by CRC Press. This book was released on 2019-11-11 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt: Flexibility and stretchability of electronics are crucial for next generation electronic devices that involve skin contact sensing and therapeutic actuation. This handbook provides a complete entrée to the field, from solid-state physics to materials chemistry, processing, devices, performance, and reliability testing, and integrated systems development. This work shows how microelectronics, signal processing, and wireless communications in the same circuitry are impacting electronics, healthcare, and energy applications. Key Features: • Covers the fundamentals to device applications, including solid-state and mechanics, chemistry, materials science, characterization techniques, and fabrication; • Offers a comprehensive base of knowledge for moving forward in this field, from foundational research to technology development; • Focuses on processing, characterization, and circuits and systems integration for device applications; • Addresses the basic physical properties and mechanics, as well as the nuts and bolts of reliability and performance analysis; • Discusses various technology applications, from printed electronics to logic and memory devices, sensors, actuators, displays, and energy storage and harvesting. This handbook will serve as the one-stop knowledge base for readership who are interested in flexible and stretchable electronics.

High-k Materials in Multi-Gate FET Devices

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Author :
Publisher : CRC Press
ISBN 13 : 1000438813
Total Pages : 207 pages
Book Rating : 4.0/5 (4 download)

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Book Synopsis High-k Materials in Multi-Gate FET Devices by : Shubham Tayal

Download or read book High-k Materials in Multi-Gate FET Devices written by Shubham Tayal and published by CRC Press. This book was released on 2021-09-17 with total page 207 pages. Available in PDF, EPUB and Kindle. Book excerpt: High-k Materials in Multi-Gate FET Devices focuses on high-k materials for advanced FET devices. It discusses emerging challenges in the engineering and applications and considers issues with associated technologies. It covers the various way of utilizing high-k dielectrics in multi-gate FETs for enhancing their performance at the device as well as circuit level. Provides basic knowledge about FET devices Presents the motivation behind multi-gate FETs, including current and future trends in transistor technologies Discusses fabrication and characterization of high-k materials Contains a comprehensive analysis of the impact of high-k dielectrics utilized in the gate-oxide and the gate-sidewall spacers on the GIDL of emerging multi-gate FET architectures Offers detailed application of high-k materials for advanced FET devices Considers future research directions This book is of value to researchers in materials science, electronics engineering, semiconductor device modeling, IT, and related disciplines studying nanodevices such as FinFET and Tunnel FET and device-circuit codesign issues.

Frontiers in Electronics

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Author :
Publisher : World Scientific
ISBN 13 : 9814383724
Total Pages : 241 pages
Book Rating : 4.8/5 (143 download)

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Book Synopsis Frontiers in Electronics by : Sorin Cristoloveanu

Download or read book Frontiers in Electronics written by Sorin Cristoloveanu and published by World Scientific. This book was released on 2013 with total page 241 pages. Available in PDF, EPUB and Kindle. Book excerpt: Frontiers in Electronics is divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CMOS and MOSHFETs; nanomaterials and nanodevices; and wide band gap technology for high power and UV photonics. This book will be useful for nano-microelectronics scientists, engineers, and visionary research leaders. It is also recommended to graduate students working at the frontiers of the nanoelectronics and microscience.

Dielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing

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Author :
Publisher : The Electrochemical Society
ISBN 13 : 1566777925
Total Pages : 588 pages
Book Rating : 4.5/5 (667 download)

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Book Synopsis Dielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing by : Electrochemical society. Meeting

Download or read book Dielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing written by Electrochemical society. Meeting and published by The Electrochemical Society. This book was released on 2010 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 9

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Author :
Publisher : The Electrochemical Society
ISBN 13 : 1566775523
Total Pages : 863 pages
Book Rating : 4.5/5 (667 download)

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Book Synopsis Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 9 by : Ram Ekwal Sah

Download or read book Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 9 written by Ram Ekwal Sah and published by The Electrochemical Society. This book was released on 2007 with total page 863 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions contains the papers presented in the symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectics held May 6-11, 2007 in Chicago. Papers were presented on deposition, characterization and applications of the dielectrics including high- and low-k dielectrics, as well as interface states, device characterization, reliabiliy and modeling.

Nano-CMOS Gate Dielectric Engineering

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Author :
Publisher : CRC Press
ISBN 13 : 1439849609
Total Pages : 248 pages
Book Rating : 4.4/5 (398 download)

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Book Synopsis Nano-CMOS Gate Dielectric Engineering by : Hei Wong

Download or read book Nano-CMOS Gate Dielectric Engineering written by Hei Wong and published by CRC Press. This book was released on 2017-12-19 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: According to Moore’s Law, not only does the number of transistors in an integrated circuit double every two years, but transistor size also decreases at a predictable rate. At the rate we are going, the downsizing of CMOS transistors will reach the deca-nanometer scale by 2020. Accordingly, the gate dielectric thickness will be shrunk to less than half-nanometer oxide equivalent thickness (EOT) to maintain proper operation of the transistors, leaving high-k materials as the only viable solution for such small-scale EOT. This comprehensive, up-to-date text covering the physics, materials, devices, and fabrication processes for high-k gate dielectric materials, Nano-CMOS Gate Dielectric Engineering systematically describes how the fundamental electronic structures and other material properties of the transition metals and rare earth metals affect the electrical properties of the dielectric films, the dielectric/silicon and the dielectric/metal gate interfaces, and the resulting device properties. Specific topics include the problems and solutions encountered with high-k material thermal stability, defect density, and poor initial interface with silicon substrate. The text also addresses the essence of thin film deposition, etching, and process integration of high-k materials in an actual CMOS process. Fascinating in both content and approach, Nano-CMOS Gate Dielectric Engineering explains all of the necessary physics in a highly readable manner and supplements this with numerous intuitive illustrations and tables. Covering almost every aspect of high-k gate dielectric engineering for nano-CMOS technology, this is a perfect reference book for graduate students needing a better understanding of developing technology as well as researchers and engineers needing to get ahead in microelectronic engineering and materials science.

Nanoscale CMOS

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Author :
Publisher : John Wiley & Sons
ISBN 13 : 1118622472
Total Pages : 518 pages
Book Rating : 4.1/5 (186 download)

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Book Synopsis Nanoscale CMOS by : Francis Balestra

Download or read book Nanoscale CMOS written by Francis Balestra and published by John Wiley & Sons. This book was released on 2013-03-01 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap for Semiconductors (ITRS) have created a forecast of performance improvements that will be delivered in the foreseeable future – in the form of a roadmap that will lead to a substantial enlargement in the number of materials, technologies and device architectures used in CMOS devices. This book addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power scaling. The book also provides information on the most appropriate modeling and simulation methods for electrical properties of advanced MOSFETs, including ballistic transport, gate leakage, atomistic simulation, and compact models for single and multi-gate devices, nanowire and carbon-based FETs. Finally, the book presents an in-depth investigation of the main nanocharacterization techniques that can be used for an accurate determination of transport parameters, interface defects, channel strain as well as RF properties, including capacitance-conductance, improved split C-V, magnetoresistance, charge pumping, low frequency noise, and Raman spectroscopy.